BLF888E [NXP]

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET;
BLF888E
型号: BLF888E
厂家: NXP    NXP
描述:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

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BLF888E; BLF888ES  
UHF power LDMOS transistor  
Rev. 1 — 17 March 2016  
Objective data sheet  
1. Product profile  
1.1 General description  
A 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The  
excellent ruggedness of this device makes it ideal for digital and analog transmitter  
applications.  
Table 1.  
Application information  
RF performance at VDS = 50 V in an asymmetrical Doherty application.  
Test signal  
f
PL(AV)  
(W)  
Gp  
D  
IMDshldr  
(dBc)  
38  
PAR  
(dB)  
8 [1]  
(MHz)  
(dB)  
17  
(%)  
52  
DVB-T (8k OFDM)  
470 to 590  
580 to 690  
650 to 790  
150  
<tbd>  
150  
<tbd>  
15  
<tbd>  
49  
<tbd>  
38  
<tbd>  
8 [1]  
[1] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on  
CCDF.  
1.2 Features and benefits  
Designed for asymmetric Doherty operation  
High efficiency  
Integrated ESD protection  
Excellent ruggedness  
High power gain  
Excellent reliability  
Easy power control  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Broadcast transmitter applications in the UHF band  
Digital broadcasting  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLF888E (SOT539A)  
1
2
3
4
5
drain1 (peak)  
1
3
2
4
1
drain2 (main)  
gate1 (peak)  
gate2 (main)  
source  
5
3
5
4
[1]  
2
sym117  
BLF888ES (SOT539B)  
1
2
3
4
5
drain1 (peak)  
1
3
2
4
1
drain2 (main)  
gate1 (peak)  
gate2 (main)  
source  
5
3
5
4
[1]  
2
sym117  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Type number Package  
Name Description  
Ordering information  
Version  
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A  
earless flanged balanced ceramic package; 4 leads SOT539B  
BLF888E  
-
-
BLF888ES  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS(amp)main  
VDS(amp)peak  
VGS(amp)main  
VGS(amp)peak  
Tstg  
Parameter  
Conditions  
Min Max  
Unit  
V
main amplifier drain-source voltage  
peak amplifier drain-source voltage  
main amplifier gate-source voltage  
peak amplifier gate-source voltage  
storage temperature  
-
-
104  
120  
V
0.5 +11  
6 +11  
V
V
65 +150 C  
[1]  
Tj  
junction temperature  
-
225  
C  
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF  
calculator.  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
2 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
Unit  
[1]  
Rth(j-c)  
thermal resistance from junction to case Tcase = 80 C; PL = 150 W  
<tbd> K/W  
[1] Rth(j-c) is measured under RF conditions.  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
Max Unit  
Main device  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA  
104  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 240 mA 1.4  
1.9  
-
2.4  
2.8  
-
V
VGS = 0 V; VDS = 50 V  
-
-
A  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
38  
IGSS  
gate leakage current  
VGS = 10 V; VDS = 0 V  
-
-
-
280  
-
nA  
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 8.5 A  
120  
m  
Peak device  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.6 mA  
120  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 360 mA 1.4  
1.9  
-
2.4  
2.8  
-
V
VGS = 0 V; VDS = 50 V  
-
-
A  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
57  
IGSS  
gate leakage current  
VGS = 10 V; VDS = 0 V  
-
-
-
280  
-
nA  
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 12.6 A  
90  
m  
Table 7.  
AC characteristics  
Tj = 25 C; per section unless otherwise specified.  
Symbol Parameter  
Main device  
Conditions  
Min Typ  
Max Unit  
Ciss  
Coss  
Crss  
input capacitance  
output capacitance  
VGS = 0 V; VDS = 50 V; f = 1 MHz -  
VGS = 0 V; VDS = 50 V; f = 1 MHz -  
210  
67  
-
-
-
pF  
pF  
pF  
reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz -  
1.35  
Peak device  
Ciss  
Coss  
Crss  
input capacitance  
output capacitance  
VGS = 0 V; VDS = 50 V; f = 1 MHz -  
VGS = 0 V; VDS = 50 V; f = 1 MHz -  
315  
105  
1.5  
-
-
-
pF  
pF  
pF  
reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz -  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
3 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
Table 8.  
RF characteristics  
RF characteristics in Ampleon production test circuit, Tcase = 25 C; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
DVB-T (8k OFDM), class-AB  
VDS  
IDq  
drain-source voltage  
-
-
50  
-
-
V
quiescent drain current  
peak section: VGS = 1.3 V  
below VGS(th) (peak)  
600  
mA  
PL(AV)  
Gp  
average output power  
power gain  
f = 550 MHz  
f = 550 MHz  
f = 550 MHz  
-
150  
-
-
-
W
dB  
%
15.3 17  
D  
drain efficiency  
47  
-
52  
IMDshldr intermodulation distortion shoulder f = 550 MHz  
24 21 dBc  
7.8 dB  
PAR  
peak-to-average ratio  
f = 550 MHz  
-
-
7. Test information  
7.1 Ruggedness in Doherty operation  
The BLF888E and BLF888ES are capable of withstanding a load mismatch corresponding  
to VSWR <tbd> through all phases under the following conditions: VDS = <tbd> V;  
f = <tbd> MHz at rated load power.  
7.2 Test circuit  
95 mm  
95 mm  
R10  
L5  
C22  
L3  
C13  
C24  
C20  
C11  
L1  
R12  
R6  
C3  
C4  
C5 C6  
C1  
80 mm  
R1  
R2  
C2  
R5  
R3  
C26  
C7  
C10  
R4  
C8  
C9  
R7  
L2  
C12  
C14  
L6  
C23  
C21  
L4  
C25  
R11  
amp00021  
Printed-Circuit Board (PCB): Rogers 3006; r = 6.5 F/m; height = 0.635 mm; Cu (top/bottom metalization); thickness copper  
plating = 29.6 m; Rogers 3010: r = 10 F/m; height = 0.254 mm  
See Table 9 for a list of components.  
Fig 1. Component layout for production RF test circuit  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
4 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
Table 9.  
List of components  
For test circuit see Figure 1.  
Component  
C1, C2  
C3  
Description  
Value  
multilayer ceramic chip capacitor 51 pF  
multilayer ceramic chip capacitor 11 pF  
multilayer ceramic chip capacitor 13 pF  
multilayer ceramic chip capacitor 24 pF  
multilayer ceramic chip capacitor 33 pF  
multilayer ceramic chip capacitor 51 pF  
multilayer ceramic chip capacitor 12 pF  
multilayer ceramic chip capacitor 20 pF  
multilayer ceramic chip capacitor 43 pF  
multilayer ceramic chip capacitor 4.7 F  
Remarks  
ATC 100B  
ATC 100B  
ATC 100B  
ATC 100B  
ATC 100B  
ATC 100A  
ATC 100B  
ATC 100B  
ATC 100B  
[1]  
[1]  
[1]  
[1]  
[1]  
[2]  
[1]  
[1]  
[1]  
C4  
C5, C6  
C7  
C8  
C9  
C10  
C11, C12  
C13, C14  
C20, C21  
C22, C23  
C25, C25  
C26  
[1]  
[1]  
electrolytic capacitor  
multilayer ceramic chip capacitor 4.7 F, 100 V  
electrolytic capacitor 470 F, 63 V  
multilayer ceramic chip capacitor 47 pF  
100 pF  
ATC 100B  
ATC 100B  
Coilcraft  
L1, L2  
L3, L4  
inductor  
inductor  
10 nH  
0.5 turn, D = 2 mm,  
d = 1mm  
L5, L6  
inductor  
1 turn, D = 5 mm,  
d = 1mm  
R1  
chip resistor  
chip resistor  
chip resistor  
chip resistor  
chip resistor  
chip resistor  
wire resistor  
shunt resistor  
90   
265   
360   
15   
75   
5   
R2  
R3, R4  
R5  
R6  
R7  
R10, R11  
R12  
1   
0.01   
[1] American Technical Ceramics type 100B or capacitor of same quality  
[2] American Technical Ceramics type 100A or capacitor of same quality  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
5 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
8. Package outline  
Flanged balanced ceramic package; 2 mounting holes; 4 leads  
SOT539A  
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT  
1
1
1
1
2
1
2
11.81  
11.56  
4.7  
4.2  
31.55 31.52  
30.94 30.96  
9.50 9.53  
17.12  
3.48 3.30 2.26  
25.53  
0.18  
0.10  
1.75  
41.28 10.29  
41.02 10.03  
35.56  
1.400  
0.25 0.51 0.25  
0.010 0.020 0.010  
13.72  
mm  
3.05 2.01  
9.30 9.27 1.50 16.10 25.27 2.97  
0.465  
0.455  
0.185  
0.165  
1.242 1.241  
1.218 1.219  
0.374 0.375 0.069 0.674  
0.366 0.365 0.059 0.634 0.995 0.117  
0.137 0.130 0.089  
0.405  
0.007  
0.004  
1.005  
1.625  
inches  
Note  
0.540  
0.120 0.079  
1.615 0.395  
1. millimeter dimensions are derived from the original inch dimensions.  
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
10-02-02  
12-05-02  
SOT539A  
Fig 2. Package outline SOT539A  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
6 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
Earless flanged balanced ceramic package; 4 leads  
SOT539B  
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
U
2
E
H
1
L
3
4
b
w
3
Q
e
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81 0.18 31.55 31.52 9.5  
nom  
9.53  
1.75 17.12 25.53 3.48 2.26 32.39 10.29  
mm  
13.72  
0.54  
0.25 0.25  
0.01 0.01  
min 4.2 11.56 0.10 30.94 30.96 9.3  
9.27  
1.50 16.10 25.27 2.97 2.01 32.13 10.03  
0.069 0.674 1.005 0.137 0.089 1.275 0.405  
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375  
nom  
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365  
inches  
Note  
0.059 0.634 0.995 0.117 0.079 1.265 0.395  
1. millimeter dimensions are derived from the original inch dimensions.  
sot539b_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
12-05-02  
13-05-24  
SOT539B  
Fig 3. Package outline SOT539B  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
7 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
9. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
10. Abbreviations  
Table 10. Abbreviations  
Acronym  
CCDF  
DVB-T  
ESD  
Description  
Complementary Cumulative Distribution Function  
Digital Video Broadcast - Terrestrial  
ElectroStatic Discharge  
LDMOS  
MTF  
Laterally Diffused Metal-Oxide Semiconductor  
Median Time to Failure  
OFDM  
PAR  
Orthogonal Frequency Division Multiplexing  
Peak-to-Average Ratio  
VSWR  
UHF  
Voltage Standing Wave Ratio  
Ultra High Frequency  
11. Revision history  
Table 11. Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BLF888E_BLF888ES v.1  
20160317  
Objective data sheet  
-
-
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
8 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
12.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
9 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
12.4 Licenses  
ICs with DVB-T or DVB-T2 functionality  
Use of this product in any manner that complies with the DVB-T or the  
DVB-T2 standard may require licenses under applicable patents of the  
DVB-T respectively the DVB-T2 patent portfolio, which license is available  
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under  
applicable patents of other parties.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’ warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’ specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’ standard warranty and Ampleon’ product  
specifications.  
12.5 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
13. Contact information  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
BLF888E_BLF888ES  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2016. All rights reserved.  
Objective data sheet  
Rev. 1 — 17 March 2016  
10 of 11  
BLF888E; BLF888ES  
UHF power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
7.1  
7.2  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4  
Ruggedness in Doherty operation . . . . . . . . . . 4  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Handling information. . . . . . . . . . . . . . . . . . . . . 8  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
12.1  
12.2  
12.3  
12.4  
12.5  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 10  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon Netherlands B.V. 2016.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 17 March 2016  
Document identifier: BLF888E_BLF888ES  

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