BLF884PS [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF884PS |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总15页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011
Product data sheet
1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation
f
PL(AV) PL(M) Gp
D IMD3 IMDshldr PAR
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
(dB)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
f1 = 860; f2 = 860.1 150
858 70
-
-
21
21
46 32
33
-
-
DVB-T (8k OFDM)
-
31[1]
8.2 [2]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858 70 20 32
32 [1]
-
-
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF884P (SOT1121A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
3
5
4
5
[1]
2
sym117
BLF884PS (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
2
1
5
3
5
4
[1]
3
4
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BLF884P
flanged LDMOST ceramic package;
2 mounting holes; 4 leads
SOT1121A
BLF884PS
-
earless flanged LDMOST ceramic package;
4 leads
SOT1121B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
104
+11
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
VGS
Tstg
0.5
65
-
V
+150
200
C
C
Tj
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
2 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Rth(j-c)
thermal resistance from junction to case Tcase = 80 C; PL(AV) = 70 W
0.22 K/W
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[1]
[1]
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.2 mA
104 -
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 120 mA
VGS = 0 V; VDS = 50 V
1.4 1.9 2.4
-
-
-
1.4 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
19
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
-
140 nA
[1]
[2]
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 4.25 A
240
-
-
-
-
m
pF
pF
pF
Ciss
Coss
Crss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
-
-
105
34
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
reverse transfer capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
0.7
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 7.
RF characteristics
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
2-Tone, class-AB
Conditions
Min Typ Max Unit
VDS
IDq
drain-source voltage
-
50
-
V
[1]
quiescent drain current
average output power
-
0.65 -
A
PL(AV)
f1 = 860 MHz;
f2 = 860.1 MHz
150
-
-
-
-
W
Gp
power gain
f1 = 860 MHz;
f2 = 860.1 MHz
20
42
-
21
46
dB
%
D
drain efficiency
f1 = 860 MHz;
f2 = 860.1 MHz
IMD3
third-order intermodulation distortion
f1 = 860 MHz;
f2 = 860.1 MHz
32 28 dBc
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
3 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
Table 7.
RF characteristics …continued
RF characteristics in NXP production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
DVB-T (8k OFDM), class-AB
VDS
IDq
drain-source voltage
quiescent drain current
average output power
power gain
-
50
-
V
[1]
-
0.65 -
A
PL(AV)
Gp
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
70
20
30
-
-
-
-
-
W
dB
%
21
33
D
drain efficiency
[2]
[3]
IMDshldr intermodulation distortion shoulder
PAR peak-to-average ratio
31 27 dBc
8.2 dB
-
-
[1] Idq for total device
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
001aao028
200
C
oss
(pF)
150
100
50
0
0
20
40
60
V
(V)
DS
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF884P and BLF884PS are capable of withstanding a load mismatch corresponding
to VSWR of 40 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power.
BLF884P_BLF884PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
4 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
7. Application information
7.1 Broadband RF figures
7.1.1 DVB-T
001aao029
001aao030
24
-10
9.5
PAR
50
G
IMD
(dBc)
η
D
p
(dB)
shldr
G
p
(dB)
(%)
20
-20
-30
-40
-50
8.5
40
PAR
IMD
shldr
16
12
8
7.5
6.5
5.5
30
20
10
η
D
400
500
600
700
800
900
400
500
600
700
800
900
f (MHz)
f (MHz)
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 2. DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
Fig 3. DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
5 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
7.2 Impedance information
drain 1
gate 1
Z
Z
L
i
gate 2
drain 2
001aan207
Fig 4. Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 70 W (DVB-T).
f
Zi
ZL
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
0.984 j3.485
1.009 j2.805
1.038 j2.185
1.071 j1.614
1.107 j1.080
1.147 j0.574
1.193 j0.092
1.243 + j0.373
1.300 + j0.826
1.364 + j1.270
1.436 + j1.708
1.517 + j2.144
1.609 + j2.581
1.714 + j3.022
1.834 + j3.469
1.971 + j3.925
2.129 + j4.394
2.313 + j4.879
2.528 + j5.382
2.781 + j5.907
3.081 + j6.458
3.441 + j7.038
3.875 + j7.648
4.404 + j8.291
5.057 + j8.964
5.870 + j9.659
6.892 + j10.358
8.186 + j11.019
9.829 + j11.566
8.315 + j1.246
8.236 + j1.328
8.153 + j1.406
8.066 + j1.479
7.975 + j1.547
7.880 + j1.610
7.782 + j1.667
7.682 + j1.720
7.579 + j1.767
7.474 + j1.809
7.367 + j1.846
7.258 + j1.877
7.149 + j1.903
7.038 + j1.925
6.927 + j1.941
6.815 + j1.952
6.703 + j1.958
6.591 + j1.960
6.480 + j1.956
6.368 + j1.949
6.258 + j1.937
6.148 + j1.921
6.040 + j1.901
5.932 + j1.877
5.825 + j1.849
5.720 + j1.818
5.616 + j1.783
5.514 + j1.745
5.413 + j1.704
BLF884P_BLF884PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
6 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
8. Test information
Table 9.
List of components
For test circuit, see Figure 5 and Figure 6.
Component
B1, B2
Description
Value
Remarks
semi rigid coax
25 ; 49.5 mm
5.1 pF
UT-090C-25 (EZ 90-25)
[1]
[1]
[1]
[2]
[1]
C1, C2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C3
6.8 pF
C4
8.2 pF
C10, C13, C14
C11, C12
C15, C16
100 pF
10 pF
4.7 F, 50 V
Kemet C1210X475K5RAC-TU or
capacitor of same quality.
[1]
C17, C18, C23,
C24
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 pF
C19, C20
10 F, 50 V
TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22
C30
electrolytic capacitor
470 F; 63 V
13 pF
[3]
[3]
[3]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C31
2.2 pF
C33, C34, C35
C36, C37
100 pF
4.7 F, 50 V
TDK C4532X7R1E475MT020U or
capacitor of same quality.
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
L1
microstrip
-
(W L) 15 mm 13 mm
(W L) 5 mm 26 mm
(W L) 2 mm 49.5 mm
(W L) 1.7 mm 3.5 mm
(W L) 2 mm 9.5 mm
(W L) 5 mm 13 mm
(W L) 2 mm 11 mm
(W L) 2 mm 3 mm
L2
microstrip
-
L3, L32
L4
microstrip
-
microstrip
-
L5
microstrip
-
L30
microstrip
-
L31
microstrip
-
L33
microstrip
-
R1, R2
R3, R4
R5, R6
R7, R8
wire resistor
SMD resistor
wire resistor
potentiometer
10
5.6
100
10 k
0805
[1] American technical ceramics type 800B or capacitor of same quality.
[2] American technical ceramics type 180R or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
7 of 15
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+V
G1
R7
C19
R1
C17
L5
R5
+V
D1
C36
C21
C23
C11
R3
C13
C14
C15
C34
C35
L30
C30
L1
L32
B2
L3
B1
L31
L2
50 Ω
C33
C10
50 Ω
L33
L4
C31
C1 C2 C3
C4
C16
R4
R6
C12
C37
C22
C24
+V
D2
001aao032
C18
R2
C20
R8
+V
G2
See Table 9 for a list of components.
Fig 5. Class-AB common source broadband amplifier
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
48 mm
45.7 mm
+V
+V
D1
G1
C21
+
R1
C17
R5
C23
R7
C36
-
C19
C21
R3
C15
C11
C10
C13
C34
C35
C1
C33
C4
50 Ω
C31 C30
4 mm
50 Ω
C14
C2
C3
C12
C16
R4
C20
-
C37
R6
R8
C24
R2
C18
+
C22
+V
G2
+V
D2
6.3 mm
26 mm
30.5 mm
aaa-001709
See Table 9 for a list of components.
Fig 6. Component layout for class-AB common source amplifier
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
9 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT1121A
D
A
F
D
U
1
B
C
c
1
q
H
1
1
2
p
U
2
E
1
H
E
5
A
w
1
A
B
3
4
b
w
2
C
Q
e
0
5
10 mm
p
scale
Dimensions
(1)
(2)
Unit
A
b
c
D
D
e
E
E
1
F
H
H
1
Q
q
U
1
U
w
1
w
2
1
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 3.38 1.70
34.16 9.91
8.89
27.94
1.1
0.25 0.51
0.01 0.02
min 3.45 3.68 0.10 19.61 19.66
9.27 9.27 0.89 18.92 12.57 3.12 1.45
0.375 0.375 0.045 0.785 0.505 0.133 0.067
33.91 9.65
1.345 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.004 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.123 0.057
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
10-02-02
SOT1121A
Fig 7. Package outline SOT1121A
BLF884P_BLF884PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
10 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
SOT1121B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
U
2
E
1
H
E
3
4
b
Q
w
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
Q
U
1
U
w
w
3
2
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
8.89
0.51 0.25
0.02 0.01
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.003 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1121B
Fig 8. Package outline SOT1121B
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
11 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10. Abbreviations
Acronym
CCDF
DVB
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
DVB-T
LDMOS
LDMOST
OFDM
PAR
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
RF
SMD
Surface Mounted Device
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
20111216 Product data sheet
Change notice
Supersedes
BLF884P_BLF884PS v.2
Modifications:
-
BLF884P_BLF884PS v.1
• Table Table 1. on page 1: Has been updated
• Table Table 7. on page 3: Has been updated
•
Removed section “Reliability”
BLF884P_BLF884PS v.1
20111013 Objective data sheet
-
-
BLF884P_BLF884PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
12 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLF884P_BLF884PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
13 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
13.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF884P_BLF884PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
14 of 15
BLF884P; BLF884PS
NXP Semiconductors
UHF power LDMOS transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
3
4
5
6
6.1
7
Application information. . . . . . . . . . . . . . . . . . . 5
Broadband RF figures . . . . . . . . . . . . . . . . . . . 5
DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 6
7.1
7.1.1
7.2
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
13.5
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 December 2011
Document identifier: BLF884P_BLF884PS
相关型号：
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