BLF6G10LS-200RN,11 [NXP]
BLF6G10LS-200RN;
| 型号： | BLF6G10LS-200RN,11 |
| 厂家： | 
NXP |
| 描述： | BLF6G10LS-200RN 局域网 放大器 CD 晶体管 |
| 文件： | 总11页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G10-200RN;
BLF6G10LS-200RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
ACPR
(dBc)
−39[1]
(MHz)
(dB)
20
(%)
28.5
2-carrier W-CDMA
869 to 894
40
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
Average output power = 40 W
Power gain = 20 dB
Efficiency = 28.5 %
ACPR = −39 dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 700 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pin
BLF6G10-200RN (SOT502A)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
3
[1]
source
2
2
3
sym112
BLF6G10LS-200RN (SOT502B)
1
2
3
drain
gate
1
1
2
3
[1]
source
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G10-200RN
-
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLF6G10LS-200RN
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
49
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
2 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Type
Typ
0.50
0.35
Unit
K/W
K/W
thermal resistance from
junction to case
Tcase = 80 °C;
PL = 40 W
BLF6G10-200RN
BLF6G10LS-200RN
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
VGSq
gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4
2.0
2.2
2.4
2.7
V
V
gate-source quiescent voltage VDS = 28 V;
ID = 1620 mA
1.7
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
4.2
-
μA
VGS = VGS(th) + 3.75 V;
VDS = 10 V
40
48
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 9.45 A
-
-
420
26
nA
S
forward transconductance
11
18
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 9.45 A
0.012 0.07
0.093
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz;
RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
-
Typ
40
Max
Unit
W
PL(AV)
Gp
average output power
-
power gain
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
19
-
20
-
dB
dB
%
IRL
input return loss
−6.4
28.5
−4.5
ηD
drain efficiency
25
-
-
ACPR
adjacent channel power ratio
−39.4 −36
dBc
7.1 Ruggedness in class-AB operation
The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are
capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all
phases under the following conditions: VDS = 28 V; IDq = 1400 mA; PL = 200 W;
f = 894 MHz.
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
3 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aaj415
21
60
G
p
G
(dB)
η
D
(%)
p
19
40
η
D
17
15
20
0
200
(W)
0
40
80
120
160
P
L
VDS = 28 V; IDq = 1400 mA; f = 881 MHz.
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
typical values
7.3 Two-tone CW
001aaj416
001aah520
21
60
−20
IMD
G
p
G
η
D
(%)
p
(dB)
(dBc)
IMD3
−30
19
40
η
D
−40
−50
−60
IMD5
IMD7
17
15
20
0
360
0
120
240
0
60
120
180
P
(W)
P
(W)
L(PEP)
L(PEP)
VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±100 kHz).
VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±100 kHz).
Fig 2. Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
4 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
7.4 2-carrier W-CDMA
001aaj417
001aah522
22
40
−35
IMD3,
ACPR
(dBc)
G
(dB)
η
D
(%)
p
21
30
−40
−45
−50
−55
IMD3
ACPR
20
19
18
20
10
0
G
p
η
D
0
20
40
60
0
20
40
60
P
L(AV)
(W)
P
(W)
L(AV)
VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±5 MHz);
VDS = 28 V; IDq = 1400 mA; f = 881 MHz (±5 MHz);
carrier spacing 10 MHz.
carrier spacing 10 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
Fig 5. 2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
8. Test information
V
GG
V
DD
R3
L1
R1
C3
C7
C8
C11
C13
C17
R2
C5
C6
input
50 Ω
output
50 Ω
C1
C16
C2
C15
C9
C10
C12
C14
C18
001aah523
The drawing is not to scale.
Fig 6. Test circuit for operation at 800 MHz
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
5 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
C7 C8
R1
R3
C11 C13
C3
Q1
L1
C17
R2
C5
C6
C16
C15
C1
C2
C18
C12
C14
C9 C10
NXP
IN
NXP
OUT
800 -1000 MHz
V1.0
800 -1000 MHz
V1.0
001aah524
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 8 for list of components.
The drawing is not to scale.
Fig 7. Component layout
Table 8.
List of components
See Figure 6 and Figure 7.
Component Description
Value
Remarks
[1]
[1]
[1]
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor 68 pF
solder vertically
solder vertically
solder vertically
Vishay VJ1206Y224KXB
C2
multilayer ceramic chip capacitor 13 pF
multilayer ceramic chip capacitor 10 pF
C5, C6
C7, C8, C9, C10
C13, C14
C15
electrolytic capacitor
220 nF
[2]
[1]
multilayer ceramic chip capacitor 4.7 μF; 50 V
multilayer ceramic chip capacitor 1.5 pF
solder vertically
C17, C18
L1
electrolytic capacitor
ferrite SMD bead
BLF6G10LS-200RN
SMD resistor
220 μF; 63 V
-
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
Q1
-
R1, R2, R3
9.1 Ω; 0.1 W
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
6 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 8. Package outline SOT502A
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
7 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 9. Package outline SOT502B
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
8 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Description
Acronym
3GPP
CCDF
CDMA
CW
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
DPCH
EDGE
GSM
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
LDMOS
LDMOST
PAR
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status Change notice Supersedes
BLF6G10-200RN_10LS-200RN_2 20100121
Modifications
Product data sheet -
BLF6G10-200RN_10LS-200RN_1
• Section 1.1 “General description” lower frequency range changed to 700 MHz.
• Section 1.2 “Features” lower frequency range changed to 700 MHz.
• Section 1.3 “Applications” lower frequency range changed to 700 MHz.
• Section 12 “Legal information” export control disclaimer added.
BLF6G10-200RN_10LS-200RN_1 20090119
Product data sheet -
-
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
9 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G10-200RN_10LS-200RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
10 of 11
BLF6G10(LS)-200RN
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
7.1
7.2
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 January 2010
Document identifier: BLF6G10-200RN_10LS-200RN_2
相关型号：
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