BLF6G13LS-250P,112 [NXP]
BLF6G13LS-250P;
| 型号： | BLF6G13LS-250P,112 |
| 厂家： | 
NXP |
| 描述： | BLF6G13LS-250P CD 晶体管 |
| 文件： | 总14页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G13L-250P;
BLF6G13LS-250P
Power LDMOS transistor
Rev. 3 — 14 October 2011
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1.
Test information
Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation
f
VDS
(V)
50
PL(1dB)
(W)
Gp
D
(GHz)
(dB)
17
(%)
56
CW
1.3
250
1.2 Features and benefits
Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an IDq of
100 mA:
Output power = 250 W
Power gain = 17 dB
Efficiency = 56 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF6G13L-250P (SOT1121A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
3
5
4
5
[1]
2
sym117
BLF6G13LS-250P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
2
1
5
3
5
4
[1]
3
4
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G13L-250P
BLF6G13LS-250P
-
flanged LDMOST ceramic package; 2 mounting
holes; 4 leads
SOT1121A
-
earless flanged LDMOST ceramic package; 4 leads
SOT1121B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
100
Unit
V
drain-source voltage
gate-source voltage
drain current
-
0.5 +13
V
-
42
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
200 C
-
BLF6G13L-250P_6G13LS-250P
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
2 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case Tcase = 85 C; PL = 250 W
0.26 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
-
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.4 mA
100
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 235 mA 1.4
1.8
-
2.4
VGS = 0 V; VDS = 50 V
-
-
1.4 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
21
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
-
240 nA
forward transconductance
VDS = 10 V; ID = 120 mA
1
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 4.75 A
200
m
Table 7.
RF characteristics
Mode of operation: CW; f = 1.3 GHz; RF performance at VDS = 50 V; IDq = 100 mA; Tcase = 25 C;
unless otherwise specified, in a class-AB production test circuit.
Symbol
PL
Parameter
Conditions
Min Typ Max Unit
output power
250
-
-
-
W
V
VDS
Gp
drain-source voltage
power gain
PL = 250 W
PL = 250 W
PL = 250 W
PL = 250 W
-
50
-
15
-
17
dB
RLin
D
input return loss
drain efficiency
30 20 dB
56
52
-
%
6.1 Ruggedness in class-AB operation
The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 100 mA; PL = 250 W; f = 1.3 GHz.
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
3 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
7. Application information
7.1 CW
001aan868
19
60
G
p
G
η
D
(%)
p
(dB)
16
45
η
D
13
10
30
15
0
50
100
150
200
250
300
(W)
350
P
L
VDS = 50 V; IDq = 100 mA.
Fig 1. Power gain and drain efficiency as function of load power; typical values
7.2 2-Carrier CW
001aan869
19
60
G
p
G
η
D
(%)
p
(dB)
16
45
η
D
13
10
30
15
0
100
200
300
P
(W)
L
VDS = 50 V; IDq = 100 mA; carrier spacing = 100 kHz.
Fig 2. Power gain and drain efficiency as function of load power; typical values
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
4 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
001aan870
001aan871
21
-10
IMD3
(dBc)
-20
G
p
(dB)
18
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
-30
-40
-50
-60
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
15
12
0
50
100
150
200
250
(W)
0
50
100
150
200
250
P (W)
L
P
L
VDS = 50 V; f = 1300 MHz; carrier spacing = 100 kHz.
Dq = 100 mA
VDS = 50 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 100 mA
(1)
I
(2) IDq = 300 mA
(3) IDq = 500 mA
(2) IDq = 300 mA
(3) IDq = 500 mA
(4)
I
Dq = 700 mA
(4) IDq = 700 mA
(5) IDq = 900 mA
(6) IDq = 1100 mA
(5) IDq = 900 mA
(6) IDq = 1100 mA
(7)
I
Dq = 1300 mA
(7) IDq = 1300 mA
(8) IDq = 1500 mA
(8) IDq = 1500 mA
Fig 3. Power gain as a function of load power;
typical values
Fig 4. Third order intermodulation distortion as a
function of load power; typical values
7.3 Impedance information
Table 8.
Typical impedance
Typical values valid per section unless otherwise specified.
f
ZS
ZL optimized for Gp
ZL optimized for D
MHz
1200
1300
1400
3.03 j8.15
4.06 j9.52
7.00 j9.61
2.03 j0.25
1.67 j0.92
1.50 j1.48
1.46 j0.47
1.19 j0.95
1.22 j1.49
drain 1
gate 1
Z
Z
L
S
gate 2
drain 2
001aak544
Fig 5. Definition of transistor impedance
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
5 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
7.4 Circuit information
Table 9.
List of components
For application circuit see Figure 6.
Component
C1, C2
C3, C4
C5
Description
Value
1.9 pF
4.7 pF
10 pF
56 pF
Remarks
[1]
[1]
[1]
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C6, C7, C8, C9, C10, multilayer ceramic chip capacitor
C11, C38, C39
[2]
[2]
C12, C13
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
100 pF
1 nF
C14, C15, C32, C34
C16, C17
10 F; 50 V
3.0 pF
2.4 pF
2.7 pF
0.8 pF
0.6 pF
100 pF
220 X5R
[1]
[1]
[1]
[1]
[1]
[1]
C20, C21, C22, C23
C40, C41
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
C42, C43, C44, C45
C24
C25
C26, C27, c28, C29,
C30, C31, C33, C35
[3]
C36, C37
C46, C47
R1, R2
SR1
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor 0603
COAX
20 nF
100 F; 63 V
5.1
UT-141C-25-TP
UT-141C-35-TP
25
SR2
COAX
35
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 200B or capacitor of same quality.
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
6 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
C39
C46
C37
C14
C12
C40
C20
C44
C22
C34 C35
C42
C21
SR2
C17
C31
C30
C29
C28
C27
C26
C11
C4
C5
C10
R1
R2
C24
C23
C6
C7
C25
C2
C1
C8
C9
C3
C32
C41
C16
C43
C45
SR1
C33
C36
C13
C15
C47
C38
6.600
mm
4.200
mm
2.700
mm
4.300
mm
2.800
mm
1.500
mm
001aan872
Printed-Circuit Board (PCB): Duroid 4350B; r = 3.48; thickness = 0.762 mm;
thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 6. Component layout for application circuit
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
7 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
8. Test information
8.1 Reliability
001aao402
5
4
3
2
10
Years
(1)
(2)
(3)
(4)
(5)
10
10
10
10
1
0
2
4
6
8
10
12
I
(A)
DS(DC)
MTTF (Years)
The reliability at pulsed conditions can be calculated as follows: MTTF x 1 / .
(1) Tj = 130 C
(2) Tj = 140 C
(3) Tj = 150 C
(4) Tj = 160 C
(5) Tj = 170 C
Fig 7. Electromigration (IDS(DC), total device)
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
8 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT1121A
D
A
F
D
U
1
B
C
1
q
H
1
c
1
2
p
U
2
E
1
H
E
5
A
w
1
A
B
3
4
b
w
2
C
Q
e
0
5
10 mm
p
scale
Dimensions
(1)
(2)
Unit
A
b
c
D
D
e
E
E
1
F
H
H
1
Q
q
U
1
U
w
1
w
2
1
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 3.38 1.70
34.16 9.91
8.89
27.94
1.1
0.25 0.51
0.01 0.02
min 3.45 3.68 0.10 19.61 19.66
9.27 9.27 0.89 18.92 12.57 3.12 1.45
0.375 0.375 0.045 0.785 0.505 0.133 0.067
33.91 9.65
1.345 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.004 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.123 0.057
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
10-02-02
SOT1121A
Fig 8. Package outline SOT1121A
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
9 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
SOT1121B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
U
2
E
1
H
E
3
4
b
Q
w
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
Q
U
1
U
w
w
3
2
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
8.89
0.51 0.25
0.02 0.01
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.003 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1121B
Fig 9. Package outline SOT1121B
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
10 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10. Abbreviations
Acronym
CW
Description
Continuous Wave
LDMOS
LDMOST
MTTF
RF
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Mean Time To Failure
Radio Frequency
SMD
Surface Mount Device
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
20111014 Product data sheet
Change notice
Supersedes
BLF6G13L-250P_6G13LS-250P v.3
-
BLF6G13L-250P_
6G13LS-250P v.2
Modifications:
• Table 6 on page 3: Several values have been updated
• Table 7 on page 3: The minimum value for D has been updated
• Section 8.1 on page 8: This section has been added
BLF6G13L-250P_6G13LS-250P v.2
BLF6G13L-250P_6G13LS-250P v.1
20110321
Objective data sheet
-
BLF6G13L-250P_
6G13LS-250P v.1
20101102
Objective data sheet
-
-
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
11 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
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BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
12 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G13L-250P_6G13LS-250P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 14 October 2011
13 of 14
BLF6G13L-250P; BLF6G13LS-250P
NXP Semiconductors
Power LDMOS transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
3
4
5
6
6.1
7
Application information. . . . . . . . . . . . . . . . . . . 4
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-Carrier CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Impedance information. . . . . . . . . . . . . . . . . . . 5
Circuit information. . . . . . . . . . . . . . . . . . . . . . . 6
7.1
7.2
7.3
7.4
8
8.1
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 October 2011
Document identifier: BLF6G13L-250P_6G13LS-250P
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