BLF6G10LS-200/T3 [NXP]
BLF6G10LS-200/T3;
| 型号： | BLF6G10LS-200/T3 |
| 厂家： | 
NXP |
| 描述： | BLF6G10LS-200/T3 |
| 文件： | 总11页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G10LS-200
Power LDMOS transistor
Rev. 01 — 18 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
ACPR
(dBc)
−41[1]
(MHz)
(dB)
20
(%)
27
2-carrier W-CDMA
869 to 894
40
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = −41 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multicarrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
1
3
2
2
gate
[1]
3
source
2
sym112
[1] Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
SOT502B
BLF6G10LS-200 -
earless flanged LDMOST ceramic package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
49
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tcase = 80 °C; PL = 40 W
Typ Unit
Rth(j-case) thermal resistance from junction to case
0.34 K/W
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
2 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
VGSq
gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4
1.9
2.2
2.4
2.7
V
V
gate-source quiescent voltage VDS = 28 V;
ID = 1620 mA
1.7
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
DS = 10 V
-
-
5
-
µA
40
45
A
V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 9.45 A
-
-
-
-
450
nA
S
forward transconductance
19
0.06
-
-
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 9.45 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3.7
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz;
RF performance at VDS = 28 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
40
Max
-
Unit
W
PL(AV)
Gp
average output power
-
power gain
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
18.5
20.2
−6.4
27
21.5
−4.5
-
dB
dB
%
RLin
ηD
input return loss
-
drain efficiency
24
-
ACPR
adjacent channel power ratio
−41
−37
dBc
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 7 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1400 mA; PL = 200 W; f = 894 MHz.
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
3 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aah526
70
22
p
G
η
D
(dB)
21
(%)
60
G
p
20
19
18
17
16
15
50
40
30
20
10
0
η
D
0
40
80
120
160
200
P
240
(W)
L
VDS = 28 V; IDq = 1400 mA; f = 894 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
001aah534
22
60
G
η
D
p
(dB)
(%)
G
p
20
40
η
D
18
16
20
0
350
(W)
0
50
100
150
200
250
300
L(PEP)
P
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz; f2 = 894.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load
power; typical values
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
4 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
001aah535
IMD3
001aah536
0
0
IMD
IMD3
(dBc)
(dBc)
−20
−40
−60
−80
−20
IMD5
IMD7
−40
−60
−80
(5)
(4)
(1)
(3)
(2)
0
50
100
150
200
250
300
L(PEP)
350
(W)
0
50
100
150
200
250
300
350
(W)
P
P
L(PEP)
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz;
f2 = 894.05 MHz.
VDS = 28 V; f1 = 893.95 MHz; f2 = 894.05 MHz.
(1) 1300 MHz
(2) 1350 MHz
(3) 1400 MHz
(4) 1450 MHz
(5) 1500 MHz
Fig 3. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
7.4 2-carrier W-CDMA
001aah537
001aah538
22
50
0
G
(dB)
η
D
(%)
p
ACPR
(dBc)
21
40
−20
−40
−60
−80
G
p
20
19
18
17
30
20
10
0
η
D
0
20
40
60
0
10
20
30
40
50
60
L(AV)
70
(W)
P
(W)
P
L(AV)
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz;
f2 = 891.5 MHz; carrier spacing 5 MHz.
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz;
f2 = 891.5 MHz; carrier spacing 5 MHz.
Fig 5. 2-carrier W-CDMA power gain and drain
Fig 6. 2-carrier W-CDMA adjacent channel power ratio
as function of average load power; typical
values
efficiency as functions of average load power;
typical values
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
5 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
8. Test information
V
V
GG
DD
R3
C1
C6
C7
C3
C10
R1
L1
R2
C13
input
output
50 Ω
50 Ω
C2
C5
C14
C15
C20
C8
C9
C4
C11
C12
001aah539
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm.
See Table 8 for list of components.
Fig 7. Test circuit for operation at 800 MHz
C6 C7
R2
R3
C3
C10
C1
Q3
L1
C13
R1
C18
C5
C19
C2
C14 C15
C20
C12
C4
C11
C8 C9
NXP
IN
NXP
OUT
800 -1000 MHz
V1.0
800 -1000 MHz
V1.0
001aah540
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm.
See Table 8 for list of components.
Fig 8. Component layout
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
6 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
Table 8.
List of components (see Figure 7 and Figure 8)
All capacitors should be soldered vertically except C20.
Component
Description
Value
Remarks
[1]
[2]
[2]
C1, C2, C3, C4, C5 multilayer ceramic chip capacitor
68 pF
C6, C7, C8, C9
C10, C11
C12, C13
C14
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Electrolytic capacitor
330 nF
4.7 µF
220 µF; 63 V
4.7 pF; 50 V
9.1 pF
[1]
[1]
[1]
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Ferrite SMD bead
C15
C18, C19
C20
10 pF
1.5 pF; 20 V
-
L1
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
Q1
BLC6G10LS-160
-
R1, R2, R3
SMD resistor
9.1 Ω; 0.1 W
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] TDK or capacitor of same quality.
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
7 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 9. Package outline SOT502B
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
8 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Description
Third Generation Partnership Project
Acronym
3GPP
CCDF
CDMA
CW
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
DPCH
EDGE
GSM
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
LDMOS
LDMOST
PAR
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G10LS-200_1
20080118
Preliminary data sheet
-
-
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
9 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BLF6G10LS-200_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
10 of 11
BLF6G10LS-200
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
7.1
7.2
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 January 2008
Document identifier: BLF6G10LS-200_1
相关型号：
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