BLC573 [NXP]
HF / VHF power LDMOS transistor; 高频/甚高频功率LDMOS晶体管
| 型号： | BLC573 |
| 厂家： | 
NXP |
| 描述： | HF / VHF power LDMOS transistor |
| 文件： | 总14页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLC573
HF / VHF power LDMOS transistor
Rev. 01 — 11 December 2008
Preliminary data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1.
Production test information
Mode of operation
f
VDS
(V)
50
PL
Gp
ηD
(MHz)
225
(W)
300
(dB)
26.5
(%)
70
CW
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 900 mA:
N Average output power = 300 W
N Power gain = 26.5 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (HF and VHF band)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
1
3
2
2
gate
[1]
3
source
2
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC573
-
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
drain current
-
110
−0.5 +11
V
-
42
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
Conditions
Typ
Unit
K/W
[1]
thermal resistance from
junction to case
Tcase = 80 °C; PL = 300 W
0.21
[1] Rth(j-c) is measured under RF conditions.
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
2 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA
110
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 375 mA 1.25 1.7
2.25
V
VDS = 50 V; ID = 900 mA 1.45 1.95 2.45
V
VGS = 0 V; VDS = 50 V
-
-
4.2
-
µA
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
44
56
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
-
420
nA
S
forward transconductance
VDS = 10 V; ID = 18.75 A
20
0.09
-
-
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 12.49 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
-
-
2.3
-
-
-
pF
pF
pF
Ciss
Coss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
300
103
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
Table 7.
RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 °C;
unless otherwise specified; in a class-AB production test circuit
Symbol Parameter
Conditions
PL = 300 W
PL = 300 W
PL = 300 W
Min
25
Typ
Max Unit
Gp
power gain
26.5 28
dB
dB
%
RLin
ηD
input return loss
drain efficiency
10
13
70
-
-
67
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
3 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj155
800
C
oss
(pF)
600
400
200
0
0
10
20
30
40
V
50
(V)
DS
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
6.1 Ruggedness in class-AB operation
The BLC573 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W;
f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Measured ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
225
Ω
Ω
0.7 + j2.0
1.95 + j2.0
drain
Z
L
gate
Z
S
001aaf059
Fig 2. Definition of transistor impedance
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
4 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
7.2 Reliability
001aaj156
5
4
3
2
10
Years
(1) (2) (3) (4) (5) (6)
10
10
10
10
1
(7) (8) (9) (10) (11)
0
4
8
12
16
20
I
(A)
dc
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3. BLC573 electromigration (ID, total device)
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
5 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aaj157
001aaj158
30
80
30
G
η
G
p
p
D
(dB)
(%)
(dB)
η
D
(7)
(6)
(5)
28
60
28
G
p
26
24
22
40
20
0
26
24
22
(1)
(2)
(3)
(4)
0
100
200
300
400
0
100
200
300
400
P
(W)
P (W)
L
L
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
Fig 4. Power gain and drain efficiency as functions of
load power; typical values
Fig 5. Power gain as function of load power; typical
values
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
6 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj159
60
P
L
(dBm)
ideal P
L
58
(2)
56
54
52
50
(1)
P
L
24
26
28
30
32
34
P (dBm)
i
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
(1) PL(1dB) = 55.2 dBm (331 W)
(2) PL(3dB) = 55.8 dBm (380 W)
Fig 6. Load power as function of input power; typical values
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
7 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
8.1.2 2-Tone CW
001aaj160
001aaj161
30
80
0
G
(dB)
η
(%)
IMD3
(dBc)
p
D
η
D
28
60
−20
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
26
24
22
40
20
0
−40
−60
−80
G
p
0
100
200
300
400
500
(W)
0
100
200
300
400
L(PEP)
500
(W)
P
P
L(PEP)
VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
(8) IDq = 1800 mA
Fig 7. Power gain and drain efficiency as functions of
peak envelope load power; typical values
Fig 8. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
8.2 Test circuit
Table 9.
List of components
For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper
plating = 35 mm.
Component
Description
Value
Remarks
B1
ferrite SMD bead
100 Ω; 100 MHz
Ferroxcube BDS3/3/8.9-4S2 or equivalent
[1]
[1]
[1]
[1]
C1
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 39 pF
multilayer ceramic chip capacitor 180 pF
multilayer ceramic chip capacitor 220 pF
multilayer ceramic chip capacitor 4.7 µF
C2
C3, C4
C5, C6, C7
C8
TDK C4532X7R1E475MT020U or equivalent
[1]
[1]
C9, C10, C20 multilayer ceramic chip capacitor 1 nF
C11
C12
multilayer ceramic chip capacitor 30 pF
electrolytic capacitor 220 µF; 63 V
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
8 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
Table 9.
List of components …continued
For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper
plating = 35 mm.
Component
Description
Value
Remarks
[2]
C13, C14,
C15, C16
multilayer ceramic chip capacitor 47 pF
[1]
[1]
[1]
C17
C18
C19
L1
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 36 pF
multilayer ceramic chip capacitor 16 pF
2 turns enamelled copper wire
4 turns enamelled copper wire
metal film resistor
D = 3 mm;
d = 1 mm;
length = 2 mm;
leads = 2 × 6 mm
L2
D = 2 mm;
d = 1 mm;
length = 13 mm;
leads = 2 × 5 mm
R1
100 Ω; 0.6 W
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 180R or capacitor of same quality.
V
DD
C12
V
GG
C8
C9
B1
C10
C13
C15
L1
R1
output
C20 50 Ω
input
50 Ω C1
C3
C4
C6
L2
C2
C19
C18
C5
C7
C14
C16
C11
C17
001aaj162
Fig 9. Class-AB common-source production test circuit
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
9 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
B1
C12
C10
C8
C9
C13 C15
C6
C3
R1
L1
C20
C1
L2
C7
C19
C4
C5
C2
C18
C14 C16
C17
C11
12.2
mm
Use isolated washer
16 mm
29 mm
28 mm
76 mm
001aaj163
Fig 10. Component layout for class-AB production test circuit
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
10 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
9. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895A
D
F
A
D
1
B
U
1
q
c
C
1
L
M
M
M
B
w1
A
p
H
U
2
E
E
1
3
A
2
M M
C
b
w2
Q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D
1
E
E
1
F
H
L
p
Q
q
U
1
U
2
w
w
2
1
4.1
3.3
12.83 0.17
12.57 0.14
19.9 20.42 9.53 9.78
19.7 20.12 9.27 9.53
1.14 19.94 5.3
0.89 18.92 4.5
3.38 1.75
3.12 1.50
34.16 9.98
33.91 9.65
mm
27.94
1.100
0.25
0.6
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
1.345 0.392
1.335 0.380
inches
0.01 0.023
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
06-02-21
06-04-03
SOT895A
Fig 11. Package outline SOT895A
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
11 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
10. Handling information
10.1 Moisture sensitivity
Table 10. Moisture sensitivity level
Test methodology
Class
IPC/JEDEC J-STD-020-D
3
11. Abbreviations
Table 11. Abbreviations
Acronym
CW
Description
Continuous Wave
EDGE
GSM
HF
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
High Frequency
LDMOS
RF
Laterally Diffused Metal-Oxide Semiconductor
Radio Frequency
SMD
TTF
Surface Mount Device
Time To Failure
VHF
Very High Frequency
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 12. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLC573_1
20081211
Preliminary data sheet
-
-
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
12 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLC573_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 December 2008
13 of 14
BLC573
NXP Semiconductors
HF / VHF power LDMOS transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
3
4
5
6
6.1
7
7.1
7.2
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8
8.1
8.1.1
8.1.2
8.2
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Handling information. . . . . . . . . . . . . . . . . . . . 12
Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
10
10.1
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2008
Document identifier: BLC573_1
相关型号：
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