BLC6G22-100 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLC6G22-100 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总9页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1:
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
IMD3
(dBc)
−37[1]
ACPR
(dBc)
−40[1]
(MHz)
(dB)
18
(%)
32
2-carrier W-CDMA
2110 to 2170
25
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
◆ Output power = 25 W (AV)
◆ Gain = 18 dB
◆ Efficiency = 32 %
◆ IMD3 = −37 dBc
◆ ACPR = −40 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Internally matched for ease of use
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2:
Pin
BLC6G22-100 (SOT895-1)
Pinning
Description
Simplified outline
Symbol
1
2
3
drain
gate
1
3
1
3
2
[1]
source
2
sym112
BLC6G22LS-100 (SOT896-1)
1
2
3
drain
gate
1
1
3
2
[1]
source
2
3
sym112
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name Description
Version
BLC6G22-100
-
plastic flanged cavity package; 2 mounting slots; 2 leads SOT895-1
plastic earless flanged cavity package; 2 leads SOT896-1
BLC6G22LS-100 -
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
<tbd>
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
2 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol Parameter
Conditions
Type
Min
Typ
Max
Unit
Rth(j-case) thermal resistance
Tcase = 80 °C; BLC6G22-100
<tbd> <tbd> <tbd> K/W
from junction to case PL = 25 W
BLC6G22LS-100
<tbd> 0.45
0.54
K/W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VGS = 0 V; ID = 0.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 150 mA <tbd> 2
<tbd> V
gate-source quiescent voltage VDS = 28 V; ID = 950 mA <tbd> <tbd> <tbd> V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
-
-
5
-
µA
IDSX
23
27
A
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 13 V; VDS = 0 V
VDS = 10 V; ID = 7.5 A
-
-
-
-
450
nA
S
forward transconductance
10.5
0.1
-
-
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5.25 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
<tbd> -
pF
7. Application information
Table 7:
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter
Conditions
Min
Typ
Max
Unit
W
PL(AV)
Gp
average output power
-
25
-
-
power gain
PL(AV) = 25 W
PL(AV) = 25 W
PL(AV) = 25 W
<tbd> 18
−9
<tbd> 32
dB
IRL
input return loss
drain efficiency
-
<tbd> dB
ηD
-
%
IMD3
ACPR
third order intermodulation distortion PL(AV) = 25 W
adjacent channel power ratio PL(AV) = 25 W
-
-
−37
−40
<tbd> dBc
<tbd> dBc
7.1 Ruggedness in class-AB operation
The BLC6G22-100 and BLC6G22LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 950 mA; PL = 100 W (CW); f = 2170 MHz.
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D
1
B
U
1
q
c
C
1
L
M
M
M
B
w1
A
p
H
U
2
E
E
1
3
A
2
M M
C
b
w2
Q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D
1
E
E
1
F
H
L
p
Q
q
U
1
U
2
w
w
2
1
4.1
3.3
12.83 0.17
12.57 0.14
19.9 20.42 9.53 9.78
19.7 20.12 9.27 9.53
1.14 19.94 5.3
0.89 18.92 4.5
3.38 1.75
3.12 1.50
34.16 9.91
33.91 9.65
mm
27.94
1.100
0.25
0.6
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
1.345 0.390
1.335 0.380
inches
0.01 0.023
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
05-06-22
05-06-28
SOT895-1
Fig 1. Package outline SOT895-1
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
4 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896-1
D
F
A
3
D
1
D
c
U
1
1
L
H
U
2
E
E
1
2
M M
D
b
w2
Q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D
1
E
E
1
F
H
L
Q
U
1
U
2
w
2
4.1
3.3
12.83 0.17
12.57 0.14
19.9 20.42 9.53 9.78
19.7 20.12 9.27 9.53
1.14 19.94 5.3
0.89 18.92 4.5
1.75 20.70 9.91
1.50 20.45 9.65
mm
0.6
0.023
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.390
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380
inches
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
05-06-22
05-06-28
SOT896-1
Fig 2. Package outline SOT896-1
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
5 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
9. Abbreviations
Table 8:
Acronym
3GPP
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
CCDF
CW
DPCH
LDMOS
PAR
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
6 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
10. Revision history
Table 9:
Revision history
Release date Data sheet status
Document ID
Change notice Doc. number
Supersedes
BLC6G22-100_6G22 20060130
LS-100_1
Objective data sheet
-
-
-
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
7 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
Notice — All referenced brands, product names, service names and
13. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BLC6G22-100_6G22LS-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
8 of 9
BLC6G22-100; BLC6G22LS-100
Philips Semiconductors
UHF power LDMOS transistor
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Contact information . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 30 January 2006
Document number: BLC6G22-100_6G22LS-100_1
Published in The Netherlands
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