BGA2850 [NXP]

MMIC wideband amplifier; MMIC宽带放大器器
BGA2850
型号: BGA2850
厂家: NXP    NXP
描述:

MMIC wideband amplifier
MMIC宽带放大器器

放大器
文件: 总18页 (文件大小:510K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BGA2850  
MMIC wideband amplifier  
Rev. 1 — 17 August 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal  
matching circuit in a 6-pin SOT363 plastic SMD package.  
1.2 Features and benefits  
„ Internally matched to 50 Ω  
„ A gain of 24 dB at 950 MHz  
„ Output power at 1 dB gain compression = 1 dBm  
„ Supply current = 9.1 mA at a supply voltage of 5 V  
„ Reverse isolation > 30 dB up to 2 GHz  
„ Good linearity with low second order and third order products  
„ Noise figure = 4.1 dB at 950 MHz  
„ Unconditionally stable (K > 1)  
1.3 Applications  
„ LNB IF amplifiers  
„ General purpose low noise wideband amplifier for frequencies between  
DC and 2.2 GHz  
2. Pinning information  
Table 1.  
Pinning  
Pin  
1
Description  
VCC  
Simplified outline  
Graphic symbol  
1
6
5
4
2, 5  
3
GND2  
6
3
RF_OUT  
GND1  
4
4
2, 5  
1
2
3
6
RF_IN  
sym052  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
3. Ordering information  
Table 2.  
Ordering information  
Type number  
Package  
Name  
-
Description  
plastic surface-mounted package; 6 leads  
Version  
BGA2850  
SOT363  
4. Marking  
Table 3.  
Marking  
Type number  
BGA2850  
Marking code  
*EB  
Description  
* = - : made in Hong Kong  
* = p : made in Hong Kong  
* = W : made in China  
* = t : made in Malaysia  
5. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCC  
ICC  
Parameter  
Conditions  
Min  
Max  
Unit  
supply voltage  
RF input AC coupled  
4.5  
5.5  
36  
V
supply current  
-
mA  
mW  
Ptot  
total power dissipation  
storage temperature  
junction temperature  
drive power  
Tsp = 90 °C  
-
200  
Tstg  
40  
+125 °C  
Tj  
-
-
125  
°C  
Pdrive  
26  
dBm  
6. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-sp)  
Thermal characteristics  
Parameter  
Conditions  
Typ  
300  
Unit  
K/W  
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 °C  
solder point  
7. Characteristics  
Table 6.  
Characteristics  
VCC = 5.0 V; ZS = ZL = 50 Ω; Pi = 39 dBm; Tamb = 25 °C; measured on demo board; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
4.5  
7.3  
Typ  
5.0  
9.1  
Max Unit  
5.5  
10.8 mA  
VCC  
ICC  
supply voltage  
supply current  
V
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
2 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
Table 6.  
Characteristics …continued  
VCC = 5.0 V; ZS = ZL = 50 Ω; Pi = 39 dBm; Tamb = 25 °C; measured on demo board; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
Gp  
power gain  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
3 dB below gain at 1 GHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
22.6 23.2 23.8 dB  
23.3 24.0 24.7 dB  
21.4 22.9 24.3 dB  
RLin  
RLout  
ISL  
NF  
input return loss  
output return loss  
isolation  
17  
15  
10  
16  
11  
12  
38  
39  
34  
3.7  
3.7  
3.6  
2.5  
25  
3.1  
2.0  
1
19  
17  
11  
20  
12  
14  
58  
41  
37  
4.2  
4.1  
4.0  
2.7  
27  
3.4  
2.3  
1
21  
19  
18  
25  
13  
17  
79  
43  
39  
4.7  
4.5  
4.4  
2.9  
29  
3.7  
2.6  
2
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
GHz  
noise figure  
B3dB  
K
3 dB bandwidth  
Rollett stability factor  
PL(sat)  
saturated output power  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
0
1
2
2  
2  
2  
3  
1  
1  
1  
2  
1
PL(1dB) output power at 1 dB gain compression f = 250 MHz  
1  
0
f = 950 MHz  
f = 2150 MHz  
1  
IP3I  
input third-order intercept point  
output third-order intercept point  
second harmonic output power  
Pdrive = 39 dBm (for each tone)  
f1 = 250 MHz; f2 = 251 MHz  
f1 = 950 MHz; f2 = 951 MHz  
f1 = 2150 MHz; f2 = 2151 MHz  
Pdrive = 39 dBm (for each tone)  
f1 = 250 MHz; f2 = 251 MHz  
f1 = 950 MHz; f2 = 951 MHz  
f1 = 2150 MHz; f2 = 2151 MHz  
Pdrive = 36 dBm  
16  
17  
18  
14  
14  
15  
11  
12  
12  
dBm  
dBm  
dBm  
IP3O  
8
8
5
10  
10  
8
12  
12  
11  
dBm  
dBm  
dBm  
PL(2H)  
f1H = 250 MHz; f2H = 500 MHz  
f1H = 950 MHz; f2H = 1900 MHz  
65  
50  
63  
49  
61  
47  
dBm  
dBm  
ΔIM2  
second-order intermodulation distance Pdrive = 39 dBm (for each tone)  
f1 = 250 MHz; f2 = 251 MHz  
32  
33  
43  
45  
54  
56  
dBc  
dBc  
f1 = 950 MHz; f2 = 951 MHz  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
3 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
8. Application information  
Figure 1 shows a typical application circuit for the BGA2850 MMIC. The device is  
internally matched to 50 Ω, and therefore does not need any external matching. The value  
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF  
for applications above 100 MHz. However, when the device is operated below 100 MHz,  
the capacitor value should be increased.  
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the  
MMIC.  
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to  
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes  
as close as possible to the MMIC.  
V
S
C1  
V
S
C2  
C3  
RF_IN  
RF_OUT  
RF input  
RF output  
GND1  
GND2  
001aaf761  
Fig 1. Typical application circuit  
8.1 Application examples  
wideband  
amplifier  
wideband  
amplifier  
LNA  
mixer  
mixer  
to IF circuit  
or demodulator  
from RF  
circuit  
to IF circuit  
or demodulator  
antenna  
oscillator  
oscillator  
001aaf762  
001aaf763  
The MMIC is very suitable as IF amplifier in e.g. LNB’s.  
The excellent wideband characteristics make it an easy  
building block.  
As second amplifier after an LNA, the MMIC offers an  
easy matching, low noise solution.  
Fig 2. Application as IF amplifier  
Fig 3. Application as RF amplifier  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
4 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
8.2 Graphs  
90°  
1.0  
+1  
0.8  
135°  
45°  
+0.5  
+2  
0.6  
0.4  
0.2  
+0.2  
+5  
(3)  
0
0.2  
0.5  
1
2
5
10  
0°  
0
180°  
(2)  
(1)  
5  
0.2  
2  
0.5  
135°  
45°  
1  
1.0  
001aam289  
90°  
Tamb = 25 °C; ICC = 8.6 mA; VCC = 5.0 V; Z0 = 50 Ω.  
(1) f = 250 MHz  
(2) f = 950 MHz  
(3) f = 2150 MHz  
Fig 4. Input reflection coefficient (S11); typical values  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
5 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
90°  
1.0  
+1  
0.8  
135°  
45°  
+0.5  
+2  
0.6  
0.4  
0.2  
+0.2  
+5  
(3)  
(1)  
0
0.2  
0.5  
1
2
5
10  
0°  
0
180°  
(2)  
5  
0.2  
2  
0.5  
135°  
45°  
1  
1.0  
001aam290  
90°  
Tamb = 25 °C; ICC = 8.6 mA; VCC = 5.0 V; Z0 = 50 Ω.  
(1) f = 250 MHz  
(2) f = 950 MHz  
(3) f = 2150 MHz  
Fig 5. Output reflection coefficient (S22); typical values  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
6 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
001aam291  
001aam292  
3
10  
0
K
(1)  
(2)  
(3)  
(4)  
(5)  
RL  
(dB)  
in  
2
10  
10  
20  
30  
(1)  
(2)  
(3)  
(4)  
(5)  
10  
1
1  
10  
0
1
2
3
0
1
2
3
f (GHz)  
f (GHz)  
Pdrive = 40 dBm; Z0 = 50 Ω.  
P
drive = 40 dBm; Z0 = 50 Ω.  
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 7.13 mA  
(2) VCC = 4.5 V; Tamb = 40 °C; ICC = 8.50 mA  
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 8.65 mA  
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 8.85 mA  
(5) VCC = 5.5 V; Tamb = 40 °C; ICC = 10.28 mA  
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 7.13 mA  
(2) VCC = 4.5 V; Tamb = 40 °C; ICC = 8.50 mA  
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 8.65 mA  
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 8.85 mA  
(5) VCC = 5.5 V; Tamb = 40 °C; ICC = 10.28 mA  
Fig 6. Rollett stability factor as function of frequency;  
typical values  
Fig 7. Input return loss as function of frequency;  
typical values  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
7 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
001aam293  
001aam294  
0
35  
G
(dB)  
p
RL  
(dB)  
out  
30  
10  
(5)  
(4)  
(3)  
(2)  
(1)  
25  
20  
15  
(1)  
(2)  
(3)  
(4)  
(5)  
20  
30  
0
1
2
3
0
1
2
3
f (GHz)  
f (GHz)  
Pdrive = 40 dBm; Z0 = 50 Ω.  
P
drive = 40 dBm; Z0 = 50 Ω.  
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 7.13 mA  
(2) VCC = 4.5 V; Tamb = 40 °C; ICC = 8.50 mA  
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 8.65 mA  
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 8.85 mA  
(5) VCC = 5.5 V; Tamb = 40 °C; ICC = 10.28 mA  
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 7.13 mA  
(2) VCC = 4.5 V; Tamb = 40 °C; ICC = 8.50 mA  
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 8.65 mA  
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 8.85 mA  
(5) VCC = 5.5 V; Tamb = 40 °C; ICC = 10.28 mA  
Fig 8. Output return loss as function of frequency;  
typical values  
Fig 9. Insertion power gain as function of frequency;  
typical values  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
8 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
001aam295  
001aam296  
0
6
5
4
3
2
NF  
(dB)  
ISL  
(dB)  
(1)  
(4)  
(5)  
(4)  
(3)  
(2)  
(1)  
20  
40  
60  
80  
(3)  
(2)  
(5)  
0
1
2
3
0
1
2
3
f (GHz)  
f (GHz)  
Pdrive = 40 dBm; Z0 = 50 Ω.  
Z0 = 50 Ω.  
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 7.13 mA  
(2) VCC = 4.5 V; Tamb = 40 °C; ICC = 8.50 mA  
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 8.65 mA  
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 8.85 mA  
(5) VCC = 5.5 V; Tamb = 40 °C; ICC = 10.28 mA  
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 7.13 mA  
(2) VCC = 4.5 V; Tamb = 40 °C; ICC = 8.50 mA  
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 8.65 mA  
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 8.85 mA  
(5) VCC = 5.5 V; Tamb = 40 °C; ICC = 10.28 mA  
Fig 10. Isolation as function of frequency;  
typical values  
Fig 11. Noise figure as function of frequency;  
typical values  
8.3 Tables  
Table 7.  
Supply current over temperature and supply voltages  
Typical values.  
Symbol  
Parameter  
Conditions  
Tamb (°C)  
40  
Unit  
25  
85  
ICC  
supply current  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
8.50  
7.74  
8.65  
9.52  
7.13  
7.99  
8.85  
mA  
mA  
mA  
9.40  
10.28  
Table 8.  
Second harmonic output power over temperature and supply voltages  
Typical values.  
Symbol Parameter  
Conditions  
Tamb (°C)  
40 25 85  
Unit  
PL(2H)  
second harmonic output power f = 250 MHz; Pdrive = 36 dBm  
VCC = 4.5 V  
VCC = 5.0 V  
55 62 61 dBm  
56 63 60 dBm  
58 63 61 dBm  
VCC = 5.5 V  
f = 950 MHz; Pdrive = 36 dBm  
VCC = 4.5 V  
46 50 54 dBm  
46 49 52 dBm  
45 48 51 dBm  
VCC = 5.0 V  
VCC = 5.5 V  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
9 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
Table 9.  
Input power at 1 dB gain compression over temperature and supply voltages  
Typical values.  
Symbol Parameter  
Conditions  
Tamb (°C)  
40 25  
Unit  
85  
Pi(1dB)  
input power at 1 dB gain compression f = 250 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
f = 950 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
f = 2150 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
23.7 23.7 23.5 dBm  
23.4 23.4 23.3 dBm  
23.0 23.1 23.1 dBm  
24.1 23.9 23.7 dBm  
23.8 23.7 23.6 dBm  
23.5 23.5 23.4 dBm  
24.2 24.0 23.9 dBm  
24.0 23.9 23.9 dBm  
23.8 23.8 24.0 dBm  
Table 10. Output power at 1 dB gain compression over temperature and supply voltages  
Typical values.  
Symbol Parameter  
Conditions  
Tamb (°C)  
40 25  
Unit  
85  
PL(1dB)  
output power at 1 dB gain compression  
f = 250 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
f = 950 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
f = 2150 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
1.8 2.4 2.9 dBm  
0.7 1.4 1.9 dBm  
0.3 0.5 1.1 dBm  
1.6 2.3 3.0 dBm  
0.5 1.2 1.9 dBm  
0.6 0.3 1.1 dBm  
2.4 3.4 4.5 dBm  
1.2 2.3 3.5 dBm  
0.1 1.5 2.8 dBm  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
10 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
Table 11. Saturated output power over temperature and supply voltages  
Typical values.  
Symbol  
Parameter  
Conditions  
Tamb (°C)  
Unit  
40  
25  
85  
PL(sat)  
saturated output power  
f = 250 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
f = 950 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
f = 2150 MHz  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
0.2  
1.9  
2.8  
0.3  
1.4  
0.8  
0.9  
dBm  
dBm  
dBm  
2.1  
1.6  
0.6  
1.6  
3.2  
0.1  
0.9  
0.8  
0.2  
dBm  
dBm  
dBm  
1.7  
1.7  
0.5  
0.5  
1.5  
0.5  
0.2  
2.7  
1.8  
1.1  
dBm  
dBm  
dBm  
1.5  
Table 12. Second-order intermodulation distance over temperature and supply voltages  
Typical values.  
Symbol Parameter  
Conditions  
Tamb (°C)  
Unit  
40 25 85  
ΔIM2  
second-order intermodulation distance  
f1 = 250 MHz;  
f2 = 251 MHz;  
Pdrive = 39 dBm  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
50 44 37 dBc  
57 43 37 dBc  
51 42 37 dBc  
f1 = 950 MHz;  
f2 = 951 MHz;  
Pdrive = 39 dBm  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
45 47 37 dBc  
55 44 37 dBc  
60 43 37 dBc  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
11 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
Table 13. Output third-order intercept point over temperature and supply voltages  
Typical values.  
Symbol Parameter  
Conditions  
Tamb (°C)  
40 25  
Unit  
85  
IP3O  
output third-order intercept point  
f1 = 250 MHz;  
f2 = 251 MHz;  
Pdrive = 39 dBm  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
9.9  
8.3  
6.9  
8.2  
dBm  
dBm  
dBm  
11.5 9.7  
12.7 10.6 9.3  
f1 = 950 MHz;  
f2 = 951 MHz;  
P
drive = 39 dBm  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
10.0 8.4  
11.4 9.7  
6.9  
8.1  
dBm  
dBm  
dBm  
12.7 10.7 9.1  
f1 = 2150 MHz;  
f2 = 2151 MHz;  
Pdrive = 39 dBm  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
8.1  
9.6  
6.6  
7.7  
4.7  
6.0  
6.5  
dBm  
dBm  
dBm  
10.6 8.6  
Table 14. 3 dB bandwidth over temperature and supply voltages  
Typical values.  
Symbol  
Parameter  
Conditions  
Tamb (°C)  
40  
Unit  
25  
85  
2.539  
B3dB  
3 dB bandwidth  
VCC = 4.5 V  
VCC = 5.0 V  
VCC = 5.5 V  
2.798  
2.814  
2.826  
2.670  
2.690  
2.701  
GHz  
GHz  
GHz  
2.554  
2.570  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
12 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
9. Test information  
30 mm  
IC1  
C3  
C2  
30  
mm  
C1  
001aal226  
True size = 30 mm × 30 mm.  
Fig 12. PCB layout and demo board with components  
Table 15. List of components used for the typical application  
Component  
C1, C2  
C3  
Description  
Value  
Dimensions  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
BGA2850 MMIC  
100 pF  
22 nF  
0603  
0603  
IC1  
SOT363  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
13 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
10. Package outline  
Plastic surface-mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-08  
06-03-16  
SOT363  
SC-88  
Fig 13. Package outline SOT363  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
14 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
11. Abbreviations  
Table 16. Abbreviations  
Acronym  
DC  
Description  
Direct Current  
IF  
Intermediate Frequency  
Low-Noise Amplifier  
Low-Noise Block converter  
Printed-Circuit Board  
Radio Frequency  
LNA  
LNB  
PCB  
RF  
SMD  
Surface Mounted Device  
12. Revision history  
Table 17. Revision history  
Document ID  
Release date  
20100817  
Data sheet status  
Change notice  
Supersedes  
BGA2850 v.1  
Product data sheet  
-
-
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
15 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
13.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
16 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BGA2850  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 17 August 2010  
17 of 18  
BGA2850  
NXP Semiconductors  
MMIC wideband amplifier  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
8
Application information. . . . . . . . . . . . . . . . . . . 4  
Application examples . . . . . . . . . . . . . . . . . . . . 4  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
8.1  
8.2  
8.3  
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 13  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15  
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 17  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 17 August 2010  
Document identifier: BGA2850  

相关型号:

BGA2851

RF Manual 16th edition
NXP

BGA2851,115

BGA2851 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2865

RF Manual 16th edition
NXP

BGA2866

RF Manual 16th edition
NXP

BGA2866,115

BGA2866 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2867

RF Manual 16th edition
NXP

BGA2867,115

BGA2867 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2868

RF Manual 16th edition
NXP

BGA2869

RF Manual 16th edition
NXP

BGA2869,115

BGA2869 - MMIC wideband amplifier TSSOP 6-Pin
NXP

BGA2870

MMIC wideband amplifier Internally matched to 50 Ω
NXP

BGA2874

RF Manual 16th edition
NXP