BFQ621 [NXP]
NPN 7 GHz wideband transistor; NPN 7 GHz的宽带晶体管
| 型号： | BFQ621 |
| 厂家： | 
NXP |
| 描述： | NPN 7 GHz wideband transistor |
| 文件： | 总10页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ621
NPN 7 GHz wideband transistor
1995 Sep 26
Product specification
Supersedes data of 1995 Apr 11
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor in a 4-lead dual-emitter SOT172A2
package with a ceramic cap. All leads are isolated from the
mounting base. Emitter ballasting resistors and application
of gold sandwich metallization ensures an optimum
temperature profile and excellent reliability properties.
• High output voltage
• High maximum junction temperature
• Gold metallization ensures excellent reliability.
APPLICATIONS
handbook, halfpage
4
It is primarily intended for use in MATV and microwave
amplifiers, such as aerial amplifiers, radar systems,
oscilloscopes, spectrum analyzers, etc.
1
3
PINNING
2
PIN
1
DESCRIPTION
collector
emitter
base
Top view
MSA457
2
3
Fig.1 SOT172A2.
4
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open base
MIN.
TYP.
MAX.
16
UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
−
−
−
−
−
−
−
V
150
8
mA
W
Ptot
hFE
up to Tmb = 25 °C
IC = 120 mA; VCE = 18 V;
40
−
Tamb = 25 °C
fT
transition frequency
IC = 120 mA; VCE = 18 V;
f = 1 GHz; Tamb = 25 °C
−
7
−
−
−
GHz
dB
V
GUM
VO
maximum unilateral power gain IC = 120 mA; VCE = 18 V;
−
18.5
1.2
f = 500 MHz; Tamb = 25 °C
output voltage
IC = 120 mA; VCE = 18 V;
f(p + q − r) = 793.25 MHz;
dim = −60 dB; RL = 75 Ω
−
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Sep 26
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
25
UNIT
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
V
V
V
open base
16
open collector
2
150
8
mA
W
Ptot
up to Tmb = 25 °C
Tstg
−65
+175
+200
°C
°C
Tj
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
21.9
UNIT
K/W
Rth j-mb
thermal resistance from junction to mounting base Ptot = 8 W; up to Tmb = 25 °C
1995 Sep 26
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
25
UNIT
IC = 0.1 mA; IE = 0
−
−
−
−
−
−
−
−
−
7
V
16
2
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
IE = 0; VCB = 18 V
V
ICBO
hFE
fT
collector-base leakage current
DC current gain
100
160
−
µA
IC = 50 mA; VCE = 10 V
50
transition frequency
IC = 120 mA; VCE = 18 V;
f = 1 GHz; see Fig.3
−
GHz
pF
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 18 V;
f = 1 MHz
−
−
−
−
−
1.5
−
Ce
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
5
−
pF
Cre
GUM
IC = 0; VCE = 18 V; f = 1 MHz;
see Fig.4
0.85
18.5
14.5
1.2
−
pF
maximum unilateral power gain;
note 1
IC = 120 mA; VCE = 18 V;
f = 500 MHz; Tamb = 25 °C;
dB
dB
IC = 120 mA; VCE = 18 V;
−
f = 800 MHz; Tamb = 25 °C;
VO
d2
output voltage
note 2
note 3
note 4
note 5
−
−
−
−
1.35
1.2
−
−
−
−
V
V
second order intermodulation
distortion
−60
−60
dB
dB
Notes
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
dB.
2
(1 – s11 2) (1 – s22
)
2. dim = −60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO; fp = 445.25 MHz;
Vq = VO −6 dB; fq = 453.25 MHz;
Vr = VO −6 dB; fr = 455.25 MHz;
measured at f(p + q − r) = 443.25 MHz; see Fig.5.
3. dim = −60dB (DIN45004B); see Fig.2; IC = 120 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at f(p + q − r) = 793.25 MHz; see Fig.6.
4. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C;
measured at f(p + q) = 450 MHz; see Fig.7.
5. VO = 50 dBmV = 316 mV; IC = 90 mA; VCE = 18 V; RL = 75 Ω; Tamb = 25 °C;
measured at f(p + q) = 810 MHz; see Fig.8.
1995 Sep 26
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
V
CC
10 nF
L2
10 nF
10 nF
4.7 µF
L4
V
BB
10 nF
L6
L3
output
75 Ω
10 kΩ
240 Ω
10 nF
L5
L1
input
75 Ω
DUT
1 pF
1 pF
33
33
Ω
Ω
MEA260
L1 = 8 nH.
L2 = 15 nH, 2 turns copper wire, internal diameter 2 mm.
L3 = 10 nH, 2 turns copper wire, internal diameter 1.5 mm.
L5: Lp = 21 mm; Rc = 75 Ω.
L6: Lp = 16 mm; Rc = 75 Ω.
Fig.2 Intermodulation distortion and second order distortion MATV test circuit.
MLC990
MLC991
2.0
10
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
8
1.5
6
4
2
1.0
0.5
0
0
0
0
5
10
15
20
25
(V)
50
100
150
200
I
(mA)
C
V
CB
VCE = 18 V; f = 1 GHz.
IC = 0; f = 1 MHz.
Fig.3 Transition frequency as a function
of collector current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
1995 Sep 26
5
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
MLC992
MLC993
0
0
handbook, halfpage
handbook, halfpage
d
d
im
im
(dB)
20
(dB)
20
40
60
80
40
60
80
0
0
50
100
150
200
50
100
150
200
I
(mA)
I
(mA)
C
C
VO = 1.35 V; VCE = 18 V; f(p + q − r) = 443.25 MHz; see Fig.2.
VO = 1.2 V; VCE = 18 V; f(p + q − r) = 793.25 MHz; see Fig.2.
Fig.5 Intermodulation distortion as a function
of collector current; typical values.
Fig.6 Intermodulation distortion as a function
of collector current; typical values.
MLC994
MLC995
0
0
handbook, halfpage
handbook, halfpage
d
2
d
2
(dB)
(dB)
20
20
40
60
80
40
60
80
0
50
100
150
0
50
100
150
I
(mA)
I
(mA)
C
C
VO = 50dBmV = 316 mV; VCE = 18 V; f(p + q) = 450 MHz; see Fig.2.
VO = 50dBmV = 316 mV; VCE = 18 V; f(p + q) = 810 MHz; see Fig.2.
Fig.7 Second order distortion as a function
of collector current; typical values.
Fig.8 Second order distortion as a function
of collector current; typical values.
1995 Sep 26
6
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
3 GHz
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MLC996
1.0
o
90
VCE = 18 V; IC = 120 mA; Zo = 50 Ω.
Fig.9 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
3 GHz
o
o
180
0
50
40
30
20
10
o
o
135
45
o
MLC997
90
VCE = 18 V; IC = 120 mA.
Fig.10 Common emitter forward transmission coefficient (s21); typical values.
7
1995 Sep 26
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
o
90
o
o
135
45
3 GHz
40 MHz
o
o
180
0
0.5
0.4
0.3
0.2
0.1
o
o
135
45
o
MLC998
90
VCE = 18 V; IC = 120 mA.
Fig.11 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
3 GHz
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MLC999
1.0
o
90
VCE = 18 V; IC = 120 mA; Zo = 50 Ω.
Fig.12 Common emitter output reflection coefficient (s22); typical values.
8
1995 Sep 26
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
SPICE parameters for the BFQ621 crystal
SEQUENCE No. PARAMETER
VALUE
UNIT
fA
1
IS
1.358
112.2
0.991
78.06
4.291
643.3
1.851
5.776
0.999
2.350
50.26
2.454
1.175
8.000
1.000
8.000
1.585
1.880
0.000
1.110
3.000
3.985
0.600
0.327
14.02
398.1
2.940
3.084
45.00
1.529
0.216
0.158
0.120
9.070
0.000
750.0
0.000
0.735
C
handbook, halfpage
cb
2
BF
−
3
NF
−
L
L1
L2
B
4
VAF
IKF
ISE
NE
V
B
B' C'
E'
C
5
A
6
fA
−
7
L
E
8
BR
−
C
9
NR
−
C
be
ce
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
VAR
IKR
ISC
NC
V
L3
L4
L5
mA
fA
−
L6
RB
Ω
µA
Ω
Ω
Ω
−
IRB
RBM
RE
MLD001
E
RC
XTB
EG
Fig.13 Package equivalent circuit SOT172A2.
eV
−
XTI
CJE
VJE
MJE
TF
List of components (see Fig.13)
DESIGNATION VALUE
Cbe
pF
V
UNIT
fF
−
225
ps
−
Ccb
36
fF
XTF
VTF
ITF
Cce
362
fF
mV
A
L1(1)
L2(1)
L3(1)
L4(1)
L5(1)
L6(1)
LB
L = 1.37; W = 2.64
L = 1.60; W = 2.64
L = 0.51; W = 0.33
L = 0.81; W = 2.06
L = 2.77; W = 0.33
L = 0.94; W = 2.06
1.85
mm
mm
mm
mm
mm
mm
nH
PTF
CJC
VJC
MJC
XCJC
TR
deg
pF
V
−
−
ns
F
LE
1.22
nH
CJS
VJS
MJS
FC
Note
mV
−
1. The micro striplines are on a double copper-clad
substrate; εr = 6.5; h = 1.18 mm.
−
Note
1. These parameters have not been extracted, the
default values are shown.
1995 Sep 26
9
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ621
PACKAGE OUTLINE
2.9
1.5
0.13
4
8.5
min
(4x)
0.9
0.6
8 - 32 UNC
(2x)
1
24
22
5.25 5.35
max max
3
o
6.9
min
90
2
1.70
1.35
2.9
2.3
(2x)
24
22
11.8
10.8
5.2
max
MBC866
Dimensions in mm.
Fig.14 SOT172A2.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 26
10
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