BFQ67 [NXP]
NPN 8 GHz wideband transistor; NPN 8 GHz宽带晶体管
| 型号： | BFQ67 |
| 厂家： | 
NXP |
| 描述： | NPN 8 GHz wideband transistor |
| 文件： | 总12页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFQ67
NPN 8 GHz wideband transistor
1998 Aug 27
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
FEATURES
DESCRIPTION
• High power gain
Silicon NPN wideband transistor in a
plastic SOT23 package.
lfpage
3
• Low noise figure
• High transition frequency
PINNING
• Gold metallization ensures
excellent reliability.
1
2
PIN
DESCRIPTION
Top view
MSB003
1
2
3
base
APPLICATIONS
emitter
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
collector
Marking code: V2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
−
−
20
10
50
300
−
V
−
−
V
−
−
mA
mW
Ptot
Ts ≤ 97 °C; note 1
−
−
hFE
IC = 15 mA; VCE = 5 V
IC = 15 mA; VCE = 8 V
IC = 15 mA; VCE = 8 V; f = 1 GHz
60
−
100
8
fT
transition frequency
−
GHz
dB
GUM
maximum unilateral
power gain
−
14
−
F
noise figure
IC = 5 mA; VCE = 8 V; f = 1 GHz
−
1.3
−
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
V
V
V
−
10
open collector
−
2.5
−
50
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 97 °C; note 1
−
300
+150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1998 Aug 27
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector lead.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN. TYP. MAX. UNIT
−
−
50
−
nA
hFE
Cc
IC = 15 mA; VCE = 5 V
60
−
100
0.7
1.3
0.5
8
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V
−
pF
Ce
−
−
pF
Cre
fT
−
−
pF
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 15 mA; VCE = 8 V;
−
14
−
(note 1)
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 8 V; f = 2 GHz
−
−
8
−
−
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
1.3
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
−
−
−
−
1.7
2.2
2.5
2.7
3
−
−
−
−
−
dB
dB
dB
dB
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; Zs = 60 Ω
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; Zs = 60 Ω
Note
2
S21
--------------------------------------------------------------
1 – S11
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB .
2
2
1 – S22
1998 Aug 27
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
MRA614
MBB301
400
handbook, halfpage
120
handbook, halfpage
P
tot
(mW)
h
FE
300
80
40
200
100
0
0
0
0
50
100
150
200
20
40
60
o
( C)
T
I
(mA)
s
C
VCE = 5 V.
Fig.3 DC current gain as a function of collector
current, typical values.
Fig.2 Power derating curve.
MRA607
MBB303
10
0.8
handbook, halfpage
handbook, halfpage
f
T
C
re
(GHz)
8
(pF)
0.6
6
4
2
0
0.4
0.2
0
0
5
10
15
0
10
20
30
40
V
(V)
I
(mA)
CB
C
IC = ic = 0; f = 1 MHz.
VCE = 8 V; Tamb = 25 °C; f = 2 GHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5 Transition frequency as a function of
collector current, typical values.
1998 Aug 27
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
MRA611
MRA610
25
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
40
G
UM
MSG
G
max
15
10
5
30
G
UM
MSG
20
10
G
max
0
0
10
2
4
3
0
10
20
30
10
10
10
I
(mA)
f (MHz)
C
VCE = 8 V; IC = 5 mA.
VCE = 8 V; f = 1 GHz.
Fig.7 Gain as a function of frequency, typical
values.
Fig.6 Gain as a function of collector current,
typical values.
MRA608
MRA609
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
G
UM
G
UM
30
30
MSG
MSG
20
20
G
max
10
0
G
10
0
max
2
4
2
4
3
3
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 8 V; IC = 15 mA.
VCE = 8 V; IC = 30 mA.
Fig.8 Gain as a function of frequency, typical
values.
Fig.9 Gain as a function of frequency, typical
values.
1998 Aug 27
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
MRA613
MBB308
5
4
handbook, halfpage
handbook, halfpage
F
(dB)
4
f = 2 GHz
F
(dB)
3
1 GHz
900 MHz
3
2
1
Z
S = 60 Ω
500 MHz
2
optimum
source
1
0
0
1
2
10
10
1
10
100
I
(mA)
C
I
(mA)
C
VCE = 8 V.
VCE = 6 V; f = 900 MHz.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
Fig.11 Noise figure as a function of collector
current, typical values.
MRA612
MBB309
5
4
handbook, halfpage
handbook, halfpage
F
(dB)
4
F
(dB)
I
= 30 mA
C
I
3
2
C = 0.5 mA
15 mA
5 mA
3
1 mA
2 mA
2
1
1
0
0
10
4
2
3
10
10
10
2
3
4
f (MHz)
10
10
f (MHz)
VCE = 8 V.
VCE = 1 V.
Fig.12 Minimum noise figure as a function of
frequency, typical values.
Fig.13 Minimum noise figure as a function of
frequency, typical values.
1998 Aug 27
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
1
0.5
2
0.2
5
3 GHz
10
+ j
− j
0.2
1
2
5
10
∞
0
10
40 MHz
5
0.2
2
0.5
MBC968
1
VCE = 8 V; IC = 15 mA; Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11), typical values.
90°
120°
60°
150°
30°
40 MHz
+ ϕ
− ϕ
3 GHz
0.2
0.1
180°
0°
30°
150°
60°
120°
MBC967
90°
VCE = 8 V; IC = 15 mA.
Fig.15 Common emitter forward transmission coefficient (S21), typical values.
7
1998 Aug 27
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
90°
120°
60°
3 GHz
o
150°
30
+ ϕ
− ϕ
40 MHz
0.2
0.1
180°
0°
30°
150°
60°
120°
MBC966
90°
VCE = 8 V; IC = 15 mA.
Fig.16 Common emitter reverse transmission coefficient (S12), typical values.
1
0.5
2
0.2
5
10
+ j
− j
0.2
0.5
1
2
5
10
0
∞
40 MHz
3 GHz
10
5
0.2
2
0.5
MBC965
1
VCE = 8 V; IC = 15 mA; Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22), typical values.
8
1998 Aug 27
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1998 Aug 27
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 27
10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67
NOTES
1998 Aug 27
11
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/04/pp12
Date of release: 1998 Aug 27
Document order number: 9397 750 04295
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