BFG505W/X [NXP]
NPN 9 GHz wideband transistors; NPN 9 GHz宽带晶体管
| 型号： | BFG505W/X |
| 厂家： | 
NXP |
| 描述： | NPN 9 GHz wideband transistors |
| 文件： | 总16页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFG505W; BFG505W/X
NPN 9 GHz wideband transistors
1998 Oct 02
Product specification
Supersedes data of August 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
BFG505W
collector
BFG505W/X
collector
• High transition frequency
• Gold metallization ensures excellent reliability.
1
2
3
4
base
emitter
base
emitter
emitter
APPLICATIONS
emitter
RF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT2, CT3, PCN, DECT, etc.), radar detectors, pagers,
satellite television tuners (SATV).
handbook, halfpage
4
1
3
2
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
Top view
MBK523
MARKING
TYPE NUMBER
CODE
BFG505W
N0
N1
Fig.1 Simplified outline SOT343N.
BFG505W/X
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
open emitter
−
−
20
15
18
500
250
−
V
collector-emitter voltage RBE = 0
collector current (DC)
−
−
V
−
−
mA
mW
Ptot
hFE
Cre
total power dissipation
DC current gain
Ts ≤ 85 °C
IC = 5 mA; VCE = 6 V
−
−
60
−
120
0.2
9
feedback capacitance
transition frequency
IC = 0; VCB = 6 V; f = 1 MHz
pF
fT
IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C
−
−
GHz
dB
dB
dB
dB
GUM
maximum unilateral
power gain
−
19
12
16
1.9
−
−
|S21|2
F
insertion power gain
noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 15
−
Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz
−
−
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
V
V
V
RBE = 0
15
open collector
2.5
18
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 85 °C; see Fig.2; note 1
500
+150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T
( C)
s
Fig.2 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CES collector-emitter breakdown voltage IC = 10 µA; RBE = 0
V(BR)EBO emitter-base breakdown voltage
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC = 2.5 µA ; IE = 0
20
15
2.5
−
−
−
V
−
−
V
IE = 2.5 µA; IC = 0
−
−
V
ICBO
hFE
fT
collector leakage current
DC current gain
VCB = 6 V; IE = 0
−
50
250
−
nA
IC = 5 mA; VCE = 6 V see Fig.3
IC = 5 mA; VCE = 6 V; f = 1 GHz;
60
−
120
9
transition frequency
GHz
Tamb = 25 °C; see Fig.5
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
−
−
0.3
0.4
0.2
−
−
−
pF
pF
pF
Ce
Cre
IC = 0; VCB = 6 V; f = 1 MHz;
see Fig.4
GUM
maximum unilateral power gain;
note 1
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
12
16
1.2
1.6
1.9
4
−
dB
IC = 5 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
−
dB
|S21|2
F
insertion power gain
noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz;
15
−
−
dB
Tamb = 25 °C
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 900 MHz
1.7
2.1
−
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
−
dB
Γs = Γopt; IC = 1.25 mA; VCE = 6 V;
f = 2 GHz
−
dB
PL1
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; f = 900 MHz;
RL = 50 Ω; Tamb = 25 °C
−
−
dBm
dBm
ITO
third order intercept point
note 2
−
10
−
Notes
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero.GUM = 10 log
dB.
--------------------------------------------------------------
(1 – S11 2) (1 – S22
)
2
2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
MLC032
MRA639
250
0.4
handbook, halfpage
handbook, halfpage
C
h
re
FE
(pF)
0.3
200
150
100
50
0.2
0.1
0
0
0
10
−3
−2
−1
2
10
10
1
10
10
(mA)
2
4
6
8
10
(V)
I
C
V
CB
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLC033
12
handbook, halfpage
f
T
V
V
= 6 V
= 3 V
CE
CE
(GHz)
8
4
0
1
2
10
1
10
10
I
(mA)
C
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
MLC034
MLC035
30
30
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
20
20
G
UM
MSG
G
max
G
UM
10
10
0
0
0
4
8
10
12
0
4
8
10
12
I
(mA)
I
(mA)
C
C
f = 900 MHz; VCE = 6 V.
f = 2 GHz; VCE = 6 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLC036
MLC037
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
G
UM
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 1.25 mA; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
MRA650
MLC038
5
20
4
handbook, halfpage
handbook, halfpage
G
F
f = 900 MHz
ass
min
F
(dB)
(dB)
(dB)
15
4
1000 MHz
2000 MHz
3
G
ass
10
5
3
2
2
f = 2000 MHz
2000 MHz
1000 MHz
900 MHz
500 MHz
F
min
1000 MHz
900 MHz
500 MHz
1
0
1
0
−5
0
10
−1
10
1
1
10
1
10
I
(mA)
C
I
(mA)
C
VCE = 6 V.
VCE = 6 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Associated available gain as a function of
collector current; typical values.
MRA651
MLC039
5
20
G
4
5 mA
I
= 1.25 mA
handbook, halfpage
handbook, halfpage
C
F
ass
min
F
(dB)
(dB)
(dB)
G
ass
15
4
3
2
10
5
3
2
I
= 5 mA
C
5 mA
1.25 mA
F
1
min
0
1
0
1.25 mA
−5
0
10
4
2
3
10
10
10
2
3
4
f (MHz)
10
10
f (MHz)
VCE = 6 V.
VCE = 6 V.
Fig.12 Minimum noise figure as a function
of frequency; typical values.
Fig.13 Associated available gain as a function
of frequency; typical values.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
pot. unst.
90°
region
1.0
0.8
1
135°
45°
2
0.5
0.6
0.4
0.2
0
stability
0.2
5
circle
F
= 1. 2 dB
min
Γ
OPT
F = 1.5 dB
2
0.2
0.5
1
5
180°
0°
0
F = 2 dB
F = 3 dB
5
0.2
0.5
2
−45°
−135°
1
MRA652
1.0
−90°
f = 900 MHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
pot. unst.
region
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
Γ
OPT
0.2
5
F
= 1. 9 dB
min
stability
circle
F = 2.5 dB
1
0.2
0.5
2
5
180°
0°
0
F = 3 dB
F = 4 dB
5
0.2
0.5
2
−45°
−135°
1
MRA653
1.0
−90°
f = 2 GHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 Ω.
Fig.15 Common emitter noise figure circles; typical values.
8
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MLC040
1.0
o
90
VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.16 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
135
45
40 MHz
9
3 GHz
o
o
180
0
15
12
6
3
o
o
135
45
o
MLC041
90
VCE = 6 V; IC = 5 mA.
Fig.17 Common emitter forward transmission coefficient (S21); typical values.
9
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
o
90
o
o
135
45
3 GHz
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MLC042
90
VCE = 6 ; IC = 5 mA.
Fig.18 Common emitter reverse transmission coefficient (S12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
3 GHz
0.5
2
o
o
45
135
1
MLC043
1.0
o
90
VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.19 Common emitter output reflection coefficient (S22); typical values.
10
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
SPICE parameters for the BFG505W(/X) die
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36 (1)
37 (1)
38
VJS
MJS
FC
750.0
0.000
0.897
1
IS
134.1
180.0
0.988
38.34
150.0
27.81
2.051
55.19
0.982
2.459
2.920
17.45
1.062
20.00
1.000
20.00
1.171
4.350
0.000
1.110
3.000
284.7
600.0
0.303
7.037
12.34
1.701
30.64
0.000
242.4
188.6
0.041
0.130
1.332
0.000
aA
−
−
−
2
BF
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
mA
fA
−
1. These parameters have not been extracted, the
default values are shown.
6
7
8
BR
−
9
NR
−
C
handbook, halfpage
cb
10
11
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
VAR
IKR
ISC
NC
V
mA
aA
−
L
B
L1
L2
B
B'
C'
C
E'
C
C
RB
Ω
be
ce
IRB
RBM
RE
µA
Ω
L
E
MBC964
Ω
L3
RC
Ω
XTB
EG
−
E
eV
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
XTI
CJE
VJE
MJE
TF
fF
mV
−
Fig.20 Package equivalent circuit SOT343N.
ps
−
List of components (see Fig.20)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
70
fF
mA
deg
fF
mV
−
50
fF
PTF
CJC
VJC
MJC
XCJC
TR
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
L3
−
LB
ns
F
LE
CJS
1998 Oct 02
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
B
E
A
X
H
y
v M
A
E
e
4
3
Q
A
A
1
c
1
2
b
1
b
p
w M B
L
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
1.15
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343N
97-05-21
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
NOTES
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X
NOTES
1998 Oct 02
15
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Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Oct 02
Document order number: 9397 750 04345
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