BF909WRT/R [NXP]
TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICROMINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal;
| 型号： | BF909WRT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICROMINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal 栅 |
| 文件： | 总11页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF909; BF909R
N-channel dual gate MOS-FETs
1995 Apr 25
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
PINNING
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
PIN
1
SYMBOL
DESCRIPTION
s, b
d
source
drain
2
3
g2
g1
gate 2
gate 1
DESCRIPTION
4
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
d
d
handbook, halfpage
handbook, halfpage
3
4
4
3
2
g
2
g
2
g
g
1
1
2
1
1
s,b
s,b
Top view
MAM125 - 1
Top view
MAM124
BF909 marking code: M28.
BF909R marking code: M29.
Fig.1 Simplified outline (SOT143) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
−
−
−
−
−
−
7
V
ID
drain current
40
mA
mW
°C
Ptot
Tj
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
200
150
50
yfs
36
−
43
3.6
35
2
mS
pF
Cig1-s
Crs
F
4.3
50
f = 1 MHz
−
fF
f = 800 MHz
−
2.8
dB
1995 Apr 25
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
ID
drain-source voltage
drain current
−
−
−
−
7
V
40
mA
mA
mA
IG1
IG2
Ptot
gate 1 current
±10
±10
gate 2 current
total power dissipation
BF909
see Fig.3
up to Tamb = 50 °C; note 1
up to Tamb = 40 °C; note 1
−
−
200
200
+150
150
mW
mW
°C
BF909R
Tstg
Tj
storage temperature
operating junction temperature
−65
−
°C
Note
1. Device mounted on a printed-circuit board.
MLB935
250
handbook, halfpage
P
tot
(mW)
200
150
100
BF909R
BF909
50
0
0
50
100
150
200
o
T
( C)
amb
Fig.3 Power derating curves.
1995 Apr 25
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
BF909
500
550
K/W
K/W
BF909R
Rth j-s
thermal resistance from junction to soldering point
note 2
BF909
Ts = 92 °C
Ts = 78 °C
290
360
K/W
K/W
BF909R
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
UNIT
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
6
6
V
V
V
V
V
15
1.5
1.5
1
0.5
0.5
0.3
V(F)S-G2
VG1-S(th)
VG2-S = 4 V; VDS = 5 V;
ID = 20 µA
VG2-S(th)
IDSX
gate 2-source threshold voltage
drain-source current
VG1-S = VDS = 5 V; ID = 20 µA
0.3
12
1.2
20
V
VG2-S = 4 V; VDS = 5 V;
mA
RG1 = 120 kΩ; note 1
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
−
−
50
50
nA
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
36
TYP.
43
MAX.
50
UNIT
mS
yfs
Cig1-s
Cig2-s
Cos
Crs
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
f = 1 MHz
f = 1 MHz
f = 1 MHz
−
−
−
−
−
3.6
2.3
2.3
35
2
4.3
3
pF
pF
pF
fF
3
reverse transfer capacitance f = 1 MHz
noise figure f = 800 MHz; GS = GSopt; BS = BSopt
50
2.8
F
dB
1995 Apr 25
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB937
MLB936
30
110
handbook, halfpage
handbook, halfpage
V
= 4 V
3 V 2.5 V
2 V
G2
S
I
V
D
unw
(mA)
(dBµV)
20
100
1.5 V
1 V
90
80
10
0
0
0
10
20
30
40
50
0.4
0.8
1.2
1.6
V
2.0
(V)
gain reduction (dB)
G1
S
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
unw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
f
VDS = 5 V.
Fig.4 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.18.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
MLB938
MLB939
200
30
handbook, halfpage
handbook, halfpage
V
= 1.4 V
S
G1
I
V
= 4 V
S
G1
(µA)
G2
I
D
(mA)
1.3 V
1.2 V
1.1 V
150
3.5 V
20
3 V
100
50
0
2.5 V
2 V
1.0 V
0.9 V
10
0
0
0
1
2
3
2
4
6
8
10
(V)
V
(V)
S
G1
V
DS
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
Fig.6 Output characteristics; typical values.
1995 Apr 25
5
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB941
MLB940
60
25
handbook, halfpage
handbook, halfpage
I
D
V
= 4 V
S
G2
y
(mA)
20
fs
(mS)
3.5 V
3 V
40
15
10
5
2.5 V
20
2 V
0
0
0
0
10
20
30
20
40
60
I
(µA)
I
(mA)
G1
D
VDS = 5 V.
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a
Fig.9 Drain current as a function of gate 1 current;
typical values.
function of drain current; typical values.
MLB942
MLB943
16
30
handbook, halfpage
handbook, halfpage
I
D
R
= 47 kΩ 68 kΩ
I
G1
D
(mA)
82 kΩ
(mA)
12
100 kΩ
20
120 kΩ
150 kΩ
180 kΩ
220 kΩ
8
4
10
0
0
0
2
4
6
0
2
4
6
8
V
(V)
GG
V
= V
(V)
DS
GG
VDS = 5 V; VG2-S = 4 V.
VG2-S = 4 V.
RG1 connected to VGG; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); Tj = 25 °C.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.18.
Fig.11 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.18.
1995 Apr 25
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB944
MLB945
20
40
handbook, halfpage
handbook, halfpage
I
V
= 5 V
D
GG
I
G1
(µA)
(mA)
16
V
= 5 V
GG
4.5 V
30
4 V
4.5 V
3.5 V
3 V
4 V
12
8
3.5 V
3 V
20
10
4
0
0
0
0
2
4
6
2
4
6
V
(V)
S
V
(V)
S
G2
G2
VDS = 5 V; Tj = 25 °C.
G1 = 120 kΩ (connected to VGG).
VDS = 5 V; Tj = 25 °C.
R
RG1 = 120 kΩ (connected to VGG).
Fig.12 Drain current as a function of gate 2 voltage;
typical values; see Fig.18.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.18.
MLB947
MLB946
3
3
2
10
10
rs
10
handbook, halfpage
y
y
ϕ
is
(mS)
rs
(deg)
(µS)
ϕ
rs
rs
2
2
10
10
10
b
is
y
10
10
1
1
g
is
1
1
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
ID = 15 mA; Tamb = 25 °C.
Fig.14 Input admittance as a function of frequency;
typical values.
Fig.15 Reverse transfer admittance and phase as
a function of frequency; typical values.
1995 Apr 25
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB949
MLB948
2
2
10
10
fs
10
handbook, halfpage
y
os
y
fs
fs
ϕ
y
(mS)
b
fs
os
(deg)
(mS)
1
ϕ
g
10
10
os
1
10
2
1
10
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.17 Output admittance as a function of
frequency; typical values.
V
AGC
R1
10 kΩ
C1
4.7 nF
C3 12 pF
R3
10 Ω
R
L
L1
C2
DUT
50 Ω
≈350 nH
C4
C5
2.2
pF
4.7 nF
R
R2
GEN
R
G1
50 Ω
50 Ω
4.7 nF
V
I
V
MLD151
GG
V
DS
Fig.18 Cross-modulation test set-up.
8
1995 Apr 25
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
Table 1 Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
s11
s21
s12
s22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
50
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
−6.4
−12.6
−25.0
−36.5
−47.6
−57.4
−66.6
−74.6
−82.2
−89.3
−95.6
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
172.3
164.9
150.8
137.3
123.8
111.7
101.0
90.3
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
114.9
138.7
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
−3.2
−6.4
100
200
300
400
500
600
700
800
900
1000
−12.6
−18.6
−24.2
−29.6
−34.8
−39.8
−44.6
−49.5
−54.6
79.9
69.5
59.5
Table 2 Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
Γopt
f
Fmin
(dB)
rn
0.581
(MHz)
(ratio)
(deg)
67.71
800
2.00
0.603
1995 Apr 25
9
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
PACKAGE OUTLINES
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A
B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.19 SOT143.
3.0
2.8
B
0.150
0.090
1.9
A
M
0.2
0.40
0.25
A
3
4
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
2
1
1.1
max
0.48
0.38
0.88
0.78
o
MBC844
30
max
1.7
B
0.1 M
TOP VIEW
Dimensions in mm.
Fig.20 SOT143R.
10
1995 Apr 25
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 25
11
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