BF959 [INFINEON]
NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages); NPN硅RF晶体管（对于SAW滤波器驱动器应用中的电视调谐器的线性宽带甚高频放大级）
| 型号： | BF959 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon RF Transistor
BF 959
● For SAW filter driver applications
in TV tuners
● For linear broadband VHF amplifier
stages
● For oscillator applications
Package1)
TO-92
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BF 959
–
Q62702-F640
C
E
B
Maximum Ratings
Parameter
Symbol
Values
20
Unit
Collector-emitter voltage
VCE0
VCES
VCB0
VEB0
V
Collector-emitter reverse voltage
Collector-base voltage
30
30
Emitter-base voltage
3
Peak collector current
I
CM
BM
100
30
mA
Peak base current
I
Total power dissipation, TA ≤ 25 ˚C
P
tot
500
mW
˚C
VCE ≤ 15 V
Junction temperature
Tj
150
Storage temperature range
Tstg
– 55 … + 150
Thermal Resistance
Junction - ambient
R
th JA
≤ 250
K/W
1)
For detailed information see chapter Package Outlines.
1
BF 959
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
(BR) CE0
(BR) CB0
(BR) EB0
20
30
3
–
–
–
–
–
V
IC
= 1 mA
Collector-base breakdown voltage
= 10 µA
Emitter-base breakdown voltage
= 10 µA
–
IC
–
IE
Collector cutoff current
V = 20 V
ICB0
–
100
nA
–
DC current gain, VCE = 10 V
h
FE
I
C
= 5 mA
= 20 mA
35
40
–
85
–
–
IC
Base-emitter voltage
= 20 mA, VCE = 10 V
V
V
V
BE
–
–
–
0.75
–
V
IC
Collector-emitter saturation voltage
= 30 mA, I = 2 mA
CE sat
BE sat
–
1
IC
B
Base-emitter saturation voltage
= 30 mA, I = 2 mA
–
0.95
IC
B
AC Characteristics
Transition frequency
f
T
MHz
pF
I
C
= 20 mA, VCE = 10 V, f = 100 MHz
= 30 mA, VCE = 5 V
700
600
1100
–
–
–
IC
Output capacitance
= 0, f = 1 MHz
C
C
F
obo
–
0.9
–
V
CB = 10 V, I
E
Collector-base capacitance
cb
–
0.75
–
VCE = 10 V, VBE = 0, f = 1 MHz
Noise figure
dB
V
CE = 10 V, f = 200 MHz, R = 60 Ω
S
I
C
= 5 mA
= 20 mA
–
–
3
4
–
–
IC
Output conductance
= 20 mA, VCE = 10 V, f = 35 MHz
g
22e
–
0.06
–
mS
IC
Semiconductor Group
2
BF 959
Total power dissipation Ptot = f (T
A
)
Transition frequency f
T
= f (I )
C
f = 100 MHz
Collector-base capacitance Ccb = f (VCB
)
f= 1 MHz
Semiconductor Group
3
相关型号：
BF959RLRF
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
MOTOROLA
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