935186260118 [NXP]
IC HCT SERIES, TRIPLE 3-INPUT NAND GATE, PDSO14, SSOP-14, Gate;型号: | 935186260118 |
厂家: | NXP |
描述: | IC HCT SERIES, TRIPLE 3-INPUT NAND GATE, PDSO14, SSOP-14, Gate 栅 输入元件 光电二极管 逻辑集成电路 |
文件: | 总5页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications
• The IC06 74HC/HCT/HCU/HCMOS Logic Package Information
• The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines
74HC/HCT10
Triple 3-input NAND gate
December 1990
Product specification
File under Integrated Circuits, IC06
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74HC/HCT10
FEATURES
• Output capability: standard
• ICC category: SSI
GENERAL DESCRIPTION
The 74HC/HCT10 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT10 provide the 3-input NAND function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
UNIT
ns
HC
HCT
tPHL/ tPLH
CI
propagation delay nA, nB, nC to nY
input capacitance
CL = 15 pF; VCC = 5 V
9
11
3.5
12
3.5
14
pF
pF
CPD
power dissipation capacitance per gate notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fO) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in V
∑ (CL × VCC2 × fo) = sum of outputs
2. For HC the condition is VI = GND to VCC
For HCT the condition is VI = GND to VCC − 1.5 V.
ORDERING INFORMATION
See “74HC/HCT/HCU/HCMOS Logic Package Information”.
December 1990
2
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74HC/HCT10
PIN DESCRIPTION
PIN NO.
1, 3, 9
2, 4, 10
13, 5, 11
12, 6, 8
7
SYMBOL
1A to 3A
1B to 3B
1C to 3C
1Y to 3Y
GND
NAME AND FUNCTION
data inputs
data inputs
data inputs
data outputs
ground (0 V)
14
VCC
positive supply voltage
Fig.3 IEC logic symbol.
Fig.1 Pin configuration.
Fig.2 Logic symbol.
FUNCTION TABLE
INPUTS
nB
OUTPUT
nY
nA
nC
L
L
L
L
L
L
L
H
L
H
H
H
H
H
H
H
H
H
H
H
L
L
L
H
L
H
H
H
L
H
H
H
Notes
1. H = HIGH voltage level
L = LOW voltage level
Fig.4 Functional diagram.
Fig.5 Logic diagram (one gate).
December 1990
3
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74HC/HCT10
DC CHARACTERISTICS FOR 74HC
For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”.
Output capability: standard
ICC category: SSI
AC CHARACTERISTICS FOR 74HC
GND = 0 V; tr = tf = 6 ns; CL = 50 pF
Tamb (°C)
TEST CONDITIONS
74HC
SYMBOL PARAMETER
UNIT
WAVEFORMS
VCC
(V)
+25
−40 to + 85 −40 to + 125
min. typ. max. min. max. min. max.
tPHL/ tPLH propagation delay
nA, nB, nC to nY
30
11
9
95
19
16
75
15
13
120
24
20
95
19
16
145
29
2.0
ns
4.5
6.0
2.0
4.5
6.0
Fig.6
Fig.6
25
t
THL/ tTLH output transition time
19
7
110
22
ns
6
19
December 1990
4
Philips Semiconductors
Product specification
Triple 3-input NAND gate
74HC/HCT10
DC CHARACTERISTICS FOR 74HCT
For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”.
Output capability: standard
ICC category: SSI
Note to HCT types
The value of additional quiescent supply current (∆ICC) for a unit load of 1 is given in the family specifications.
To determine ∆ICC per input, multiply this value by the unit load coefficient shown in the table below.
INPUT
UNIT LOAD COEFFICIENT
nA, nB, nC
1.5
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; tr = tf = 6 ns; CL = 50 pF
Tamb (°C)
TEST CONDITIONS
74HCT
SYMBOL PARAMETER
UNIT
WAVEFORMS
VCC
(V)
+ 25
−40 to + 85 −40 to +125
min. typ. max. min. max. min. max.
tPHL/ tPLH propagation delay
nA, nB, nC to nY
14
24
30
36
ns
ns
4.5
4.5
Fig.6
Fig.6
output transition time
tTHL/ tTLH
7
15
19
22
AC WAVEFORMS
(1) HC : VM = 50%; VI = GND to VCC
.
HCT: VM = 1.3 V; VI = GND to 3 V.
Fig.6 Waveforms showing the input (nA, nB, nC) to output (nY) propagation delays and the output transition times.
PACKAGE OUTLINES
See “74HC/HCT/HCU/HCMOS Logic Package Outlines”.
December 1990
5
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