934055127115 [NXP]
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 934055127115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总19页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA144E series
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
Product specification
2003 Apr 10
Supersedes data of 1999 Apr 20
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
FEATURES
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
PARAMETER
TYP. MAX. UNIT
• Simplified circuit design
VCEO
collector-emitter
voltage
−
−50
V
• Reduction of component count
• Reduced pick and place costs.
IO
output current (DC)
bias resistor
−
−100 mA
R1
R2
47
47
−
−
kΩ
kΩ
bias resistor
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING CODE
NPN COMPLEMENT
PHILIPS
EIAJ
PDTA144EE
PDTA144EEF
PDTA144EK
PDTA144EM
PDTA144ES
PDTA144ET
PDTA144EU
SOT416
SOT490
SC-75
SC-89
SC-59
SC-101
SC-43
−
07
07
PDTC144EE
PDTC144EEF
PDTC144EK
PDTC144EM
PDTC144ES
PDTC144ET
PDTC144EU
SOT346
07
SOT883
DR
SOT54 (TO-92)
SOT23
TA144E
*07(1)
*07(1)
SOT323
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2003 Apr 10
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
DESCRIPTION
PDTA144ES
1
2
3
base
collector
emitter
handbook, halfpage
2
3
R1
1
2
3
1
R2
MAM338
PDTA144EE
PDTA144EEF
PDTA144EK
PDTA144ET
PDTA144EU
1
2
3
base
emitter
collector
handbook, halfpage
3
3
2
R1
R2
1
1
2
Top view
MDB271
PDTA144EM
1
2
3
base
emitter
collector
handbook, halfpage
3
2
R1
2
1
3
R2
1
Bottom view
MDB267
2003 Apr 10
3
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
−
−
−
V
V
V
open base
−50
−10
open collector
positive
−
−
−
−
+10
V
V
negative
−40
IO
output current (DC)
peak collector current
total power dissipation
SOT54
−100
−100
mA
mA
ICM
Ptot
T
amb ≤ 25 °C
note 1
−
−
−
−
−
−
−
500
250
250
200
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
SOT23
note 1
SOT346
note 1
SOT323
note 1
SOT416
note 1
SOT490
notes 1 and 2
notes 2 and 3
SOT883
Tstg
Tj
storage temperature
junction temperature
operating ambient temperature
−65
−
°C
Tamb
−65
°C
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
SOT54
note 1
250
500
500
625
833
500
500
K/W
K/W
K/W
K/W
K/W
K/W
K/W
SOT23
note 1
SOT346
SOT323
SOT416
SOT490
SOT883
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
2003 Apr 10
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −50 V; IE = 0
VCE = −30 V; IB = 0
CE = −30 V; IB = 0; Tj = 150 °C
MIN.
TYP. MAX. UNIT
− −100 nA
ICBO
ICEO
collector-base cut-off current
collector-emitter cut-off current
−
−
−
−1
µA
µA
µA
V
−
−
−50
−90
−
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = −5 V; IC = 0
−
−
VCE = −5 V; IC = −5 mA
80
−
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−150 mV
input-off voltage
input-on voltage
input resistor
IC = −100 µA; VCE = −5 V
IC = −2 mA; VCE = −0.3 V
−
−1.2
−1.6
47
−0.8
−
V
−3
33
V
61
kΩ
R2
-------
R1
resistor ratio
0.8
1
1.2
3
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
pF
2003 Apr 10
5
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
2003 Apr 10
6
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
Plastic surface mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-10-23
SOT490
SC-89
2003 Apr 10
7
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
Plastic surface mounted package; 3 leads
SOT346
E
A
D
B
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
p
w M
B
1
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
A
p
1
p
1
E
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
1.9
0.95
0.2
0.2
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
98-07-17
SOT346
TO-236
SC-59
2003 Apr 10
8
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2003 Apr 10
9
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
2003 Apr 10
10
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Apr 10
11
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
2003 Apr 10
12
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 10
13
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
NOTES
2003 Apr 10
14
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
PDTA144E series
NOTES
2003 Apr 10
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/06/pp16
Date of release: 2003 Apr 10
Document order number: 9397 750 11046
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PDTA144E series;
PNP resistor-
equipped
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kOhm, R2 = 47
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PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details).
Models
•
•
Features
SoC solutions
●
●
●
●
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
Applications
●
●
●
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
AN10116_2: Breakthrough In Small Signal - Low V
(BISS) Transistors and their Applications (date 05-Aug-02)
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PDTA144E series PNP resistor-
equipped
4/10/2003
Product specification 16
84
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transistors; R1 = 47
kOhm, R2 = 47
kOhm
Parametrics
Type number Package hFE hFE POLARITY I
VCEO Ptot
max(V) max(mW) RATIO
RES
Complement Input
Resistor(kOhm)
O
min max
max(mA)
SOT416
(EMT3,
SMPAK)
PDTA144EE
PDTA144EEF
PDTA144EK
68 >68 PNP
100
100
100
50
50
50
150
250
250
1
1
1
PDTC144EE 47
PDTC144EEF 47
PDTC144EK 47
SOT490
(SC-89)
80 >80 PNP
68 >68 PNP
SOT346
(SMT3,
MPAK)
SOT54
(SPT, E-
1)
PDTA144ES
PDTA144ET
PDTA144EU
68 >68 PNP
68 >68 PNP
68 >68 PNP
100
100
100
50
50
50
500
250
200
1
1
1
PDTC144ES 47
PDTC144ET 47
PDTC144EU 47
SOT23
(SST3)
SOT323
(UMT3,
CMPAK)
Products, packages, availability and ordering
Type number North
Ordering code
Marking/Packing
Package Device status Buy online
Discretes packing
American type (12NC)
number
info
SOT416
PDTA144EE
T/R
Standard Marking *
Reel Pack, SMD
PDTA144EE
9340 515 10115
Full production
Full production
(EMT3;
SMPAK)
Standard Marking *
9340 515 10185 Multi-Reel Pack,
SMD, Pitch 4mm
SOT416
PDTA144EE
/T4
(EMT3;
SMPAK)
SOT490
(SC-89)
PDTA144EEF
T/R
Standard Marking *
9340 551 27115
PDTA144EEF
PDTA144EK
Full production
Full production
Reel Pack, SMD
SOT346
PDTA144EK
T/R
Standard Marking *
9340 367 80115
(SMT3;
MPAK)
Reel Pack, SMD
Standard Marking *
9340 367 80135 Reel Pack, SMD,
Large
SOT346
PDTA144EK
/T3
Full production
(SMT3;
MPAK)
-
Standard Marking *
9340 571 69315 Reel Pack, SMD,
Pitch 2mm
SOT883
PDTA144EM
PDTA144ES
PDTA144ET
Development
Full production
Full production
SOT54
PDTA144ES
AMO
Standard Marking *
9340 473 50126
-
-
(SPT; E-1)
Ammopack, Radial
Standard Marking *
9340 310 80215 Reel Pack, SMD,
Low Profile
SOT23
(SST3)
PDTA144ET
T/R
SOT323
PDTA144EU
T/R
Standard Marking *
9340 441 30115
PDTA144EU
Full production
(UMT3;
CMPAK)
Reel Pack, SMD
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tree(s), relevant selection guides and products from the same functional category.
Support & tools
Spice model of PDTA144EEF
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Spice model of PDTA144EK
Spice model of PDTA144ET
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相关型号：
934055128115
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
NXP
934055145115
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
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934055146115
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
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934055148115
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
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934055149115
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
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934055150115
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
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934055156412
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934055198114
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
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934055207115
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT3, SC-70, CMPAK-3, BIP General Purpose Small Signal
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934055221118
TRANSISTOR 69 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power
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934055222118
TRANSISTOR 48 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET General Purpose Power
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