934055198114 [NXP]
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power;
| 型号： | 934055198114 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总14页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BLS3135-50
Microwave power transistor
Product specification
2003 Apr 15
Supersedes data of 1999 Aug 16
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
FEATURES
PINNING - SOT422A
PIN
• Suitable for short and medium pulse applications
DESCRIPTION
• Internal input and output matching networks for an easy
circuit design
1
2
3
collector
emitter
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
handbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz band.
3
3
2
MBK051
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
f
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Pulsed, class-C
3.1 to 3.5
40
50
typ. 8
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Apr 15
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
75
UNIT
VCBO
VCES
VEBO
ICM
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
RBE = 0
−
−
−
−
−
V
75
V
open collector
2
V
peak collector current
total power dissipation
storage temperature
tp ≤ 100 µs; δ ≤ 10%
6
A
Ptot
tp = 100 µs; δ = 10%; Tmb = 25 °C
80
W
°C
°C
°C
Tstg
Tj
−65
−
+200
200
235
operating junction temperature
soldering temperature
Tsld
up to 0.2 mm from ceramic cap;
−
t ≤ 10 s
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
tp = 100 µs; δ = 10%; note 1
tp = 300 µs; δ = 10%; note 1
0.71
0.99
K/W
K/W
Zth j-h
thermal impedance from junction to heatsink
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 µm
spot size at hotspot.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
75
MAX.
UNIT
V(BR)CBO
V(BR)CES
ICBO
collector-base breakdown voltage
IC = 15 mA; open emitter
−
V
collector-emitter breakdown voltage IC = 15 mA; VBE = 0
75
−
−
V
collector leakage current
collector leakage current
emitter leakage current
DC current gain
VCB = 40 V; IE = 0
VCE = 40 V; VBE = 0
VEB = 1.5 V; IC = 0
VCB = 5 V; IC = 1.5 A
1.5
3
mA
mA
mA
ICES
−
IEBO
−
0.3
−
hFE
40
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Class-C; tp = 100 µs; δ = 10%
3.1 to 3.5
40
≥50
≥7
≥35
typ. 55
typ. 8
typ. 40
2003 Apr 15
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
Typical impedance
FREQUENCY
(GHZ)
ZS
(Ω)
ZL
(Ω)
3.1
3.2
3.3
3.4
3.5
23.5 − j 5.6
23.6 − j 4.3
23.8 − j 2.9
24.3 − j 1.6
24.9 − j 0.3
7.8 − j 3.7
7.3 − j 4.1
6.6 − j 4.3
5.8 − j 4.2
5.1 − j 4.1
2003 Apr 15
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
MCD758
MCD759
80
10
handbook, halfpage
handbook, halfpage
G
p
P
L
(W)
(dB)
8
(2)
(1)
(3)
60
6
4
(1)
(2)
(3)
40
20
0
2
0
(3)
−2
0
2
4
6
8
10
(W)
0
20
40
60
80
P
(W)
P
L
D
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.5 GHz.
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
(3) f = 3.1 GHz.
Fig.2 load power as a function of drive
power; typical values.
Fig.3 Power gain as a function of load
power; typical values.
MCD760
MCD761
50
10
20
Return
Losses
(dB)
handbook, halfpage
handbook, halfpage
η
G
C
(%)
p
(dB)
8
G
p
40
16
Return
Losses
(2)
(1)
(3)
30
20
6
4
12
8
10
2
0
4
0
0
0
20
40
60
80
3.0
3.1
3.2
3.3
3.4
3.5
f (GHz)
P
(W)
L
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.
(3) f = 3.1 GHz.
Fig.4 Collector efficiency as a function of load
power; typical values.
Fig.5 Power gain and input return losses as
functions of frequency; typical values.
2003 Apr 15
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
30
30
40
C1
input
output
C2
MCD762
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = C2 = ATC 100A 5.1 pF
Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit.
2003 Apr 15
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT422A
D
A
F
3
D
1
U
B
1
q
C
c
1
L
p
U
E
E
H
2
1
w
M
M
M
B
A
1
A
L
2
Q
w
b
M
M
C
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
1
1
1
2
1
5.21
4.95
0.13
0.08
5.72
4.83
9.93 10.29 8.76 10.29 1.58
9.68 10.03 8.51 10.03 1.47
19.18 4.52
17.65 3.74
3.43
3.18
3.35
2.92
22.99 9.91
22.73 9.65
mm
16.51
0.65
0.25
0.01
0.76
0.03
0.205 0.005
0.195 0.003
0.225
0.190
0.391 0.405 0.345 0.405 0.062 0.755 0.178 0.135 0.132
0.381 0.395 0.335 0.395 0.058 0.695 0.147 0.125 0.115
0.905 0.390
0.895 0.380
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT422A
99-03-29
2003 Apr 15
7
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 15
8
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
NOTES
2003 Apr 15
9
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
NOTES
2003 Apr 15
10
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
NOTES
2003 Apr 15
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp12
Date of release: 2003 Apr 15
Document order number: 9397 750 11151
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Microwave power
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NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a
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●
●
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●
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Suitable for short and medium pulse applications
Internal input and output matching networks for an easy circuit design
Emitter ballasting resistors improve ruggedness
Gold metallization ensures excellent reliability
Interdigitated emitter-base structure provides high emitter efficiency
Multicell geometry improves power sharing and reduces thermal resistance.
Models
•
•
SoC solutions
Applications
●
Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band.
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release date
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BLS3135-50 Microwave
4/3/2015
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