934031940115 [NXP]
DIODE 2.1 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, Rectifier Diode;
| 型号： | 934031940115 |
| 厂家： | 
NXP |
| 描述： | DIODE 2.1 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, Rectifier Diode |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D168
BYG50 series
Controlled avalanche rectifiers
1996 May 24
Preliminary specification
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
FEATURES
DESCRIPTION
• Glass passivated
DO-214AC; SOD106 surface
mountable package with glass
passivated chip.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
cathode
band
handbook, 4 columns
• Guaranteed avalanche energy
absorption capability
k
a
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
MSA474
Top view
Side view
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG50D
−
−
−
−
−
200
400
V
V
V
V
V
BYG50G
BYG50J
600
BYG50K
800
BYG50M
1000
VR
continuous reverse voltage
BYG50D
−
−
−
−
−
−
200
400
600
800
1000
2.1
V
V
V
V
V
A
BYG50G
BYG50J
BYG50K
BYG50M
IF(AV)
average forward current
averaged over any 20 ms
period; Ttp = 100 °C; see Fig.2
−
−
1.0
0.7
A
A
averaged over any 20 ms
period; Al2O3 PCB mounting (see
Fig.7); Tamb = 60 °C; see Fig.3
averaged over any 20 ms
period; epoxy PCB mounting
(see Fig.7); Tamb = 60 °C;
see Fig.3
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
30
A
1996 May 24
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
SYMBOL
PARAMETER
non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to
energy surge; inductive load switched off
BYG50D to J
CONDITIONS
MIN.
MAX.
UNIT
ERSM
−
10
7
mJ
BYG50K and M
storage temperature
junction temperature
−
mJ
°C
°C
Tstg
Tj
−65
−65
+175
+175
see Fig.4
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
0.85
1.00
UNIT
VF
forward voltage
IF = 1 A; Tj = Tj max; see Fig.5
IF = 1 A; see Fig.5
IR = 0.1 mA
−
−
−
−
V
V
V(BR)R
reverse avalanche
breakdown voltage
BYG50D
BYG50G
300
500
700
900
1100
−
−
−
−
−
−
−
−
2
−
V
−
V
BYG50J
−
V
BYG50K
−
−
V
BYG50M
V
IR
reverse current
VR = VRRMmax; see Fig.6
1
µA
µA
µs
VR = VRRMmax; Tj = 165 °C; see Fig.6
−
100
−
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
3
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
GRAPHICAL DATA
MBH396
MBH397
4
2.0
handbook, halfpage
handbook, halfpage
I
F(AV)
(A)
I
F(AV)
(A)
1.6
3
1.2
0.8
0.4
2
1
0
0
0
0
40
80
120
160
T
200
(°C)
40
80
120
160
T
200
(°C)
tp
amb
VR = VRRMmax; δ = 0.5; a = 1.57.
Device mounted as shown in Fig.7
VR = VRRMmax; δ = 0.5; a = 1.57.
Solid line: Al2O3 PCB; dotted line: epoxy PCB.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGD483
MBH398
10
200
handbook, halfpage
handbook, halfpage
I
F
T
j
(A)
(°C)
8
160
6
4
2
0
120
80
D
G
J
K
M
40
0
0
0.4
0.8
1.2
1.6
2.0
0
400
800
1200
V
(V)
R
V (V)
F
Device mounted as shown in Fig.7.
Solid line: Al2O3 PCB.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Dotted line: epoxy PCB.
Fig.4 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.5 Forward current as a function of forward
voltage; maximum values.
1996 May 24
4
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
MGC739
3
10
handbook, halfpage
50
I
R
(µA)
2
10
4.5
50
10
2.5
1
0
1.25
40
80
120
160
T ( C)
200
MSB213
o
j
VR = VRMMmax
.
Dimensions in mm.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
Fig.7 Printed-circuit board for surface mounting.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
5
1996 May 24
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYG50 series
PACKAGE OUTLINE
5.5
5.1
4.5
4.3
2.3
2.0
0.05
0.2
3.3
2.7
MSA414
2.8 1.6
2.4 1.4
Dimensions in mm.
Fig.9 SOD106.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24
6
相关型号：
934032160215
DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 3 PIN, Signal Diode
NXP
934032180113
DIODE 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
934032180133
DIODE 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
©2020 ICPDF网 联系我们和版权申明