934032210115 [NXP]
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN;
| 型号： | 934032210115 |
| 厂家： | 
NXP |
| 描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT70
UHF power transistor
1996 Feb 06
Product specification
Philips Semiconductors
Product specification
UHF power transistor
BLT70
FEATURES
• Very high efficiency
• Low supply voltage.
handbook, halfpage
4
APPLICATIONS
• Hand-held radio equipment in common emitter class-AB
c
operation in the 900 MHz communication band.
b
DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
1
2
3
MAM043 - 1
PINNING - SOT223H
Top view
PIN
SYMBOL
DESCRIPTION
emitter
1
2
3
4
e
b
e
c
base
emitter
collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).
f
VCE
(V)
PL
(mW)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
CW, class-AB
900
4.8
600
≥6
≥60
1996 Feb 06
2
Philips Semiconductors
Product specification
UHF power transistor
BLT70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
16
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
V
V
V
open base
8
open collector
2.5
250
2.1
+150
175
collector current (DC)
total power dissipation
storage temperature
mA
W
Ptot
Tstg
Tj
Ts = 60 °C; note 1
−65
°C
°C
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Ptot = 2.1 W; Ts = 60 °C; note 1
VALUE
55
UNIT
Rth j-s
thermal resistance from junction to
soldering point
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MGD197
3
handbook, halfpage
P
tot
(W)
2
1
0
0
100
200
o
T
( C)
s
Fig.2 DC SOAR.
1996 Feb 06
3
Philips Semiconductors
Product specification
UHF power transistor
BLT70
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
16
MAX.
UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 0.5 mA
−
−
−
V
V
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA
8
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 0.2 mA
VCE = 7 V; VBE = 0
2.5
−
ICES
hFE
Cc
collector leakage current
DC current gain
0.1
−
mA
VCE = 4.8 V; IC = 100 mA
VCB = 4.8 V; IE = ie = 0; f = 1 MHz
VCE = 4.8 V; IC = 0; f = 1 MHz
25
−
collector capacitance
feedback capacitance
3.5
2.5
pF
pF
Cre
−
MGD198
MGD199
100
4
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
80
60
40
20
3
2
1
0
0
0
100
200
300
0
4
8
12
16
I
(mA)
C
V
(V)
CB
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
VCE = 4.8 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector capacitance as a function of
collector-base voltage; typical values.
1996 Feb 06
4
Philips Semiconductors
Product specification
UHF power transistor
BLT70
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).
f
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(MHz)
≥6
≥60
CW, class-AB
900
4.8
0.01
0.6
typ. 8.1
typ. 73
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 6.5 V; PL = 0.5 W; Ts ≤ 60 °C.
MGD200
MGD201
100
10
1.0
handbook, halfpage
handbook, halfpage
η
G
P
G
C
p
L
p
(%)
(dB)
8
(W)
0.8
80
η
C
60
40
20
0
6
4
0.6
0.4
2
0.2
0
0
0
0
0.2
0.4
0.6
0.8
1.0
100
200
P
(mW)
IN
P
(W)
L
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C.
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts ≤ 60 °C.
Fig.5 Power gain and collector efficiency as
functions of load power; typical values.
Fig.6 Load power as a function of input
power; typical values.
1996 Feb 06
5
Philips Semiconductors
Product specification
UHF power transistor
BLT70
Test circuit information
+V
bias
+V
S
C11
L8
R2
R3
R1
T1
C8
C9
C6
L3
L7
DUT
C2
C3
C4
C5
C1
C14
L1
L2
L4
L5
L6
L9
L10
output
input
50 Ω
50 Ω
C7
C10
C12
C13
MGD205
VS = Vbias = typ. 4.8 V.
Fig.7 Common emitter test circuit for class-AB operation at 900 MHz.
1996 Feb 06
6
Philips Semiconductors
Product specification
UHF power transistor
BLT70
List of components used in test circuit (see Figs 7 and 8)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C6, C9, C14
multilayer ceramic chip capacitor; 100 pF
note 1
C2
C4
multilayer ceramic chip capacitor; 1 pF
note 1
multilayer ceramic chip capacitor; 2.4 pF
note 1
C3, C5, C12, C13 film dielectric trimmer
1.4 to 5.5 pF
2222 809 09004
C7
multilayer ceramic chip capacitor; 5.1 pF
note 1
C8
tantalum capacitor
1 µF, 35 V
C10
multilayer ceramic chip capacitor; 2.7 pF
note 1
C11
L1
tantalum capacitor
stripline; note 2
100 µF, 20 V
50 Ω
length 29.1 mm
width 5 mm
L2
L3
L4
L5
L6
L7
L8
L9
L10
stripline; note 2
50 Ω
length 21 mm
width 5 mm
8 turns enamelled 0.8 mm copper 216 nH
wire
length 7 mm
internal dia. 4.5 mm
stripline; note 2
stripline; note 2
stripline; note 2
50 Ω
50 Ω
50 Ω
length 1 mm
width 5 mm
length 3 mm
width 2.5 mm
length 12 mm
width 5 mm
8 turns enamelled 0.8 mm copper 105 nH
wire
length 7 mm
internal dia. 3.4 mm
grade 3B Ferroxcube wideband
HF choke
4132 020 36640
stripline; note 2
50 Ω
50 Ω
length 12 mm
width 5 mm
stripline; note 2
length 28 mm
width 5 mm
R1
R2
R3
T1
metal film resistor
metal film resistor
metal film resistor
NPN transistor
0.1 W, 15 Ω
0.1 W, 390 Ω
0.6 W, 10 Ω
BD139
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr = 2.2); thickness 1⁄16";
thickness of the copper sheet 2 × 35 µm.
1996 Feb 06
7
Philips Semiconductors
Product specification
UHF power transistor
BLT70
139
79
+V
S
+V
bias
L8
R2
C8
Copper foil
C2
C11
T1
R1
L3
C9
L7
L9
R3
C6
C4
L4
L5
C1
L1
C14
C13
L6
L10
C12
L2
C3
C5
C10
C7
Plated through holes
BLT70
MGD206
Dimensions in mm.
The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7.
1996 Feb 06
8
Philips Semiconductors
Product specification
UHF power transistor
BLT70
MGD203
MGD202
40
L
(Ω)
30
20
handbook, halfpage
handbook, halfpage
Z
Z
i
(Ω)
R
L
16
r
i
20
10
12
8
x
i
0
X
L
4
−10
−20
800
0
800
850
900
950
1000
f (MHz)
850
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C.
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C.
Fig.9 Input impedance as a function of frequency
(series components); typical values.
Fig.10 Load impedance as a function of frequency
(series components); typical values.
MGD204
12
handbook, halfpage
G
p
(dB)
8
handbook, halfpage
Z
i
4
0
Z
MBA451
L
800
850
900
950
1000
f (MHz)
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts ≤ 60 °C.
Fig.11 Power gain as a function of
frequency; typical values.
Fig.12 Definition of transistor impedance.
1996 Feb 06
9
Philips Semiconductors
Product specification
UHF power transistor
BLT70
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.13 SOT223H.
1996 Feb 06
10
Philips Semiconductors
Product specification
UHF power transistor
BLT70
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Feb 06
11
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