74AHC3G04DP [NXP]
INVERTER; 逆变器型号: | 74AHC3G04DP |
厂家: | NXP |
描述: | INVERTER |
文件: | 总16页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74AHC3G04; 74AHCT3G04
Inverter
Product specification
2003 Nov 06
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
FEATURES
DESCRIPTION
• Symmetrical output impedance
• High noise immunity
The 74AHC3G04/74AHCT3G04 are high-speed Si-gate
CMOS devices.
The 74AHC3G04/74AHCT3G04 provides three inverting
buffer.
• ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
• Low power dissipation
• Balanced propagation delays
• SOT505-2 and SOT765-1 package
• Specified from −40 to +85 °C and −40 to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
UNIT
ns
74AHC3G04 74AHCT3G04
tPHL/tPLH propagation delay input A to output Y CL = 15 pF; VCC = 5 V
3.1
1.5
9
3.4
1.5
10
CI
input capacitance
pF
pF
CPD
power dissipation capacitance
CL = 50 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
∑(CL × VCC2 × fo) = sum of outputs.
2. The condition is VI = GND to VCC
.
FUNCTION TABLE
See note 1.
INPUT
OUTPUT
nA
L
nY
H
H
L
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2003 Nov 06
2
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
ORDERING AND PACKAGE INFORMATION
PACKAGES
PACKAGE MATERIAL
TYPE NUMBER
TEMPERATURE
PINS
CODE
MARKING
RANGE
74AHC3G04DP
74AHCT3G04DP
74AHC3G04DC
74AHCT3G04DC
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
8
8
8
8
TSSOP8
TSSOP8
VSSOP8
VSSOP8
plastic
plastic
plastic
plastic
SOT505-2
SOT505-2
SOT765-1
SOT765-1
A04
C04
A04
C04
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
1A
3Y
2A
data input
data output
data input
GND
2Y
ground (0 V)
data output
data input
3A
1Y
data output
supply voltage
VCC
handbook, halfpage
handbook, halfpage
1
3
6
1A
2A
3A
1Y
2Y
3Y
7
5
2
1A
1
2
3
4
8
7
6
5
V
CC
3Y
2A
1Y
3A
2Y
04
GND
MNA719
MNA720
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2003 Nov 06
3
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
handbook, halfpage
1
1
1
1
7
5
2
handbook, halfpage
3
6
Y
A
MNA110
MNA721
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74AHC3G04
74AHCT3G04
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0
0
5.0
−
5.5
5.5
VCC
4.5
0
5.0
−
5.5
5.5
VCC
V
V
V
VI
input voltage
VO
output voltage
0
−
0
−
Tamb
operating ambient
temperature
see DC and AC
characteristics per device
−40
+25
+125 −40
+25
+125 °C
tr, tf (∆t/∆f) input rise and fall times VCC = 3.3 ±0.3 V
CC = 5 ±0.5 V
−
−
−
−
100
20
−
−
−
−
−
ns/V
ns/V
V
20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage
−0.5 +7.0
−0.5 +7.0
V
VI
input voltage
V
IIK
IOK
IO
input diode current
output diode current
output source or sink current
VCC or GND current
storage temperature
power dissipation
VI < −0.5 V
−
−20
±20
±25
±75
mA
mA
mA
mA
−0.5 V < VO < VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V
−
−
ICC, IGND
−
Tstg
PD
−65
−
+150 °C
250 mW
Tamb = −40 to +125 °C
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2003 Nov 06
4
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
DC CHARACTERISTICS
Type 74AHC3G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNIT
OTHER
VCC (V)
Tamb = 25 °C
VIH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
1.5
−
−
−
−
−
−
−
V
V
V
V
V
V
2.1
3.85
−
−
−
VIL
LOW-level input
voltage
0.5
0.9
1.65
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
2.0
3.0
4.5
−
−
−
−
−
−
V
V
V
V
V
2.9
4.4
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
2.58
3.94
−
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
0
0
0
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.36
0.36
0.1
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
−
−
−
10
10
µA
input capacitance
−
1.5
pF
2003 Nov 06
5
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNIT
V
CC (V)
Tamb = −40 to +85 °C
VIH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
1.5
−
−
−
−
−
−
−
V
V
V
V
V
V
2.1
3.85
−
−
−
VIL
LOW-level input
voltage
0.5
0.9
1.65
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
2.9
4.4
2.48
3.8
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.44
0.44
1.0
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
−
−
−
−
10
10
µA
input capacitance
−
pF
2003 Nov 06
6
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP.
MAX. UNIT
V
CC (V)
Tamb = −40 to +125 °C
VIH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
1.5
−
−
−
−
−
−
−
V
V
V
V
V
V
2.1
3.85
−
−
−
VIL
LOW-level input
voltage
0.5
0.9
1.65
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
2.9
4.4
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
2.40
3.70
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.55
0.55
2.0
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0
5.5
−
−
−
−
40
10
µA
input capacitance
−
pF
2003 Nov 06
7
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
Type 74AHCT3G04
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
OTHER
VCC (V)
Tamb = 25 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
4.5
−
−
V
V
IO = −8.0 mA
3.94
−
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
0
−
−
−
−
0.1
V
IO = 8.0 mA
0.36
0.1
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0
µA
µA
mA
ICC
∆ICC
quiescent supply current
1.0
additional quiescent supply VI = 3.4 V; other inputs at
1.35
current per input pin
VCC or GND; IO = 0
CI
input capacitance
−
1.5
10
pF
Tamb = −40 to +85 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
3.8
−
−
−
−
V
V
IO = −8.0 mA
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
−
−
−
−
−
0.1
0.44
1.0
10
V
IO = 8.0 mA
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0
µA
µA
mA
ICC
∆ICC
quiescent supply current
additional quiescent supply VI = 3.4 V; other inputs at
1.5
current per input pin
VCC or GND; IO = 0
CI
input capacitance
−
−
−
10
pF
2003 Nov 06
8
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
VCC (V)
Tamb = −40 to +125 °C
VIH
VIL
HIGH-level input voltage
LOW-level input voltage
4.5 to 5.5
4.5 to 5.5
2.0
−
−
−
V
V
−
0.8
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
−
−
−
−
V
V
IO = −8.0 mA
3.70
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
−
−
−
−
−
0.1
0.55
2.0
40
V
IO = 8.0 mA
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0
µA
µA
mA
ICC
∆ICC
quiescent supply current
additional quiescent supply VI = 3.4 V; other inputs at
1.5
current per input pin
VCC or GND; IO = 0
CI
input capacitance
−
−
−
10
pF
2003 Nov 06
9
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
AC CHARACTERISTICS
Type 74AHC3G04
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
WAVEFORMS CL (pF)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VCC (V)
Tamb = 25 °C
tPHL/tPLH
propagation delay input nA to see Figs 5 and 6 15
output nY
3.0 to 3.6
3.3
−
−
−
−
−
−
−
−
−
7.1
−
ns
ns
ns
ns
4.3
−
4.5 to 5.5
5
5.5
−
3.1
−
50
3.0 to 3.6
3.3
10.6 ns
6.1
−
−
ns
ns
ns
4.5 to 5.5
5
7.5
−
4.5
T
amb = −40 to +85 °C
tPHL/tPLH
propagation delay input nA to see Figs 5 and 6 15
output nY
3.0 to 3.6 1.0
4.5 to 5.5 1.0
3.0 to 3.6 1.0
4.5 to 5.5 1.0
−
−
−
−
8.5
6.5
12
ns
ns
ns
ns
50
8.5
Tamb = −40 to +125 °C
tPHL/tPLH
propagation delay input nA to see Figs 5 and 6 15
output nY
3.0 to 3.6 1.0
4.5 to 5.5 1.0
3.0 to 3.6 1.0
4.5 to 5.5 1.0
−
−
−
−
11.0 ns
7.0 ns
14.5 ns
9.5 ns
50
Type 74AHCT3G04
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
WAVEFORMS CL (pF)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VCC (V)
Tamb = 25 °C
tPHL/tPLH
propagation delay input nA to see Figs 5 and 6 15
output nY
4.5 to 5.5
−
−
−
−
−
6.7
−
ns
ns
ns
ns
5
3.4
−
50
4.5 to 5.5
5
7.7
−
4.9
Tamb = −40 to +85 °C
tPHL/tPLH
propagation delay input nA to see Figs 5 and 6 15
4.5 to 5.5 1.0
4.5 to 5.5 1.0
−
−
7.5
8.5
ns
ns
output nY
50
2003 Nov 06
10
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
TEST CONDITIONS
WAVEFORMS CL (pF)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
VCC (V)
Tamb = −40 to +125 °C
tPHL/tPLH
propagation delay input nA to see Figs 5 and 6 15
4.5 to 5.5 1.0
4.5 to 5.5 1.0
−
−
8.5
ns
output nY
50
10.0 ns
AC WAVEFORMS
V
handbook, halfpage
I
V
V
M
nA input
M
GND
t
t
PHL
PLH
V
OH
90%
V
V
nY output
M
M
10%
V
OL
t
t
TLH
MNA722
THL
VI INPUT
VM
VM
TYPE
REQUIREMENTS INPUT OUTPUT
74AHC3G04
GND to VCC
50% VCC 50% VCC
1.5 V 50% VCC
74AHCT3G04
GND to 3.0 V
Fig.5 Input (nA) to output (nY) propagation delays.
2003 Nov 06
11
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
V
handbook, halfpage
CC
V
V
O
I
PULSE
GENERATOR
D.U.T.
C
L
R
T
MNA101
Definitions for test circuit:
CL = load capacitance including jig and probe capacitance (see Chapter “AC characteristics”).
RT = termination resistance should be equal to the output impedance Z0 of the pulse generator.
Fig.6 Load circuitry for switching times.
2003 Nov 06
12
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
PACKAGE OUTLINES
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.00
0.95
0.75
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
4.1
3.9
0.47
0.33
0.70
0.35
8°
0°
mm
1.1
0.25
0.65
0.5
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
2003 Nov 06
13
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.12
0.5
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
2003 Nov 06
14
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
DATA SHEET STATUS
DATA SHEET
LEVEL
PRODUCT
STATUS(2)(3)
DEFINITION
STATUS(1)
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
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Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
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reserves the right to make changes in the products -
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Application information
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described herein for any of these products are for
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no representation or warranty that such applications will be
suitable for the specified use without further testing or
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2003 Nov 06
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© Koninklijke Philips Electronics N.V. 2003
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Printed in The Netherlands
01/pp16
Date of release: 2003 Nov 06
Document order number: 9397 750 12118
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