2N7002BKMB [NXP]
60 V, single N-channel Trench MOSFET; 60 V ，单N沟道沟槽MOSFET
| 型号： | 2N7002BKMB |
| 厂家： | 
NXP |
| 描述： | 60 V, single N-channel Trench MOSFET |
| 文件： | 总15页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002BKMB
SOT883B
60 V, single N-channel Trench MOSFET
Rev. 2 — 13 June 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Logic-level compatible
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile with 0.37
mm height
1.3 Applications
Relay driver
Low-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
[1]
ID
VGS = 10 V; Tamb = 25 °C
450
mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 450 mA; Tj = 25 °C
-
1
1.6
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKMB
NXP Semiconductors
60 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
1
2
2
source
drain
3
3
G
Transparent
top view
SOT883B (DFN1006B-3)
S
017aaa255
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT883B
2N7002BKMB
DFN1006B-3
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
4. Marking
Table 4.
Marking codes
Type number
2N7002BKMB
Marking code
0000 0001
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1. DFN1006B-3 (SOT883B) binary marking code description
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
2 of 15
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
[1]
[1]
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
450
220
1.8
mA
mA
A
-
IDM
Ptot
peak drain current
-
[2]
[1]
total power dissipation
-
360
715
mW
mW
-
Tsp = 25 °C
-
2700 mW
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
[1]
[3]
IS
source current
Tamb = 25 °C
-
-
450
mA
V
ESD maximum rating
VESD
electrostatic discharge voltage HBM
2000
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
001aao121
001aao122
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
-25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 2. Normalized total power dissipation as a
function of junction temperature
Fig 3. Normalized continuous drain current as a
function of junction temperature
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Product data sheet
Rev. 2 — 13 June 2012
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
aaa-002590
10
I
D
(A)
limit R
= V / I
DS D
DSon
1
(1)
-1
10
(2)
(3)
(4)
(5)
-2
10
-1
2
10
1
10
10
V
(V)
DS
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
305
150
Max
350
175
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
40
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKMB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
4 of 15
2N7002BKMB
NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa109
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.05
0.1
0
0.02
0.01
10
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
10
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002BKMB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
5 of 15
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 10 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.1
1.6
2.1
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 450 mA; Tj = 25 °C
VGS = 10 V; ID = 450 mA; Tj = 150 °C
VGS = 5 V; ID = 50 mA; Tj = 25 °C
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
Ω
-
10
10
10
1.6
3.5
2
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
1
2.2
1.3
550
Ω
Ω
gfs
forward
-
mS
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 30 V; ID = 300 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.5
0.2
0.1
33
7
0.6
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
50
-
Coss
Crss
reverse transfer
capacitance
4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5
10
-
ns
ns
ns
ns
6
turn-off delay time
fall time
12
7
24
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V; Tj = 25 °C
0.47
0.75
1.1
V
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa039
017aaa040
−3
−4
−5
−6
0.7
10
V
= 4.0 V
GS
I
D
(A)
0.6
3.5 V
I
D
(A)
3.25 V
3.0 V
0.5
0.4
0.3
0.2
0.1
0.0
10
10
10
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0.0
1.0
2.0
3.0
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
017aaa041
017aaa042
6.0
6.0
R
DSon
R
DSon
(Ω)
(Ω)
(1)
4.0
2.0
0.0
4.0
2.0
0.0
(2)
(3)
(1)
(2)
(4)
(5)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
10.0
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = 500 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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Product data sheet
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60 V, single N-channel Trench MOSFET
017aaa043
aaa-002591
1.0
2.4
1.8
1.2
0.6
0.0
I
D
(A)
a
0.8
(1)
(2)
0.6
0.4
0.2
0.0
0.0
1.0
2.0
3.0
4.0
5.0
(V)
-60
0
60
120
180
T (°C)
V
GS
j
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 12. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
aaa-002592
017aaa046
2
3.0
10
V
GS(th)
(V)
(1)
C
(pF)
(1)
(2)
(3)
2.0
1.0
0.0
(2)
10
(3)
1
10
−1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 A; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 13. Gate-source threshold voltage as a function of
junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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Product data sheet
Rev. 2 — 13 June 2012
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
017aaa047
5.0
V
DS
V
GS
(V)
I
4.0
D
V
GS(pl)
3.0
2.0
1.0
0.0
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0.0
0.2
0.4
0.6
0.8
Q
(nC)
G
ID = 300 mA; VDS = 30 V; Tj = 25 °C
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Gate charge waveform definitions
017aaa048
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
(V)
SD
V
GS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 17. Source current as a function of source-drain voltage; typical values
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Product data sheet
Rev. 2 — 13 June 2012
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 18. Duty cycle definition
9. Package outline
0.65
0.55
0.40
0.34
0.35
0.20
0.12
0.04 max
1
2
0.30
0.22
1.05
0.95
0.65
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 19. Package outline SOT883B (DFN1006B-3)
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Product data sheet
Rev. 2 — 13 June 2012
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60 V, single N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6 0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
0.4
(2x)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot883b_fr
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
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60 V, single N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2N7002BKMB v.2
Modifications:
20120613
Product data sheet
-
2N7002BKMB v.1
•
7 “Characteristics”: RDSon condition corrected
2N7002BKMB v.1
20120511
Product data sheet
-
-
2N7002BKMB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
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60 V, single N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
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the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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specified use without further testing or modification.
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data sheet shall define the specification of the product as agreed between
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Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
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Semiconductors products in order to avoid a default of the applications and
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
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Product data sheet
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NXP Semiconductors
60 V, single N-channel Trench MOSFET
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reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
2N7002BKMB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 13 June 2012
14 of 15
2N7002BKMB
NXP Semiconductors
60 V, single N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 June 2012
Document identifier: 2N7002BKMB
相关型号：
2N7002BKW
TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal
NXP
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