2N7002BKS [NXP]
60 V, 300 mA dual N-channel Trench MOSFET; 60 V ， 300毫安双N沟道沟槽MOSFET
| 型号： | 2N7002BKS |
| 厂家： | 
NXP |
| 描述： | 60 V, 300 mA dual N-channel Trench MOSFET |
| 文件： | 总16页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002BKS
60 V, 300 mA dual N-channel Trench MOSFET
Rev. 2 — 23 September 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Tamb = 25 °C
Tamb = 25 °C
Min
Typ
Max
60
Unit
V
VDS
VGS
ID
drain-source voltage
-
-
-
-
-
-
gate-source voltage
drain current
±20
300
V
[1]
Tamb = 25 °C;
mA
VGS = 10 V
RDSon
drain-source on-state
resistance
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
-
1
1.6
Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKS
NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol
S1
Description
source 1
gate 1
Simplified outline
Graphic symbol
6
5
4
2
G1
1
2
6
5
3
D2
drain 2
4
S2
source 2
gate 2
1
2
3
5
G2
6
D1
drain 1
3
4
017aaa055
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
2N7002BKS
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
2N7002BKS
ZT*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
VDS
VGS
ID
drain-source voltage
Tamb = 25 °C
Tamb = 25 °C
VGS = 10 V
-
-
60
V
V
gate-source voltage
drain current
±20
[1]
Tamb = 25 °C
Tamb = 100 °C
-
-
300
215
mA
mA
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
2 of 16
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60 V, 300 mA dual N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
IDM peak drain current
Conditions
Min
Max
Unit
Tamb = 25 °C;
-
1.2
A
single pulse; tp ≤ 10 μs
[2]
[1]
Ptot
total power dissipation
Tamb = 25 °C
-
-
-
295
mW
mW
mW
340
Tsp = 25 °C
1040
Source-drain diode
[1]
[3]
IS
source current
Tamb = 25 °C
human body model
-
-
300
mA
V
ESD maximum rating
VESD
electrostatic discharge
2000
voltage
Per device
[2]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb = 25 °C
-
445
mW
°C
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Measured between all pins.
017aaa001
017aaa002
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
(°C)
−25
25
75
125
T
amb
175
(°C)
T
amb
Ptot
-----------------------
ID
-------------------
Pder
=
× 100 %
Ider
=
× 100 %
Ptot(25°C)
ID(25°C)
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
3 of 16
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60 V, 300 mA dual N-channel Trench MOSFET
017aaa056
10
I
D
(A)
Limit R
= V /I
DS D
DSon
1
(1)
(2)
−1
10
10
10
(3)
(4)
(5)
−2
(6)
−3
10
−1
2
1
10
10
V
DS
(V)
I
DM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
Per transistor
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
370
320
-
425
370
120
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
275
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
4 of 16
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60 V, 300 mA dual N-channel Trench MOSFET
017aaa057
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.02
0.01
10
0
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa058
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0
0.05
0.02
0.01
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
5 of 16
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NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown ID = 10 μA; VGS = 0 V
voltage
60
-
-
V
V
gate-source threshold
voltage
ID = 250 μA; VDS = VGS
1.1
1.6
2.1
drain leakage current
VDS = 60 V; VGS = 0 V
Tj = 25 °C
-
-
-
-
-
-
1
μA
μA
μA
Tj = 150 °C
10
10
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
[1]
[1]
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 mA
VGS = 10 V; ID = 500 mA
VDS = 10 V; ID = 200 mA
-
-
-
1.3
1
2
Ω
1.6
-
Ω
gfs
forward
550
mS
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 300 mA;
VDS = 30 V;
VGS = 4.5 V
-
-
-
-
-
-
0.5
0.2
0.1
33
7
0.6
nC
nC
nC
pF
pF
pF
-
-
VGS = 0 V; VDS = 10 V;
f = 1 MHz
50
-
Coss
Crss
reverse transfer
capacitance
4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDD = 50 V;
RL = 250 Ω;
VGS = 10 V;
RG = 6 Ω
-
-
-
-
5
10
-
ns
ns
ns
ns
6
turn-off delay time
fall time
12
7
24
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V
0.47 0.75 1.1
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
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60 V, 300 mA dual N-channel Trench MOSFET
017aaa039
017aaa040
−3
0.7
D
(A)
0.6
10
V
GS
= 4.0 V
I
3.5 V
I
D
(A)
3.25 V
3.0 V
0.5
0.4
0.3
0.2
0.1
0.0
−4
−5
−6
10
10
10
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0.0
1.0
2.0
3.0
(V)
V
GS
(V)
DS
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa041
017aaa042
6.0
6.0
R
DSon
R
DSon
(Ω)
(Ω)
(1)
4.0
2.0
0.0
4.0
2.0
0.0
(2)
(3)
(1)
(2)
(4)
(5)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
10.0
(V)
I
D
(A)
V
GS
Tamb = 25 °C
I
D = 500 mA
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
7 of 16
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NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
017aaa043
017aaa044
1.0
2.4
I
D
a
(A)
0.8
1.8
1.2
0.6
0.0
(1)
(2)
0.6
0.4
0.2
0.0
0.0
1.0
2.0
3.0
4.0
5.0
(V)
−60
0
60
120
180
(°C)
V
GS
T
amb
VDS > ID × RDSon
RDSon
a =
-----------------------------
RDSon(25°C)
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
017aaa045
017aaa046
2
3.0
10
V
GS(th)
(V)
(1)
C
(pF)
(1)
(2)
(3)
2.0
1.0
0.0
(2)
10
(3)
1
10
−1
2
−60
0
60
120
180
(°C)
1
10
10
T
amb
V
DS
(V)
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) Ciss
(1) maximum values
(2) typical values
(2) Coss
(3) Crss
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
8 of 16
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NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
017aaa047
5.0
V
GS
(V)
4.0
V
DS
I
D
3.0
2.0
1.0
0.0
V
GS(pl)
V
GS(th)
V
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
0.0
0.2
0.4
0.6
0.8
Q
G
(nC)
003aaa508
ID = 300 mA; VDD = 6 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa048
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
SD
(V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
9 of 16
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NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
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60 V, 300 mA dual N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 18. Package outline SOT363 (SC-88)
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
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60 V, 300 mA dual N-channel Trench MOSFET
10. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
Dimensions in mm
0.6
(4×)
1.8
sot363_fr
Fig 19. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 20. Wave soldering footprint SOT363 (SC-88)
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Product data sheet
Rev. 2 — 23 September 2010
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60 V, 300 mA dual N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
2N7002BKS v.2
Modifications:
2N7002BKS v.1
Release date
Data sheet status
Change notice
Supersedes
20100923
Product data sheet
-
2N7002BKS v.1
• Table 2 “Pinning”: graphic symbol amended
20100617 Product data sheet
-
-
2N7002BKS
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
13 of 16
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60 V, 300 mA dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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full information. For detailed and full information see the relevant full data
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and products using NXP Semiconductors products, and NXP Semiconductors
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data sheet shall define the specification of the product as agreed between
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12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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be accurate and reliable. However, NXP Semiconductors does not give any
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
2N7002BKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
14 of 16
2N7002BKS
NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002BKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 23 September 2010
15 of 16
2N7002BKS
NXP Semiconductors
60 V, 300 mA dual N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 September 2010
Document identifier: 2N7002BKS
相关型号：
2N7002BKW
TRANSISTOR 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal
NXP
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