1PS76SB70 [NXP]

Schottky barrier diode; 肖特基二极管
1PS76SB70
型号: 1PS76SB70
厂家: NXP    NXP
描述:

Schottky barrier diode
肖特基二极管

整流二极管 肖特基二极管 光电二极管
文件: 总8页 (文件大小:63K)
中文:  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
ok, halfpage  
1PS76SB70  
Schottky barrier diode  
1998 Jul 16  
Product specification  
Philips Semiconductors  
Product specification  
Schottky barrier diode  
1PS76SB70  
FEATURES  
DESCRIPTION  
Low forward voltage  
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic  
SMD package.  
Guard ring protected  
Very small plastic SMD package  
Low diode capacitance.  
handbook, 4 columns  
k
a
APPLICATIONS  
Ultra high-speed switching  
Voltage clamping  
MAM283  
Protection circuits  
Blocking diodes.  
Marking code: S2.  
Fig.1 Simplified outline (SOD323) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
storage temperature  
CONDITIONS  
MIN.  
MAX.  
70  
UNIT  
VR  
V
IF  
70  
mA  
mA  
mA  
°C  
IFRM  
IFSM  
Tstg  
Tj  
tp 1 s; δ ≤ 0.5  
tp < 10 ms  
70  
100  
+150  
150  
+150  
65  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
°C  
1998 Jul 16  
2
Philips Semiconductors  
Product specification  
Schottky barrier diode  
1PS76SB70  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
VF  
PARAMETER  
CONDITIONS  
see Fig.2  
MAX.  
UNIT  
continuous forward voltage  
IF = 1 mA  
410  
750  
1
mV  
mV  
V
IF = 10 mA  
IF = 15 mA  
IR  
continuous reverse current  
diode capacitance  
VR = 50 V; note 1; see Fig.3  
VR = 70 V; note 1; see Fig.3  
VR = 0 ; f = 1 MHz; see Fig.5  
100  
10  
2
nA  
µA  
pF  
Cd  
Note  
1. Pulsed test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
450  
UNIT  
Rth j-a  
K/W  
Note  
1. Refer to SOD323 standard mounting conditions.  
1998 Jul 16  
3
Philips Semiconductors  
Product specification  
Schottky barrier diode  
1PS76SB70  
GRAPHICAL DATA  
MRA803  
MRA805  
2
2
10  
10  
I
R
I
(1)  
F
(µA)  
(mA)  
10  
10  
(2)  
(3)  
1
1
1
10  
1
10  
2
3
10  
(1)  
(2) (3) (4)  
2
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1
0
20  
40  
60  
80  
V
(V)  
V
(V)  
R
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
(4) Tamb = 40 °C.  
(3) Tamb = 25 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Reverse current as a function of reverse  
voltage; typical values.  
MRA802  
MRA804  
3
10  
2
C
d
(pF)  
r
diff  
1.5  
2
10  
1
0.5  
0
10  
1
10  
1  
2
0
20  
40  
60  
80  
1
10  
10  
I
(mA)  
V
(V)  
F
R
f = 10 kHz.  
f = 1 MHz; Tamb = 25 °C.  
Fig.4 Differential forward resistance as a function  
of forward current; typical values.  
Fig.5 Diode capacitance as a function of reverse  
voltage; typical values.  
1998 Jul 16  
4
Philips Semiconductors  
Product specification  
Schottky barrier diode  
1PS76SB70  
PACKAGE OUTLINE  
SOD323  
Plastic surface mounted package; 2 leads  
Q
A
A
1
c
L
p
v
M
A
H
E
A
D
1
2
b
E
p
(1)  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max.  
UNIT  
A
b
c
D
E
H
L
p
Q
v
p
E
+ 0.05 0.40  
0.05 0.25  
0.25  
0.10  
1.1  
0.8  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45  
0.15  
0.25  
0.15  
mm  
0.2  
Note  
1. The marking bar indicates the cathode.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOD323  
98-09-14  
1998 Jul 16  
5
Philips Semiconductors  
Product specification  
Schottky barrier diode  
1PS76SB70  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Jul 16  
6
Philips Semiconductors  
Product specification  
Schottky barrier diode  
1PS76SB70  
NOTES  
1998 Jul 16  
7
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© Philips Electronics N.V. 1998  
SCA60  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115104/00/01/pp8  
Date of release: 1998 Jul 16  
Document order number: 9397 750 03996  

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