1PS76SB62,115 [NXP]

1PS76SB62;
1PS76SB62,115
型号: 1PS76SB62,115
厂家: NXP    NXP
描述:

1PS76SB62

光电二极管
文件: 总10页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1PS66SB62; 1PS76SB62  
40 V, 20 mA low Cd Schottky barrier diodes  
Rev. 03 — 24 November 2004  
Product data sheet  
1. Product profile  
1.1 General description  
Planar low capacitance Schottky barrier diodes with an integrated guard ring for stress  
protection, encapsulated in very small SMD plastic packages.  
Table 1:  
Product overview  
Type number  
Package  
Philips  
Configuration  
JEITA  
-
1PS66SB62  
1PS76SB62  
SOT666  
SOD323  
triple isolated diode  
single diode  
SC-76  
1.2 Features  
Very low diode capacitance  
Low forward voltage  
Very small SMD plastic packages.  
1.3 Applications  
Digital applications:  
Ultra high-speed switching  
Clamping circuits.  
RF applications:  
Diode ring mixer  
RF detector  
RF voltage doubler.  
1.4 Quick reference data  
Table 2:  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
20  
Unit  
mA  
V
forward current  
reverse voltage  
diode capacitance  
-
-
-
-
-
-
VR  
40  
Cd  
VR = 0 V; f = 1 MHz  
0.6  
pF  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
2. Pinning information  
Table 3:  
Pin  
Pinning  
Description  
Simplified outline  
Symbol  
1PS66SB62 (SOT666)  
1
2
3
4
5
6
anode (diode 1)  
6
5
4
6
5
2
4
anode (diode 2)  
anode (diode 3)  
cathode (diode 3)  
cathode (diode 2)  
cathode (diode 1)  
1
3
sym046  
1
2
3
SOT666  
1PS76SB62 (SOD323)  
[1]  
1
2
cathode  
anode  
1
2
1
2
sym001  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 4:  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
SOT666  
SOD323  
1PS66SB62  
1PS76SB62  
plastic surface mounted package; 6 leads  
plastic surface mounted package; 2 leads  
SC-76  
4. Marking  
Table 5:  
Marking codes  
Type number  
1PS66SB62  
1PS76SB62  
Marking code  
N3  
S6  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
2 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
5. Limiting values  
Table 6:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
40  
Unit  
V
VR  
IF  
reverse voltage  
-
forward current  
-
20  
mA  
°C  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
125  
+125  
+150  
Tamb  
Tstg  
65  
65  
°C  
°C  
6. Thermal characteristics  
Table 7:  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
Rth(j-a)  
thermal resistance from  
in free air  
junction to ambient  
[2] [3]  
[4]  
SOT666  
-
-
-
-
700  
450  
K/W  
K/W  
SOD323  
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse  
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse  
power losses PR and IF(AV) rating will be available on request.  
[2] Refer to SOT666 standard mounting conditions.  
[3] Reflow soldering is the only recommended soldering method.  
[4] Refer to SOD323 (SC-76) standard mounting conditions.  
7. Characteristics  
Table 8:  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
800  
1
Unit  
mV  
µA  
[1]  
[1]  
VF  
IR  
forward voltage  
reverse current  
IF = 2 mA; see Figure 1  
VR = 40 V; see Figure 2  
-
-
-
-
-
-
Cd  
diode capacitance VR = 0 V; f = 1 MHz;  
see Figure 3  
0.6  
pF  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
3 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
mld553  
mld554  
4
10  
10  
I
R
(nA)  
I
F
(1)  
(2)  
(mA)  
3
10  
1
2
10  
(2)  
(1)  
10  
(3)  
1  
10  
(3)  
1
1  
2  
10  
10  
0
0.4  
0.8  
1.2  
1.6  
2
0
10  
20  
30  
40  
V
(V)  
V
(V)  
R
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig 1. Forward current as a function of forward  
voltage; typical values  
Fig 2. Reverse current as a function of reverse  
voltage; typical values  
mld555  
0.40  
C
d
(pF)  
0.36  
0.32  
0.28  
0.24  
0.20  
0
10  
20  
30  
40  
V
R
(V)  
Tamb = 25 °C; f = 1 MHz.  
Fig 3. Diode capacitance as a function of reverse voltage; typical values  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
4 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
8. Package outline  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
01-08-27  
04-11-08  
SOT666  
Fig 4. Package outline SOT666  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
5 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
Plastic surface mounted package; 2 leads  
SOD323  
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)  
c
L
p
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
mm  
b
c
D
E
H
L
p
Q
v
A
p
D
max  
1.1  
0.8  
0.40 0.25  
0.25 0.10  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45 0.25  
0.15 0.15  
0.05  
0.2  
Note  
1. The marking bar indicates the cathode  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
99-09-13  
03-12-17  
SOD323  
SC-76  
Fig 5. Package outline SOD323 (SC-76)  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
6 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
9. Packing information  
Table 9:  
Packing methods  
The -xxx numbers are the last three digits of the 12NC ordering code. [1]  
Type number  
Package  
Description  
Packing quantity  
3000  
-
4000  
10000  
-
1PS66SB62  
1PS76SB62  
SOT666  
SOD323  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
-115  
-
-115  
-135  
[1] For further information and the availability of packing methods see Section 14.  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
7 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
10. Revision history  
Table 10: Revision history  
Document ID  
Release date  
Data sheet status  
Change notice Doc. number  
Supersedes  
1PS66SB62_  
1PS76SB62_3  
20041124  
Product data sheet  
-
9397 750 13845 1PS76SB62_2  
Modifications:  
The format of this data sheet has been redesigned to comply with the new presentation and  
information standard of Philips Semiconductors.  
Type number 1PS66SB62 added  
Section 1.1: text redefined  
Section 1.2: text redefined  
Section 1.3: RF applications added  
Table 2: table added  
Table 9: table added.  
1PS76SB62_2  
1PS76SB62_1  
20040126  
Product specification  
-
-
9397 750 12622 1PS76SB62_1  
9397 750 08024  
20010216  
Product specification  
-
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
8 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
11. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
12. Definitions  
13. Disclaimers  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
14. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 13845  
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.  
Product data sheet  
Rev. 03 — 24 November 2004  
9 of 10  
1PS66SB62; 1PS76SB62  
Philips Semiconductors  
40 V, 20 mA low Cd Schottky barrier diodes  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Packing information. . . . . . . . . . . . . . . . . . . . . . 7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Contact information . . . . . . . . . . . . . . . . . . . . . 9  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
© Koninklijke Philips Electronics N.V. 2004  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 24 November 2004  
Document number: 9397 750 13845  
Published in The Netherlands  

相关型号:

1PS76SB70

Schottky barrier diode
NXP

1PS76SB70

Schottky barrier Diodes
KEXIN

1PS76SB70

Low forward volatge Guard ring protected Very small plastic SMD package
TYSEMI

1PS76SB70

General-purpose Schottky diodeProduction
NEXPERIA

1PS76SB70,115

BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes SOD 2-Pin
NXP

1PS76SB70,135

BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes SOD 2-Pin
NXP

1PS76SB70-Q

General-purpose Schottky diodeProduction
NEXPERIA

1PS76SB70/DG,115

BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes SOD 2-Pin
NXP

1PS76SB70/T3

DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE, PLASTIC, SC-76, 2 PIN, Signal Diode
NXP

1PS76SB70T/R

DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE, PLASTIC, SC-76, 2 PIN, Signal Diode
NXP

1PS79SB10

Schottky barrier diode
NXP

1PS79SB10

Schottky Barrier Diode
KEXIN