1PS10SB82 [NXP]
Schottky barrier diode; 肖特基二极管
| 型号： | 1PS10SB82 |
| 厂家： | 
NXP |
| 描述： | Schottky barrier diode |
| 文件： | 总7页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
1PS10SB82
Schottky barrier diode
Product specification
2003 Aug 20
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
FEATURES
DESCRIPTION
• Low forward voltage
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
• Low diode capacitance
ESD sensitive device, observe handling precautions.
• Leadless ultra small plastic package
(1.0 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
handbook, halfpage
APPLICATIONS
• UHF mixers
Bottom view
MDB391
• Sampling circuits
• Modulators
Marking code: S5.
The marking bar indicates the cathode.
• Phase detectors
• Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
PARAMETER
MIN.
MAX.
15
UNIT
continuous reverse voltage
continuous forward current
storage temperature
−
−
V
IF
30
mA
°C
Tstg
Tj
−65
+150
150
junction temperature
−
°C
2003 Aug 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
see Fig.2
TYP.
MAX.
UNIT
IF = 1 mA
−
−
340
mV
IF = 30 mA
700
−
mV
Ω
rD
IR
differential diode forward resistance f = 1 MHz; IF = 5 mA; see Fig.5 12
continuous reverse current
diode capacitance
VR = 1 V; see Fig.3; note 1
−
0.2
−
µA
pF
Cd
VR = 0 V; f = 1 MHz; see Fig.4
1
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
500
UNIT
K/W
Rth j-a
note 1
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Aug 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
GRAPHICAL DATA
MLE112
MLE113
3
3
10
10
handbook, halfpage
handbook, halfpage
I
R
I
(µA)
F
(mA)
2
10
(2)
(1)
(3)
(1)
(2)
2
10
10
1
10
(3)
−1
10
(1)
(2)
(3)
−2
10
1
0
0.4
0.8
1.2
1.6
0
5
10
15
V
(V)
V
(V)
F
R
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3)
Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MLE114
MLE115
3
10
1.2
handbook, halfpage
handbook, halfpage
C
d
(pF)
r
D
(Ω)
1
2
10
0.8
0.6
0.4
10
1
10
−1
2
1
10
10
0
2
4
6
8
10
I
(mA)
V
(V)
F
R
f = 1 MHz; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Differential diode forward resistance as a
function of forward current; typical values.
2003 Aug 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
SOD882
L
L
1
2
b
e
1
A
A
1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
D
E
e
L
1
max.
0.50
0.46
0.55 0.62 1.02
0.47 0.55 0.95
0.30
0.22
mm
0.03
0.65
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-04-16
03-04-17
SOD882
2003 Aug 20
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS10SB82
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Aug 20
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp7
Date of release: 2003 Aug 20
Document order number: 9397 750 11309
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