1PS184 [NXP]
High-speed double diode; 高速双二极管
| 型号： | 1PS184 |
| 厂家： | 
NXP |
| 描述： | High-speed double diode |
| 文件： | 总6页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
1PS184
High-speed double diode
1996 Sep 03
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
High-speed double diode
1PS184
FEATURES
DESCRIPTION
PINNING
PIN
• Small plastic SMD package
The 1PS184 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
DESCRIPTION
• High switching speed: max. 4 ns
1
2
3
anode (a1)
• Continuous reverse voltage:
max. 80 V
anode (a2)
common cathode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
2
1
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
2
1
3
3
MAM084
Top view
Marking code: B3T.
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
85
80
V
V
IF
single diode loaded; see Fig.2;
note 1
215
mA
mA
mA
double diode loaded; see Fig.2;
note 1
−
−
125
500
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge
t = 1 µs
−
−
4
0.5
A
t = 1 s
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
250
mW
°C
°C
−65
−
+150
150
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed double diode
1PS184
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
610
740
−
−
mV
IF = 10 mA
−
mV
V
IF = 50 mA
1.0
1.2
IF = 100 mA
−
V
IR
reverse current
see Fig.4
VR = 25 V
−
−
−
−
−
−
30
0.5
30
nA
µA
µA
µA
pF
ns
VR = 80 V
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.5
100
1.5
4
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.6
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
250
500
K/W
K/W
Rth j-a
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed double diode
1PS184
GRAPHICAL DATA
MBD033
MBG382
300
300
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
200
200
single diode loaded
double diode loaded
100
100
0
0
0
1
2
0
100
200
o
V
(V)
T
( C)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG380
MBG446
2
10
0.8
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.6
(µA)
10
(1)
(2)
(3)
1
1
0.4
10
10
0.2
0
2
o
0
100
200
0
4
8
12
16
T ( C)
j
V
(V)
R
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.4 Reverse current as a function of junction
temperature.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed double diode
1PS184
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.7 Forward recovery voltage test circuit and waveforms.
5
1996 Sep 03
Philips Semiconductors
Product specification
High-speed double diode
1PS184
PACKAGE OUTLINE
1.3
1.0
1.65
1.25
0.50
0.35
0.100
0.013
0.2
M
A
A
3
3.0
2.5
1.7
1.3
2
1
0.6
0.2
2.1
1.7
3.1
2.7
0.26
0.10
MSA313 - 1
Dimensions in mm.
Fig.8 SC59.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03
6
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