LM733H [NSC]

LM733/LM733C Differential Amplifier; LM733 / LM733C差分放大器
LM733H
型号: LM733H
厂家: National Semiconductor    National Semiconductor
描述:

LM733/LM733C Differential Amplifier
LM733 / LM733C差分放大器

放大器
文件: 总6页 (文件大小:172K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
August 1989  
LM733/LM733C Differential Amplifier  
General Description  
Features  
Y
120 MHz bandwidth  
The LM733/LM733C is a two-stage, differential input, differ-  
ential output, wide-band video amplifier. The use of internal  
series-shunt feedback gives wide bandwidth with low phase  
distortion and high gain stability. Emitter-follower outputs  
provide a high current drive, low impedance capability. Its  
120 MHz bandwidth and selectable gains of 10, 100 and  
400, without need for frequency compensation, make it a  
very useful circuit for memory element drivers, pulse amplifi-  
ers, and wide band linear gain stages.  
Y
250 kX input resistance  
Y
Selectable gains of 10, 100, 400  
Y
No frequency compensation  
Y
High common mode rejection ratio at high frequencies  
Applications  
Y
Magnetic tape systems  
Y
Disk file memories  
b
The LM733 is specified for operation over the 55 C to  
125 C military temperature range. The LM733C is speci-  
§
Y
Thin and thick film memories  
a
§
Y
Woven and plated wire memories  
a
fied for operation over the 0 C to 70 C temperature range.  
§
§
Y
Wide band video amplifiers  
Connection Diagrams  
Dual-In-Line Package  
Metal Can Package  
TL/H/7866–2  
Note: Pin 5 connected to case.  
Top View  
Order Number LM733H or LM733CH  
See NS Package Number H10D  
TL/H/7866–1  
Top View  
Order Number LM733CN  
See NS Package Number N14A  
C
1995 National Semiconductor Corporation  
TL/H/7866  
RRD-B30M115/Printed in U. S. A.  
Absolute Maximum Ratings  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
Power Dissipation (Note 1)  
Junction Temperature  
500 mW  
a
150 C  
§
b
b
a
65 C to 150 C  
Storage Temperature Range  
§
§
g
g
g
Diffential Input Voltage  
5V  
6V  
8V  
Operating Temperature Range  
LM733  
LM733C  
Common Mode Input Voltage  
a
55 C to 125 C  
§
0 C to 70 C  
§
§
a
V
§
CC  
Output Current  
10 mA  
Lead Temperature (Soldering, 10 sec.)  
260 C  
§
e
e
g
Electrical Characteristics (T  
25 C, unless otherwise specified, see test circuits, V  
§
6.0V)  
A
S
LM733  
LM733C  
Typ  
Test  
Characteristics  
Test Conditions  
Units  
Circuit  
Min  
Typ  
Max  
Min  
Max  
Differential Voltage Gain  
Gain 1 (Note 2)  
300  
90  
400  
100  
10  
500  
110  
11  
250  
80  
400  
100  
10  
600  
120  
12  
Gain 2 (Note 3)  
Gain 3 (Note 4)  
1
2
2
2
e
e
3 Vp-p  
R
2 kX V  
OUT  
9.0  
8.0  
L
Bandwidth  
Gain 1  
40  
90  
40  
90  
MHz  
MHz  
MHz  
Gain 2  
Gain 3  
120  
120  
Rise Time  
Gain 1  
e
e
V
V
1 Vp-p  
10.5  
4.5  
10.5  
4.5  
ns  
ns  
ns  
OUT  
Gain 2  
10  
10  
12  
10  
Gain 3  
2.5  
2.5  
Propagation Delay  
Gain 1  
1 Vp-p  
OUT  
7.5  
6.0  
3.6  
7.5  
6.0  
3.6  
ns  
ns  
ns  
Gain 2  
Gain 3  
Input Resistance  
Gain 1  
4.0  
30  
4.0  
30  
kX  
kX  
kX  
Gain 2  
20  
10  
Gain 3  
250  
250  
Input Capacitance  
Input Offset Current  
Input Bias Current  
Input Noise Voltage  
Input Voltage Range  
Gain 2  
2.0  
0.4  
9.0  
12  
2.0  
0.4  
9.0  
12  
pF  
mA  
3.0  
20  
5.0  
30  
mA  
e
BW  
1 kHz to 10 MHz  
mVrms  
V
g
g
1.0  
1
1
1.0  
Common Mode Rejection Ratio  
s
1V f 100 kHz  
e
e
g
g
Gain 2  
Gain 2  
V
V
60  
86  
60  
60  
86  
60  
dB  
dB  
CM  
e
1V f  
5 MHz  
CM  
Supply Voltage Rejection Ratio  
Gain 2  
e
g
1
1
DV  
0.5V  
50  
70  
50  
70  
dB  
S
Output Offset Voltage  
Gain 1  
e %  
e %  
R
L
0.6  
1.5  
1.0  
0.6  
1.5  
1.5  
V
V
Gain 2 and 3  
0.35  
0.35  
Output Common Mode Voltage  
Output Voltage Swing  
Output Sink Current  
1
1
R
R
2.4  
3.0  
2.5  
2.9  
4.0  
3.6  
20  
3.4  
2.4  
3.0  
2.5  
2.9  
4.0  
3.6  
20  
3.4  
V
L
e
2k  
L
mA  
X
Output Resistance  
e %  
Power Supply Current  
1
R
L
18  
24  
18  
24  
mA  
2
Electrical Characteristics (Continued)  
k
k
k
k
b
(The following specifications apply for 55 C  
e
T
A
125 C for the LM733 and 0 C  
§
T
A
70 C for the LM733C, V  
§
§
§
S
g
6.0V)  
LM733  
Typ  
LM733C  
Test  
Circuit  
Characteristics  
Test Conditions  
Units  
Min  
Max  
Min  
Typ  
Max  
Differential Voltage Gain  
Gain 1  
Gain 2  
Gain 3  
200  
80  
8.0  
600  
120  
12.0  
250  
80  
8.0  
600  
120  
12.0  
e
e
3 Vp-p  
R
L
2 kX, V  
OUT  
1
Input Resistance Gain 2  
Input Offset Current  
Input Bias Current  
8
8
kX  
mA  
mA  
V
5
6
40  
40  
g
g
1
Input Voltage Range  
1
1
1
1
1
1
Common Mode Rejection Ratio  
Gain 2  
s
1V f 100 kHz  
e
g
g
V
50  
50  
50  
50  
dB  
dB  
CM  
Supply Voltage Rejection Ratio  
Gain 2  
e
DV  
0.5V  
S
Output Offset Voltage  
Gain 1  
Gain 2 and 3  
e %  
R
1.5  
1.2  
1.5  
1.5  
V
V
L
L
e
Output Voltage Swing  
Output Sink Current  
Power Supply Current  
R
2k  
2.5  
2.2  
2.8  
2.5  
V
pp  
mA  
mA  
e %  
1
R
27  
27  
L
Note 1: The maximum junction temperature of the LM733 is 150 C, while that of the LM733C is 100 C. For operation at elevated temperatures devices in the TO-  
§
§
100 package must be derated based on a thermal resistance of 150 C/W junction to ambient or 45 C/W junction to case. Thermal resistance of the dual-in-line  
§
§
package is 90 C/W.  
§
Note 2: Pins G1A and G1B connected together.  
Note 3: Pins G2A and G2B connected together.  
Note 4: Gain select pins open.  
Note 5: Refer to RETS733X drawing for specifications of LM733H version.  
Typical Performance Characteristics  
Pulse Response vs  
Temperature  
Pulse Response vs  
Supply Voltage  
Pulse Response  
TL/H/7866–6  
3
Typical Performance Characteristics (Continued)  
Gain vs Frequency  
Temperature  
Gain vs Frequency vs  
Supply Voltage  
Voltage Gain vs Frequency  
TL/H/7866–7  
4
Test Circuits  
Test Circuit 1  
Test Circuit 2  
TL/H/7866–3  
TL/H/7866–4  
Voltage Gain Adjust Circuit  
TL/H/7866–5  
e
e
25 C  
V
6V, T  
§
(Pin numbers apply to TO-5 package)  
S
A
Schematic Diagram  
TL/H/7866–8  
5
Physical Dimensions inches (millimeters)  
Metal Can Package (H)  
Order Number LM733H or LM
NS Package Number H10
Molded Dual-In-Line Package (N)  
Order Number LM733CN  
NS Package Number N14A  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL  
SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and whose  
failure to perform, when properly used in accordance  
with instructions for use provided in the labeling, can  
be reasonably expected to result in a significant injury  
to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
National Semiconductor  
Corporation  
National Semiconductor  
Europe  
National Semiconductor  
Hong Kong Ltd.  
National Semiconductor  
Japan Ltd.  
a
1111 West Bardin Road  
Arlington, TX 76017  
Tel: 1(800) 272-9959  
Fax: 1(800) 737-7018  
Fax:  
(
49) 0-180-530 85 86  
@
13th Floor, Straight Block,  
Ocean Centre, 5 Canton Rd.  
Tsimshatsui, Kowloon  
Hong Kong  
Tel: (852) 2737-1600  
Fax: (852) 2736-9960  
Tel: 81-043-299-2309  
Fax: 81-043-299-2408  
Email: cnjwge tevm2.nsc.com  
a
a
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a
Deutsch Tel:  
English Tel:  
Fran3ais Tel:  
Italiano Tel:  
(
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(
49) 0-180-530 85 85  
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  

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