CF5026AL1 [NPC]
Crystal Oscillator Module ICs; 晶体振荡器模块集成电路
| 型号： | CF5026AL1 |
| 厂家： | 
NIPPON PRECISION CIRCUITS INC |
| 描述： | Crystal Oscillator Module ICs |
| 文件： | 总16页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
5026 series
Crystal Oscillator Module ICs
OVERVIEW
The 5026 series are miniature crystal oscillator module ICs. They feature a damping resistor R matched to the
D
crystal's characteristics to reduce crystal current. They support fundamental oscillation and 3rd overtone oscil-
lation modes. The 5026 series can be used to correspond to wide range of applications.
FEATURES
ꢀ Miniature-crystal matched oscillator characteristics
ꢀ Operating supply voltage range
• 2.5V operation: 2.25 to 2.75V
• 3.0V operation: 2.7 to 3.6V
ꢀ Recommended operating frequency range
• For fundamental oscillator
ꢀ Standby function
• High impedance in standby mode, oscillator stops
ꢀ Low standby current
• Power-saving pull-up resistor built-in
ꢀ Oscillation detector function
ꢀ Frequency divider built-in (5026AL×)
• Varies with version: f , f /2, f /4, f /8, f /16,
- 5026AL×: 20MHz to 50MHz
- 5026BL1: 20MHz to 100MHz
• For 3rd overtone oscillator
O
O
O
O
O
f /32
O
ꢀ CMOS output duty level (1/2VDD)
ꢀ 50 5ꢀ output duty ꢁ 1/2VDD
ꢀ 30pF output load
ꢀ Molybdenum-gate CMOS process
ꢀ Chip form (CF5026×L×)
- 5026ML×: 70MHz to 133MHz
ꢀ −40 to 85°C operating temperature range
ꢀ Oscillator capacitor with excellent frequency char-
acteristics built-in
ꢀ Oscillator circuit with damping resistor R built-
D
in for reduced crystal current
SERIES CONFIGURATION
Standby mode
Recommended
Operating
Output
current
range (fundamental (V = 2.5V) frequency
Oscillation
mode
operating frequency
Output
Output duty
level
Oscillator
stop
function
Version
supply voltage
range [V]
DD
Output state
*1
oscillation) [MHz]
[mA]
CF5026AL1
CF5026AL2
CF5026AL3
CF5026AL4
CF5026AL5
CF5026AL6
f
O
f /2
O
f /4
O
2.25 to 3.6
Fundamental
20 to 50
4
CMOS
Yes
Hi-Z
f /8
O
f /16
O
f /32
O
*2
CF5026BL1
CF5026MLA
CF5026MLB
CF5026MLC
2.25 to 3.6
2.25 to 3.6
Fundamental
3rd overtone
20 to 100
70 to 80
8
8
f
CMOS
CMOS
Yes
Yes
Hi-Z
Hi-Z
O
80 to 100
90 to 133
f
O
*1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscil-
lator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the
oscillation characteristics of components must be carefully evaluated.
*2. The CF5026BL1 has a higher maximum operating frequency, hence the negative resistance is also larger than in the CF5026AL× devices.
ORDERING INFORMATION
Device
Package
CF5026×L×–3
Chip form
SEIKO NPC CORPORATION —1
5026 series
PAD LAYOUT
(Unit: µm)
(750,850)
VSS
Q
VDD
Y
INHN
XT
NPC
XTN
(0,0)
X
Chip size: 0.75 × 0.85mm
Chip thickness: 180 20ꢀm
PAD size: 90ꢀm
Chip base: V level
DD
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimensions [µm]
Name
I/O
Description
X
Y
Output state control input. High impedance when LOW (oscillator stops).
Power-saving pull-up resistor built-in.
INHN
I
605
413
XT
I
Amplifier input
579
171
131
144
144
438
Crystal connection pins.
Crystal is connected between XT and XTN.
Amplifier output
XTN
VDD
O
–
Supply voltage
Output. Output frequency determined by internal circuit to one of f , f /2, f /4, f /8, f /16,
O
f /32. High impedance in standby mode
O
O
O
O
O
Q
O
–
131
618
705
718
VSS
Ground
SEIKO NPC CORPORATION —2
5026 series
BLOCK DIAGRAM
For Fundamental Oscillator (5026AL×, 5026BL1)
VDD VSS
XTN
CG
CD
RD
XT
Rf
1/2 1/2 1/2 1/2 1/2
Q
INHN
INHN = LOW active
For 3rd Overtone Oscillator (5026ML×)
VDD VSS
XTN
CG
CD
Rf 1
Cf
RD
XT
Rf 2
Q
INHN
INHN = LOW active
SEIKO NPC CORPORATION —3
5026 series
SPECIFICATIONS
Absolute Maximum Ratings
V
= 0V
SS
Parameter
Symbol
Condition
Rating
Unit
V
Supply voltage range
Input voltage range
V
−0.5 to +7.0
DD
V
−0.5 to V + 0.5
DD
V
IN
Output voltage range
Operating temperature range
Storage temperature range
Output current
V
−0.5 to V + 0.5
DD
V
OUT
T
−40 to +85
−65 to +150
20
°C
°C
mA
opr
T
STG
I
OUT
Recommended Operating Conditions
V
= 0V
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.25
2.25
2.25
2.25
2.25
2.25
typ
–
max
3.6
3.6
3.6
3.6
3.6
3.6
5026AL×
5026BL1
5026MLA
5026MLB
CL ≤ 30pF
V
V
CL ≤ 30pF
–
f ≤ 80MHz, CL ≤ 30pF
f ≤ 100MHz, CL ≤ 30pF
f ≤ 100MHz, CL ≤ 30pF
f ≤ 133MHz, CL ≤ 15pF
–
V
Operating supply voltage
V
DD
–
V
–
V
5026MLC
–
V
Input voltage
V
V
–
V
V
IN
SS
DD
Operating temperature
T
−40
20
20
–
+85
50
°C
MHz
MHz
MHz
MHz
MHz
OPR
5026AL×
–
*2
5026BL1
5026MLA
5026MLB
–
100
80
*1
Operating frequency
f
70
–
O
*2
*2
80
–
100
133
5026MLC
90
–
*1. The operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency
band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation char-
acteristics of components must be carefully evaluated.
*2. When 2.5V operation, the ratings of switching characteristics are difference by the frequency or output load. Refer to “Switching Characteristics”.
SEIKO NPC CORPORATION —4
5026 series
Electrical Characteristics
5026AL× (2.5V operation)
V
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
1.95
0.3
–
Parameter
Symbol
Condition
Unit
min
1.65
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.25V, I = 4mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.25V, I = 4mA
DD OL
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
14
9
ꢀA
ꢀA
mA
mA
mA
mA
mA
mA
ꢀA
MΩ
kΩ
kΩ
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
–
OL
SS
5026AL1
5026AL2
5026AL3
5026AL4
5026AL5
5026AL6
–
7
–
4.5
3.5
2.9
2.5
2.4
–
–
7
Measurement cct 3, load cct 1,
INHN = open, C = 30pF, f = 50MHz
Current consumption
I
DD2
L
–
5.8
5.0
4.8
3
–
–
Standby current
I
Measurement cct 3, INHN = LOW
Measurement cct 4
–
ST
R
2
6
12
200
150
UP1
INHN pull-up resistance
Feedback resistance
R
20
50
100
–
UP2
R
Measurement cct 5
f
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
340
400
460
Ω
D
C
6.8
8.5
8
9.2
pF
pF
G
Built-in capacitance
C
10
11.5
D
SEIKO NPC CORPORATION —5
5026 series
5026AL× (3.0V operation)
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
typ
2.4
0.3
–
Parameter
Symbol
Condition
Unit
min
2.3
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 4mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 4mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
17
11
8
ꢀA
ꢀA
mA
mA
mA
mA
mA
mA
ꢀA
MΩ
kΩ
kΩ
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
–
OL
SS
5026AL1
5026AL2
5026AL3
5026AL4
5026AL5
5026AL6
–
8.5
5.5
4
–
–
Measurement cct 3, load cct 1,
INHN = open, C = 30pF, f = 50MHz
Current consumption
I
DD2
L
–
3.3
2.9
2.7
–
6.6
5.8
5.4
5
–
–
Standby current
I
Measurement cct 3, INHN = LOW
Measurement cct 4
–
ST
R
2
4
8
UP1
INHN pull-up resistance
Feedback resistance
R
15
50
75
–
150
150
UP2
R
Measurement cct 5
f
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
340
400
460
Ω
D
C
6.8
8.5
8
9.2
pF
pF
G
Built-in capacitance
C
10
11.5
D
SEIKO NPC CORPORATION —6
5026 series
5026BL1 (2.5V operation)
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
1.65
–
typ
1.95
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.25V, I = 8mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.25V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
ꢀA
ꢀA
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
OL
SS
Measurement cct 3, load cct 1, INHN = open, C = 30pF,
L
f = 100MHz
Current consumption
Standby current
I
–
14
28
mA
DD2
I
Measurement cct 3, INHN = LOW
–
2
–
6
3
ꢀA
MΩ
kΩ
kΩ
ST
R
12
UP1
INHN pull-up resistance
Feedback resistance
Measurement cct 4
R
20
50
100
–
200
150
UP2
R
Measurement cct 5
f
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
170
200
230
Ω
D
C
6.8
8.5
8
9.2
pF
pF
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
C
10
11.5
D
5026BL1 (3.0V operation)
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.3
typ
2.4
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
ꢀA
ꢀA
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
OL
SS
Measurement cct 3, load cct 1, INHN = open, C = 30pF,
L
f = 100MHz
Current consumption
Standby current
I
–
19
38
mA
DD2
I
Measurement cct 3, INHN = LOW
–
2
–
4
5
ꢀA
MΩ
kΩ
kΩ
ST
R
8
UP1
INHN pull-up resistance
Feedback resistance
Measurement cct 4
R
15
50
75
–
150
150
UP2
R
Measurement cct 5
f
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
170
200
230
Ω
D
C
6.8
8.5
8
9.2
pF
pF
G
Built-in capacitance
Design value. A monitor pattern on a wafer is tested.
C
10
11.5
D
SEIKO NPC CORPORATION —7
5026 series
5026ML× (2.5V operation)
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
1.65
–
typ
1.95
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.25V, I = 8mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.25V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
ꢀA
ꢀA
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
Z
–
OL
SS
I
f = 133MHz 5026MLC
–
15
30
mA
DD1
L
f = 72MHz 5026MLA
–
–
11
15
15
–
22
30
mA
mA
mA
ꢀA
Current consumption
Measurement cct 3, load cct 1,
INHN = open, C = 30pF
I
f = 100MHz 5026MLB
f = 100MHz 5026MLC
DD2
L
–
30
Standby current
I
Measurement cct 3, INHN = LOW
Measurement cct 4
–
3
ST
R
2
6
12
MΩ
kΩ
kΩ
kΩ
kΩ
kΩ
UP1
INHN pull-up resistance
R
20
3.99
2.29
2.97
50
100
4.7
2.70
3.5
–
200
5.41
3.11
4.03
150
UP2
5026MLA
5026MLB
Design value.
A monitor pattern on a wafer is tested.
AC feedback resistance
DC feedback resistance
R
f1
5026MLC
R
Measurement cct 5
f2
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
85
100
115
Ω
D
AC feedback capacitance
C
8.5
10
2
11.5
2.30
2.30
1.15
4.60
4.60
4.60
pF
pF
pF
pF
pF
pF
pF
f
5026MLA
1.70
1.70
0.85
3.40
3.40
3.40
Design value.
A monitor pattern on a wafer is tested.
C
5026MLB
5026MLC
5026MLA
5026MLB
5026MLC
2
G
1
Built-in capacitance
4
Design value.
A monitor pattern on a wafer is tested.
C
4
D
4
SEIKO NPC CORPORATION —8
5026 series
5026ML× (3.0V operation)
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.3
typ
2.4
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
ꢀA
ꢀA
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Measurement cct 3, load cct 1,
INHN = open, C = 15pF
Z
–
OL
SS
I
f = 133MHz 5026MLC
–
20
40
mA
DD1
L
f = 72MHz 5026MLA
–
–
15
20
20
–
30
40
mA
mA
mA
ꢀA
Current consumption
Measurement cct 3, load cct 1,
INHN = open, C = 30pF
I
f = 100MHz 5026MLB
f = 100MHz 5026MLC
DD2
L
–
40
Standby current
I
Measurement cct 3, INHN = LOW
Measurement cct 4
–
5
ST
R
2
4
8
MΩ
kΩ
kΩ
kΩ
kΩ
kΩ
UP1
INHN pull-up resistance
R
15
3.99
2.29
2.97
50
75
4.7
2.70
3.5
–
150
5.41
3.11
4.03
150
UP2
5026MLA
5026MLB
Design value.
A monitor pattern on a wafer is tested.
AC feedback resistance
DC feedback resistance
R
f1
5026MLC
R
Measurement cct 5
f2
Oscillator amplifier output
resistance
R
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
85
100
115
Ω
D
AC feedback capacitance
C
8.5
10
2
11.5
2.30
2.30
1.15
4.60
4.60
4.60
pF
pF
pF
pF
pF
pF
pF
f
5026MLA
1.70
1.70
0.85
3.40
3.40
3.40
Design value.
A monitor pattern on a wafer is tested.
C
5026MLB
5026MLC
5026MLA
5026MLB
5026MLC
2
G
1
Built-in capacitance
4
Design value.
A monitor pattern on a wafer is tested.
C
4
D
4
SEIKO NPC CORPORATION —9
5026 series
Switching Characteristics
5026AL× (2.5V operation)
V
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
–
typ
3
max
6
t
C = 15pF
L
ns
ns
ns
ns
%
r1
Measurement cct 3, load cct 1,
0.1V to 0.9V
Output rise time
Output fall time
Output duty cycle
DD
DD
t
C = 30pF
L
–
5
10
6
r2
t
C = 15pF
L
–
3
f1
Measurement cct 3, load cct 1,
0.9V to 0.1V
DD
DD
t
C = 30pF
L
–
5
10
55
55
100
100
f2
Duty1
Duty2
C = 15pF
L
45
45
–
–
Measurement cct 3, load cct 1,
= 2.5V, Ta = 25°C, f = 50MHz
*1
V
DD
C = 30pF
L
–
%
*2
Output disable delay time
t
–
ns
ns
PLZ
Measurement cct 6, load cct 1, V = 2.5V, Ta = 25°C,
DD
*2
C = 15pF
L
Output enable delay time
t
–
–
PZL
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5026AL× (3.0V operation)
V
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
2.5
4.5
2.5
4.5
–
Parameter
Symbol
Condition
Unit
min
–
max
5
t
C = 15pF
L
ns
ns
ns
ns
%
r1
Measurement cct 3, load cct 1,
0.1V to 0.9V
Output rise time
Output fall time
Output duty cycle
DD
DD
t
C = 30pF
L
–
9
r2
t
C = 15pF
L
–
5
f1
Measurement cct 3, load cct 1,
0.9V to 0.1V
DD
DD
t
C = 30pF
L
–
9
f2
Duty1
Duty2
C = 15pF
L
45
45
–
55
55
100
100
Measurement cct 3, load cct 1,
= 3.0V, Ta = 25°C, f = 50MHz
*1
V
DD
C = 30pF
L
–
%
*2
Output disable delay time
t
–
ns
ns
PLZ
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
DD
*2
C = 15pF
L
Output enable delay time
t
–
–
PZL
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —10
5026 series
5026BL1 (2.5V operation)
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
–
typ
2
max
t
C = 15pF
L
4
6
ns
ns
r1
Measurement cct 3, load cct 1,
0.1V to 0.9V
DD
DD
t
C = 30pF
L
–
3
r2
Output rise time
Output fall time
Measurement cct 3, load cct 1,
0.2V to 0.8V
t
C = 30pF
L
–
2.5
5
ns
r3
DD
DD
t
C = 15pF
L
–
–
2
3
4
6
ns
ns
f1
Measurement cct 3, load cct 1,
0.9V to 0.1V
DD
DD
t
C = 30pF
L
f2
Measurement cct 3, load cct 1,
0.8V to 0.2V
t
C = 30pF
L
–
2.5
–
5
ns
%
%
%
f3
DD
DD
C = 15pF
L
f = 100MHz
Duty1
Duty2
Duty3
45
45
40
55
55
60
Measurement cct 3, load cct 1,
= 2.5V, Ta = 25°C
C = 30pF
L
f = 80MHz
*1
Output duty cycle
–
V
DD
C = 30pF
L
f = 100MHz
–
*2
Output disable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 6, load cct 1, V = 2.5V, Ta = 25°C,
L
DD
*2
C = 15pF
Output enable delay time
t
PZL
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5026BL1 (3.0V operation)
V
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
1.5
2.5
1.5
2.5
–
Parameter
Symbol
Condition
Unit
min
–
max
3
t
C = 15pF
L
ns
ns
ns
ns
%
r1
Measurement cct 3, load cct 1,
0.1V to 0.9V
Output rise time
Output fall time
Output duty cycle
DD
DD
t
C = 30pF
L
–
5
r2
t
C = 15pF
L
–
3
f1
Measurement cct 3, load cct 1,
0.9V to 0.1V
DD
DD
t
C = 30pF
L
–
5
f2
Duty1
Duty2
C = 15pF
L
45
45
–
55
55
100
100
Measurement cct 3, load cct 1,
= 3.0V, Ta = 25°C, f = 100MHz
*1
V
DD
C = 30pF
L
–
%
*2
Output disable delay time
t
–
ns
ns
PLZ
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
DD
*2
C = 15pF
L
Output enable delay time
t
–
–
PZL
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —11
5026 series
5026ML× (2.5V operation)
= 2.25 to 2.75V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
–
typ
2
max
4
t
C = 15pF
L
ns
ns
ns
ns
%
%
%
%
%
%
ns
ns
r1
Measurement cct 3, load cct 1,
0.1V to 0.9V
Output rise time
Output fall time
DD
DD
t
C = 30pF
L
–
3
6
r2
t
C = 15pF
L
–
2
4
f1
Measurement cct 3, load cct 1,
0.9V to 0.1V
DD
DD
t
C = 30pF
L
–
3
6
f2
f = 72MHz
5026MLA
45
45
45
45
40
40
–
–
55
55
55
55
60
60
100
100
Measurement cct 3, load cct 1,
= 2.5V, Ta = 25°C,
Duty1
Duty2
V
DD
C = 15pF
f = 100MHz 5026MLB
f = 133MHz 5026MLC
–
L
–
*1
Output duty cycle
f = 72MHz
5026MLA
–
Measurement cct 3, load cct 1,
V
C = 30pF
= 2.5V, Ta = 25°C,
f = 100MHz 5026MLB
f = 100MHz 5026MLC
–
DD
L
–
*2
Output disable delay time
t
–
PLZ
Measurement cct 6, load cct 1, V = 2.5V, Ta = 25°C,
DD
*2
C = 15pF
L
Output enable delay time
t
–
–
PZL
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
5026ML× (3.0V operation)
V
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
SS
DD
Rating
typ
1.5
2.5
1.5
2.5
–
Parameter
Symbol
Condition
Unit
min
–
max
3
t
C = 15pF
L
ns
ns
ns
ns
%
%
%
%
r1
Measurement cct 3, load cct 1,
0.1V to 0.9V
Output rise time
Output fall time
DD
DD
t
C = 30pF
L
–
5
r2
t
C = 15pF
L
–
3
f1
Measurement cct 3, load cct 1,
0.9V to 0.1V
DD
DD
t
C = 30pF
L
–
5
f2
f = 72MHz
5026MLA
45
45
45
45
55
55
55
55
Measurement cct 3, load cct 1,
= 3.0V, Ta = 25°C,
Duty1
Duty2
V
DD
C = 15pF
f = 100MHz 5026MLB
f = 133MHz 5026MLC
–
L
–
*1
Measurement cct 3, load cct 1,
= 3.0V, Ta = 25°C,
f = 72MHz
5026MLA
–
Output duty cycle
V
DD
C = 30pF
f = 100MHz 5026MLB
45
45
–
–
55
55
%
%
L
Measurement cct 3, load cct 1, V = 3.3V,
DD
Ta = 25°C, C = 30pF, f = 100MHz
5026MLC
L
*2
Output disable delay time
t
–
–
–
–
100
100
ns
ns
PLZ
Measurement cct 6, load cct 1, V = 3.0V, Ta = 25°C,
L
DD
*2
C = 15pF
Output enable delay time
t
PZL
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
SEIKO NPC CORPORATION —12
5026 series
Current consumption and Output waveform with NPC’s standard crystal
f [MHz]
50
R [Ω]
16.12
−
L [mH]
Ca [fF]
Cb [pF]
Cb
Ca
6.88
−
1.48
−
1.18
−
72
100
−
−
−
−
L
R
Note. The 72MHz and 100MHz crystal parameters are confidential.
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Version
5026AL×
INHN
HIGH (or open)
LOW
Q
Oscillator
Normal operation
Stopped
Any f , f /2, f /4, f /8, f /16 or f /32 output frequency
O
O
O
O
O
O
5026BL1, ML×
f
O
5026AL×, BL1, ML×
High impedance
Power-saving Pull-up Resistor
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
SEIKO NPC CORPORATION —13
5026 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
C1
VDD
VDD
Signal
Generator
XT
XT
VDD
Q
Q
RUP1 =
RUP2 =
IPR
XTN
INHN
XTN
INHN
(VPR = VSS)
R1
VSS
VSS
VDD VPR
R2
IPR
V
VPR
(VPR = 0.7VDD)
IPR
VDD
VOH
0V
A
Q output
2Vp-p, 10MHz sine wave input signal
C1: 0.001µF
R1: 50Ω
R2: 5026AL×
: 412Ω (2.5V operation)
575Ω (3.0V operation)
Measurement cct 5
5026BL1, ML× : 206Ω (2.5V operation)
287Ω (3.0V operation)
Measurement cct 2
VDD
VDD
Rf =
XT
IRf
Q
VDD
Rf 2 =
XTN
INHN
IRf
VSS
IZ, IOL
VDD
IZ
A
XT
Q
A
IRf
XTN
INHN
VSS
VOH
VOL
V
Measurement cct 6
C1
VDD
Signal
Generator
Measurement cct 3
XT
Q
XTN
INHN
R1
VSS
IDD
IST
A
VDD
XT
X'tal
Q
XTN
INHN
2Vp-p, 10MHz sine wave input signal
C1: 0.001µF
R1: 50Ω
VSS
Load cct 1
Q output
CL
(Including probe
capacitance)
SEIKO NPC CORPORATION —14
5026 series
Switching Time Measurement Waveform
Output duty level, t , t
r
f
0.9VDD
0.8VDD
0.9VDD
0.8VDD
DUTY measurement
voltage (0.5VDD)
Q output
0.2VDD
0.1VDD
0.2VDD
0.1VDD
TW
tr3
tf3
tr1,tr2
tf1,tf2
Output duty cycle
DUTY measurement
voltage (0.5VDD)
Q output
TW
DUTY= TW/ T 100 (%)
T
Output Enable/Disable Delay
when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable
oscillator output occurs after a short delay.
VIH
INHN
VIL
tPLZ
tPZL
Q output
INHN input waveform tr = tf 10ns
SEIKO NPC CORPORATION —15
5026 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and
harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right
to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that
the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.
Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.
Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,
and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or
modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
SEIKO NPC CORPORATION
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: sales@npc.co.jp
NC0413CE 2008.12
SEIKO NPC CORPORATION —16
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