CF5027A1-4_技术文档

WF5027 series

Crystal Oscillator Module ICs

OVERVIEW

The WF5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regula-

tor drive, signiﬁcantly reducing current consumption and crystal current, compared with existing devices, and

signiﬁcantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package

options available for optimized mounting, making these devices ideal for miniature crystal oscillators.

FEATURES

^ꢀWide range of operating supply voltage: 1.60 to 3.63V

ꢀ Regulated voltage drive oscillator circuit for reduced

power consumption and crystal drive current

^ꢀOptimized low crystal drive current oscillation for

miniature crystal units

^ꢀMulti-stage frequency divider for low-frequency

output support: 0.9MHz (min)

^ꢀFrequency divider built-in (for fundamental oscil-

lator)

• Selectable by version: f , f /2, f /4, f /8, f /16,

O

^ꢀ3 pad layout options for mounting

f /32, f /64

O O

• 5027A×, M×, Q× series: for Flip Chip Bonding

• 5027B×, N×, R× series: for Wire Bonding (type I)

• 5027C×, P×, S× series: for Wire Bonding (type II)

^ꢀRecommended oscillation frequency range

For fundamental oscillator

^ꢀ−40 to 85°C operating temperature range

^ꢀStandby function

• High impedance in standby mode, oscillator

stops

^ꢀCMOS output duty level (1/2VDD)

^ꢀ50 5ꢀ output duty

^ꢀ15pF output drive capability

^ꢀWafer form (WF5027××)

Chip form (CF5027××)

• Low frequency version: 20MHz to 60MHz

• High frequency version: 60MHz to 100MHz

For 3rd overtone oscillator

• Low frequency version: 40MHz to 110MHz

*1

• High frequency version : 110MHz to 180MHz

*1: under development

APPLICATIONS

ꢀ 3.2 × 2.5, 2.5 × 2.0, 2.0 × 1.6 size miniature crystal oscillator modules

ORDERING INFORMATION

Device

Package

Wafer form

Chip form

WF5027××–4

CF5027××–4

SEIKO NPC CORPORATION —1

WF5027 series

SERIES CONFIGURATION

For Fundamental Oscillator

*2

Operating

Output drive

supply

voltage range

[V]

Recommended

Version

oscillation

frequency range

[MHz]

capability

[mA]

PAD layout

*1

f

f /2

O

output

f /32

O

output

f /64

O

output

f /4

O

output

f /8

O

output

f /16

O

output

O

output

20 to 60

60 to 100

20 to 60

60 to 100

20 to 60

60 to 100

5027A1 5027A2 5027A3 5027A4 5027A5 5027A6 5027A7

5027AP 5027AQ 5027AR 5027AS 5027AT 5027AV 5027AW

5027B1 5027B2 5027B3 5027B4 5027B5 5027B6 5027B7

5027BP 5027BQ 5027BR 5027BS 5027BT 5027BV 5027BW

5027C1 5027C2 5027C3 5027C4 5027C5 5027C6 5027C7

5027CP 5027CQ 5027CR 5027CS 5027CT 5027CV 5027CW

Flip Chip

Bonding

Wire Bonding

Type I

1.60 to 3.63

4

Wire Bonding

Type II

*1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscilla-

tion frequency range is not guaranteed. Speciﬁcally, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the

oscillation characteristics of components must be carefully evaluated.

*2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××.

For 3rd Overtone Oscillator

*1

*2

Operating

supply

voltage range

[V]

Recommended oscillation frequency range [MHz] and version

Output drive

capability

[mA]

PAD layout

65 to 85

85 to 110 110 to 145

145 to 180

40 to 50

50 to 65

Flip Chip Bonding

Wire Bonding Type I

Wire Bonding Type II

5027MA

5027NA

5027PA

5027MB

5027NB

5027PB

5027MC

5027NC

5027PC

5027MD

5027ND

5027PD

(5027QE) (5027QF)

(5027RE) (5027RF)

1.60 to 3.63

8

(5027SE)

(5027SF)

*1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscilla-

tion frequency range is not guaranteed. Speciﬁcally, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the

oscillation characteristics of components must be carefully evaluated.

*2. Wafer form devices have designation WF5027×× and chip form devices have designation CF5027××.

Versions in parentheses ( ) are under development.

VERSION NAME

Device

Package

Version name

WF5027

−4

WF5027××–4

Wafer form

Form WF: Wafer form

CF: Chip (Die) form

Oscillation frequency range, frequency divider function

Pad layout type A, M, Q: for Flip Chip Bonding

B, N, R: for Wire Bonding (type I)

CF5027××–4

Chip form

C, P, S: for Wire Bonding (type II)

SEIKO NPC CORPORATION —2

WF5027 series

PAD LAYOUT

(Unit: µm)

^ꢀ5027A×, M×, Q×

^ꢀ5027B×, N×, R×

(for Wire Bonding (type I))

^ꢀ5027C×, P×, S×

(for Flip Chip Bonding)

(for Wire Bonding (type II))

(750,690)

Q

(750,690)

VSS

5

6

4

3

Q

5

6

4

3

VSS

VDD

5

6

4

3

Q

Y

INHN

VDD

INHN

VSS

1

2

1

2

1

2

(0,0)

XT

XTN

XT

XTN

X

Chip size: 0.75 × 0.69mm

Chip thickness: 130 15ꢀm

Chip size: 0.75 × 0.69mm

Chip thickness: 130 15ꢀm

PAD size: 90ꢀm

Chip size: 0.75 × 0.69mm

Chip thickness: 130 15ꢀm

PAD size: 90ꢀm

Chip base: V level

PAD size: 90ꢀm

Chip base: V level

SS

PAD DIMENSIONS PIN DESCRIPTION

Pad dimensions [µm]

Pad No.

5027A× 5027B× 5027C×

5027M× 5027N× 5027P×

5027Q× 5027R× 5027S×

Pad No.

Name

Description

X

Y

1

2

3

229

520

636

114

304

1

2

3

2

1

6

1

2

5

XT

Ampliﬁer input

Ampliﬁer output

Crystal connection pins. Crystal is connected

between XT and XTN.

XTN

VDD (+) supply voltage

–

Output frequency determined by internal circuit

to one of f , f /2, f /4, f /8, f /16, f /32, f /64

4

5

6

636

114

531

304

4

5

6

5

4

3

4

3

6

Q

Output

O

VSS

INHN

(–) ground

–

Output state

control input

High impedance when LOW (oscillator stops).

Power-saving pull-up resistor built-in.

BLOCK DIAGRAM

VDD VSS

INHN

VRG

RF

DIVIDER

CMOS

Q

XT

RD

CG

CD

XTN

SEIKO NPC CORPORATION —3

WF5027 series

VERSION DISCRIMINATION INTERNAL COMPONENTS

The WF5027 series device version is not determined solely by the mask pattern, but can also be determined by

the trimming of internal trimming fuses.

^ꢀVersion determined by laser trimming:

These chips are produced from a common device by the laser trimming of fuses corresponding to the ordered

version, shown in table 1. These devices are shipped for electrical characteristics testing. Laser-trimmed ver-

sions are identiﬁed externally by the combination of the version name marking (1) and the locations of

trimmed fuses (2).

^ꢀVersion determined by mask pattern:

These chips are fabricated using the mask corresponding to the ordered version, and do not require trimming.

Mask-fabricated versions are identiﬁed externally by the version name marking (1) only.

Since the WF5027 series devices are manufactured using 2 methods, there are 2 types of IC chip available

(identiﬁed externally) for the same version name. The identiﬁcation markings for all WF5027 series device

versions is shown in table 2.

(750,690)

(1) Version code on die

NPC

(2) Trimming fuses

F1

F2

F3

F4

F5

F6

F7

F8

F9

SEIKO NPC CORPORATION —4

WF5027 series

Table 1. Version and trimming fuses

(for fundamental oscillator)

ꢀ 5027×1 trimming fuses (untrimmed)

ꢀ 5027×2 trimming fuses (F1 link trimmed)

ꢀ 5027×3 trimming fuses (F2 link trimmed)

*1

Trimming fuse number

Version

F1

–

F2

–

F3

–

F4

F5

5027×1

5027×2

5027×3

5027×4

5027×5

5027×6

5027×7

5027×P

5027×Q

5027×R

5027×S

5027×T

5027×V

5027×W

–

×

–

×

–

×

–

×

–

×

–

×

–

×

–

×

–

ꢀ 5027×4 trimming fuses (F1 and F2 links trimmed)

×

–

×

–

×

*1. –: untrimmed, ×: trimmed, F6 to F9 not used

: trimmed device

Table 2. Version and trimming fuses (for 3rd overtone oscillator)

*2

Trimming fuse number

Recommended oscillation

*1

Version

frequency range [MHz]

F1

–

F2

–

F3

–

F4

–

F5

–

F6

F7

×

F8

×

–

F9

×

5027×A

5027×B

5027×C

5027×D

5027×E

5027×F

40 to 50

50 to 65

–

×

–

×

65 to 85

×

–

×

–

×

85 to 110

(110 to 145)

(145 to 180)

×

–

×

TBD

*1. Values in parentheses ( ) are provisional only.

*2. –: untrimmed, ×: trimmed

SEIKO NPC CORPORATION —5

WF5027 series

Table 3. Version identiﬁcation by version name and chip markings (for fundamental oscillator)

Version set by trimming fuses

Version set by mask pattern

Version

name

Trimming

fuses

*1

Trimming fuses

F4

Versioncode

on chip

Version code

on chip

F1

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

F2

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

−

×

F3

−

×

−

×

−

×

−

×

−

×

−

×

F5

−

×

−

×

−

×

F6

F7

F8

F9

F1 to F9

5027A1

5027A2

5027A3

5027A4

5027A5

5027A6

5027A7

5027AP

5027AQ

5027AR

5027AS

5027AT

5027AV

5027AW

5027B1

5027B2

5027B3

5027B4

5027B5

5027B6

5027B7

5027BP

5027BQ

5027BR

5027BS

5027BT

5027BV

5027BW

5027C1

5027C2

5027C3

5027C4

5027C5

5027C6

5027C7

5027CP

5027CQ

5027CR

5027CS

5027CT

5027CV

5027CW

AX

BX

CX

−

×

−

×

−

×

AX

A2

A3

A4

A5

A6

A7

AP

AQ

AR

AS

AT

AV

AW

BX

B2

B3

B4

B5

B6

B7

BP

BQ

BR

BS

BT

BV

BW

CX

C2

C3

C4

C5

C6

C7

CP

CQ

CR

CS

CT

CV

CW

Untrimmed

*1. −: untrimmed, ×: trimmed

SEIKO NPC CORPORATION —6

WF5027 series

Table 4. Version identiﬁcation by version name and chip markings (for 3rd overtone oscillator)

Version set by trimming fuses

Version set by mask pattern

Version

name

Trimming

fuses

*1

Trimming fuses

F4

Versioncode

on chip

Version code

on chip

F1

−

×

−

×

−

×

−

F2

−

×

−

×

−

×

F3

−

×

−

×

−

×

F5

−

×

−

×

−

×

F6

−

F7

×

−

×

−

×

−

×

F8

×

−

×

−

×

−

F9

×

F1 to F9

5027MA

5027MB

5027MC

5027MD

5027NA

5027NB

5027NC

5027ND

5027PA

MX

NX

PX

−

×

−

×

−

×

MA

MB

MC

MD

NA

NB

NC

ND

PA

Untrimmed

5027PB

5027PC

5027PD

(5027QE)

(5027QF)

(5027RE)

(5027RF)

(5027SE)

(5027SF)

PB

PC

PD

TBD

*1. −: untrimmed, ×: trimmed

SEIKO NPC CORPORATION —7

WF5027 series

SPECIFICATIONS

Absolute Maximum Ratings

V

= 0V

SS

Parameter

Symbol

Condition

Rating

Unit

V

Supply voltage range

Input voltage range

Output voltage range

Storage temperature range

Output current

V

Between VDD and VSS

−0.5 to +4.0

DD

V

Input pins

Output pins

Wafer form

Q pin

−0.5 to V + 0.5

DD

V

IN

V

−0.5 to V + 0.5

DD

V

OUT

T

−65 to +150

°C

mA

STG

I

20

OUT

Recommended Operating Conditions

For Fundamental Oscillator

V

= 0V

SS

Rating

Parameter

Symbol

Condition

Unit

min

typ

–

max

Operating supply voltage

Input voltage

V

CL ≤ 15pF

1.60

3.63

V

DD

V

Input pins

V

–

V

IN

SS

DD

Operating temperature

T

−40

20

–

+85

60

°C

OPR

5027×1 to 5027×7

5027×P to 5027×W

–

MHz

*1

Oscillation frequency

f

O

60

–

100

60

5027×1 to 5027×7

5027×P to 5027×W

0.9

–

Output frequency

f

CL ≤ 15pF

OUT

–

100

*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency

range is not guaranteed. Speciﬁcally, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation

characteristics of components must be carefully evaluated.

For 3rd Overtone Oscillator

V

= 0V

SS

Rating

Parameter

Symbol

Condition

Unit

min

typ

–

max

Operating supply voltage

Input voltage

V

CL ≤ 15pF

1.60

3.63

V

DD

V

Input pins

V

–

V

IN

SS

DD

Operating temperature

T

−40

40

–

+85

50

°C

OPR

5027×A

5027×B

5027×C

5027×D

–

MHz

50

–

65

*1

Oscillation frequency

f

O

65

–

85

–

110

*1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency

range is not guaranteed. Speciﬁcally, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation

characteristics of components must be carefully evaluated.

SEIKO NPC CORPORATION —8

WF5027 series

Electrical Characteristics

DC Characteristics

For Fundamental Oscillator: Low frequency version (5027×1 to 5027×7)

= 1.60 to 3.63V, V = 0V, Ta = −40 to +85°C unless otherwise noted.

V

DD

SS

Rating

typ

–

Parameter

Symbol

Condition

Unit

min

– 0.4

max

–

HIGH-level output voltage

LOW-level output voltage

HIGH-level input voltage

LOW-level input voltage

V

Q: Measurement cct 3, I = – 4mA

OH

V

OH

DD

V

Q: Measurement cct 3, I = 4mA

OL

–

0.4

–

V

OL

V

INHN, Measurement cct 4

0.7V

–

V

IH

DD

V

–

0.3V

V

IL

DD

V

= V

–

10

–

ꢀA

OH

OL

DD

Q: Measurement cct 5,

INHN = LOW

Output leakage current

I

Z

– 10

–

ꢀA

SS

= 3.3V

–

1.6

1.3

1.0

1.5

1.2

0.9

1.3

1.0

0.8

1.1

0.9

0.75

1.05

0.85

0.7

1.0

0.85

0.7

1.0

0.85

0.7

–

2.4

2.0

1.5

2.3

1.8

1.4

2.0

1.5

1.2

1.7

1.4

1.15

1.6

1.3

1.1

1.5

1.3

1.1

1.5

1.3

1.1

10

mA

ꢀA

5027×1 (f ), Measurement cct 1,

O

no load, INHN = open, f = 48MHz,

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

O

f

= 48MHz

OUT

5027×2 (f /2), Measurement cct 1,

O

no load, INHN = open, f = 48MHz,

O

f

= 24MHz

OUT

5027×3 (f /4), Measurement cct 1,

O

no load, INHN = open, f = 48MHz,

O

f

= 12MHz

OUT

5027×4 (f /8), Measurement cct 1,

O

no load, INHN = open, f = 48MHz,

*1

Current consumption

I

DD

O

f

= 6MHz

OUT

5027×5 (f /16), Measurement cct 1,

O

no load, INHN = open, f = 48MHz,

O

f

= 3MHz

OUT

5027×6 (f /32), Measurement cct 1,

O

no load, INHN = open, f = 48MHz,

O

f

= 1.5MHz

OUT

5027×7 (f /64), Measurement cct 1,

O

no load, INHN = open, f = 60MHz,

O

f

= 0.94MHz

OUT

Standby current

I

Measurement cct 1, INHN = LOW

Measurement cct 6

ST

R

0.4

30

1.5

70

8

MΩ

kΩ

UP1

INHN pull-up resistance

R

150

UP2

Oscillator feedback

resistance

R

50

100

200

kΩ

f

C

4.8

8

6

7.2

12

pF

G

Design value (a monitor pattern on a wafer is tested),

Excluding parasitic capacitance.

Oscillator capacitance

C

10

D

*1. The consumption current I (C ) with a load capacitance (C ) connected to the Q pin is given by the following equation, where I is the no-load con-

L

DD

L

is the output frequency.

DD

sumption current and f

I

OUT

–3

(C ) [mA] = I [mA] + C [pF] × V [V] × f [MHz] × 10

OUT

DD

L

DD

L

DD

SEIKO NPC CORPORATION —9

WF5027 series

For Fundamental Oscillator: High frequency version (5027×P to 5027×W)

V

= 1.60 to 3.63V, V = 0V, Ta = −40 to +85°C unless otherwise noted.

SS

DD

Rating

typ

–

Parameter

Symbol

Condition

Unit

min

– 0.4

max

–

HIGH-level output voltage

LOW-level output voltage

HIGH-level input voltage

LOW-level input voltage

V

Q: Measurement cct 3, I = – 4mA

OH

V

OH

DD

V

Q: Measurement cct 3, I = 4mA

OL

–

0.4

–

V

OL

V

INHN, Measurement cct 4

0.7V

–

V

IH

DD

V

–

0.3V

V

IL

DD

V

= V

–

10

–

ꢀA

OH

OL

DD

Q: Measurement cct 5,

INHN = LOW

Output leakage current

I

Z

– 10

–

ꢀA

SS

= 3.3V

–

2.5

2.0

1.6

2.4

1.9

1.5

1.8

1.5

1.2

1.7

1.4

1.1

1.6

1.3

1.0

1.5

1.2

1.0

1.5

1.2

1.0

–

3.8

3.0

2.4

3.6

2.9

2.3

2.7

2.3

1.6

2.6

2.1

1.7

2.4

2.0

1.5

2.3

1.8

1.5

2.3

1.8

1.5

10

mA

ꢀA

5027×P (f ), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

O

f

= 80MHz

OUT

5027×Q (f /2), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

O

f

= 40MHz

OUT

5027×R (f /4), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

O

f

= 20MHz

OUT

5027×S (f /8), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

*1

Current consumption

I

DD

O

f

= 10MHz

OUT

5027×T (f /16), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

O

f

= 5MHz

OUT

5027×V (f /32), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

O

f

= 2.5MHz

OUT

5027×W (f /64), Measurement cct 1,

O

no load, INHN = open, f = 80MHz,

O

f

= 1.25MHz

OUT

Standby current

I

Measurement cct 1, INHN = LOW

Measurement cct 6

ST

R

0.4

30

1.5

70

8

MΩ

kΩ

UP1

INHN pull-up resistance

R

150

UP2

Oscillator feedback

resistance

R

50

100

200

kΩ

f

C

1.6

3.2

2

4

2.4

4.8

pF

G

Design value (a monitor pattern on a wafer is tested),

Excluding parasitic capacitance.

Oscillator capacitance

C

D

*1. The consumption current I (C ) with a load capacitance (C ) connected to the Q pin is given by the following equation, where I is the no-load con-

L

DD

L

is the output frequency.

DD

sumption current and f

I

OUT

–3

(C ) [mA] = I [mA] + C [pF] × V [V] × f [MHz] × 10

OUT

DD

L

DD

L

DD

SEIKO NPC CORPORATION —10

WF5027 series

For 3rd Overtone Oscillator (5027×A to 5027×D)

= 1.60 to 3.63V, V = 0V, Ta = −40 to +85°C unless otherwise noted.

V

DD

SS

Rating

typ

Parameter

Symbol

Condition

Unit

min

max

Q: Measurement cct 3, I = – 8mA,

OH

V

– 0.4

–

V

DD

V

= 2.25 to 3.63V

DD

HIGH-level output voltage

LOW-level output voltage

V

OH

Q: Measurement cct 3, I = – 4mA,

OH

– 0.4

–

V

= 1.60 to 2.25V

DD

Q: Measurement cct 3, I = 8mA,

OL

–

0.4

V

= 2.25 to 3.63V

DD

V

OL

Q: Measurement cct 3, I = 4mA,

OL

–

0.4

–

V

= 1.60 to 2.25V

DD

HIGH-level input voltage

LOW-level input voltage

V

INHN, Measurement cct 4

0.7V

–

V

IH

DD

V

–

0.3V

V

IL

DD

V

= V

–

10

–

ꢀA

OH

OL

DD

Q: Measurement cct 5,

INHN = LOW

Output leakage current

I

Z

– 10

–

ꢀA

SS

= 3.3V

–

3.6

3.0

2.6

3.8

3.2

2.8

4.8

4.0

3.4

5.3

4.4

3.6

–

5.4

4.5

3.9

5.7

4.8

4.2

7.2

6.0

5.1

8.0

6.6

5.4

10

mA

ꢀA

5027×A, Measurement cct 1,

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

= 3.3V

= 2.5V

= 1.8V

no load, INHN = open, f = 48MHz

O

5027×B, Measurement cct 1,

no load, INHN = open, f = 54MHz

O

*1

Current consumption

I

DD

5027×C, Measurement cct 1,

no load, INHN = open, f = 85MHz

O

5027×D, Measurement cct 1,

no load, INHN = open, f = 100MHz

O

Standby current

I

Measurement cct 1, INHN = LOW

Measurement cct 6

ST

R

0.4

30

1.5

70

3.8

3.2

2.8

12

8

MΩ

kΩ

pF

UP1

INHN pull-up resistance

R

150

5.0

4.2

3.7

14.4

9.6

7.2

2.4

14.4

9.6

7.2

UP2

5027×A

5027×B

5027×C

5027×D

2.6

2.2

1.9

9.6

6.4

4.8

1.6

9.6

6.4

4.8

Oscillator feedback

resistance

R

f

5027×A

5027×B

5027×C

5027×D

5027×A

5027×B

5027×C

5027×D

Design value (a monitor pattern on a

wafer is tested),

Excluding parasitic capacitance.

pF

C

G

6

pF

2

pF

Oscillator capacitance

12

8

pF

Design value (a monitor pattern on a

wafer is tested),

Excluding parasitic capacitance.

pF

C

D

pF

6

pF

*1. The consumption current I (C ) with a load capacitance (C ) connected to the Q pin is given by the following equation, where I is the no-load con-

L

DD

L

is the output frequency.

DD

sumption current and f

I

OUT

–3

(C ) [mA] = I [mA] + C [pF] × V [V] × f [MHz] × 10

OUT

DD

L

DD

L

DD

SEIKO NPC CORPORATION —11

WF5027 series

AC Characteristics

For Fundamental Oscillator (5027×1 to 5027×7, 5027×P to 5027×W)

= 1.60 to 3.63V, V = 0V, Ta = −40 to +85°C unless otherwise noted.

V

DD

SS

Rating

typ

2.0

3.0

2.0

3.0

50

Parameter

Symbol

Condition

Unit

min

–

max

4.5

5.0

4.5

5.0

55

t

V

= 2.25 to 3.36V

= 1.60 to 2.25V

= 2.25 to 3.36V

= 1.60 to 2.25V

ns

%

r1

DD

Measurement cct 1, C = 15pF,

L

Output rise time

Output fall time

0.1V to 0.9V

DD

t

–

r2

t

–

f1

Measurement cct 1, C = 15pF,

L

0.9V to 0.1V

DD

t

–

f2

Output duty cycle

Duty

Measurement cct 1, Ta = 25°C, C = 15pF

45

–

L

Output disable delay time

t

Measurement cct 2, Ta = 25°C, C ≤ 15pF

–

50

µs

OD

L

For 3rd Overtone Oscillator (5027×A to 5027×D)

= 1.60 to 3.63V, V = 0V, Ta = −40 to +85°C unless otherwise noted.

V

DD

SS

Rating

typ

1.2

1.6

1.2

1.6

50

Parameter

Symbol

Condition

Unit

min

–

max

3.0

4.0

3.0

4.0

55

t

V

= 2.25 to 3.36V

= 1.60 to 2.25V

= 2.25 to 3.36V

= 1.60 to 2.25V

ns

%

r1

DD

Measurement cct 1, C = 15pF,

L

Output rise time

Output fall time

0.1V to 0.9V

DD

t

–

r2

t

–

f1

Measurement cct 1, C = 15pF,

L

0.9V to 0.1V

DD

t

–

f2

Output duty cycle

Duty

Measurement cct 1, Ta = 25°C, C = 15pF

45

–

L

Output disable delay time

t

Measurement cct 2, Ta = 25°C, C ≤ 15pF

–

50

µs

OD

L

Timing chart

Q

0.9VDD

DUTY measurement

voltage (0.5V^DD)

TW

0.1V^DD

0.1VDD

T

DUTY= TW/ T 100 (%)

tr

tf

Figure 1. Output switching waveform

VIH

INHN

VIL

tOD

tSTR

0.1V

Q

Normal

operation

Output

stopped

Normal

operation

Hi-Z*

When INHN goes HIGH to LOW, the Q output goes HIGH once and then becomes high impedance.

When INHN goes LOW to HIGH, the Q output goes from high impedance to normal output operation when the oscillation starts (oscillation is detected).

*) The high-impedance interval in the ﬁgure is shown as a LOW level due to the 1kΩ pull-down resistor connected to the Q pin (see "Measurement circuit

2" in the "Measurement Circuits" section).

Figure 2. Output disable and oscillation start timing chart

SEIKO NPC CORPORATION —12

WF5027 series

FUNCTIONAL DESCRIPTION

Standby Function

When INHN goes LOW, the Q output becomes high impedance.

INHN

HIGH (or open)

LOW

Q

Oscillator

Normal operation

Stopped

Frequency output

High impedance

Power-saving Pull-up Resistor

The INHN pin pull-up resistance R

or R

changes in response to the input level (HIGH or LOW). When

UP1

UP2

INHN is tied LOW level, the pull-up resistance is large (R ), reducing the current consumed by the resis-

UP1

tance. When INHN is left open circuit, the pull-up resistance is small (R ), which increases the input suscep-

UP2

tibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external

noise from unexpectedly stopping the output.

Oscillation Detector Function

The WF5027 series also feature an oscillation detector circuit. This circuit functions to disable the outputs until

the oscillator circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator out-

put at oscillator start-up when power is applied or when INHN is switched.

SEIKO NPC CORPORATION —13

WF5027 series

MEASUREMENT CIRCUITS

Measurement cct 1

Measurement cct 4

Measurement parameter: I , I , Duty, t , t

Measurement parameter: V , V

DD ST

r

f

IH IL

I

DD

ST

A

VDD

XT

0.1µF

IDD: Open

X'tal

Q

X'tal

Q

0.1µF

XTN

INHN VSS

CL = 15pF

V

IH

(Including probe

V

I

DD: Open

ST: Short

IL

capacitance)

Note: The AC characteristics are observed using an oscilloscope on

pin Q.

V : Voltage in V to V transition that changes the output state.

IH SS DD

V : Voltage in V to V transition that changes the output state.

IL

DD

SS

INHN has an oscillation stop function.

Measurement cct 2

Measurement parameter: t

Measurement cct 5

Measurement parameter: I

OD

Z

VDD

0.1µF

V

DD

or

SS

0.1µF

Q

A

C1

Signal

Generator

V

XTN

CL

RL

IZ

INHN VSS

R1

V

DD

or

SS

V

XTN input signal: 1Vp-p, sine wave

C : 15pF

Measurement cct 6

C1: 0.001µF

R1: 50Ω

L

Measurement parameter: R , R

UP1 UP2

R : 1kΩ

L

Measurement cct 3

VDD

Measurement parameter: V , V

OH OL

0.1µF

INHN VSS

VDD

VSS

50Ω

Q

V

DD

0.001µF

50Ω

R

UP1

UP2

=

Signal

Generator

IUP

(VIN = 0V)

A

XTN

IUP

VIN

V

VOH

0.1µF

VS

V

DD 0.7VDD

VOL

(V^IN= 0.7VDD

)

IUP

∆V

VOH

VS

VOL

∆V

V

50 × I

adjusted such that ∆V =

OH

V adjusted such that ∆V =

S

50 × I .

OL

S

.

XTN input signal: 1Vp-p, sine wave

SEIKO NPC CORPORATION —14

WF5027 series

TYPICAL PERFORMANCE (for fundamental oscillator)

The following characteristics measured using the crystal below. Note that the characteristics will vary with the

crystal used.

ꢀ Crystal used for measurement

ꢀ Crystal parameters

Parameter

C0 [pF]

f

= 48MHz

1.6

f

= 80MHz

2.1

C1

C0

L1

R1

O

R1 [Ω]

12

10

Current Consumption

10

8

10

8

6

C^L= 15pF

CL = 0pF

4

2

0

4

CL = 15pF

2

CL = 0pF

0

1.5

2

2.5

3

3.5

4

1.5

2

2.5

3

3.5

4

VDD [V]

5027A1, f

= 48MHz, Ta = 25°C

5027AP, f

= 80MHz, Ta = 25°C

OUT

Negative Resistance

Frequency [MHz]

30 40

Frequency [MHz]

10

20

50

60

50

60

70

80

90

100

0

–200

–400

C0 = 2pF

C0 = 1pF

–400

–600

–800

C0 = 2pF

C0 = 0pF

–1000

C0 = 1pF

5027×1 to ×7, V = 3.3V, Ta = 25°C

5027×P to ×W, V = 3.3V, Ta = 25°C

DD

Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the

XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig

and measurement conditions.

SEIKO NPC CORPORATION —15

WF5027 series

Frequency Deviation by Supply Voltage Change

1

0.5

0

1

0.5

0

–0.5

–1

–0.5

–1

1.6

2.1

2.6

3.1

3.6

1.6

2.1

2.6

3.1

3.6

VDD [V]

5027×1 to ×7, f

= 48MHz,

3.3V standard, Ta = 25°C

5027×P to ×W, f

= 80MHz,

3.3V standard, Ta = 25°C

OUT

Drive Level

50

40

50

40

30

20

30

20

10

0

1.5

2

2.5

3

3.5

4

1.5

2

2.5

3

3.5

4

VDD [V]

5027×1 to ×7, f

= 48MHz, Ta = 25°C

5027×P to ×W, f

= 80MHz, Ta = 25°C

OUT

Phase Noise

Measurement equipment: Agilent E5052 Signal Source Analyzer

–40

–60

–40

–60

–80

–100

–120

–100

–120

–140

–160

–140

–160

10

100

1,000

10,000

100,000 1,000,000 10,000,000

10

100

1,000

10,000

100,000 1,000,000 10,000,000

Offset frequency [Hz]

5027A1, V = 3.3V, f

= f

= 48MHz,

5027AP, V = 3.3V, f

= f

= 80MHz,

DD

OSC

OUT

DD

OSC

OUT

Ta = 25°C

SEIKO NPC CORPORATION —16

WF5027 series

Output Waveform

Measurement equipment: Agilent 54855A Oscilloscope

5027A1, V = 3.3V, f

= 48MHz,

5027AP, V = 3.3V, f

= 80MHz,

DD

OUT

DD

OUT

C = 15pF, Ta = 25°C

L

SEIKO NPC CORPORATION —17

WF5027 series

TYPICAL PERFORMANCE (for 3rd overtone oscillator)

The following characteristics measured using the crystal below. Note that the characteristics will vary with the

crystal used.

ꢀ Crystal used for measurement

ꢀ Crystal parameters

Parameter

C0 [pF]

f

= 85MHz

0.9

f

= 100MHz

O

C1

C0

L1

R1

O

1.2

45

R1 [Ω]

56

Current Consumption

12

10

8

12

10

8

C^L= 15pF

C^L= 0pF

C^L= 15pF

6

4

2

4

CL = 0pF

2

0

1.6

2.2

2.8

VDD [V]

3.4

4

1.6

2.2

2.8

3.4

4

VDD [V]

5027×D, f

= 85MHz, Ta = 25°C

5027AP, f

= 100MHz, Ta = 25°C

OUT

Negative Resistance

Frequency [MHz]

80 120

1.8V

2.5V

3.3V

0

40

160

200

0

1.8V

2.5V

3.3V

C0 = 2pF

1.8V

2.5V

3.3V

–200

C0 = 1pF

–400

–600

C0 = 0pF

–800

1.8V

2.5V

3.3V

–1000

5027×D, Ta = 25°C, recommended operating frequency

range: 85MHz to 110MHz

Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the

XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig

and measurement conditions.

SEIKO NPC CORPORATION —18

WF5027 series

Frequency Deviation by Supply Voltage Change

1

0.5

0

1

0.5

0

–0.5

–1

–0.5

–1

1.6

2.1

2.6

3.1

3.6

1.6

2.1

2.6

3.1

3.6

VDD [V]

5027×D, f

= 85MHz, 3.3V standard, Ta = 25°C

5027×D, f

= 100MHz, 3.3V standard, Ta = 25°C

OUT

Drive Level

200

150

200

150

100

50

100

50

0

1.5

2

2.5

3

3.5

4

1.5

2

2.5

3

3.5

4

V

DD [V]

VDD [V]

5027×D, f

= 85MHz, Ta = 25°C

5027×D, f

= 100MHz, Ta = 25°C

OUT

Phase Noise

Measurement equipment: Agilent E5052 Signal Source Analyzer

–40

–60

–40

–60

–80

–100

–120

–100

–120

–140

–160

–140

–160

10

100

1,000

10,000

100,000 1,000,000 10,000,000

10

100

1,000

10,000

100,000 1,000,000 10,000,000

Offset frequency [Hz]

5027×D, V = 3.3V, f

= f

Ta = 25°C

= 85MHz,

5027×D, V = 3.3V, f

= f

Ta = 25°C

= 100MHz,

DD

OSC

OUT

DD

OSC

OUT

SEIKO NPC CORPORATION —19

WF5027 series

Output Waveform

Measurement equipment: Agilent 54855A Oscilloscope

5027×D, V = 3.3V, f

= 85MHz,

C = 15pF, Ta = 25°C

5027×D, V = 3.3V, f

= 100MHz,

C = 15pF, Ta = 25°C

DD

OUT

DD

OUT

L

SEIKO NPC CORPORATION —20

WF5027 series

Please pay your attention to the following points at time of using the products shown in this document.

The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful inﬂuence on

human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such

use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and

harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right

to change the speciﬁcations of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that

the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties.

Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document.

Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products,

and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or

modiﬁcation. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in

compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested

appropriately take steps to obtain required permissions or approvals from appropriate government agencies.

SEIKO NPC CORPORATION

15-6, Nihombashi-kabutocho, Chuo-ku,

Tokyo 103-0026, Japan

Telephone: +81-3-6667-6601

Facsimile: +81-3-6667-6611

http://www.npc.co.jp/

Email: sales@npc.co.jp

NC0505CE 2007.03

SEIKO NPC CORPORATION —21


型号：	CF5027A1-4
厂家：	NIPPON PRECISION CIRCUITS INC
描述：	Crystal Oscillator Module ICs 晶体振荡器模块集成电路振荡器晶体振荡器 PC
文件：	总21页 (文件大小：814K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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