PRHMB200A6A [NIEC]
IGBT MODULE Chopper 200A 600V; IGBT模块斩波200A 600V型号: | PRHMB200A6A |
厂家: | NIHON INTER ELECTRONICS CORPORATION |
描述: | IGBT MODULE Chopper 200A 600V |
文件: | 总3页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IGBT MODULE Chopper 200A 600V
PRHMB200A6A
CIRCUIT
OUTLINEDRAWING
2- fasten- tab No 110
Dimension(mm)
Approximate Weight : 320g
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
Collector Current
1 ms
Symbol
VCES
VGES
IC
PRHMB200A6A
Unit
V
V
600
+/ - 20
200
A
IC
400
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
PC
780
-40 to +150
-40 to +125
2500
W
°C
°C
V
T
j
Tstg
VISO
Module Base to Heat sink
Bus Bar to Main Terminals
3.06
2.04
Mounting Torque
FTOR
N•m
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
ICES
IGES
VCE(sat)
VGE(th)
C ies
t
r
t
on
t
f
t
off
VCE=600V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=200A,VGE=15V
VCE=5V,IC=200mA
-
-
-
4.0
-
-
-
-
-
-
-
2.1
-
20000
0.15
0.25
0.2
0.45
2.0
1.0
2.6
8.0
-
mA
µA
V
V
pF
VCE=10V,VGE=0V,f=1MHz
Rise Time
0.3
0.4
0.35
0.7
VCC= 300V
RL= 3 ohm
RG= 3.6 ohm
VGE= +/- 15V
Turn-on Time
Switching Time
µs
Fall Time
Turn-off Time
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
IF
IFM
Rated Value
Unit
A
DC
1 ms
200
400
Forward Current
Characteristic
Symbol
VF
Test Condition
Min.
Typ.
Max.
2.4
Unit
V
Peak Forward Voltage
IF=200A,VGE=0V
-
1.9
Reverse Recovery Time
trr
-
0.15
0.25
IF=200A,VGE=-10V,di/dt=200A/µs
µs
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Condition
Junction to Case
Min.
-
-
Typ.
-
-
Max.
0.16
0.38
Unit
IGBT
DIODE
Thermal Impedance
R
th(j-c)
°C/W
IGBTMODULE Chopper 200A 600V
PRHMB200A6A
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.1- Output Characteristics (Typical)
TC=25℃
TC=25℃
400
300
200
100
0
16
14
12
10
8
VGE=20V
12V
15V
400A
IC=80A
200A
10V
EC
eV
C
g
a
I
t
t
l
o
V
r
ren
u
e
t
9V
t
i
rC
m
to
6
c
E
o
e
l
l
t
r
o
C
o
4
cet
l
l
8V
7V
2
oC
0
0
2
4
6
8
10
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
400
16
16
14
12
10
8
RL=1.5Ω
TC=25℃
IC=80A
200A
400A
350
300
250
200
150
100
50
14
12
10
8
G
a
te
CE
EC
t
o
V
V
e
E
e
g
a
m
t
l
ga
i
t
t
o
te
o
r
V
rV
V
r
e
t
o
te
i
l
t
t
VCE=300V
a
g
e
m
m
6
6
E
E
o
t
V
o
t
200V
100V
GE
r
r
to
o
t
4
4
c
e
l
l
elc
o
C
o
C
2
2
0
0
0
0
4
8
12
16
20
0
150
300
450
600
750
900
Gate to Emitter Voltage VGE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
Fig.6- Collector Current vs. Switching Time (Typical)
100000
50000
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGE=0V
f=1MHZ
TC=25℃
VCC=300V
RG=3.6Ω
VGE=±15V
TC=25℃
Cies
Coes
Cres
20000
10000
t
e
5000
C
e
m
i
c
toff
T
g
a
t
2000
1000
500
n
ci
hci
pa
t
i
w
S
Ca
ton
tf
200
100
tr
0.2
0.5
1
2
5
10
20
50
100
200
0
50
100
150
200
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
IGBTMODULE Chopper 200A 600V
PRHMB200A6A
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
400
350
300
250
200
150
100
50
VCC=300V
IC=200A
VG=±15V
TC=25℃
TC=25℃
TC=125℃
toff
2
1
ton
tr
F
I
t
e
net
m
i
r
r
0.5
u
tf
T
g
C
n
i
d
r
h
c
a
t
i
w
r
0.2
0.1
o
F
Sw
0.05
0
1
10
100
0
1
2
3
4
Forward Voltage VF (V)
Series Gate Impedance RG (Ω)
Fig.10- Reverse Bias Safe Operating Area (Typical)
Fig.9- Reverse Recovery Characteristics (Typical)
1000
500
500
RG=3.6Ω
VGE=±15V
TC≦125℃
IF=200A
TC=25℃
200
100
50
M
200
100
50
Rr
trr
I
r
r
ent
t
e
r
r
C
I
u
m
i
20
10
5
C
y
r
ent
T
r
y
r
e
v
ve
uCr
o
c
e
r
o
eco
t
R
e
R
e
l
l
2
1
s
r
20
10
5
s
r
e
v
e
IRrM
oC
ve
e
R
0.5
R
k
a
e
0.2
0.1
P
0
200
400
600
800
0
200
400
600
800
1000
1200
Collector to Emitter Voltage V CE (V)
-di/dt (A/μs)
Fig.11- Transient Thermal Impedance
5x10 -1
FRD
2x10 -1
1x10 -1
5x10 -2
IGBT
h
t
R
e
c
n
2x10 -2
1x10 -2
5x10 -3
epda
m
I
l
a
m
ehr
T
TC=25℃
2x10 -3
1x10 -3
net
i
s
n
1 Shot Pulse
a
r
T
10-5
10-4
10-3
10-2
10-1
1
101
Time t (s)
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