PSMN057-200B [NEXPERIA]

N-channel TrenchMOS SiliconMAX standard level FETProduction;


型号：	PSMN057-200B
厂家：	Nexperia
描述：	N-channel TrenchMOS SiliconMAX standard level FETProduction 开关脉冲晶体管
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PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

27 March 2023

Product data sheet

1. General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

2. Features and benefits

•

Higher operating power due to low thermal resistance

•

Low conduction losses due to low on-state resistance

Suitable for high frequency applications due to fast switching characteristics

3. Applications

•

DC-to-DC converters

Switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

200

27.5

250

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

T_mb= 100 °C

I_D

P_tot

total power dissipation T_mb= 25 °C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 17 A; T_j= 175 °C

165

mΩ

Q_GD

gate-drain charge

I_D= 39 A; V_DS= 160 V; V_GS= 10 V;

T_j= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

gate

Simplified outline

Graphic symbol

drain

source

mounting base; connected

to drain

mbb076

D2PAK (SOT404)

Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PSMN057-200B

D2PAK

plastic, single-ended surface-mounted package (D2PAK); SOT404

3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10

mm x 4.3 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN057

200B

PSMN057-200B

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

200

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

total power dissipation

drain current

25 °C ≤ T_j≤ 175 °C

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

V_DGR

V_GS

-20

P_tot

T_mb= 25 °C

250

27.5

I_D

T_mb= 100 °C

T_mb= 25 °C

I_DM

T_stg

T_j

peak drain current

storage temperature

junction temperature

pulsed; T_mb= 25 °C

156

175

-55

°C

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

I_SM

pulsed; T_mb= 25 °C

156

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-

I_D= 23 A; V_sup≤ 50 V; R_GS= 50 Ω;

source avalanche energy V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 240 µs

925

I_AS

non-repetitive avalanche V_sup≤ 50 V; V_GS= 10 V; T_j(init)= 25 °C;

current

R_GS= 50 Ω; unclamped

PSMN057-200B

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Product data sheet

27 March 2023

2 / 10

Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

003aae646

003aae647

100

der

(%)

100

150

200

100

150

200

(°C)

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Normalized continuous drain current as a

function of mounting base temperature

003aae648

003aae628

(A)

DS(on)

= V / I

DS D

tp = 10 µs

100 µs

1 ms

25°C

D.C.

T prior to avalanche = 150 °C

10 ms

100 ms

-3

-2

-1

(V)

(ms)

T_mb= 25 °C; I_DMis single pulse

unclamped inductive load

Fig. 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage

Fig. 4. Single-shot avalanche rating; avalanche current

as a function of avalanche period

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance from

junction to mounting

base

0.6

K/W

R_th(j-a)

thermal resistance from minimum footprint; FR4 board

junction to ambient

K/W

PSMN057-200B

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Product data sheet

27 March 2023

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Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

003aae649

th(j-mb)

δ = 0.5

0.2

(K/W)

- 1

0.1

0.05

δ =

0.02

- 2

- 3

single pulse

- 6

- 5

- 4

- 3

- 2

- 1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= 0.25 mA; V_GS= 0 V; T_j= 25 °C

I_D= 0.25 mA; V_GS= 0 V; T_j= -55 °C

200

178

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 175 °C

voltage

I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

I_D= 1 mA; V_DS=V_GS; T_j= -55 °C

4.4

500

100

165

4.1

I_DSS

I_GSS

R_DSon

R_G

drain leakage current

gate leakage current

V_DS= 200 V; V_GS= 0 V; T_j= 175 °C

V_DS= 200 V; V_GS= 0 V; T_j= 25 °C

V_GS= 10 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; V_DS= 0 V; T_j= 25 °C

V_GS= 10 V; I_D= 17 A; T_j= 175 °C

V_GS= 10 V; I_D= 17 A; T_j= 25 °C

f = 1 MHz

µA

mΩ

0.03

drain-source on-state

resistance

gate resistance

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

I_D= 39 A; V_DS= 160 V; V_GS= 10 V;

T_j= 25 °C

135

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= 25 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C

3750 5036 pF

C_oss

C_rss

385

180

520

252

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 100 V; R_L= 2.7 Ω; V_GS= 10 V;

R_G(ext)= 5.6 Ω; T_j= 25 °C

turn-off delay time

fall time

105

L_D

internal drain

inductance

measured from tab to centre of die;

T_j= 25 °C

3.5

L_S

internal source

inductance

measured from source lead to source

bond pad; T_j= 25 °C

7.5

PSMN057-200B

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Product data sheet

27 March 2023

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Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C

0.85

133

895

1.2

173

reverse recovery time I_S= 20 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 30 V; T_j= 25 °C

Q_r

recovered charge

003aae650

003aae651

0.14

(V) = 10

4.2 4.4 4.6

(A)

DS(on)

(Ω)

0.1

0.06

0.02

5.2

4.8

4.6

5.2

4.4

4.2

(V) = 10

0.4

0.8

1.2

1.6

(V)

I (A)

T_j= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig. 7. Drain-source on-state resistance as a function

of drain current; typical values

003aae652

003aae653

(S)

(A)

T = 25 °C

T = 175 °C

T = 25 °C

(V)

I (A)

V_DS> I_Dx R_DSon

Fig. 8. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig. 9. Forward transconductance as a function of

drain current; typical values

003aae654

003aae655

2.9

GS(th)

(V)

maximum

2.1

typical

minimum

1.3

0.5

- 60

100

180

- 60

100

180

T (°C)

I_D= 1 mA; V_DS= V_GS

Fig. 11. Gate-source threshold voltage as a function of

junction temperature

Fig. 10. Normalized drain-source on-state resistance

factor as a function of junction temperature

PSMN057-200B

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Product data sheet

27 March 2023

5 / 10

Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

003aae656

003aae657

- 1

(A)

iss

- 2

- 3

- 4

- 5

- 6

(pF)

minimum

typical

maximum

oss

rss

- 1

(V)

T_j= 25 °C; V_DS= V_GS

V_GS= 0 V; f = 1 MHz

Fig. 12. Sub-threshold drain current as a function of

gate-source voltage

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aae658

003aae659

(V)

(A)

= 40 V

= 160 V

T = 25 °C

T = 175 °C

120

160

0.4

0.8

1.2

(nC)

(V)

SDS

V_GS= 0 V

T_j= 25 °C; I_D= 39 A

Fig. 15. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

PSMN057-200B

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Product data sheet

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Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

11. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

mounting

base

5 mm

scale

Dimensions (mm are the original dimensions)

Unit

max 4.5 1.40 0.85 1.45 0.64 11

nom

min 4.1 1.27 0.60 1.05 0.46

1.6 10.3

1.2 9.7

15.8 2.9 2.6

14.8 2.1 2.2

2.54

sot404_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

06-03-16

13-02-25

SOT404

Fig. 16. Package outline D2PAK (SOT404)

PSMN057-200B

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Product data sheet

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Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

12. Soldering

Footprint information for reflow soldering of D2PAK package

SOT404

10.85

10.60

10.50

0.30

1.50

2.25 2.15

8.275

8.15

8.35

1.50

4.60

16.35

0.30

0.20

1.70

7.40

7.50

4.85

5.40

7.95

8.075

3.10 3.00

0.20

1.55

2.54

1.30

1.20

occupied area

solder resist (0.05 mm gap from solder land on all directions)

solder paste

solder lands

Dimensions in mm

19-09-10

Issue date

sot404_fr

19-09-11

Fig. 17. Reflow soldering footprint for D2PAK (SOT404)

PSMN057-200B

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Product data sheet

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Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

13. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Nexperia product is suitable

and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Nexperia products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Nexperia does not accept any

liability in this respect.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the relevant

full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of commercial sale — Nexperia products are

sold subject to the general terms and conditions of commercial sale, as

published at http://www.nexperia.com/profile/terms, unless otherwise agreed

in a valid written individual agreement. In case an individual agreement is

concluded only the terms and conditions of the respective agreement shall

apply. Nexperia hereby expressly objects to applying the customer’s general

terms and conditions with regard to the purchase of Nexperia products by

customer.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be

valid in which the Nexperia product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

No offer to sell or license — Nothing in this document may be interpreted

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Export control — This document as well as the item(s) described herein

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Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no responsibility

for the content in this document if provided by an information source outside

of Nexperia.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified, the

product is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In no event shall Nexperia be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s own risk,

and (c) customer fully indemnifies Nexperia for any liability, damages or failed

product claims resulting from customer design and use of the product for

automotive applications beyond Nexperia’s standard warranty and Nexperia’s

product specifications.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Nexperia.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Right to make changes — Nexperia reserves the right to make changes

to information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Trademarks

Suitability for use — Nexperia products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction

of an Nexperia product can reasonably be expected to result in personal

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

PSMN057-200B

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Product data sheet

27 March 2023

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Nexperia

PSMN057-200B

N-channel TrenchMOS SiliconMAX standard level FET

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................1

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 3

10. Characteristics............................................................4

11. Package outline.......................................................... 7

12. Soldering..................................................................... 8

13. Legal information........................................................9

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 27 March 2023

PSMN057-200B

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Product data sheet

27 March 2023

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PSMN057-200B [NEXPERIA]

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