PMPB14R8XN [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;型号: | PMPB14R8XN |
厂家: | Nexperia |
描述: | 30 V, N-channel Trench MOSFETProduction |
文件: | 总14页 (文件大小:301K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMPB14R8XN
30 V, N-channel Trench MOSFET
24 October 2022
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
•
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
3. Applications
•
•
•
•
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
12
V
ID
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 7.3 A; Tj = 25 °C
[1]
10
A
Static characteristics
RDSon drain-source on-state
resistance
-
14.8
18.4
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
D
D
G
S
D
D
D
S
2
drain
1
6
5
4
D
3
gate
7
2
4
source
drain
G
mbb076
3
8
5
6
drain
S
Transparent top view
7
drain
DFN2020M-6 (SOT1220-2)
8
source
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB14R8XN
DFN2020M-6 plastic thermal enhanced ultra thin small outline package; SOT1220-2
no leads; 6 terminals; body 2 x 2 x 0.65 mm
7. Marking
Table 4. Marking codes
Type number
Marking code
ZY
PMPB14R8XN
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PMPB14R8XN
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Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
12
V
ID
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C; t ≤ 5 s
[1]
[1]
[1]
-
10
A
-
7.3
4.6
100
1
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[1]
[1]
-
W
W
W
°C
°C
°C
Tamb = 25 °C
-
1.5
18
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
1.5
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-030137
aaa-030138
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
(°C)
-25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
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PMPB14R8XN
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Product data sheet
24 October 2022
3 / 14
Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
aaa-035070
3
10
I
D
(A)
Limit R
= V /I
DS
DSon
D
2
10
t
= 10 µs
p
10
100 µs
1 ms
1
-1
DC; T = 25 °C
sp
10
10 ms
2
-2
DC; T
1
= 25 °C; 6 cm
amb
10
10
100 ms
-3
-1
10
2
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
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PMPB14R8XN
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Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
200
65
Max
250
85
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
33
42
Rth(j-sp)
thermal resistance from
junction to solder point
5.6
7
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-035071
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
1
-3
10
-2
10
-1
10
2
3
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-035072
2
10
duty cycle = 1
0.75
Z
0.5
th(j-a)
(K/W)
0.33
0.2
0.25
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
10
-1
10
2
3
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PMPB14R8XN
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Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.4
0.65
0.9
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 7.3 A; Tj = 25 °C
VGS = 4.5 V; ID = 7.3 A; Tj = 150 °C
VGS = 2.5 V; ID = 6.3 A; Tj = 25 °C
VGS = 1.8 V; ID = 5.2 A; Tj = 25 °C
VDS = 5 V; ID = 7.3 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
1
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
100
-100
18.4
28
-
RDSon
drain-source on-state
resistance
14.8
23
18.4
24.6
17.9
24.2
34.8
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
2.1
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 7.3 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
4.3
0.7
0.9
500
88
6.5
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
30
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 7.3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
3
-
-
-
-
ns
ns
ns
ns
5
turn-off delay time
fall time
10
5
Source-drain diode
VSD
source-drain voltage
IS = 1.5 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
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PMPB14R8XN
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Product data sheet
24 October 2022
6 / 14
Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
aaa-035073
aaa-035074
-3
-4
-5
-6
7
10
D
I
D
1.4 V
(A)
I
1.8 V
2.5 V
4.5 V
6
5
4
3
2
1
0
(A)
10
min
typ
max
10
10
V
= 1.2 V
GS
0
0.5
1.0
1.5
0
1
2
3
4
5
V
(V)
GS
V
(V)
DS
Tj = 25 °C
VDS = 5 V; Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-035075
aaa-035076
100
100
1.4 V
R
R
DSon
(mΩ)
DSon
(mΩ)
80
80
60
60
40
40
1.8 V
T = 150 °C
j
2.5 V
= 4.5 V
20
20
0
V
6
GS
T = 25 °C
j
0
0
2
4
8
0
2
4
6
8
10
V
12
(V)
I
(A)
D
GS
Tj = 25 °C
ID = 7.3 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
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PMPB14R8XN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
aaa-035077
aaa-035065
10
2
1.5
1
I
D
a
(A)
8
6
4
2
0
0.5
T = 150 °C
T = 25 °C
j
j
0
-60
0
0.5
1
1.5
2
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = 5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-035079
aaa-035078
3
1.5
10
V
GS(th)
(V)
C
(pF)
C
iss
1
0.5
0
max
typ
2
10
C
C
oss
rss
min
10
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
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PMPB14R8XN
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Nexperia B.V. 2022. All rights reserved
Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
aaa-035080
5
V
GS
(V)
V
DS
4
3
2
1
0
I
D
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GS
GD
Q
G(tot)
0
2
4
6
Q
(nC)
G
003aaa508
ID = 7.3 A; VDS = 15 V; Tj = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-035081
2
I
S
(A)
1.5
1
0.5
0
T = 150 °C
T = 25 °C
j
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
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Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
12. Package outline
DFN2020M-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220-2
*(6x)
B
E
A
pin 1
index area
A
D
A
1
detail X
u
C
2x
u
C
2x
seating plane
C
v
w
B
A
C
E
(6x)
L
2
y
1
y
C
C
C
4
5
6
3
2
D
2
b (6x)
K
e
1
v
B
A
C
C
e
w
e
2
D
1
e
1
pin 1
index area
Gx45°
X
E
1
0
2 mm
G
scale
e
Dimensions (mm are the original dimensions)
Unit
A
A
b
D
2
D
D
E
2
E
E
e
e
2
K
L
u
v
w
y
y
1
1
1
2
1
2
1
min 0.55
0
0.25
1.0
1.1
1.2
0.31
0.36
0.41
1.1 0.6
1.2 0.7 0.65 0.71 0.28
1.3 0.8
0.2 0.20
0.15
(ref)
nom
max
mm
0.60 0.02 0.30
0.65 0.04 0.35
0.25 0.05 0.1 0.05 0.05 0.05
0.30
Note
1. Dimension A is including plating thickness.
2. * Visible depend upon used manufacturing technology.
sot1220-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
- - -
JEITA
20-03-31
20-04-01
SOT1220-2
Fig. 18. Package outline DFN2020M-6 (SOT1220-2)
©
PMPB14R8XN
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Product data sheet
24 October 2022
10 / 14
Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020M-6 package
SOT1220-2
2.6
1.3
1.2
0.2
0.5
0.4
0.3
0.45
0.05
0.45 0.35 0.25
0.2 0.3
0.4
0.2 1.1 1.2
2.3
0.65
0.21 0.11
0.36 0.46 0.56
0.7
0.8
0.9
recommended stencil thickness: 0.1 mm
occupied area
solder resist
solder paste
solder land
Dimensions in mm
20-03-17
20-06-17
Issue date
sot1220-2_fr
Fig. 19. Reflow soldering footprint for DFN2020M-6 (SOT1220-2)
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PMPB14R8XN
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Product data sheet
24 October 2022
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20221024
Data sheet status
Change notice
Supersedes
PMPB14R8XN v.1
Product data sheet
-
-
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PMPB14R8XN
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Product data sheet
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Product data sheet
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Nexperia
PMPB14R8XN
30 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
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Date of release: 24 October 2022
©
PMPB14R8XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
24 October 2022
14 / 14
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