PMPB15XN [NEXPERIA]
20 V, single N-channel Trench MOSFETProduction;
| 型号： | PMPB15XN |
| 厂家： | 
Nexperia |
| 描述： | 20 V, single N-channel Trench MOSFETProduction 开关 脉冲 光电二极管 晶体管 |
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PMPB15XN
20 V, single N-channel Trench MOSFET
13 September 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Trench MOSFET technology
•
•
•
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
•
•
•
•
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
20
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-12
-
12
V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 7.3 A; Tj = 25 °C
[1]
10.4
A
Static characteristics
RDSon drain-source on-state
resistance
-
18
21
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
4
5
6
7
8
D
D
G
S
D
D
D
S
drain
drain
gate
1
6
5
4
7
2
3
Transparent top view
G
8
S
source
drain
drain
drain
source
017aaa253
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMPB15XN
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB15XN
1J
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
20
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
V
A
A
A
A
W
VGS
-12
12
ID
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
10.4
7.3
4.6
24
VGS = 4.5 V; Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
-
1.7
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
2 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
-
Max
3.5
Unit
W
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
[1]
-
12.5
150
150
150
W
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
2
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
3 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
017aaa794
2
10
I
D
Limit R
= V /I
DS
DSon
D
(A)
10
t
= 100 µs
= 1 ms
p
t
p
p
1
t
= 10 ms
DC; T = 25 °C
sp
t
= 100 ms
p
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
-1
2
10
10
-2
-2
-1
2
10
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
235
67
Max
270
74
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
33
36
Rth(j-sp)
thermal resistance
from junction to solder
point
5
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
4 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
017aaa542
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.4
0.65
-
0.9
IDSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
nA
IGSS
VGS = -12 V; VDS = 0 V; Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
13 September 2012
-
-100
©
PMPB15XN
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
-
Max
100
21
32
27
41
-
Unit
nA
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 7.3 A; Tj = 25 °C
VGS = 4.5 V; ID = 7.3 A; Tj = 150 °C
VGS = 2.5 V; ID = 6.4 A; Tj = 25 °C
VGS = 1.8 V; ID = 2.1 A; Tj = 25 °C
VDS = 10 V; ID = 7.3 A; Tj = 25 °C
-
-
-
-
-
-
RDSon
drain-source on-state
resistance
18
27
21
23
30
mΩ
mΩ
mΩ
mΩ
S
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
2
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
13.4
1.5
20.2
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
2.6
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
1240
145
125
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
9
-
-
-
-
ns
ns
ns
ns
24
31
36
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
IS = 2 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
017aaa795
017aaa796
-2
28
10
4.5 V
2.5 V
2.1 V
2 V
I
D
I
D
(A)
(A)
24
V
= 1.8 V
GS
-3
-4
-5
-6
10
20
16
12
8
1.6 V
min
typ
max
10
10
10
1.4 V
1.2 V
3
4
0
0
1
2
4
0
0.4
0.8
1.2
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
6 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
017aaa797
017aaa798
0.1
0.10
1.5 V 1.6 V 1.7 V 1.8 V
2 V
R
R
DSon
(Ω)
DSon
(Ω)
0.8
0.6
0.4
0.2
0
0.08
0.06
0.04
0.02
0
2.2 V
T = 150 °C
j
2.5 V
V
= 4.5 V
GS
T = 25 °C
j
0
8
16
24
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 6 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
017aaa799
017aaa800
24
1.50
a
I
D
(A)
1.25
16
1.00
0.75
0.50
8
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
7 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
017aaa801
017aaa802
4
3
2
1.5
10
C
(pF)
V
GS(th)
(V)
C
iss
1.0
0.5
0
10
max
typ
C
C
oss
10
rss
min
10
10
-1
2
-75
-25
25
75
125
175
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
017aaa803
4.5
V
DS
V
GS
(V)
I
D
3.0
V
GS(pl)
V
GS(th)
GS
V
1.5
Q
GS1
Q
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
Fig. 15. Gate charge waveform definitions
0
5
10
15
Q
G
(nC)
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
8 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
017aaa804
2.0
I
S
(A)
1.5
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
0.2
0.4
0.6
0.8
1.0
(V)
V
DS
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
9. Package outline
0.51
0.61
0.2
0.3
0.2
0.3
3
4
5
6
0.25
0.35
1.9
2.1
2
1
1.0
1.2
1.1
1.3
0.65
1.9
2.1
Dimensions in mm
12-04-30
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
9 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
10 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB15XN v.1
20120913
Product data sheet
-
-
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
11 / 12
Nexperia
PMPB15XN
20 V, single N-channel Trench MOSFET
13. Contents
1
Product profile ....................................................... 1
1.1
1.2
1.3
1.4
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
2
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Test information .....................................................9
Package outline ..................................................... 9
Soldering .............................................................. 10
Revision history ...................................................11
3
4
5
6
7
8
9
10
11
12
Legal information ............................................
Data sheet status ...........................................
Definitions ......................................................
Disclaimers ....................................................
Trademarks ...................................................
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 13 September 2012
©
PMPB15XN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
13 September 2012
12 / 12
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