16T [NELLSEMI]
TRIACs;
| 型号： | 16T |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs 三端双向交流开关 |
| 文件： | 总7页 (文件大小：661K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
16T Series
SEMICONDUCTOR
TRIACs, 16A
Snubberless, Logic Level and Standard
Features
A2
● Medium current Triac
● Low thermal resistance with clip bonding
1
2
● Low thermal resistance insulation ceramic for
3
A1
A2
insulated 16T
G
● High commutation (4Q) or very high
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
commutation (3Q) capability
● RoHS compliant, UL certified (File NO:E320098)
● Insulated tab (16TxxAI series, rated at 2500 VRMS
(16TxxA)
(16TxxAI)
)
A2
Applications
● Snubberless versions (With Suffix W) especially
recommended for use on inductive loads, because
of their high commutation performances
A1
A2
G
TO-263 (D2PAK)
● On/off or phase angle function in applications such
as static relays, light dimmers and appliance motor
speed controllers
TO-220F (ITO-220AB)
(16TxxAF)
(16TxxH)
2(A2)
1(A1)
Description
3(G)
Available either in through-hole or surface-mount
packages, the 16TxxA and 16TxxAl triacs series
are suitable for general purpose mains power AC
switcging
SYMBOL
VALUE
UNIT
IT(RMS)
16
A
VDRM/VRRM
IGT(Q1)
600 to 1000
5 to 50
V
mA
Device summary
16TxxAI(1)
SYMBOL
PARAMETER
16TxxA
lT(RMS)
On-state RMS current
16
600/800/1000
35/50
16
600/800/1000
35/50
VDRM/VRRM
Repetitive peak off-state voltage
Triggering gate current
IGT(Snubberless)
IGT(Logic level)
Triggering gate current
10
10
IGT(Standard)
Triggering gate current
25/50
25/50
Note 1: Insulated
Page 1 of 7
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RoHS
RoHS
16T Series
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 100ºC
TO-220/TO-263
16
A
IT(RMS)
RMS on-state current (full sine wave)
TO-220insulate/TO-220F (ITO-220AB) Tc = 86ºC
F =50 Hz
F =60 Hz
t = 20 ms
160
168
128
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
t = 16.7 ms
I2t Value for fusing
I2t
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj =125ºC
Tj =125ºC
A/µs
dI/dt
F =100 Hz
50
Tp =20 µs
Tj =125ºC
Peak gate current
IGM
PG(AV)
Tstg
4
1
A
Average gate power dissipation
W
Storage temperature range
- 40 to 150
- 40 to 125
ºC
Tj
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
CW
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
SW
BW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
10
35
50
mA
V
VD = 12 V, RL = 33Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
0.2
40
V
(2)
IT = 500 mA
IH
mA
15
25
30
55
I - III
50
60
70
80
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
40
500
1000
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
8.5
3
(dI/dt)c(2)
MIN.
A/ms
-
Without snubber
8.5
14
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
UNIT
C
B
I - II - III
25
50
50
(1)
IGT
MAX.
mA
VD = 12 V, RL = 33Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
40
80
60
IL
IG = 1.2 IGT
mA
120
400
II
dV/dt(2)
MIN.
MIN.
200
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c = 7 A/ms, Tj = 125°C
V/µs
V/µs
(dV/dt)c(2)
5
10
Page 2 of 7
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RoHS
RoHS
16T Series
SEMICONDUCTOR
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
25
(2)
ITM = 22.5 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
VALUE
UNIT
SYMBOL
TO-220AB, D²PAK
TO-220AB Insulated, TO-220F
D²PAK
1.2
2.1
45
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
S(1)=1cm²
Junction to ambient
°C/W
TO-220AB Insulated, TO-220AB, TO-220F
60
Note 1: S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
50 mA
25 mA
35 mA
10 mA
50 mA
25 mA
10 mA
35 mA
50 mA
50 mA
25 mA
10 mA
35 mA
50 mA
Standard
16TxxA-B/16TxxAl-B
16TxxA-BW/16TxxAl-BW
16TxxA-C/16TxxAl-C
Snubberless
Standard
Snubberless
Logic level
Standard
TO-220AB
16TxxA-CW/16TxxAl-CW
16TxxA-SW/16TxxAl-SW
16TxxH-B
16TxxH-C
Standard
Logic level
Snubberless
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D²PAK
16TxxH-SW
16TxxH-CW
16TxxH-BW
Snubberless
Standard
16TxxAF-B
16TxxAF-C
Standard
TO-220F
(ITO-220AB)
Logic level
16TxxAF-SW
16TxxAF-CW
Snubberless
Snubberless
V
V
V
V
V
V
6TxxAF-BW
ORDERING INFORMATION
,
WEIGHT
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
16TxxA-yy
16TxxAI-yy
16TxxAF-yy
16TxxA-yy
16TxxAI-yy
16TxxAF-yy
2.0g
2.3g
2.5g
TO-220AB
50
50
50
Tube
Tube
Tube
TO-220AB (insulated)
TO-220F(ITO-220AB)
TO-236(D2PAK)
50
Tube
16TxxH-yy
16TxxH-yy
2.0g
Note: xx = voltage, yy = sensitivity
Page 3 of 7
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RoHS
RoHS
16T Series
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
-
BW
16
T 06
A
Current
16 = 16A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
AF = TO-220F ( ITO-220AB, insulated)
H = TO-263 (D²PAK)
I
Sensitivity
GT
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
BW = 50mA Snubberless
CW = 35mA Snubberless
Fig.1 Maximum power dissipation versus
on-state rms current (full cycle)
Fig.2 On-state rms current versus case temperature
(full cycle)
I
18
(A)
T(RMS)
P(W)
20
18
16
16
14
12
14
12
10
ITO-220AB
TO-220AB
(insulated)
10
8
6
8
6
TO-220AB
TO-263
4
2
0
4
IT(RMS)(A)
2
TC(°C)
0
0
75
0
2
4
6
8
10
12
14
16
25
50
100
125
Fig.3 On-state current versus ambient temperature
(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration
IT(RMS) (A)
K=[Z /R
th th
]
4.0
1E+0
1E-1
printed circuit board Fr4, copper thickness:35 µm
Zth(j-c)
3.5
D2PAK
3.0
(S=1cm2)
Zth(j-a)
2.5
2.0
1.5
1.0
0.5
Tc(°C)
tp(s)
0.0
1E-2
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Page 4 of 7
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RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig.6 surge peak on- state current versus number
of cycles
Fig.5 On-state characteristics (maximum values)
ITSM(A)
I
(A)
200
100
180
T max.
j
160
V
R
= 0.85 V
= 25 mΩ
to
140
120
100
80
t=20ms
d
One cycle
Non repetitive
T =T max
j
j
T initial=25°C
j
T =25°C
j
10
1
Repetitive
Tc=85°C
60
40
VTM(V)
20
0
Number of cycles
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
100
1000
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
Fig.8 Relative variation of gate trigger current
ITSM(A), I²t(A²S)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]
3000
1000
2.5
dI/dt limitation:
50A/µs
Tj initial=25°C
2.0
IGT
1.5
1.0
ITSM
IH & IL
0.5
0.0
pulse with width tp<10ms and
corresponding value of l²t
l²t
Tj(°C)
100
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120
140
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [Tj] (dl/dt)c [Tj specified ]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
6
snubberless and Logic level types
SW
standard types
5
4
C
B
3
2
1
0
CW/BW
0.8
0.6
Tj(°C)
0.4
0.1
1.0
10.0
100.0
0
25
50
75
100
125
(dV/dt)c (V/µs)
Page 5 of 7
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RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig.11 D²PAK thermal resistance junction to ambient versus
copper surface under tab (printed circuit FR4, copper
thickness: 35µm
Rth(j-a)(°C/W)
D²PAK
80
70
60
50
40
30
20
10
0
S(cm²)
0
4
8
12
16
20
24
28
32
36
40
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
2(A2)
1(A1)
3(G)
Page 6 of 7
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RoHS
RoHS
16T Series
SEMICONDUCTOR
Case Style
ITO-220AB
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
0.9
0.7
0.48
0.44
2.54
TYP
2.54
TYP
2.85
2.65
4.8
4.6
2(A2)
3(G)
1(A1)
All dimensions in millimeters
Page 7 of 7
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