16T06A-B [NELLSEMI]
TRIACs, 16A Snubberless, Logic Level and Standard; 三端双向可控硅， 16A无缓冲器，逻辑层次和水平
| 型号： | 16T06A-B |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | TRIACs, 16A Snubberless, Logic Level and Standard |
| 文件： | 总7页 (文件大小：2598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
16T Series
SEMICONDUCTOR
TRIACs, 16A
Snubberless, Logic Level and Standard
Features
● Medium current Triac
● Low thermal resistance with clip bonding
● Low thermal resistance insulation ceramic
for insulated 16T
TO-263 (D²PAK)
● High commutation (4Q) or very high
commutation (3Q) capability
(16Txx H)
● RoHS compliant, UL certified (File NO:E320098)
● Insulated tab (16TxxAI series, rated at 2500 VRMS)
A2
Applications
● Snubberless versions (With Suffix W)
especially recommended for use on
inductive loads, because of their high
commutation performances
A1
A2
1
2
3
G
TO-220AB (non-Insulated)
TO-220AB (lnsulated)
(16Txx A)
(16Txx AI)
● On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
Description
Available either in through-hole or surface-mount
packages, the 16TxxA and 16TxxAl triacs series are
suitable for general purpose mains power AC switcging
SYMBOL
VALUE
UNIT
A
IT(RMS)
16
VDRM/VRRM
IGT(Q1)
to
V
5 to 50
mA
Device summary
16TxxA
PARAMETER
16TxxAI(1)
SYMBOL
IT(RMS)
On-state RMS current
16
16
Repetitive peak off-state voltage
Triggering gate current
600/800/1000
35/50
600/800/1000
35/50
VDRM VRRM
/
IGT(Snubberless)
IGT(logic level)
Triggering gate current
Triggering gate current
10
10
IGT(standard)
25/50
25/50
Note 1: Insulated
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Page 1 of 7
RoHS
RoHS
16T Series
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
Tc = 110ºC
Tc = 86ºC
TO-220/TO-263
IT(RMS)
RMS on-state current (full sine wave)
A
16
TO-220insulate
F =50 Hz
t = 20 ms
160
168
128
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
t = 16.7 ms
F =60 Hz
I2t Value for fusing
I2t
A2s
t
= 10 ms
p
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
A/µs
dI/dt
50
F =100 Hz
Tp =20 µs
Tj =125ºC
Tj =125ºC
Peak gate current
IGM
4
1
A
PG(AV)
Tj =125ºC
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
ºC
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
16Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
SW
CW
35
BW
(1)
IGT
I - II - III
I - II - III
MAX.
MAX.
10
50
mA
V
VD = 12 V, RL = 33Ω
VGT
1.3
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
MIN.
I - II - III
0.2
40
V
(2)
IT = 500 mA
IH
mA
15
25
30
55
I - III
50
60
70
80
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
40
500
1000
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
-
-
-
-
Tj = 125°C
Tj = 125°C
Tj = 125°C
8.5
3
(dI/dt)c(2)
MIN.
A/ms
-
Without snubber
8.5
14
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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Page 2 of 7
RoHS
RoHS
16T Series
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
16Txxxx
TEST CONDITIONS
SYMBOL
UNIT
QUADRANT
C
B
25
50
50
I - II - III
(1)
IGT
MAX.
mA
VD = 12 V, RL = 33Ω
IV
100
VGT
VGD
1.3
0.2
V
V
ALL
ALL
VD = VDRM, RL = 3.3KΩ, Tj = 125°C
IT = 500 mA
(2)
mA
IH
MAX.
MAX.
25
50
I - III - IV
40
60
IL
IG = 1.2 IGT
mA
80
120
II
dV/dt(2)
VD = 67% VDRM, gate open, Tj = 125°C
(dI/dt)c = 7 A/ms, Tj = 125°C
V/µs
V/µs
MIN.
MIN.
200
5
400
10
(dV/dt)c(2)
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
1.55
0.85
25
(2)
ITM = 22.5 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
MAX.
MAX.
MAX.
(2)
Tj = 125°C
Vt0
V
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
1
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB, D²PAK
TO-220AB Insulated
D²PAK
1.2
2.1
45
60
Rth(j-c)
Rth(j-a)
Junction to case (AC)
°C/W
S(1)=1cm²
Junction to ambient
°C/W
TO-220AB Insulated, TO-220AB
Note 1: S=Copper surface under tab
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA
50 mA
25 mA
35 mA
10 mA
10 mA
35 mA
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D²PAK
16TxxA-B/16TxxAl-B
16TxxA-BW/16TxxAl-BW
16TxxA-C/16TxxAl-C
Snubberless
Standard
Snubberless
Logic level
Logic level
16TxxA-CW/16TxxAl-CW
16TxxA-SW/16TxxAl-SW
16TxxH-SW
16TxxH-CW
Snubberless
D²PAK
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Page 3 of 7
RoHS
RoHS
16T Series
SEMICONDUCTOR
ORDERING INFORMATION
,
WEIGHT
2.0g
PACKAGE
DELIVERY MODE
ORDERING TYPE
MARKING
BASE Q TY
16TxxA-yy
16TxxA-yy
16TxxAI-yy
16TxxH-yy
TO-220AB
50
50
50
Tube
Tube
Tube
16TxxAI-yy
TO-220AB (insulated)
2.3g
TO-236(D2PAK)
16TxxH-yy
2.0g
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
-
16
T 06
A
BW
Current
16 = 16A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D²PAK)
I
Sensitivity
GT
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
BW = 50mA Snubberless
CW = 35mA Snubberless
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Page 4 of 7
RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus
on-state rms current (full cycle)
Fig.2 On-state rms current versus case
temperature (full cycle)
I
18
16
(A)
T(RMS)
P(W)
20
18
TO-263AB
16
14
12
10
8
14
12
10
TO-220AB
insulated
8
6
6
4
2
0
4
2
0
IT(RMS)(A)
TC(°C)
0
2
4
6
8
12
14
16
10
0
50
100
25
75
125
Fig.3 On-state current versus ambient
temperature (full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Z /R
]
th th
IT(RMS)(A)
4.0
3.5
1E+0
printed circuit board Fr4, copper thickness:35 µm
D²PAK
(S=1cm²)
Zth(j-c)
3.0
2.5
Zth(j-a)
1E-1
2.0
1.5
1.0
0.5
0.0
Tc(°c)
tp(s)
1E+0
1E-2
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+1
1E+2
5E+2
Fig.6 surge peak on- state current versus
number of cycles
Fig.5 On-state characteristics (maximum values)
I
(A)
ITSM(A)
TM
180
160
140
120
100
80
200
100
Tj max.
Vto=0.85V
Rd=25mΩ
t=20ms
One cycle
Non repetitive
Tjinitial=25°C
Tj=Tjmax.
Tj=25°c
Repetitive
Tc=85°C
10
60
40
20
0
VTM (V)
Number of cycles
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
1000
100
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Page 5 of 7
RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
Fig.8 Relative variation of gate trigger current
ITSM(A), I²t(A²S)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]
3000
2.5
2.0
Tj initial=25°C
holding current and latching current versus junction
dl/dt limitation:
50A/µs
temperature (typical values)
IGT
1000
lTSM
1.5
1.0
IH&IL
0.5
0.0
pulse with width tp<10ms and
corresponding value of l²t
l²t
Tj(°C)
100
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120 140
tp(ms)
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [T s
(dI/dt)c [T ] /
pecified]
j
j
2.0
1.8
1.6
1.4
1.2
1.0
6
5
4
3
2
1
0
snubberless and Logic level types
standard types
SW
C
B
CW/BW
0.8
0.6
Tj(°C)
(dV/dt)c (V/µs)
0.4
1.0
10.0
100.0
0
25
50
75
100
0.1
125
Fig.11 D²PAK thermal resistance junction to ambient versus
copper surface under tab (printed circuit FR4, copper
thickness: 35µm
Rth(j-a)(°C/W)
80
70
60
50
40
D²PAK
30
20
10
0
S(cm²)
0
4
8
12
16
20
24
28
32
36
40
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Page 6 of 7
RoHS
RoHS
16T Series
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
4.70 (0.185)
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
PIN
8.89 (0.350)
8.38 (0.330)
1
2
3
4.06 (0.160)
3.56 (0.140)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
1.40 (0.055)
1.14 (0.045)
6.22 (0.245)
1.40 (0.055)
1.19 (0.047)
9.14 (0.360)
8.13 (0.320)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
2.79 (0.110)
5.20 (0.205)
4.95 (0.195)
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Page 7 of 7
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