UPD75P3216GT [NEC]
4-BIT SINGLE-CHIP MICROCONTROLLER; 4位单片微控制器型号: | UPD75P3216GT |
厂家: | NEC |
描述: | 4-BIT SINGLE-CHIP MICROCONTROLLER |
文件: | 总56页 (文件大小:360K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD75P3216
4-BIT SINGLE-CHIP MICROCONTROLLER
The µPD75P3216 replaces the µPD753208’s internal mask ROM with a one-time PROM, and features expanded
ROM capacity.
Because the µPD75P3216 supports programming by users, it is suitable for use in prototype testing for system
development using the µPD753204, 753206, or 753208, and for use in small-lot production.
The functions are explained in detail in the following user’s manual. Be sure to read this manual when
designing your system.
µPD753208 User’s Manual: U10158E
FEATURES
• Compatible with µPD753208
• Memory capacity:
•
PROM : 16384 × 8 bits
•
RAM : 512 × 4 bits
• Can operate in same power supply voltage range as the mask version µPD753208
VDD = 1.8 to 5.5 V
•
• LCD controller/driver
ORDERING INFORMATION
Part Number
Package
48-pin plastic shrink SOP (375 mil, 0.65-mm pitch)
µPD75P3216GT
Caution Mask-option pull-up resistors are not provided in this device.
The information in this document is subject to change without notice.
The mark
shows major revised points.
Document No. U10241EJ1V0DS00 (1st edition)
Date Published January 1997 N
Printed in Japan
1997
©
µPD75P3216
FUNCTION OUTLINE
Parameter
Function
Instruction execution time
• 0.95, 1.91, 3.81, 15.3 µs (@ 4.19-MHz operation with system clock)
• 0.67, 1.33, 2.67, 10.7 µs (@ 6.0-MHz operation with system clock)
Internal memory
PROM 16384 × 8 bits
RAM
512 × 4 bits
General-purpose register
• 4-bit operation: 8 × 4 banks
• 8-bit operation: 4 × 4 banks
Input/
CMOS input
6
Connecting on-chip pull-up resistors can be specified by software: 5
output
port
CMOS input/output
20 Connecting on-chip pull-up resistors can be specified by software: 20
Also used for segment pins: 8
N-ch open-drain I/O
Total
4
13-V withstand
30
LCD controller/driver
• Segment selection:
4/8/12 segments (can be changed to CMOS input/
output port in 4-time units; max. 8)
• Display mode selection: Static
1/2 duty (1/2 bias)
1/3 duty (1/2 bias)
1/3 duty (1/3 bias)
1/4 duty (1/3 bias)
Timer
5 channels
• 8-bit timer/event counter: 1 channel
• 8-bit timer counter: 2 channels (can be used as the 16-bit timer counter, carrier
generator, timer with gate)
• Basic interval timer/watchdog timer: 1 channel
• Watch timer: 1 channel
Serial interface
• 3-wire serial I/O mode ... MSB or LSB can be selected for transferring first bit
• 2-wire serial I/O mode
• SBI mode
Bit sequential buffer (BSB)
Clock output (PCL)
16 bits
•
•
Φ, 524, 262, 65.5 kHz (@ 4.19-MHz operation with system clock)
Φ, 750, 375, 93.8 kHz (@ 6.0-MHz operation with system clock)
Buzzer output (BUZ)
• 2, 4, 32 kHz (@ 4.19-MHz operation with system clock)
• 2.93, 5.86, 46.9 kHz (@ 6.0-MHz with system clock)
Vectored interrupts
Test input
External: 2, Internal: 5
External: 1, Internal: 1
System clock oscillator
Standby function
Power supply voltage
Package
Ceramic or crystal oscillator for system clock oscillation
STOP/HALT mode
VDD = 1.8 to 5.5 V
48-pin plastic shrink SOP (375 mil, 0.65-mm pitch)
2
µPD75P3216
CONTENTS
1. PIN CONFIGURATION (Top View) .................................................................................................... 4
2. BLOCK DIAGRAM .............................................................................................................................. 5
3. PIN FUNCTIONS ................................................................................................................................. 6
3.1 Port Pins ...................................................................................................................................................... 6
3.2 Non-port Pins .............................................................................................................................................. 7
3.3 Equivalent Circuits for Pins...................................................................................................................... 8
3.4 Recommended Connection of Unused Pins ........................................................................................ 10
4. Mk I AND Mk II MODE SELECTION FUNCTION ............................................................................ 11
4.1 Difference between Mk I Mode and Mk II Mode ................................................................................... 11
4.2 Setting of Stack Bank Selection (SBS) Register ................................................................................. 12
5. Differences between µPD75P3216 and µPD753204, 753206, and 753208 ................................13
6. MEMORY CONFIGURATION ........................................................................................................... 14
7. INSTRUCTION SET........................................................................................................................... 16
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY .................................................25
8.1 Operation Modes for Program Memory Write/Verify........................................................................... 25
8.2 Program Memory Write Procedure ........................................................................................................ 26
8.3 Program Memory Read Procedure ........................................................................................................ 27
8.4 One-time PROM Screening ..................................................................................................................... 28
9. ELECTRICAL SPECIFICATIONS ..................................................................................................... 29
10. CHARACTERISTIC CURVE (REFERENCE VALUE) ...................................................................... 42
11. PACKAGE DRAWINGS .................................................................................................................... 44
12. RECOMMENDED SOLDERING CONDITIONS ............................................................................... 45
APPENDIX A. µPD753108, 753208, AND 75P3216 FUNCTIONAL LIST ...........................................46
APPENDIX B. DEVELOPMENT TOOLS ............................................................................................... 48
APPENDIX C. RELATED DOCUMENTS............................................................................................... 52
3
µPD75P3216
1. PIN CONFIGURATION (Top View)
•
48-pin plastic shrink SOP (375 mil, 0.65-mm pitch)
µPD75P3216GT
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
COM0
COM1
COM2
COM3
S12
S13
S14
S15
P93/S16
P92/S17
P91/S18
P90/S19
P83/S20
P82/S21
P81/S22
P80/S23
P23
P22/PCL/PTO2
P21/PTO1
P20/PTO0
P13/TI0
P10/INT0
P03/SI/SB1
P02/SO/SB0
P01/SCK
P00/INT4
BIAS
V
V
V
LC0
LC1
LC2
9
P30/LCDCL/MD0
P31/SYNC/MD1
P32/MD2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
P33/MD3
V
SS
P50/D4
P51/D5
P52/D6
P53/D7
P60/KR0/D0
P61/KR1/D1
P62/KR2/D2
P63/KR3/D3
VDD
RESET
X1
X2
Note
PP
V
Note Be sure to connect VPP to VDD directly in normal operation mode.
PIN IDENTIFICATIONS
PCL
: Programmable Clock
BIAS
BUZ
: LCD Power Supply Bias Control
: Buzzer Clock
PTO0-PTO2 : Programmable Timer Output 0 to 2
RESET
S12-S23
SB0, SB1
SCK
: Reset Input
COM0-COM3 : Common Output 0 to 3
: Segment Output 12 to 23
: Serial Bus 0, 1
D0-D7
: Data Bus 0 to 7
: External Vectored Interrupt 0, 4
: Key Return 0 to 3
: LCD Clock
: Mode Selection 0 to 3
: Port0
INT0, INT4
KR0-KR3
LCDCL
: Serial Clock
SI
: Serial Input
SO
: Serial Output
MD0-MD3
P00-P03
P10, P13
P20-P23
P30-P33
P50-P53
P60-P63
P80-P83
P90-P93
SYNC
TI0
: LCD Synchronization
: Timer Input 0
: Port1
VDD
: Positive Power Supply
: LCD Power Supply 0 to 2
: Programming Power Supply
: Ground
: Port2
VLC0-VLC2
VPP
: Port3
: Port5
VSS
: Port6
X1, X2
: System Clock Oscillation 1, 2
: Port8
: Port9
4
µPD75P3216
2. BLOCK DIAGRAM
WATCH
BUZ/P23
TIMER
INTW fLCD
PORT0
PORT1
PORT2
PORT3
PORT5
PORT6
PORT8
PORT9
4
2
4
4
4
4
4
4
P00-P03
P10, P13
P20-P23
BASIC
INTERVAL
TIMER/
WATCHDOG
TIMER
SP (8)
PROGRAM
COUNTER
CY
ALU
INTBT
SBS
8-BIT
TIMER/EVENT
COUNTER #0
TI0/P13
P30/MD0-
P33/MD3
BANK
PTO0/P20
INTT0 TOUT
P50/D4-
P53/D7
INTT1
GENERAL
REG.
P60/D0-
P63/D3
8-BIT
TIMER
CASCADED
COUNTER #1 16-BIT
PTO1/P21
TOUT
TIMER
COUNTER
8-BIT
TIMER
COUNTER #2
PROM
PROGRAM
MEMORY
P80-P83
P90-P93
DECODE
AND
CONTROL
PTO2/
PCL/P22
DATA
MEMORY
(RAM)
16384 × 8 BITS
INTT2
SI/SB1/P03
SO/SB0/P02
SCK/P01
CLOCKED
SERIAL
INTERFACE
512 × 4 BITS
4
4
4
4
S12-S15
INTCSI TOUT
S16/P93-
S19/P90
INT0/P10
INT4/P00
LCD
CONTROLLER/
DRIVER
S20/P83-
S23/P80
INTERRUPT
CONTROL
fx/2N
CPU CLOCK Φ
fLCD
KR0/P60-
KR3/P63
COM0-COM3
4
CLOCK
OUTPUT
CONTROL
SYSTEM
CLOCK
DIVIDER
STANDBY
CONTROL
CLOCK
VLC0
GENERATOR
BIT SEQ.
BUFFER (16)
VLC1
VLC2
BIAS
LCDCL/P30
SYNC/P31
X1 X2
PCL/PTO2/P22
Vpp VDD VSS RESET
5
µPD75P3216
3. PIN FUNCTIONS
3.1 Port Pins
8-bit
I/O
Status
After Reset TypeNote 1
I/O Circuit
Pin Name
P00
I/O
Shared by
Function
Input INT4
×
Input
<B>
This is a 4-bit input port (PORT0).
P01 to P03 are 3-bit pins for which an internal
pull-up resistor can be connected by software.
P01
P02
P03
P10
I/O
I/O
I/O
SCK
<F>-A
<F>-B
<M>-C
<B>-C
SO/SB0
SI/SB1
Input INT0
×
×
Input
Input
This is a 1-bit input port (PORT1).
These are 1-bit pins for which an internal pull-up
resistor can be connected by software.
P10/INT0 can select noise elimination circuit.
P13
TI0
This is a 4-bit I/O port (PORT2).
P20
P21
P22
P23
P30
P31
P32
P33
P50
P51
P52
P53
I/O
I/O
I/O
PTO0
PTO1
PCL/PTO2
BUZ
E-B
E-B
M-E
These are 4-bit pins for which an internal pull-up
resistor can be connected by software.
This is a programmable 4-bit I/O port (PORT3).
Input and output in single-bit units can be specified.
When set for 4-bit units, an internal pull-up resistor
can be connected by software.
LCDCL/MD0
SYNC/MD1
MD2
×
×
Input
MD3
Note 2
Note 2
Note 2
Note 2
D4
High
This is an N-ch open-drain 4-bit I/O port (PORT5).
When set to open-drain, voltage is 13 V.
Also functions as data I/O pin (upper 4 bits)
for program memory (PROM) write/verify.
D5
impedance
D6
D7
This is a programmable 4-bit I/O port (PORT6).
Input and output in single-bit units can be specified.
When set for 4-bit units, an internal pull-up resistor
can be connected by software.
P60
P61
P62
I/O
KR0/D0
KR1/D1
KR2/D2
×
Input
<F>-A
Also functions as data I/O pin (lower 4 bits) for
program memory (PROM) write/verify.
P63
P80
P81
P82
P83
P90
P91
P92
P93
KR3/D3
S23
I/O
I/O
Input
Input
H
H
This is a 4-bit I/O port (PORT8).
When set for 4-bit units, an internal pull-up resistor
can be connected by software.
S22
S21
S20
S19
This is a programmable 4-bit I/O port (PORT9).
When set for 4-bit units, an internal pull-up resistor
can be connected by software.
S18
S17
S16
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger circuits.
2. Low level input current leakage increases when input instructions or bit manipulation instructions are
executed.
6
µPD75P3216
3.2 Non-port Pins
Status
After Reset TypeNote 1
I/O Circuit
Pin Name
TI0
I/O
Shared by
Function
Input P13
Output P20
P21
External event pulse input to timer/event counter
Timer/event counter output
Input
Input
<B>-C
E-B
PTO0
PTO1
PTO2
PCL
Timer counter output
P22/PCL
P22/PTO2
P23
Clock output
BUZ
Any frequency output (for buzzer or system clock trimming)
Serial clock I/O
SCK
I/O
P01
Input
<F>-A
<F>-B
SO/SB0
P02
Serial data output
Serial data bus I/O
SI/SB1
INT4
P03
Serial data input
<M>-C
<B>
Serial data bus I/O
Input P00
Input P10
Edge detection vectored interrupt input
(detecting both rising and falling edges)
Input
Input
INT0
Edge detection vectored interrupt input
(detected edge is selectable). INT0/P10
can select noise elimination circuit
<B>-C
Noise elimination
circuit/asynch
is selectable
KR0 to KR3
X1
Input P60/D0-P63/D3
Falling edge detection testable input
Input
—
<F>-A
—
Ceramic/crystal oscillation circuit connection for system
clock. If using an external clock, input to X1 and input
inverted phase to X2.
Input
—
X2
—
RESET
Input
—
System reset input
—
<B>
<F>-A
<F>-A
M-E
MD0 to MD3
D0 to D3
D4 to D7
VPP
Input P30 to P33
Mode selection for program memory (PROM) write/verify
Input
Input
I/O
P60/KR0-P63/KR3 Data bus pin for program memory (PROM) write/verify.
P50 to P53
—
—
Programmable power supply voltage for program memory
(PROM) write/verify.
—
—
For normal operation, connect directly to VDD.
Apply +12.5 V for PROM write/verify.
VDD
—
—
—
—
—
Positive power supply
Ground
—
—
—
—
VSS
S12 to S15
S16 to S19
S20 to S23
Output
Segment signal output
Segment signal output
Note 2
Input
G-A
H
Output P93 to P90
P83 to P80
COM0 to COM3 Output
—
—
—
Common signal output
Note 2
—
G-B
—
VLC0 to VLC2
BIAS
—
Power source for LCD drive
Output
Output for external split resistor cut
Note 3
Input
—
Note 4
LCDCL
Output P30/MD0
P31/MD1
Clock output for driving external expansion driver
Clock output for synchronization of external expansion driver
E-B
Note 4
SYNC
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger circuits.
2. The VLCX (X = 0, 1, 2) shown below are selected as the input source for the display outputs.
S12 to S15: VLC1, COM1 to COM2: VLC2, COM3: VLC0
3. When the split resistor is incorporated
: Low level
When the split resistor is not incorporated: High impedance
4. These pins are provided for future system expansion. Currently, only P30 and P31 are used.
7
µPD75P3216
3.3 Equivalent Circuits for Pins
The equivalent circuits for the µPD75P3216’s pins are shown in abbreviated form below.
TYPE A
TYPE D
VDD
VDD
Data
P-ch
OUT
P-ch
IN
Output
disable
N-ch
N-ch
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
CMOS standard input buffer
TYPE B
TYPE E-B
VDD
P.U.R.
P-ch
P.U.R.
enable
IN
Data
IN/OUT
Type D
Output
disable
Type A
Schmitt trigger input with hysteresis characteristics.
P.U.R. : Pull-Up Resistor
TYPE B-C
TYPE F-A
VDD
VDD
P.U.R.
P-ch
P.U.R.
enable
P.U.R.
P.U.R.
enable
P-ch
Data
IN/OUT
Type D
Output
disable
IN
Type B
P.U.R. : Pull-Up Resistor
P.U.R. : Pull-Up Resistor
(Continued)
8
µPD75P3216
(Continued)
TYPE F-B
TYPE H
VDD
P.U.R.
P-ch
P.U.R.
enable
Output
disable
(P)
V
DD
IN/OUT
SEG
data
Type G-A
Type E-B
P-ch
IN/OUT
Data
Output
disable
N-ch
Data
Output
disable
(N)
Output
disable
P.U.R. : Pull-Up Resistor
TYPE G-A
TYPE M-C
VDD
VLC0
P.U.R.
P-ch
IN/OUT
VLC1
P.U.R.
enable
P-ch N-ch
OUT
Data
N-ch
SEG
data
Output
disable
N-ch
VLC2
N-ch
P.U.R. : Pull-Up Resistor
TYPE G-B
TYPE M-E
IN/OUT
V
V
LC0
LC1
data
N-ch
(+13 V)
output
disable
VDD
P-ch N-ch
input
instruction
P-ch
P.U.R.Note
OUT
COM
data
Voltage
control
circuit
N-ch P-ch
V
LC2
(+13 V)
N-ch
Note This pull-up resistor is effective only when an input
instruction is executed (when the pin level is low,
current flows from VDD to the pin).
9
µPD75P3216
3.4 Recommended Connection of Unused Pins
Pin
Recommended Connection
P00/INT4
Connect to Vss or VDD
P01/SCK
Connect to Vss or VDD through a resistor individually
P02/SO/SB0
P03/SI/SB1
P10/INT0
Connect to Vss
Connect to Vss or VDD
P13/TI0
P20/PTO0
Input status : connect to Vss or VDD through a resistor individually
Output status: open
P21/PTO1
P22/PTO2/PCL
P23/BUZ
P30/MD0/LCDCL
P31/MD1/SYNC
P32/MD2
P33/MD3
P50/D4 to P53/D7
Connect to Vss
P60/KR0/D0 to P63/KR3/D3 Input status : connect to Vss or VDD through a resistor individually
Output status: open
S12 to S15
Open
COM0 to COM3
S16/P93 to S19/P90
S20/P83 to S23/P80
VLC0 to VLC2
Input status : connect to Vss or VDD through a resistor individually
Output status: open
Connect to Vss
BIAS
Connect to Vss only when VLC0 to VLC2 are all not used.
In other cases, leave open.
VPP
Be sure to connect VDD directly.
10
µPD75P3216
4. Mk I AND Mk II MODE SELECTION FUNCTION
Setting a stack bank selection (SBS) register for the µPD75P3216 enables the program memory to be switched
between Mk I mode and Mk II mode. This function is applicable when using theµPD75P3216 to evaluate the µPD753204,
753206, or 753208.
When the SBS bit 3 is set to 1: sets Mk I mode (supports Mk I mode for µPD753204, 753206, and 753208)
When the SBS bit 3 is set to 0: sets Mk II mode (supports Mk II mode for µPD753204, 753206, and 753208)
4.1 Difference between Mk I Mode and Mk II Mode
Table 4-1 lists points of difference between the Mk I mode and the Mk II mode for the µPD75P3216.
Table 4-1. Difference between Mk I Mode and Mk II Mode
Item
Mk I Mode
Mk II Mode
Program counter
PC13-0
16384
512 × 4
Program memory (bytes)
Data memory (bits)
Stack
Stack bank
Selectable via memory banks 0, 1
No. of stack bytes
2 bytes
None
3 bytes
Instruction
BRA !addr1 instruction
CALLA !addr1 instruction
CALL !addr instruction
CALLF !faddr instruction
Provided
Instruction
3 machine cycles
2 machine cycles
4 machine cycles
3 machine cycles
execution time
Supported mask ROMs
When set to Mk I mode:
When set to Mk II mode:
µPD753204, 753206, and 753208
µPD753204, 753206, and 753208
Caution The Mk II mode supports a program area which exceeds 16K bytes in the 75X and 75XL series. This
mode enhances the software compatibility with products which have more than 16K bytes.
When the Mk II mode is selected, the number of stack bytes used in execution of a subroutine call
instruction increases by 1 per stack for the usable area compared to the Mk I mode. Furthermore,
when a CALL !addr, or CALLF !faddr instruction is used, each instruction takes another machine
cycle. Therefore, when more importance is attached to RAM utilization or throughput than software
compatibility, use the Mk I mode.
11
µPD75P3216
4.2 Setting of Stack Bank Selection (SBS) Register
Use the stack bank selection register to switch between Mk I mode and Mk II mode. Figure 4-1 shows the format for
doing this.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode, be
sure to initialize the stack bank selection register to 100XBNote at the beginning of the program. When using the Mk II
mode, be sure to initialize it to 000XBNote
.
Note Set the desired value for X.
Figure 4-1. Format of Stack Bank Selection Register
Address
3
2
1
0
Symbol
F84H SBS3 SBS2 SBS1 SBS0 SBS
Stack area specification
0
0
1
1
0
1
0
1
Memory bank 0
Memory bank 1
Setting prohibited
0
Be sure to enter “0” for bit 2.
Mode selection specification
0
1
Mk II mode
Mk I mode
Cautions 1. SBS3 is set to “1” after RESET input, and consequently the CPU operates in Mk I mode. When
using instructions for Mk II mode, set SBS3 to “0” and set Mk II mode before using the
instructions.
2. When using Mk II mode, execute a subroutine call instruction and an interrupt instruction after
RESET input and after setting the stack bank selection register.
12
µPD75P3216
5. DIFFERENCES BETWEEN µPD75P3216 AND µPD753204, 753206, AND 753208
The µPD75P3216 replaces the internal mask ROM in the µPD753204, 753206, and 753208 with a one-time PROM
andfeaturesexpandedROMcapacity. TheµPD75P3216’sMkImodesupportstheMkImodeintheµPD753204,753206,
and 753208 and the µPD75P3216’s Mk II mode supports the Mk II mode in the µPD753204, 753206, and 753208.
Table 5-1 lists differences among the µPD75P3216 and the µPD753204, 753206, and 753208. Be sure to check the
differences among these products before using them with PROMs for debugging or prototype testing of application
systems or, later, when using them with a mask ROM for full-scale production.
For details on the CPU functions and internal hardware, refer to µPD753208 User’s Manual (U10158E).
Table 5-1. Differences between µPD75P3216 and µPD753204, 753206, and 753208
Item
µPD753204
12 bits
µPD753206
13 bits
µPD753208
µPD75P3216
14 bits
Program counter
Program memory (bytes)
Mask ROM
4096
Mask ROM
6144
Mask ROM
8192
One-time PROM
16384
Data memory (× 4 bits)
512
Mask options
Pull-up resistor for
Yes (specifiable)
No (off chip)
port 5
Note
Waiting time in
RESET
Yes (selectable from 217/fX and 215/fX)
No
(Fixed to 215/fX ms)
Pin configuration Pin 9 to 12
Pin 14 to 17
P30 to P33
P30/MD0-P33/MD3
P50/D4-P53/D7
P50 to P53
Pin 18 to 20
P60/KR0 to P63/KR3
P60/KR0/D0-
P63/KR3/D3
Pin 25
IC
VPP
Other
Noise resistance and noise radiation may differ due to the different circuit sizes and
mask layouts.
Note 217/fX = 21.8 ms (@6.0 MHz), 31.3 ms (@4.19 MHz)
215/fX = 5.46 ms (@6.0 MHz), 7.81 ms (@4.19 MHz)
Caution Noise resistance and noise radiation are different in PROM and mask ROMs. In transferring to mask
ROM versions from the PROM version in a process between prototype development and full
production, be sure to fully evaluate the mask ROM version’s CS (not ES).
13
µPD75P3216
6. MEMORY CONFIGURATION
Figure 6-1. Program Memory Map
7
6
5
0
0000H MBE RBE Internal reset start address (upper 6 bits)
Internal reset start address (lower 8 bits)
0002H MBE RBE INTBT/INT4 start address (upper 6 bits)
INTBT/INT4 start address (lower 8 bits)
CALLF
!faddr instruction
entry address
0004H MBE RBE INT0 start address (upper 6 bits)
INT0 start address (lower 8 bits)
0006H
BRCB
!caddr instruction
branch address
0008H MBE RBE INTCSI start address (upper 6 bits)
INTCSI start address (lower 8 bits)
Branch addresses for
the following instructions
• BR !addr
• CALL !addr
• BRA !addr1Note
• CALLA !addr1Note
• MOVT BCDE
• MOVT BCXA
000AH MBE RBE INTT0 start address (upper 6 bits)
INTT0 start address (lower 8 bits)
000CH MBE RBE INTT1/INTT2 start address (upper 6 bits)
INTT1/INTT2 start address (lower 8 bits)
Branch/call
address
0020H
by GETI
Reference table for GETI instruction
007FH
0080H
BR $addr instruction
relative branch address
(–15 to –1,
+2 to +16)
07FFH
0800H
0FFFH
1000H
BRCB
!caddr instruction
branch address
1FFFH
2000H
BRCB
!caddr instruction
branch address
2FFFH
3000H
BRCB
!caddr instruction
branch address
3FFFH
Note Can be used only in Mk II mode.
Remark For instructions other than those noted above, the BR PCDE and BR PCXA instructions can be used to
branch to addresses with changes in the PC’s lower 8 bits only.
14
µPD75P3216
Figure 6-2. Data Memory Map
Data memory
Memory bank
000H
General-purpose register area
(32 × 4)
01FH
020H
0
256 × 4
(224 × 4)
Stack area Note
Data area
static RAM
(512 × 4)
0FFH
100H
256 × 4
(236 × 4)
1EBH
1ECH
1
Display data memory (12 × 4)
(12 × 4)
(8 × 4)
1F7H
1F8H
1FFH
F80H
Not incorporated
128 × 4
15
Peripheral hardware area
FFFH
Note Memory bank 0 or 1 can be selected as the stack area.
15
µPD75P3216
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the
instruction’s operand representations (for further description, refer to RA75X Assembler Package User’s Manual
–Language (EEU-1343)). When there are several codes, select and use just one. Codes that consist of upper-case
letters and + or – symbols are key words that should be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Enter register flag symbols as label descriptors instead of mem, fmem, pmem, bit, etc. (for further description, refer
to µPD753208 User’s Manual (U10158E)). The number of labels that can be entered for fmem and pmem are
restricted.
Representation
reg
Coding Format
X, A, B, C, D, E, H, L
X, B, C, D, E, H, L
XA, BC, DE, HL
BC, DE, HL
reg1
rp
rp1
rp2
BC, DE
rp’
XA, BC, DE, HL, XA’, BC’, DE’, HL’
BC, DE, HL, XA’, BC’, DE’, HL’
HL, HL+, HL–, DE, DL
rp’1
rpa
rpa1
n4
DE, DL
4-bit immediate data or label
8-bit immediate data or label
n8
Note
mem
bit
8-bit immediate data or label
2-bit immediate data or label
fmem
pmem
addr
addr1
caddr
faddr
taddr
PORTn
IEXXX
RBn
MBn
FB0H to FBFH, FF0H to FFFH immediate data or label
FC0H to FFFH immediate data or label
0000H to 3FFFH immediate data or label
0000H to 3FFFH immediate data or label (Mk II mode only)
12-bit immediate data or label
11-bit immediate data or label
20H to 7FH immediate data (however, bit0 = 0) or label
PORT0 to PORT3, PORT5, PORT6, PORT8, PORT9
IEBT, IECSI, IET0, IET1, IET2, IE0, IE2, IE4, IEW
RB0 to RB3
MB0, MB1, MB15
Note When processing 8-bit data, only even-numbered addresses can be specified.
16
µPD75P3216
(2) Operation legend
A
: A register; 4-bit accumulator
B
: B register
C
: C register
D
: D register
E
: E register
H
: H register
L
: L register
X
: X register
XA
BC
DE
HL
XA’
BC’
DE’
HL’
PC
SP
CY
PSW
MBE
RBE
: Register pair (XA); 8-bit accumulator
: Register pair (BC)
: Register pair (DE)
: Register pair (HL)
: Expansion register pair (XA’)
: Expansion register pair (BC’)
: Expansion register pair (DE’)
: Expansion register pair (HL’)
: Program counter
: Stack pointer
: Carry flag; bit accumulator
: Program status word
: Memory bank enable flag
: Register bank enable flag
PORTn : Port n (n = 0 to 3, 5, 6, 8, 9)
IME
IPS
: Interrupt master enable flag
: Interrupt priority selection register
IEXXX : Interrupt enable flag
RBS
MBS
PCC
.
: Register bank selection register
: Memory bank selection register
: Processor clock control register
: Delimiter for address and bit
: Addressed data
(XX)
XXH
: Hexadecimal data
17
µPD75P3216
(3) Description of symbols used in addressing area
MB = MBE • MBS
*1
MBS = 0, 1, 15
MB = 0
*2
*3
MBE = 0
: MB = 0 (000H to 07FH)
MB = 15 (F80H to FFFH)
: MB = MBS
Data memory
addressing
MBE = 1
MBS = 0, 1, 15
MB = 15, fmem = FB0H to FBFH, FF0H to FFFH
MB = 15, pmem = FC0H to FFFH
*4
*5
*6
addr = 0000H to 3FFFH
addr, addr1 = (Current PC) – 15 to (Current PC) – 1
(Current PC) +2 to (Current PC) +16
*7
caddr = 0000H to 0FFFH (PC13
1000H to 1FFFH (PC13
2000H to 2FFFH (PC13
3000H to 3FFFH (PC13
,
,
,
,
12 = 00B) or
12 = 01B) or
12 = 10B) or
12 = 11B)
Program memory
addressing
*8
faddr = 0000H to 07FFH
taddr = 0020H to 007FH
*9
*10
*11
addr1 = 0000H to 3FFFH (Mk II mode only)
Remarks 1. MB indicates access-enabled memory banks.
2. In area *2, MB = 0 for both MBE and MBS.
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies
as shown below.
•
•
•
No skip ....................................................................S = 0
Skipped instruction is 1-byte or 2-byte instruction .. S = 1
Skipped instruction is 3-byte instructionNote ........... S = 2
Note
3-byte instructions: BR !addr, BRA !addr1, CALL !addr, and CALLA !addr1
Caution The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= tCY) of the CPU clock F. Use the PCC setting to select among four cycle
times.
18
µPD75P3216
Instruction
Group
No. of Machine
Bytes Cycle
Addressing
Skip
Mnemonic
MOV
Operand
A, #n4
Operation
Area
Condition
Transfer
1
2
2
2
2
1
1
1
1
2
1
2
2
2
2
2
2
2
2
2
1
1
1
1
2
2
2
1
2
1
1
1
1
1
2
2
2
2
1
A←n4
String-effect A
reg1, #n4
XA, #n8
reg1←n4
XA←n8
HL←n8
rp2←n8
A←(HL)
String-effect A
String-effect B
HL, #n8
rp2, #n8
A, @HL
*1
*1
*1
*2
*1
*1
*1
*3
*3
*3
*3
A, @HL+
A, @HL–
A, @rpa1
XA, @HL
@HL, A
2+S A←(HL), then L←L+1
2+S A←(HL), then L←L–1
L=0
L=FH
1
2
1
2
2
2
2
2
2
2
2
2
1
A←(rpa1)
XA←(HL)
(HL)←A
@HL, XA
A, mem
(HL)←XA
A←(mem)
XA←(mem)
(mem)←A
(mem)←XA
A←reg
XA, mem
mem, A
mem, XA
A, reg
XA, rp’
XA←rp’
reg1, A
reg1←A
rp’1, XA
rp’1←XA
A↔(HL)
XCH
A, @HL
*1
*1
*1
*2
*1
*3
*3
A, @HL+
A, @HL–
A, @rpa1
XA, @HL
A, mem
2+S A↔(HL), then L←L+1
2+S A↔(HL), then L←L–1
L=0
L=FH
1
2
2
2
1
2
3
3
3
3
A↔(rpa1)
XA↔(HL)
A↔(mem)
XA, mem
A, reg1
XA↔(mem)
A↔reg1
XA, rp’
XA↔rp’
Table
MOVT
XA, @PCDE
XA, @PCXA
XA, @BCDE
XA, @BCXA
XA←(PC13-8+DE)ROM
XA←(PC13-8+XA)ROM
XA←(B2-0+BCDE)ROM
XA←(B2-0+BCXA)ROM
reference
Note
Note
*6
*6
Note Only the lower 2 bits in the B register are valid.
19
µPD75P3216
Instruction
Group
No. of Machine
Bytes Cycle
Addressing
Area
Skip
Mnemonic
MOV1
Operand
Operation
CY←(fmem.bit)
Condition
Bit transfer
CY, fmem.bit
CY, pmem.@L
CY, @H+mem.bit
fmem.bit, CY
pmem.@L, CY
@H+mem.bit, CY
A, #n4
2
2
2
2
2
2
1
2
1
2
2
1
2
2
1
2
2
1
2
2
2
1
2
2
2
1
2
2
2
1
2
2
1
2
1
1
2
2
1
2
2
2
2
2
2
2
*4
*5
*1
*4
*5
*1
CY←(pmem7-2+L3-2.bit(L1-0))
CY←(H+mem3-0.bit)
(fmem.bit)←CY
(pmem7-2+L3-2.bit(L1-0))←CY
(H+mem3-0.bit)←CY
Arithmetic
ADDS
1+S A←A+n4
carry
XA, #n8
A, @HL
XA, rp’
2+S XA←XA+n8
1+S A←A+(HL)
2+S XA←XA+rp’
2+S rp’1←rp’1+XA
carry
carry
carry
carry
*1
*1
*1
*1
rp’1, XA
A, @HL
XA, rp’
ADDC
SUBS
SUBC
AND
1
2
2
A, CY←A+(HL)+CY
XA, CY←XA+rp’+CY
rp’1, CY←rp’1+XA+CY
rp’1, XA
A, @HL
XA, rp’
1+S A←A–(HL)
2+S XA←XA–rp’
2+S rp’1←rp’1–XA
borrow
borrow
borrow
rp’1, XA
A, @HL
XA, rp’
1
2
2
2
1
2
2
2
1
2
2
2
1
2
2
1
2
A, CY←A–(HL)–CY
XA, CY←XA–rp’–CY
rp’1, CY←rp’1–XA–CY
A←A n4
rp’1, XA
A, #n4
A, @HL
XA, rp’
A←A (HL)
*1
*1
*1
XA←XA rp’
rp’1, XA
A, #n4
rp’1←rp’1 XA
A←A n4
OR
A, @HL
XA, rp’
A←A (HL)
XA←XA rp’
rp’1, XA
A, #n4
rp’1←rp’1 XA
A←A n4
XOR
A, @HL
XA, rp’
A←A (HL)
XA←XA rp’
rp’1, XA
A
rp’1←rp’1 XA
CY←A0, A3←CY, An-1←An
A←A
Accumulator
manipulation
RORC
NOT
A
INCS
reg
1+S reg←reg+1
1+S rp1←rp1+1
2+S (HL)←(HL)+1
2+S (mem)←(mem)+1
1+S reg←reg–1
2+S rp’←rp’–1
reg=0
Increment/
decrement
rp1
rp1=00H
(HL)=0
@HL
*1
*3
mem
(mem)=0
reg=FH
rp’=FFH
DECS
reg
rp’
20
µPD75P3216
Instruction
Group
No. of Machine
Bytes Cycle
Addressing
Skip
Mnemonic
SKE
Operand
reg, #n4
Operation
Area
Condition
Comparison
2
2
1
2
2
2
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2+S Skip if reg=n4
reg=n4
@HL, #n4
A, @HL
2+S Skip if(HL)=n4
1+S Skip if A=(HL)
2+S Skip if XA=(HL)
2+S Skip if A=reg
2+S Skip if XA=rp’
*1
*1
*1
(HL)=n4
A=(HL)
XA=(HL)
A=reg
XA, @HL
A, reg
XA, rp’
XA=rp’
Carry flag
SET1
CLR1
SKT
CY
1
1
CY←1
CY←0
manipulation
CY
CY
1+S Skip if CY=1
CY=1
NOT1
SET1
CY
1
2
2
2
2
2
2
2
2
CY←CY
Memory bit
mem.bit
(mem.bit)←1
(fmem.bit)←1
*3
*4
*5
*1
*3
*4
*5
*1
*3
*4
*5
*1
*3
*4
*5
*1
*4
*5
*1
*4
*5
*1
*4
*5
*1
*4
*5
*1
manipulation
fmem.bit
pmem.@L
@H+mem.bit
mem.bit
(pmem7-2+L3-2.bit(L1-0))←1
(H+mem3-0.bit)←1
(mem.bit)←0
CLR1
SKT
fmem.bit
(fmem.bit)←0
pmem.@L
@H+mem.bit
mem.bit
(pmem7-2+L3-2.bit(L1-0))←0
(H+mem3-0.bit)←0
2+S Skip if(mem.bit)=1
(mem.bit)=1
fmem.bit
2+S Skip if(fmem.bit)=1
(fmem.bit)=1
(pmem.@L)=1
(@H+mem.bit)=1
(mem.bit)=0
pmem.@L
@H+mem.bit
mem.bit
2+S Skip if(pmem7-2+L3-2.bit(L1-0))=1
2+S Skip if(H+mem3-0.bit)=1
2+S Skip if(mem.bit)=0
SKF
fmem.bit
2+S Skip if(fmem.bit)=0
(fmem.bit)=0
(pmem.@L)=0
(@H+mem.bit)=0
(fmem.bit)=1
(pmem.@L)=1
(@H+mem.bit)=1
pmem.@L
@H+mem.bit
fmem.bit
2+S Skip if(pmem7-2+L3-2.bit(L1-0))=0
2+S Skip if(H+mem3-0.bit)=0
2+S Skip if(fmem.bit)=1 and clear
2+S Skip if(pmem7-2+L3-2.bit (L1-0))=1 and clear
2+S Skip if(H+mem3-0.bit)=1 and clear
SKTCLR
AND1
OR1
pmem.@L
@H+mem.bit
CY, fmem.bit
CY, pmem.@L
CY, @H+mem.bit
CY, fmem.bit
CY, pmem.@L
CY, @H+mem.bit
CY, fmem.bit
CY, pmem.@L
CY, @H+mem.bit
2
2
2
2
2
2
2
2
2
CY←CY (fmem.bit)
CY←CY (pmem7-2+L3-2.bit(L1-0))
CY←CY (H+mem3-0.bit)
CY←CY (fmem.bit)
CY←CY (pmem7-2+L3-2.bit(L1-0))
CY←CY (H+mem3-0.bit)
CY←CY (fmem.bit)
XOR1
CY←CY (pmem7-2+L3-2.bit(L1-0))
CY←CY (H+mem3-0.bit)
21
µPD75P3216
Instruction
Group
No. of Machine
Bytes Cycle
Addressing
Area
Skip
Mnemonic
Operand
addr
Operation
Condition
Note
Branch
BR
—
—
PC13-0←addr
*6
Use the assembler to select the
most appropriate instruction
among the following.
• BR !addr
• BRCB !caddr
• BR $addr
addr1
—
—
PC13-0←addr1
*11
Use the assembler to select
the most appropriate instruction
among the following.
• BRA !addr1
• BR !addr
• BRCB !caddr
• BR $addr1
!addr
3
1
1
2
2
2
2
3
2
3
2
2
3
3
3
3
3
2
PC13-0←addr
*6
*7
$addr
$addr1
PCDE
PCXA
BCDE
BCXA
!addr1
!caddr
PC13-0←addr
PC13-0←addr1
PC13-0←PC13-8+DE
PC13-0←PC13-8+XA
PC13-0←BCDE
*6
*6
PC13-0←BCXA
Note
BRA
PC13-0←addr1
*11
*8
BRCB
PC13-0←PC13, 12+caddr11-0
Note Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
22
µPD75P3216
Instruction
Group
No. of Machine
Bytes Cycle
Addressing
Skip
Mnemonic
Operand
!addr1
Operation
Area
Condition
Note
Subroutine
CALLA
3
3
(SP–6)(SP–3)(SP–4)←PC11-0
(SP–5)←0, 0, PC13, 12
stack control
(SP–2)
←X, X, MBE, RBE
PC13–0
←
addr1, SP SP–6
←
Note
CALL
!addr
3
3
4
(SP–4)(SP–1)(SP–2)
(SP–3) MBE, RBE, PC13, 12
addr, SP SP–4
←
PC11-0
*6
←
PC13–0
←
←
(SP–6)(SP–3)(SP–4)←PC11-0
(SP–5)←0, 0, PC13, 12
(SP–2)
←X, X, MBE, RBE
PC13-0
←
addr, SP SP–6
←
Note
CALLF
!faddr
2
1
1
2
3
(SP–4)(SP–1)(SP–2)
(SP–3) MBE, RBE, PC13, 12
PC13-0←000+faddr, SP←SP–4
←
PC11-0
*9
←
(SP–6)(SP–3)(SP–4)←PC11-0
(SP–5)←0, 0, PC13, 12
(SP–2)←X, X, MBE, RBE
PC13-0←000+faddr, SP←SP–6
Note
RET
3
MBE, RBE, PC13, 12←(SP+1)
PC11-0←(SP)(SP+3)(SP+2)
SP←SP+4
X, X, MBE, RBE←(SP+4)
PC11-0←(SP)(SP+3)(SP+2)
MBE, 0, PC13, 12←(SP+1)
SP←SP+6
Note
RETS
3+S MBE, RBE, PC13, 12←(SP+1)
PC11-0←(SP)(SP+3)(SP+2)
SP←SP+4
Unconditional
then skip unconditionally
X, X, MBE, RBE←(SP+4)
PC11-0←(SP)(SP+3)(SP+2)
0, 0, PC13, 12←(SP+1)
SP←SP+6
then skip unconditionally
Note
RETI
1
3
MBE, RBE, PC13, 12←(SP+1)
PC11-0←(SP)(SP+3)(SP+2)
PSW←(SP+4)(SP+5), SP←SP+6
0, 0, PC13, 12←(SP+1)
PC11-0←(SP)(SP+3)(SP+2)
PSW←(SP+4)(SP+5), SP←SP+6
PUSH
POP
rp
1
2
1
2
1
2
1
2
(SP–1)(SP–2)←rp, SP←SP–2
BS
rp
(SP–1)
rp←(SP+1)(SP), SP←SP+2
MBS←(SP+1), RBS←(SP), SP←SP+2
←MBS, (SP–2)←RBS, SP←SP–2
BS
Note Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
23
µPD75P3216
Instruction
Group
No. of Machine
Bytes Cycle
Addressing
Area
Skip
Mnemonic
EI
Operand
Operation
Condition
Interrupt
control
2
2
2
2
2
2
2
2
2
2
1
2
2
1
2
2
2
2
2
2
2
2
2
2
1
2
2
3
IME(IPS.3)←1
IEXXX←1
IEXXX
DI
IME(IPS.3)←0
IEXXX←0
IEXXX
Note 1
I/O
IN
A, PORTn
XA, PORTn
PORTn, A
PORTn, XA
A←PORTn
(n=0-3, 5, 6, 8, 9)
XA←PORTn+1, PORTn(n=8)
Note 1
OUT
PORTn←A
(n=2-3, 5, 6, 8, 9)
PORTn+1, PORTn←XA(n=8)
Set HALT Mode(PCC.2←1)
Set STOP Mode(PCC.3←1)
No Operation
CPU control
Special
HALT
STOP
NOP
SEL
RBn
MBn
RBS←n (n=0-3)
MBS←n (n=0, 1, 15)
• When using TBR instruction
GETINote 2, 3 taddr
*10
PC13-0←(taddr)5-0+(taddr+1)
- - - - - - - - - - - - - - - - - - - - - - - - - - -
• When using TCALL instruction
- - - - - - - - - - - -
(SP–4)(SP–1)(SP–2)←PC11-0
(SP+1)
←MBE, RBE, PC13, 12
PC13-0←(taddr)5-0+(taddr+1)
SP←SP–4
- - - - - - - - - - - - - - - - - - - - - - - - - - -
• When using instruction other than
- - - - - - - - - - - -
Determined by
TBR or TCALL
referenced
instruction
Execute (taddr)(taddr+1) instructions
• When using TBR instruction
PC13-0←(taddr)5-0+(taddr+1)
1
3
*10
- - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
4
• When using TCALL instruction
(SP–6)(SP–3)(SP–4)
←PC11-0
(SP–2)←X, X, MBE, RBE
PC13-0←(taddr)5-0+(taddr+1)
SP←SP–6
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - -
Determined by
3
• When using instruction other than
TBR or TCALL
referenced
instruction
Execute (taddr)(taddr+1) instructions
Notes 1. Before executing the IN or OUT instruction, set MBE to 0 or 1 and set MBE to 15.
2. TBR and TCALL instructions are assembler directives for the GETI instruction’s table definitions.
3. Shaded areas indicate support for Mk II mode only. Other areas indicate support for Mk I mode only.
24
µPD75P3216
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory contained in the µPD75P3216 is a 16384 × 8-bit one-time PROM that can be electrically written
one time only. The pins listed in the table below are used for this PROM’s write/verify operations. Clock input from the
X1 pin is used instead of address input as a method for updating addresses.
Pin
Function
VPP
Pin where program voltage is applied during program
memory write/verify (usually VDD potential)
X1, X2
Clock input pins for address updating during program
memory write/verify. Input the X1 pin’s inverted signal to
the X2 pin.
MD0 to MD3
Operation mode selection pin for program memory write/
verify
D0/P60/KR0-D3/P63/KR3 (lower 4 bits) 8-bit data I/O pins for program memory write/verify
D4/P50-D7/P53 (upper 4 bits)
VDD
Pin where power supply voltage is applied. Applies 1.8 to
5.5 V in normal operation mode and +6 V for program
memory write/verify.
Caution Pins not used for program memory write/verify should be connected to Vss.
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the VDD pin and +12.5 V to the VPP pin, the µPD75P3216 enters the program memory write/
verify mode. The following operation modes can be specified by setting pins MD0 to MD3 as shown below.
Operation Mode Specification
Operation Mode
VPP
VDD
MD0 MD1
MD2 MD3
+12.5 V
+6 V
H
L
L
H
L
H
H
H
H
L
Zero-clear program memory address
Write mode
H
H
H
L
Verify mode
H
X
Program inhibit mode
X: L or H
25
µPD75P3216
8.2 Program Memory Write Procedure
Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins to Vss through resistors. Set the X1 pin low.
(2) Supply 5 V to the VDD and VPP pins.
(3) Wait 10 µs.
(4) Select the zero-clear program memory address mode.
(5) Supply 6 V to the VDD and 12.5 V to the VPP pins.
(6) Write data in the 1 ms write mode.
(7) Select the verify mode. If the data is correct, go to step (8) and if not, repeat steps (6) and (7).
(8) (X : number of write operations from steps (6) and (7)) × 1 ms additional write.
(9) Apply four pulses to the X1 pin to increment the program memory address by one.
(10) Repeat steps (6) to (9) until the end address is reached.
(11) Select the zero-clear program memory address mode.
(12) Return the VDD and VPP pins back to 5 V.
(13) Turn off the power.
The following figure shows steps (2) to (9).
X repetitions
Address
increment
Additional
write
Write
Verify
VPP
VDD
VPP
VDD + 1
VDD
VDD
X1
D0/P60/KR0-
D3/P63/KR3
Data
output
Data input
Data input
D4/P50-
D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
26
µPD75P3216
8.3 Program Memory Read Procedure
The µPD75P3216 can read program memory contents using the following procedure.
(1) Pull down unused pins to VSS through resistors. Set the X1 pin low.
(2) Supply 5 V to the VDD and VPP pins.
(3) Wait 10 µs.
(4) Select the zero-clear program memory address mode.
(5) Supply 6 V to the VDD and 12.5 V to the VPP pins.
(6) Select the verify mode. Apply four pulses to the X1 pin. Every four clock pulses will output the data stored in one
address.
(7) Select the zero-clear program memory address mode.
(8) Return the VDD and VPP pins back to 5 V.
(9) Turn off the power.
The following figure shows steps (2) to (9).
V
PP
VPP
V
DD
VDD + 1
V
DD
VDD
X1
D0/P60/KR0-
D3/P63/KR3
Data output
Data output
D4/P50-
D7/P53
MD0/P30
“L”
MD1/P31
MD2/P32
MD3/P33
27
µPD75P3216
8.4 One-time PROM Screening
Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC. Therefore, NEC recommends
that after the required data is written and the PROM is stored under the temperature and time conditions shown below,
the PROM should be verified via a screening.
Storage Temperature
125 ˚C
Storage Time
24 hours
28
µPD75P3216
9. ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Parameter
Supply voltage
Symbol
VDD
VPP
VI1
Test Conditions
Rating
Unit
V
–0.3 to +7.0
–0.3 to +13.5
–0.3 to VDD + 0.3
–0.3 to +14
–0.3 to VDD + 0.3
–10
PROM supply voltage
Input voltage
V
Except port 5
V
VI2
Port 5
N-ch open-drain
V
Output voltage
VO
V
Output current, high
IOH
Per pin
mA
mA
mA
mA
˚C
Total for all pins
Per pin
–30
Output current, low
IOL
TA
30
Total for all pins
220
Operating ambient
temperature
–40 to +85Note
Storage temperature
Tstg
–65 to +150
˚C
Note When LCD is driven in normal mode: TA = –10 to +85 ˚C
Caution Exposure to Absolute Maximum Ratings even for instant may affect device reliability; exceeding
the ratings could cause parmanent damage. The parameters apply independently. The device
should be operated within the limits specified under DC and AC Characteristics.
CAPACITANCE (TA = 25 ˚C, VDD = 0 V)
Parameter
Input capacitance
Output capacitance
I/O capacitance
Symbol
CIN
Test Conditions
MIN.
TYP.
MAX.
15
Unit
pF
f = 1 MHz
Unmeasured pins returned to 0 V.
COUT
CIO
15
pF
15
pF
29
µPD75P3216
SYSTEM CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Resonator
Ceramic
Recommended Constant
Parameter
Test Conditions
MIN. TYP. MAX.
Unit
Note 2
Oscillator
1.0
6.0
MHz
X2
X1
resonator
frequency (fx) Note 1
Oscillation
C1
C2
After VDD reaches oscil-
4
ms
MHz
ms
stabilization time Note 3 lation voltage range MIN.
V
DD
Note 2
Crystal
Oscillator
1.0
6.0
X2
X1
resonator
frequency (fx) Note 1
C1
C2
Oscillation
VDD = 4.5 to 5.5 V
10
30
stabilization time Note 3
V
DD
Note 2
External
clock
X1 input
1.0
6.0
MHz
ns
frequency (fx) Note 1
X1 input
X1
X2
83.3
500
high/low level width
(tXH, tXL)
Notes 1. The oscillator frequency and X1 input frequency indicate characteristics of the oscillator only. For the
instruction execution time, refer to the AC characteristics.
2. When the oscillator frequency is 4.19 MHz < fx ≤ 6.0 MHz, setting the processor clock control register
(PCC) to 0011 results in 1 machine cycle being less than the required 0.95 µs. Therefore, set PCC
to a value other than 0011.
3. The oscillation stabilization time is necessary for oscillation to stabilize after applying VDD or releasing
the STOP mode.
Caution When using the system clock oscillator, wiring in the area enclosed with the dotted line should be
carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as VSS.
• Do not ground it to the ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
30
µPD75P3216
DC CHARACTERISTICS (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Unit
mA
mA
V
Output current, low
IOL
Per pin
15
150
Total for all pins
Ports 2, 3, 8, 9
Input voltage, high
VIH1
VIH2
VIH3
2.7 ≤ VDD ≤ 5.5 V 0.7VDD
1.8 ≤ VDD < 2.7 V 0.9VDD
2.7 ≤ VDD ≤ 5.5 V 0.8VDD
1.8 ≤ VDD < 2.7 V 0.9VDD
VDD
VDD
V
Ports 0, 1, 6, RESET
VDD
V
VDD
V
Port 5
N-ch open-drain 2.7 ≤ VDD ≤ 5.5 V 0.7VDD
1.8 ≤ VDD < 2.7 V 0.9VDD
VDD – 0.1
13
V
13
V
VI14
VIL1
X1
VDD
V
Input voltage, low
Ports 2, 3, 5, 8, 9
2.7 ≤ VDD ≤ 5.5 V
1.8 ≤ VDD < 2.7 V
2.7 ≤ VDD ≤ 5.5 V
1.8 ≤ VDD < 2.7 V
0
0.3VDD
0.1VDD
0.2VDD
0.1VDD
0.1
V
0
V
VIL2
Ports 0, 1, 6, RESET
X1
0
V
0
0
V
VIL3
VOH
VOL1
V
Output voltage, high
Output voltage, low
SCK, SO, ports 2, 3, 6, 8, 9 IOH = –1 mA
SCK, SO, ports 2, 3, 5, 6, 8, 9 IOL = 15 mA,
VDD – 0.5
V
0.2
2.0
V
VDD = 4.5 to 5.5 V
IOL = 1.6 mA
0.4
0.2VDD
3
V
VOL2
ILIH1
ILIH2
ILIH3
ILIL1
ILIL2
ILIL3
SB0, SB1
N-ch open-drain pull-up resistor ≥ 1 kΩ
Other pins than X1
X1
V
Input leakage
current, high
VIN = VDD
µA
µA
µA
µA
µA
µA
20
VIN = 13 V
VIN = 0 V
Port 5 (N-ch open-drain)
Other pins than port 5 and X1
X1
20
Input leakage
current, low
–3
–20
–3
Port 5 (N-ch open-drain) When an
input instruction is not executed
Port 5 (N-ch
–30
µA
open-drain)
When an input
instruction
VDD = 5.0 V
VDD = 3.0 V
–10
–3
–27
–8
µA
µA
is executed
Output leakage
current, high
ILOH1
ILOH2
ILOL
VOUT = VDD
VOUT = 13 V
VOUT = 0 V
SCK, SO/SB0, SB1, ports 2, 3, 6, 8, 9
Port 5 (N-ch open-drain)
3
µA
µA
µA
20
–3
Output leakage
current, low
Pull-up resistor
RL
VIN = 0 V
Ports 0, 1, 2, 3, 6, 8, 9
(Excluding P00 pin)
50
100
200
kΩ
31
µPD75P3216
DC CHARACTERISTICS (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Unit
V
LCD drive voltage
VLCD
VAC0 = 0
VAC0 = 1
TA = –40 to +85 °C
TA = –10 to +85 °C
2.7
2.2
1.8
VDD
VDD
VDD
4
V
V
VAC current
IVAC
VAC0 = 1, VDD = 2.0 V ± 10%
1
µA
V
LCD output voltage
deviation Note 1 (common)
LCD output voltage
deviation Note 1 (segment)
Supply current Note 2
VODC
lo = ±1 µA
lo = ±0.5 µA
6.0 MHz
VLCD0 = VLCD
0
0
±0.2
VLCD1 = VLCD × 2/3
VODS
IDD1
VLCD2 = VLCD × 1/3
2.2 V ≤ VLCD ≤ VDD
VDD = 5.0 V ± 10%
±0.2
V
Note 1
Note 3
Note 4
2.6
0.47
0.72
0.27
1.9
7.8
1.4
2.1
0.8
5.7
1.1
2.0
0.7
10
mA
mA
mA
mA
mA
mA
mA
mA
µA
Crystal oscillation VDD = 3.0 V ± 10%
IDD2
IDD1
IDD2
IDD5
C1 = C2 = 22 pF
HALT mode VDD = 5.0 V ± 10%
VDD = 3.0 V ± 10%
4.19 MHz
VDD = 5.0 V ± 10% Note 3
Crystal oscillation VDD = 3.0 V ± 10% Note 4
0.36
0.7
C1 = C2 = 22 pF
HALT mode VDD = 5.0 V ± 10%
VDD = 3.0 V ± 10%
0.23
0.05
0.02
0.02
Note 5
STOP mode
VDD = 5.0 V ± 10%
DD = 3.0 V
±10%
V
5
µA
TA = 25˚C
3
µA
Notes 1. The voltage deviation is the difference from the output voltage corresponding to the ideal value of the
segment and common outputs (VLCDn; n = 0, 1, 2).
2. Not including current flowing in on-chip pull-up resistors.
3. When the processor clock control register (PCC) is set to 0011 and the device is operated in the high-
speed mode.
4. When PCC is set to 0000 and the device is operated in the low-speed mode.
5. Set VAC0 to 0 when setting the STOP mode. If VAC0 is set to 1, the current increases by about 1
µA.
32
µPD75P3216
AC CHARACTERISTICS (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Unit
µs
CPU clock cycle
tCY
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
0.67
0.95
0
64
64
1
Note 1
time
µs
TI0 input frequency
fTI
MHz
kHz
µs
0
275
TI0 input
tTIH, tTIL
0.48
1.8
Note 2
10
high/low-level width
Interrupt input high/
low-level width
µs
tINTH, tINTL INT0
IM02 = 0
IM02 = 1
µs
µs
INT4
10
µs
KR0 to KR3
10
µs
RESET low level width
tRSL
10
µs
Notes 1. Thecycletime(minimuminstruction
execution time) of the CPU clock
(Φ) is determined by the oscillation
frequency of the connected
resonator (and external clock) and
theprocessorclockcontrolregister
(PCC). The figure at the right
indicates the cycle time tCY versus
supply voltage VDD characteristic.
2. 2tCY or 128/fx is set by setting the
interrupt mode register (IM0).
t
CY vs VDD
64
30
6
5
Guaranteed Operation
Range
µ
4
3
1
0.5
0
1
2
3
4
5
6
Supply Voltage VDD [V]
33
µPD75P3216
SERIAL TRANSFER OPERATION
2-Wire and 3-Wire Serial I/O Mode (SCK...Internal clock output): (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
VDD = 2.7 to 5.5 V
MIN.
1300
3800
tKCY1/2–50
tKCY1/2–150
150
TYP.
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SCK cycle time
tKCY1
SCK high/low-level
width
tKL1, tKH1
tSIK1
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
RL = 1 kΩ,
SINote 1 setup time
(to SCK↑)
500
SINote 1 hold time
(from SCK↑)
tKSI1
400
600
SONote 1 output delay time
from SCK↓
tKSO1
VDD = 2.7 to 5.5 V
0
250
Note 2
CL = 100 pF
0
1000
Notes 1. In the 2-wire serial I/O mode, read SB0 or SB1 instead.
2. RL and CL are the load resistance and load capacitance of the SO output lines.
2-Wire and 3-Wire Serial I/O Mode (SCK...External clock input): (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
VDD = 2.7 to 5.5 V
MIN.
800
3200
400
1600
100
150
400
600
0
TYP.
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SCK cycle time
tKCY2
SCK high/low-level
width
tKL2, tKH2
tSIK2
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
RL = 1 kΩ,
SINote 1 setup time
(to SCK↑)
SINote 1 hold time
(from SCK↑)
tKSI2
SONote 1 output delay time
from SCK↓
tKSO2
VDD = 2.7 to 5.5 V
300
Note 2
CL = 100 pF
0
1000
Notes 1. In the 2-wire serial I/O mode, read SB0 or SB1 instead.
2. RL and CL are the load resistance and load capacitance of the SO output lines.
34
µPD75P3216
SBI Mode (SCK...Internal clock output (master)): (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
VDD = 2.7 to 5.5 V
MIN.
1300
3800
tKCY3/2–50
tKCY3/2–150
150
TYP.
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SCK cycle time
tKCY3
SCK high/low-level
width
tKL3, tKH3
tSIK3
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
SB0, 1 setup time
(to SCK↑)
500
SB0, 1 hold time (from SCK↑)
SB0, 1 output delay
time from SCK↓
tKSI3
VDD = 2.7 to 5.5 V
RL = 1 kΩ,Note
CL = 100 pF
tKCY3/2
0
tKSO3
VDD = 2.7 to 5.5 V
250
0
1000
SB0, 1↓ from SCK↑
SCK↓ from SB0, 1↑
SB0, 1 low-level width
SB0, 1 high-level width
tKSB
tSBK
tSBL
tSBH
tKCY3
tKCY3
tKCY3
tKCY3
Note RL and CL are the load resistance and load capacitance of the SB0 and SB1 output lines.
SBI Mode (SCK...External clock input (slave)): (TA = –40 to +85 ˚C, VDD = 1.8 to 5.5 V)
Parameter
Symbol
Test Conditions
VDD = 2.7 to 5.5 V
MIN.
800
3200
400
1600
100
150
tKCY4/2
0
TYP.
MAX.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SCK cycle time
tKCY4
SCK high/low-level
width
tKL4, tKH4
tSIK4
VDD = 2.7 to 5.5 V
VDD = 2.7 to 5.5 V
SB0, 1 setup time
(to SCK↑)
SB0, 1 hold time (from SCK↑)
SB0, 1 output delay
time from SCK↓
tKSI4
VDD = 2.7 to 5.5 V
RL = 1 kΩ,Note
CL = 100 pF
tKSO4
VDD = 2.7 to 5.5 V
300
0
1000
SB0, 1↓ from SCK↑
SCK↓ from SB0, 1↑
SB0, 1 low-level width
SB0, 1 high-level width
tKSB
tSBK
tSBL
tSBH
tKCY4
tKCY4
tKCY4
tKCY4
Note RL and CL are the load resistance and load capacitance of the SB0 and SB1 output lines.
35
µPD75P3216
AC Timing Test Point (Excluding X1 Input)
VIH (MIN.)
VIL (MAX.)
VIH (MIN.)
VIL (MAX.)
VOH (MIN.)
VOL (MAX.)
VOH (MIN.)
VOL (MAX.)
Clock Timing
1/f
X
t
XL
t
XH
V
DD–0.1 V
X1 Input
0.1 V
TI0 Timing
1/fTI
t
TIL
t
TIH
TI0
36
µPD75P3216
Serial Transfer Timing
3-wire serial I/O mode
t
KCY1, 2
t
KL1, 2
t
KH1, 2
SCK
t
SIK1, 2
t
KSI1, 2
SI
Input Data
t
KSO1, 2
SO
Output Data
2-wire serial I/O mode
t
KCY1, 2
t
KL1, 2
t
KH1, 2
SCK
t
SIK1, 2
t
KSI1, 2
SB0, 1
t
KSO1, 2
37
µPD75P3216
Serial Transfer Timing
Bus release signal transfer
t
KCY3, 4
t
KL3, 4
t
KH3, 4
SCK
t
SIK3, 4
t
KSI3, 4
t
KSB
t
SBL
t
SBH
t
SBK
SB0, 1
t
KSO3, 4
Command signal transfer
t
KCY3, 4
t
KL3, 4
t
KH3, 4
SCK
t
SIK3, 4
t
KSB
t
SBK
t
KSI3, 4
SB0, 1
t
KSO3, 4
Interrupt input timing
t
INTL
t
INTH
INTP0, 4
KR0 to 3
RESET input timing
t
RSL
RESET
38
µPD75P3216
DATA MEMORY STOP MODE LOW SUPPLY VOLTAGE DATA RETENTION CHARACTERISTICS
(TA = –40 to +85 ˚C)
Parameter
Symbol
tSREL
Test Conditions
MIN. TYP. MAX.
Unit
µs
Release signal set time
Oscillation stabilization
wait time Note 1
0
tWAIT
Release by RESET
Release by interrupt
215/fX
ms
ms
Note 2
Notes 1. The oscillation stabillization wait time is the time during which the CPU operation is stopped to prevent
unstable operation at the oscillation start.
2. Depends on the basic interval timer mode register (BTM) settings (See the table below).
BTM3
BTM2
BTM1
BTM0
Wait Time
When fx = 4.19-MHz operation
When fx = 6.0-MHz operation
220/fx (approx. 175 ms)
217/fx (approx. 21.8 ms)
215/fx (approx. 5.46 ms)
213/fx (approx. 1.37 ms)
—
—
—
—
0
0
1
1
0
1
0
1
0
1
1
1
220/fx (approx. 250 ms)
217/fx (approx. 31.3 ms)
215/fx (approx. 7.81 ms)
213/fx (approx. 1.95 ms)
Data Retention Timing (STOP Mode Release by RESET)
Internal Reset Operation
HALT Mode
Operating Mode
STOP Mode
Data Retention Mode
V
DD
V
DDDR
t
SREL
STOP Instruction Execution
RESET
t
WAIT
Data Retention Timing (Standby Release Signal: STOP Mode Release by Interrupt Signal)
HALT Mode
Operating Mode
STOP Mode
Data Retention Mode
V
DD
V
DDDR
t
SREL
STOP Instruction Execution
Standby Release Signal
(Interrupt Request)
t
WAIT
39
µPD75P3216
DC Programming Characteristics (TA = 25 ± 5 °C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0V)
Parameter
Symbol
Test Conditions
Other than X1, X2 pins
X1, X2
MIN.
0.7 VDD
VDD – 0.5
0
TYP.
MAX.
VDD
Unit
V
Input voltage, high
VIH1
VIH2
VIL1
VIL2
ILI
VDD
V
Input voltage, low
Other than X1, X2 pins
X1, X2
0.3 VDD
0.4
V
0
V
Input leakage current
Output voltage, high
Output voltage, low
VDD supply current
VPP supply current
VIN = VIL or VIH
IOH = – 1 mA
10
µA
V
VOH
VOL
IDD
VDD – 1.0
IOL = 1.6 mA
0.4
30
30
V
mA
mA
IPP
MD0 = VIL, MD1 = VIH
Cautions 1. Keep VPP to within +13.5 V, including overshoot.
2. Apply VDD before VPP and turn it off after VPP.
AC Programming Characteristics (TA = 25 ± 5 °C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0 V)
Parameter
Symbol
Note 1
Test Conditions
MIN.
2
TYP.
MAX.
Unit
Note 2
Address setup time
tAS
tAS
µs
(vs. MD0 ↓)
MD1 setup time (vs. MD0 ↓)
Data setup time (vs. MD0 ↓)
tM1S
tDS
tOES
tDS
2
2
2
µs
µs
µs
Note 2
Address hold time
tAH
tAH
(vs. MD0 ↑)
Data hold time (vs. MD0 ↑)
tDH
tDF
tDH
tDF
2
0
µs
MD0 ↑ → data output float
130
ns
delay time
VPP setup time (vs. MD3 ↑)
VDD setup time (vs. MD3 ↑)
Initial program pulse width
tVPS
tVDS
tPW
tVPS
tVCS
tPW
tOPW
tCES
tDV
tOEH
tOR
—
2
2
µs
µs
0.95
0.95
2
1.0
1.05
21.0
ms
ms
µs
Additional program pulse width tOPW
MD0 setup time (vs. MD1 ↑)
MD0 ↓ → data output delay time tDV
tM0S
MD0 = MD1 = VIL
1
µs
MD1 hold time (vs. MD0 ↑)
MD1 recovery time (vs. MD0 ↓)
Program counter reset time
X1 input high-, low-level width
X1 input frequency
tM1H
tM1H + tM1R ≥ 50 µs
2
2
µs
tM1R
tPCR
tXH, tXL
fX
µs
10
µs
—
0.125
µs
—
4.19
MHz
µs
Initial mode set time
t1
—
2
2
2
2
MD3 setup time (vs. MD1 ↑)
MD3 hold time (vs. MD1 ↓)
tM3S
tM3H
tM3SR
—
µs
—
µs
MD3 setup time (vs. MD0 ↓)
—
When program memory is read
When program memory is read
µs
Note 2
Address
→ data output tDAD
tACC
2
µs
delay time
Note 2
Address
→ data output tHAD
tOH
When program memory is read
0
2
130
ns
hold time
MD3 hold time (vs. MD0 ↑)
tM3HR
tDFR
—
—
When program memory is read
When program memory is read
µs
µs
MD3 ↓ → data output float
2
delay time
Notes 1. Symbol of corresponding µPD27C256A
2. The internal address signal is incremented by one at the rising edge of the fourth X1 input and is not
connected to a pin.
40
µPD75P3216
Program Memory Write Timing
t
t
VPS
V
PP
VPP
V
DD
VDS
V
DD
DD+1
V
t
XH
V
DD
X1
D0/P60/KR0-
D3/P63/KR3
D4/P50-
t
XL
Data input
Data output
Data input
Data input
D7/P53
t
DS
t
DS
t
DH tAH
t
AS
t
I
t
DH
t
DV
t
DF
MD0/P30
MD1/P31
t
PW
t
M1R
t
M0S
t
OPW
t
PCR
t
M1S
t
M1H
MD2/P32
MD3/P33
t
M3S
t
M3H
Program Memory Read Timing
t
VPS
V
PP
VPP
VDD
t
VDS
VDD+1
VDD
t
XH
V
DD
X1
t
XL
t
DAD
t
HAD
D0/P60/KR0-
D3/P63/KR3
D4/P50-
Data output
Data output
D7/P53
t
DV
t
DFR
t
I
t
M3HR
MD0/P30
MD1/P31
t
PCR
MD2/P32
MD3/P33
t
M3SR
41
µPD75P3216
10. CHARACTERISTIC CURVE (REFERENCE VALUE)
I
DD vs VDD (System clock : 6.0 MHz Crystal resonator)
(TA = 25 °C)
10
5.0
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
HALT mode
1.0
0.5
0.1
0.05
0.01
0.005
X1
X2
Crystal
resonator
6.0 MHz
22 pF
22 pF
V
DD
0.001
0
1
2
3
4
5
6
7
8
Supply Voltage VDD (V)
42
µPD75P3216
IDD vs VDD (System clock : 4.19 MHz Crystal resonator)
(TA = 25 °C)
10
5.0
PCC = 0011
PCC = 0010
PCC = 0001
1.0
0.5
PCC = 0000
HALT mode
0.1
0.05
0.01
0.005
X1
X2
Crystal
resonator
4.19 MHz
22 pF
22 pF
VDD
0.001
0
1
2
3
4
5
6
7
8
Supply Voltage VDD (V)
43
µPD75P3216
11. PACKAGE DRAWINGS
48 PIN PLASTIC SHRINK SOP (375 m il)
48
25
detail of lead end
1
24
A
H
I
J
N
C
L
B
D
M
M
P48GT-65-375B-1
NOTE
ITEM
A
B
MILLIMETERS
16.21 MAX.
0.63 MAX.
INCHES
0.639 MAX.
0.025 MAX.
Each lead centerline is located within 0.10
mm (0.004 inch) of its true position (T.P.) at
maximum material condition.
C
0.65 (T.P.)
0.026 (T.P.)
+0.004
±
0.012
D
E
0.30 0.10
–0.005
±
±
0.125 0.075
0.005 0.003
F
2.0 MAX.
0.079 MAX.
±
±
G
H
I
1.7 0.1
0.067 0.004
+0.012
–0.013
±
10.0 0.3
0.394
±
±
8.0 0.2
0.315 0.008
+0.009
–0.008
±
0.039
J
1.0 0.2
+0.10
+0.004
0.15
0.006
K
L
–0.05
–0.002
+0.008
–0.009
±
0.5 0.2
0.020
M
N
0.10
0.10
0.004
0.004
44
µPD75P3216
12. RECOMMENDED SOLDERING CONDITIONS
The µPD75P3216 should be soldered and mounted under the conditions recommended in the table below.
For details of recommended soldering conditions, refer to the information document “Semiconductor Device
Mounting Technology Manual” (C10535E).
For soldering methods and conditions other than those recommended below, contact an NEC Sales representative.
Table 12-1. Surface Mounting Type Soldering Conditions
µPD75P3216GT: 48-pin plastic shrink SOP (375 mil, 0.65-mm pitch)
Soldering
Soldering Conditions
Symbol
Method
Infrared rays
reflow
Peak package's surface temperature: 235 ˚C, Reflow time: 30 seconds or less
(at 210 ˚C or higher), Number of reflow processes: Twice max.
Number of days: 7Note (after that, prebaking is necessary at 125 °C for 10 hours)
<Precaution>
IR35-107-2
Products other than those supplied in thermal-resistant tray (magazine, taping, and non-
thermal-resistant tray) cannot be baked in their packs.
VPS
Peak package's surface temperature: 215 ˚C, Reflow time: 40 seconds or less
(at 200 ˚C or higher), Number of reflow processes: Twice max.
Number of days: 7Note (after that, prebaking is necessary at 125 °C for 10 hours)
<Precaution>
VP15-107-2
Products other than those supplied in thermal-resistant tray (magazine, taping, and non-
thermal-resistant tray) cannot be baked in their packs.
Wave soldering
Partial heating
Solder temperature: 260 ˚C or below, Flow time: 10 seconds or less, Number of
flow process: 1, Preheating temperature: 120 ˚C or below (Package surface temperature)
Number of days: 7Note (after that, prebaking is necessary at 125 °C for 10 hours)
WS60-107-1
—
Pin temperature: 300 ˚C or below, Time: 3 seconds or less (per device side)
Note The number of days during which the product can be stored at 25 °C, 65 % RH max. after the dry pack
has been opened.
Caution Use of more than one soldering method should be avoided (except for partial heating).
45
µPD75P3216
APPENDIX A. µPD753108, 753208, AND 75P3216 FUNCTIONAL LIST
Parameter
Program memory
µPD753108
µPD753208
µPD75P3216
Mask ROM
0000H-1FFFH
(8192 × 8 bits)
One-time PROM
0000H-3FFFH
(16384 × 8 bits)
Data memory
000H-1FFH
(512 × 4 bits)
CPU
75XL CPU
Instruction
When main system
clock is selected
•
•
0.95, 1.91, 3.81, 15.3 µs (@ 4.19-MHz operation)
0.67, 1.33, 2.67, 10.7 µs (@ 6.0-MHz operation)
execution
time
When subsystem
clock is selected
122 µs (@ 32.768-kHz
None
operation)
I/O port
CMOS input
8 (on-chip pull-up resistors can
be specified by software: 7)
6 (on-chip pull-up resistors can be specified by software: 5)
CMOS input/output
20 (on-chip pull-up resistors can be specified by software)
N-ch open drain
input/output
4 (on-chip pull-up resistors can be specified by software,
withstand voltage is 13 V)
4 (no mask option, withstand
voltage is 13 V)
Total
32
30
LCD controller/driver
Segment selection: 16/20/24
(can be changed to CMOS
input/output port in 4 time-
unit; max. 8)
Segment selection: 4/8/12 segments
(can be changed to CMOS input/output port in 4 time-unit;
max. 8)
Display mode selection: static, 1/2 duty (1/2 bias), 1/3 duty (1/2 bias), 1/3 duty (1/3 bias),
1/4 duty (1/3 bias)
On-chip split resistor for LCD driver can be specified by
using mask option.
No on-chip split resistor for
LCD driver
Timer
5 channels
5 channels
• 8-bit timer/event
• 8-bit timer counter: 2 channels
counter: 3 channels
(Can be used as 16-bit
timer/event counter, carrier
generator, timer with gate)
• Basic interval timer/
watchdog timer: 1 channel
• Watch timer: 1 channel
(Can be used as 16-bit timer counter, carrier generator,
timer with gate)
• 8-bit timer/event counter: 1 channel
• Basic interval timer/watchdog timer: 1 channel
• Watch timer: 1 channel
Clock output (PCL)
Buzzer output (BUZ)
• Φ, 524, 262, 65.5 kHz
(Main system clock: @ 4.19-MHz operation)
• Φ, 750, 375, 93.8 kHz
(Main system clock: @ 6.0-MHz operation)
• 2, 4, 32 kHz
• 2, 4, 32 kHz
(Main system clock: @
4.19-MHz operation or sub-
system clock: @ 32.768-kHz
operation)
(Main system clock: @ 4.19-MHz operation)
• 2.93, 5.86, 46.9 kHz
(Main system clock: @ 6.0-MHz operation)
• 2.86, 5.72, 45.8 kHz
(Main system clock: @
6.0-MHz operation)
Serial interface
3 modes are available
• 3-wire serial I/O mode ... MSB/LSB can be selected for transfer top bit
• 2-wire serial I/O mode
• SBI mode
SCC register
Contained
None
SOS register
Vectored interrupt
External: 3, internal: 5
External: 2, internal: 5
46
µPD75P3216
Parameter
µPD753108
External: 1, internal: 1
VDD = 1.8 to 5.5 V
µPD753208
µPD75P3216
Test input
Operation supply voltage
Operating ambient temperature
Package
TA = –40 to +85°C
• 64-pin plastic QFP
(14 × 14 mm)
• 48-pin plastic shrink SOP
(375 mil, 0.65-mm pitch)
• 64-pin plastic QFP
(12 × 12 mm)
47
µPD75P3216
APPENDIX B. DEVELOPMENT TOOLS
The following development tools have been provided for system development using the µPD75P3216.
In the 75XL series, relocatable assemblers common to the series can be used in combination with the device files for
each product type.
RA75X relocatable assembler
Host machine
Part No. (name)
OS
Supply medium
3.5” 2HD
PC-9800 Series
MS-DOSTM
µS5A13RA75X
µS5A10RA75X
Ver.3.30 to
5” 2HD
Note
Ver.6.2
IBM PC/ATTM
or compatible
Refer to “OS for
3.5” 2HC
5” 2HC
µS7B13RA75X
µS7B10RA75X
IBM PCs”
Device file
Host machine
Part No. (name)
OS
Supply medium
3.5” 2HD
PC-9800 Series
MS-DOSTM
Ver.3.30 to
µS5A13DF753208
µS5A10DF753208
5” 2HD
Note
Ver.6.2
IBM PC/AT
Refer to “OS for
3.5” 2HC
5” 2HC
µS7B13DF753208
µS7B10DF753208
or compatible
IBM PCs”
Note Ver. 5.00 or later includes a task swapping function, but this software is not able to use that function.
Remark Operation of the PG-1500 controller is guaranteed only when using the host machine and OS described
above.
48
µPD75P3216
PROM Write Tools
Hardware
PG-1500
This is a PROM programmer that can program single-chip microcomputer with PROM in
stand alone mode or under control of host machine when connected with supplied
accessory board and optional programmer adapter.
It can also program typical PROMs in capacities ranging from 256 K to 4 M bits.
PA-75P3216GT
This is a PROM programmer adapter for the µPD75P3216GT.
It can be used when connected to a PG-1500.
Software
PG-1500 controller
Connects PG-1500 to host machine with serial and parallel interface and controls PG-1500
on host machine.
Host machine
Part No. (name)
OS
Supply medium
3.5” 2HD
PC-9800 Series
MS-DOS
µS5A13PG1500
µS5A10PG1500
Ver.3.30 to
5” 2HD
Ver.6.2Note
Refer to “OS for
IBM PCs”
IBM PC/AT
3.5” 2HD
5” 2HC
µS7B13PG1500
µS7B10PG1500
or compatible
Note Ver. 5.00 or later includes a task swapping function, but this software is not able to use that function.
Remark Operation of the PG-1500 controller is guaranteed only when using the host machine and OS described
above.
49
µPD75P3216
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the µPD75P3216.
Various system configurations using these in-circuit emulators are listed below.
Hardware IE-75000-RNote 1
The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging
during development of application systems using the 75X or 75XL Series products.
For development of the µPD753208 subseries, the IE-75000-R is used with optional
emulation board (IE-75300-R-EM) and emulation probe (EP-753208GT-R).
Highly efficient debugging can be performed when connected to host machine and PROM
programmer.
The IE-75000-R includes a connected emulation board (IE-75000-R-EM).
IE-75001-R
The IE-75001-R is an in-circuit emulator to be used for hardware and software debugging
during development of application systems using the 75X or 75XL Series products.
The IE-75001-R is used in combination with optional emulation board (IE-75300-R-EM) and
emulation probe (EP-753208GT-R).
Highly efficient debugging can be performed when connected to host machine and PROM
programmer.
IE-75300-R-EM
EP-753208GT-R
This is an emulation board for evaluating application systems using the µPD75P3216.
It is used in combination with the IE-75000-R or IE-75001-R.
This is an emulation probe for the µPD75P3216GK.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-
EM.
EV-9500GT-48 It includes a flexible board (EV-9500GT-48) to facilitate connections with target system.
Software
IE control program
This program can control the IE-75000-R or IE-75001-R on a host machine when connected
to the IE-75000-R or IE-75001-R via an RS-232-C or Centronics interface.
Host machine
Part No. (name)
OS
Supply medium
3.5” 2HD
PC-9800 Series
MS-DOS
µS5A13IE75X
µS5A10IE75X
Ver.3.30 to
5” 2HD
Ver.6.2Note 2
Refer to “OS for
IBM PCs”
IBM PC/AT
3.5” 2HC
5” 2HC
µS7B13IE75X
µS7B10IE75X
or compatible
Notes 1. This is a maintenance product.
2. Ver. 5.00 or later includes a task swapping function, but this software is not able to use that function.
Remarks 1. Operation of the IE control program is guaranteed only when using the host machine and OS described
above.
2. The generic name for the µPD753204, 753206, 753208, and 75P3216 is the µPD753208 subseries.
50
µPD75P3216
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OS
Version
PC DOSTM
Ver.5.02 to Ver.6.3
Note
Note
J6.1/V
to J6.3/V
MS-DOS
Ver.5.0 to Ver.6.22
Note
Note
5.0/V
to 6.2/V
Note
IBM DOSTM
J5.02/V
Note Only English version is supported.
Caution Ver. 5.0 or later include a task swapping function, but this software is not able to use that function.
51
µPD75P3216
APPENDIX C. RELATED DOCUMENTS
Some of the related documents are preliminary but are not marked as such.
Device related documents
Document Number
Japanese English
U10166J U10166E
U10241J
Document Name
µPD753204, 753206, 753208 preliminary product information
µPD75P3216 data sheet
This document
U10158E
µPD753208 user’s manual
U10158J
U10453J
75XL series selection guide
U10453E
Development tool related documents
Document Number
Japanese English
EEU-1416
Document Name
Hardware
Software
IE-75000-R/IE-75001-R user’s manual
IE-75300-R-EM user’s manual
EP-753208GT-R user’s manual
PG-1500 user’s manual
EEU-846
U11354J
U10739J
EEU-651
EEU-731
EEU-730
EEU-704
U11354E
U10739E
EEU-1335
EEU-1346
EEU-1363
EEU-1291
RA75X assembler package user’s manual
Operation
Language
PG-1500 controller user’s manual
PC-9800 series
(MS-DOS) base
IBM PC series
(PC DOS) base
EEU-5008
U10540E
Other related documents
Document Number
Japanese English
Document Name
IC package manual
C10943X
C10535J
C11531J
C10983J
MEM-539
MEI-603
U11416J
Semiconductor device mounting technology manual
Quality grade on NEC semiconductor devices
NEC semiconductor device reliability/quality control system
Static electricity discharge (ESD) test
C10535E
C11531E
C10983E
–
Semiconductor device quality guarantee guide
Microcomputer related product guide - other manufacturers
MEI-1202
–
Caution The related documents listed above are subject to change without notice. Be sure to use the latest
documents for designing, etc.
52
µPD75P3216
[MEMO]
53
µPD75P3216
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be taken
to stop generation of static electricity as much as possible, and quickly dissipate
it once, when it has occurred. Environmental control must be adequate. When
it is dry, humidifier should be used. It is recommended to avoid using insulators
that easily build static electricity. Semiconductor devices must be stored and
transported in an anti-static container, static shielding bag or conductive
material. All test and measurement tools including work bench and floor should
begrounded. Theoperatorshouldbegroundedusingwriststrap. Semiconductor
devices must not be touched with bare hands. Similar precautions need to be
taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level
may be generated due to noise, etc., hence causing malfunction. CMOS devices
behave differently than Bipolar or NMOS devices. Input levels of CMOS devices
must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have
a possibility of being an output pin. All handling related to the unused pins must
be judged device by device and related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset function
have not yet been initialized. Hence, power-on does not guarantee out-pin
levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after
power-on for devices having reset function.
54
µPD75P3216
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
product in your application, please contact the NEC office in your country to obtain a list of authorized
representatives and distributors. They will verify:
• Device availability
• Ordering information
• Product release schedule
• Availability of related technical literature
• Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
• Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
NEC Electronics Inc. (U.S.)
Santa Clara, California
Tel: 800-366-9782
NEC Electronics Hong Kong Ltd.
Hong Kong
Tel: 2886-9318
NEC Electronics (Germany) GmbH
Benelux Office
Eindhoven, The Netherlands
Tel: 040-2445845
Fax: 800-729-9288
Fax: 2886-9022/9044
Fax: 040-2444580
NEC Electronics (Germany) GmbH
Duesseldorf, Germany
Tel: 0211-65 03 02
NEC Electronics Hong Kong Ltd.
Seoul Branch
Seoul, Korea
NEC Electronics (France) S.A.
Velizy-Villacoublay, France
Tel: 01-30-67 58 00
Fax: 0211-65 03 490
Tel: 02-528-0303
Fax: 02-528-4411
Fax: 01-30-67 58 99
NEC Electronics (UK) Ltd.
Milton Keynes, UK
Tel: 01908-691-133
NEC Electronics Singapore Pte. Ltd.
United Square, Singapore 1130
Tel: 253-8311
NEC Electronics (France) S.A.
Spain Office
Madrid, Spain
Fax: 01908-670-290
Fax: 250-3583
Tel: 01-504-2787
NEC Electronics Italiana s.r.1.
Milano, Italy
Tel: 02-66 75 41
Fax: 01-504-2860
NEC Electronics Taiwan Ltd.
Taipei, Taiwan
Tel: 02-719-2377
NEC Electronics (Germany) GmbH
Scandinavia Office
Fax: 02-66 75 42 99
Fax: 02-719-5951
Taeby, Sweden
Tel: 08-63 80 820
NEC do Brasil S.A.
Sao Paulo-SP, Brasil
Tel: 011-889-1680
Fax: 011-889-1689
Fax: 08-63 80 388
J96. 8
55
µPD75P3216
[MEMO]
MS-DOS is a trademark of Microsoft Corporation.
IBM DOS, PC/AT, and PC DOS are trademarks of IBM Corporation.
The export of this product from Japan is regulated by the Japanese government. To export this product may be prohibited
without governmental license, the need for which must be judged by the customer. The export or re-export of this product
from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
相关型号:
UPD75P3216GT-A
Microcontroller, 4-Bit, OTPROM, 6MHz, MOS, PDSO48, 0.375 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, SSOP-48
NEC
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