UPC1909GS-A [NEC]

Dual Switching Controller, 1.2A, 500kHz Switching Freq-Max, BIPolar, PDSO16, 0.300 INCH, PLASTIC, SOP-16;
UPC1909GS-A
型号: UPC1909GS-A
厂家: NEC    NEC
描述:

Dual Switching Controller, 1.2A, 500kHz Switching Freq-Max, BIPolar, PDSO16, 0.300 INCH, PLASTIC, SOP-16

开关 光电二极管
文件: 总36页 (文件大小:187K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
BIPOLAR ANALOG INTEGRATED CIRCUIT  
µPC1909  
SWITCHING REGULATOR CONTROL IC  
DESCRIPTION  
The µPC1909 is a switching regulator control IC ideal for primary side control of active-clamp typeNote DC/DC  
converters. This IC has 2 outputs employing a totem-pole circuit with peak output current 1.2 A, and is capable of  
directly driving a power MOS FET. As a result, it has been possible to realize primary side control of an active-clamp  
type converter on a single chip.  
Note It is necessary to obtain license from Vicor Corporation before using the µPC1909 in an active-clamp type circuit.  
FEATURES  
2 on-chip outputs; for Q and Q  
Capable of directly driving a power MOS FET  
Drive supply voltage range: 7 to 24 V  
On-chip remote control circuit  
On-chip pulse-by-pulse overcurrent protection circuit  
On-chip overvoltage latch circuit  
ORDERING INFORMATION  
Part Number  
µPC1909CX  
µPC1909GS  
Package  
16-pin plastic DIP (7.62 mm (300))  
16-pin plastic SOP (7.62 mm (300))  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark shows major revised points.  
Document No. G14309EJ2V0DS00 (2nd edition)  
Date Published November 2000 NS CP(K)  
Printed in Japan  
©
1999  
µPC1909  
BLOCK DIAGRAM  
C
T
R
T
V
REF  
DTC  
1
FB  
12  
OUT  
11  
1
EMI  
10  
1
V
CC  
16  
15  
14  
13  
9
PWM  
comparator 1  
Reference  
power  
supply  
Oscillator  
+
+
OLS  
ON/OFF  
control  
Over-  
Over-  
PWM  
comparator 2  
voltage  
current  
protection  
protection  
1
2
3
4
5
6
7
8
OV  
C
T2  
GND  
OC  
DTC  
2
OUT  
2
ON/OFF EMI  
2
2
Data Sheet G14309EJ2V0DS00  
µPC1909  
PIN CONFIGURATION (Top View)  
16-pin plastic DIP (7.62 mm (300))  
µPC1909CX  
16-pin plastic SOP (7.62 mm (300))  
µPC1909GS  
OV  
CT2  
1
2
3
16  
15  
14  
CT  
RT  
GND  
OC  
VREF  
DTC1  
4
5
6
7
8
13  
12  
11  
10  
9
DTC2  
OUT2  
FB  
OUT1  
EMI1  
VCC  
ON/OFF  
EMI2  
Pin Name  
CT  
: Timing Capacitance  
CT2  
: OLS Shift Control  
: OUT1 Dead Time Control  
: OUT2 Dead Time Control  
: OUT1 Emitter  
DTC1  
DTC2  
EMI1  
EMI2  
FB  
: OUT2 Emitter  
: Feedback Input  
GND  
OC  
: Ground  
: Over Current Protection  
: ON/OFF Control  
: OUT1 Output  
ON/OFF  
OUT1  
OUT2  
OV  
: OUT2 Output  
: Over Voltage Protection  
: Timing Resistance  
: Power Supply  
RT  
VCC  
VREF  
: Reference Voltage  
3
Data Sheet G14309EJ2V0DS00  
µPC1909  
CONTENTS  
1. PIN FUNCTION LIST........................................................................................................................................... 5  
2. ELECTRICAL SPECIFICATIONS.........................................................................................................................6  
3. OPERATION OVERVIEW...................................................................................................................................... 11  
3.1 Startup............................................................................................................................................................. 11  
3.2 Steady Operation............................................................................................................................................ 13  
3.3 Overcurrent Limitation Operation................................................................................................................. 15  
3.4 On/Off Operation.............................................................................................................................................16  
3.5 Overvoltage Protection Operation................................................................................................................ 17  
4. SETTINGS..............................................................................................................................................................18  
4.1 Controller Settings......................................................................................................................................... 18  
4.2 Startup Circuit, Low Voltage Malfunction Prevention Circuit Settings..................................................... 18  
4.3 Oscillator Settings.......................................................................................................................................... 21  
4.4 Dead Time Setting.......................................................................................................................................... 22  
4.4.1 Level shift setting..................................................................................................................................... 22  
4.4.2 Dead time adjustment.............................................................................................................................. 24  
4.5 Duty Settings...................................................................................................................................................25  
4.5.1 Maximum duty setting.............................................................................................................................. 25  
4.5.2 Minimum duty limit................................................................................................................................... 25  
4.5.3 Soft start...................................................................................................................................................25  
4.6 Remote Control...............................................................................................................................................26  
4.7 Overcurrent Limiter Settings......................................................................................................................... 27  
4.8 Overvoltage Protection Circuit Setting.........................................................................................................28  
4.9 Output Circuit..................................................................................................................................................29  
5. PACKAGE DRAWINGS........................................................................................................................................30  
6. RECOMMENDED SOLDERING CONDITIONS................................................................................................... 32  
4
Data Sheet G14309EJ2V0DS00  
µPC1909  
1. PIN FUNCTION LIST  
Pin No.  
1
Symbol  
OV  
Function  
Overvoltage protection  
This is the input pin of the overvoltage detection comparator. Directly connect this pin to GND when not used.  
2
CT2  
OLS shift setting  
The resistor that determines the amount of level shift for dCT (an internal triangle wave that is a level-shifted CT)  
is connected between this pin and the VREF pin.  
3
4
5
6
7
GND  
Ground  
This is the signal ground pin.  
OC  
Overcurrent protection  
This is the input pin of the overcurrent detection comparator. Directly connect this pin to GND when not used.  
DTC2  
OUT2  
ON/OFF  
OUT2 dead time setting  
This pins sets the dead time of the OUT2 output.  
OUT2 output  
This is the subswitch drive output pin.  
ON/OFF control  
The output circuit can be switched on or off by inputting an external signal.  
Directly connect this pin to VREF when not used.  
8
EMI2  
OUT2 emitter  
This is a power supply ground pin. This pin must be isolated from the signal ground pin (GND).  
9
VCC  
Power supply  
10  
EMI1  
OUT1 emitter  
This is a power supply ground pin. This pin must be isolated from the signal ground pin (GND).  
11  
12  
13  
14  
15  
16  
OUT1  
FB  
OUT1 output  
This is the main switch drive output pin.  
Feedback input  
This is the feedback input pin of PWM comparators 1 and 2.  
DTC1  
VREF  
RT  
OUT1 dead time setting  
This pin sets the maximum duty of the OUT1 output and determines the minimum duty of the OUT2 output.  
Reference voltage  
This pin outputs a 4.9-V TYP. reference voltage.  
Timing resistance  
The resistor that determines the oscillation frequency is connected between this pin and GND.  
CT  
Timing capacitance  
The capacitor that determines the oscillation frequency is connected between this pin and GND.  
This pin outputs a triangle wave.  
5
Data Sheet G14309EJ2V0DS00  
µPC1909  
2. ELECTRICAL SPECIFICATIONS  
Absolute Maximum Ratings (Unless otherwise specified, TA = 25°C)  
Parameter  
Symbol  
VCC  
µPC1909CX  
µPC1909GS  
Unit  
V
Power Supply Voltage  
26  
100  
1.2  
Output Current (DC, per output)  
Output Current (peak, per output)  
Total Power Dissipation  
IC (DC)  
IC (peak)  
PT  
mA  
A
1000  
694  
mW  
°C  
°C  
°C  
Operating Ambient Temperature  
Operating Junction Temperature  
Storage Temperature  
TA  
20 to +85  
20 to +150  
55 to +150  
TJ  
Tstg  
Caution  
Product quality may suffer if the absolute maximum rating is exceeded even momentarily for  
any parameter. That is, the absolute maximum ratings are rated values at which the product is  
on the verge of suffering physical damage, and therefore the product must be used under  
conditions that ensure that the absolute maximum ratings are not exceeded.  
Recommended Operating Conditions  
Parameter  
Power Supply Voltage  
Oscillation Frequency  
Symbol  
VCC  
fOSC  
CL  
MIN.  
7
TYP.  
10  
MAX.  
24  
Unit  
V
50  
200  
2200  
500  
kHz  
pF  
Output Load Capacitance  
Timing Resistance  
3000  
RT  
10  
kΩ  
°C  
Operating Junction Temperature  
TJ  
20  
+100  
Caution The recommended operating range may be exceeded without causing any problems provided  
that the absolute maximum ratings are not exceeded. However, if the device is operated in a  
way that exceeds the recommended operating conditions, the margin between the actual  
conditions of use and the absolute maximum ratings is small, and therefore thorough  
evaluation is necessary. The recommended operating conditions do not imply that the device  
can be used with all values at their maximum values.  
6
Data Sheet G14309EJ2V0DS00  
µPC1909  
Electrical Characteristics (Unless otherwise specified, TA = 25°C, VCC = 10 V, RT = 10 k, fosc = 200 kHz)  
Block  
Total  
Parameter  
Standby Current  
Symbol  
ICC (SB)  
ICC  
Conditions  
MIN.  
TYP.  
0.1  
12  
9
MAX.  
Unit  
mA  
mA  
V
VCC = 7 V  
Without load  
Circuit Current  
6
8
3
18  
10  
5
Under-  
Voltage  
Lockout  
Circuit  
Startup Threshold Voltage  
VCC (L to H)  
VH  
Operating Voltage Hysteresis  
Width  
4
V
Reference  
Voltage  
Output Voltage  
Line Regulation  
VREF  
IREF = 0 A  
4.7  
4.9  
1
5.1  
10  
V
REGIN  
8 V VCC 15 V,  
mV  
IREF = 0 A  
Load Regulation  
REGL  
1 mA IREF 4 mA  
6
12  
mV  
Output Voltage Temperature  
Coefficient  
VREF/T  
10°C TA +85°C,  
400  
(700)  
µV/°C  
IREF = 0 A  
Short Circuit Current  
IO short  
fOSC  
IREF = 0 A  
15  
200  
1
mA  
kHz  
%
Oscillation  
Oscillation Frequency  
Frequency Line Regulation  
180  
220  
(5)  
f/V  
f/T  
8 V VCC 15 V  
Frequency Temperature  
Coefficient  
10°C TA +85°C  
2
%
PWM  
Input Bias Current  
IB (COMP1)  
IB (COMP2)  
VTH (L)  
VCOMP1 = VREF  
VCOMP2 = VREF  
10  
10  
µA  
µA  
V
Comparator  
Low-level Threshold Voltage  
High-level Threshold Voltage  
1.5  
3.5  
3
VTH (H)  
V
Dead time Temperature  
Coeficient  
DT/T  
10°C TA +85°C,  
%
VD = 0.46 VREF  
Output  
Low-level Output Voltage  
High-level Output Voltage  
Rise Time  
VOL  
VOH  
ISINK = 3 mA  
0.5  
V
V
V
CC  
1.6  
ISOURCE = 30 mA  
tr  
RL = 15 , CL = 2200 pF  
RL = 15 , CL = 2200 pF  
60  
40  
ns  
ns  
V
Fall Time  
tf  
Remote  
Control  
Input Voltage at Output ON  
Input Voltage at Output OFF  
Hysteresis Width  
VIN (ON)  
VIN (OFF)  
VH  
2.4  
2.2  
0.1  
190  
2.6  
2.4  
0.2  
210  
200  
150  
2.4  
2.8  
2.6  
0.3  
230  
V
V
Overcurrent  
Latch  
Overcurrent Threshold Voltage  
Input Bias Current  
VTH (OC)  
IB (OC)  
td (OC)  
VTH (OV)  
IB (OV)  
VR (OV)  
td (OV)  
mV  
µA  
ns  
V
VCC = 0 V  
Delay to Output  
Overvoltage  
Latch  
Overvoltage Threshold Voltage  
Input Bias Current  
2
2.8  
4
VOV = VREF  
µA  
V
OVL Reset Voltage  
Delay to Output  
2
750  
ns  
Remark Values in parentheses ( ) represent reference values.  
7
Data Sheet G14309EJ2V0DS00  
µPC1909  
Typical Characteristics Curves (Unless otherwise specified, TA = 25°C, VCC = 10 V, Reference Values)  
P
T
vs. T  
A
Under-Voltage Lockout Circuit  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
15  
12.5  
10  
µ
µ
PC1909CX  
125 °C/W  
PC1909GS  
7.5  
5
180 °C/W  
2.5  
V
H
V
CC (H to L)  
V
CC (L to H)  
0
25  
50  
75  
100  
125  
150  
0
2.5  
5
7.5  
10  
12.5  
15  
T
A
- Ambient Temperature - °C  
VCC - Supply Voltage - V  
I
CC vs. VCC  
ICC vs. VCC (During OVL Operation)  
18  
16  
14  
12  
10  
18  
16  
14  
12  
10  
V
H
V
H
0.8  
0.4  
0.8  
0.4  
f
OSC = 200 kHz  
CC (SB)  
I
f
OSC = 200 kHz  
CC (SB)  
I
Without load  
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
V
CC - Supply Voltage - V  
VCC - Supply Voltage - V  
I
CC(SB) vs. T  
A
VOUT1 vs. VIN  
250  
200  
150  
100  
50  
20  
15  
10  
5
µ
V
IN (OFF)  
V
IN (ON)  
0
25  
0
25  
50  
75  
100  
0
1
2
3
4
5
6
T
A
- Ambient Temperature - °C  
VIN - Remote Control Voltage - V  
8
Data Sheet G14309EJ2V0DS00  
µPC1909  
VREF vs. TA  
fosc vs. RT, CT  
30  
20  
1000  
500  
10  
CT = 220 pF  
0
100  
50  
10  
20  
30  
CT = 1000 pF  
CT = 470 pF  
25  
0
25  
50  
75  
100  
10  
50  
100  
TA - Ambient Temperature - °C  
RT - Timing Resistance - kΩ  
fosc vs. TA  
VOH, VOL vs. TA  
VCC  
225  
220  
215  
210  
205  
200  
195  
190  
185  
180  
175  
1  
VCC  
1.5  
VCC  
2  
1.53  
1.49  
1.45  
25  
0
25  
50  
75  
100  
–25  
0
25  
50  
75  
100  
TA - Ambient Temperature - °C  
TA - Ambient Temperature - °C  
tf, tr vs. TA (OUT1)  
tf, tr vs. TA (OUT2)  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
fOSC = 555 kHz  
fOSC = 555 kHz  
tr  
tf  
tr  
tf  
25  
0
25  
50  
75  
100  
25  
0
25  
50  
75  
100  
TA - Ambient Temperature - °C  
TA - Ambient Temperature - °C  
9
Data Sheet G14309EJ2V0DS00  
µPC1909  
Duty vs. T  
A
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
25  
0
25  
50  
75  
100  
TA  
- Ambient Temperature - °C  
10  
Data Sheet G14309EJ2V0DS00  
µPC1909  
3. OPERATION OVERVIEW  
3.1 Startup  
The operating waveforms at startup are shown in Figure 3-1 below. The operations at startup are as follows.  
<1> When the power supply voltage (VCC) rises and exceeds the starting voltage (VCC(L to H)), the reference voltage  
(VREF) rises.  
<2> The DTC1 voltage is boosted as the soft start capacitor is charged (refer to 4.5.3 Soft start).  
<3> Because the DTC1 voltage is at a lower potential than other voltages, OUT1 and OUT2 become low and high  
level respectively during the T1 period.  
<4> If the DTC1 voltage is further boosted so that there is a period in which it is higher than the dCT voltage in the  
T2 period, OUT2 becomes low level. In the period in which the DTC1 voltage exceeds CT, OUT1 and OUT2 are  
high and low level respectively. The duty of OUT1 increases and that of OUT2 decreases as DTC1 is boosted.  
Figure 3-1. Waveforms at Startup  
VCC(LtoH)  
V
CC  
V
H
V
REF  
FB  
CT  
dC  
T
V
TH(H)  
V
TH(L)  
DTC  
2
DTC  
1
OUT  
OUT  
1
2
T
1
T
2
11  
Data Sheet G14309EJ2V0DS00  
µPC1909  
Signal Name  
OUT1  
Function  
Output for main switch  
Signal Name  
OUT2  
Function  
Output for subswitch  
DTC1  
Voltage for setting maximum duty limit of OUT1 DTC2  
Voltage for setting maximum duty limit of OUT2  
Triangle wave generated by oscillator  
FB  
Feedback voltage of converter output  
CT  
dCT  
Triangle wave that is CT level-shifted via the  
level shift circuit (OLS)  
Remarks 1. The oscillation frequency of CT is determined by the external capacitor connected to the CT pin and the  
external resistor connected to the RT pin (refer to 3.3 Overcurrent Limitation Operation). CT is a  
symmetrical triangle wave with a trough voltage (low-level threshold voltage VTH(L)) of 1.5 V and a crest  
voltage (high-level threshold voltage VTH(H)) of 3.5 V. Note that the dCT voltage cannot be viewed  
externally.  
2. In the T1 and T2 periods in Figure 3-1, the FB voltage level rises as the converter output voltage is boosted,  
with the result that the converter voltage cannot be controlled by FB.  
12  
Data Sheet G14309EJ2V0DS00  
µPC1909  
3.2 Steady Operation  
The operating waveforms during steady operation are shown in Figure 3-2 below. Steady operation as used here refers  
to the state in which the overcurrent and overvoltage latches are not working. The operations that occur during steady  
operation are as follows.  
<1> When the converter is operating at the rated input and output, the FB voltage is between DTC1 and DTC2 (in  
the T3 period in Figure 3-2).  
•The FB voltage and CT triangle wave are compared by PWM comparator 1. OUT1 is high level when the FB  
voltage is higher than the CT voltage.  
•The FB voltage and level-shifted dCT triangle wave are compared by PWM comparator 2. OUT2 is high level  
when the FB voltage is lower than the dCT voltage.  
<2> Because the input voltage becomes lower as the load of the converter is increased, there is a period when the  
FB voltage rises and the OUT1 duty increases (the T4 period in Figure 3-2).  
When the FB voltage is greater than the DTC1 voltage, OUT1 operates at the maximum duty determined by  
DTC1. At this time also, OUT2 operates at the minimum duty determined by DTC1.  
<3> Because the input voltage becomes higher as the load of the converter is decreased, there is a period when  
the FB voltage falls and the OUT1 duty decreases (the T5 period in Figure 3-2).  
When the FB voltage is less than the DTC2 voltage, OUT2 operates at the maximum duty determined by DTC2.  
Figure 3-2. Waveforms During Steady Operation  
CT  
dCT  
Vd  
DTC  
FB  
DTC  
1
2
OUT  
1
2
OUT  
T
3
T
4
T
5
13  
Data Sheet G14309EJ2V0DS00  
µPC1909  
For the dCT level shift amount and the OUT1 and OUT2 dead time settings, refer to 4.4 Dead Time Setting.  
The relationship between the FB, DTC1, and DTC2 voltages in each operating state and the pins that determine the duty  
of OUT1 and OUT2 are shown in Table 3-1 below. For the duty settings, refer to 4.5 Duty Settings.  
Table 3-1. Relationship Between Pins That Determine Duty During Steady Operation  
Operating Status  
Voltage Relationship  
DTC2 < FB < DTC1  
DTC2 < DTC1 < FB  
FB < DTC2 < DTC1  
Pin That Determines  
OUT1 Duty  
Pin That Determines  
OUT2 Duty  
Steady operation 1  
T3  
T4  
T5  
FB  
DTC1  
FB  
FB  
(rated status)  
Steady operation 2  
DTC1  
DTC2  
(heavy load, low input)  
Steady operation 3  
(light load, high input)  
14  
Data Sheet G14309EJ2V0DS00  
µPC1909  
3.3 Overcurrent Limitation Operation  
The internal configuration of the overcurrent latch circuit is shown in Figure 3-3 below.  
Figure 3-3. µPC1909 Overcurrent Latch Circuit  
Overcurrent detection comparator  
Flip-flop  
OC  
4
S
R
Q
To output circuit of OUT  
To PWM comparator 2  
1
V
TH(OC)  
CT  
16  
3 V  
If a voltage that exceeds the overcurrent detection voltage (VTH(OC) = 210 mV TYP.) is input to the OC pin, OUT1 is  
latched to low level, and then OUT2 is latched to high level. The time between the detection of overcurrent and when  
OUT1 becomes low level is the overcurrent detection delay time. Moreover, if the voltage of the CT pin exceeds 3.0 V, the  
reset signal will be input to the flip-flop, and the latch status of OUT1 and OUT2 will be reset. When the OC pin voltage  
reaches the overcurrent detection voltage, even in the cycle in which the latch status was reset, the latch and reset  
operations will be repeated. In other words, the pulse width is limited every cycle (pulse-by-pulse current limitation).  
The waveforms when overcurrent limitation is operating are shown in Figure 3-4 below.  
Figure 3-4. Waveforms When Overcurrent Limitation Is Operating  
Reset voltage (3 V)  
dCT  
CT  
DTC  
1
FB  
DTC  
2
V
TH(OC)  
OC  
t
d(OC)  
OUT  
OUT  
1
2
T
6
15  
Data Sheet G14309EJ2V0DS00  
µPC1909  
3.4 On/Off Operation  
The output of OUT1 and OUT2 can be made low level (off) by making the voltage of the ON/OFF pin low level. This  
also causes discharge of the soft start capacitor externally connected to the DTC1 pin and the timing capacitor externally  
connected to the CT pin.  
To prevent chattering when turning on and off slowly, the threshold voltage of the ON/OFF pin has a 0.2-V hysteresis.  
The waveforms during the on/off operation are shown in Figure 3-5 below.  
Figure 3-5. Waveforms During On/Off Operation  
Discharge of C  
T
, DTC  
1
CT  
dCT  
DTC  
1
FB  
DTC  
2
DTC  
1
V
IN(ON)  
ON/OFF  
V
IN(OFF)  
OUT  
OUT  
1
2
T
7
T
8
16  
Data Sheet G14309EJ2V0DS00  
µPC1909  
3.5 Overvoltage Protection Operation  
The overvoltage latch circuit is a protection circuit that stops the power supply to prevent damage to the load after  
detection of overvoltage caused by abnormal boosting of the output of the converter.  
The internal configuration of the overvoltage latch circuit is shown in Figure 3-6 below.  
Figure 3-6. µPC1909 Overvoltage Latch Circuit  
Overvoltage detection comparator  
Flip-flop  
OV  
1
S
R
Q
To output circuit of OUT  
1, OUT  
2
V
TH(OV)  
VREF 14  
The threshold voltage (VTH(OV)) connected to the overvoltage detection comparator is 2.0 to 2.8 V (2.4 V TYP.). If the  
voltage of the OV pin exceeds VTH(OV), OUT1 and OUT2 are latched to low level. The waveforms when OV (overvoltage)  
occurs are shown in Figure 3-7 below.  
To reset the status of the overvoltage latch, drop the voltage of the VCC pin to below the OVL release voltage (VR(OV) =  
2 V TYP.), and drop the voltage of the VREF pin to a sufficiently low level.  
Figure 3-7. Waveforms When Overvoltage Latch Is Operating  
dCT  
CT  
DTC  
1
FB  
DTC  
2
VTH(OV)  
OV  
t
d(OV)  
OUT  
1
2
OUT  
T9  
17  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4. SETTINGS  
4.1 Controller Settings  
The feedback circuit for when the converter output voltage is detected on the secondary side is configured as shown in  
Figure 4-1 below. The feedback gain is primarily determined by the R1 resistor.  
Figure 4-1. Feedback Circuit Configuration  
V
REF  
14  
12  
R1  
PWM comparator 1  
To output circuit of OUT  
FB  
1
I
K
Photo-  
coupler  
From comparator output  
To output circuit of OUT  
PWM comparator 2  
2
GND  
3
Shunt regulator  
The voltage of the FB pin is input to PWM comparators 1 and 2.  
During steady operation (DTC2 < FB < DTC1), the duty of OUT1 and OUT2 is determined by the slice level of the  
triangle wave based on the FB pin voltage.  
Caution When using a shunt regulator such as the µPC1093 for the secondary-side detector, Ik must be  
set bearing in mind the variation of the CTR in the photocoupler. Also, be sure to use the  
photocoupler grounded at the emitter ground.  
4.2 Startup Circuit, Low Voltage Malfunction Prevention Circuit Settings  
The startup circuit is configured as shown in Figure 4-2 below.  
Figure 4-2. Startup Circuit  
VCC IN  
R2  
D1  
9
V
CC  
N
P
NZ  
14 VREF  
13 DTC  
Primary coil  
C1  
C
2
R
3
4
1
C3  
R
3
GND  
18  
Data Sheet G14309EJ2V0DS00  
µPC1909  
In the µPC1909, when the power supply voltage (VCC) rises but is less than the operation start voltage (VCC(L to H)),  
a current of about 100 µA flows as a standby current.  
When VCC reaches or exceeds VCC(L to H), the internal reference voltage (VREF) rises and operating current is supplied to  
the internal circuits, increasing the circuit current (ICC) to a level of about 12 mA.  
In the startup circuit in Figure 4-2, ICC(SB) is supplied via a startup resistor (R2), and when the power MOS FET is turned  
on after the µPC1909 is started up, ICC is supplied from a capacitor (C1) until voltage reaches the auxiliary coil. R2 is  
determined using ICC(SB) as follows.  
VIN(MIN.) VCC(LtoH)(MAX.)  
R2  
ICC(SB)(MAX.) + IREF  
If R2 is too small, the loss via R2 during steady operation will be large. The loss via R2 during steady operation (PL(MAX.))  
is shown below. In this equation, NZ is the number of turns in the power supply auxiliary coil, NP is the number of turns in  
the primary coil, and VF(D1) is the forward direction voltage drop in the diode (D1).  
2
{(1 N  
Z
/N )·VIN(MAX.) + VF(D1)}  
P
P
L(MAX.)  
=
R2  
Note that a film or other capacitor (C2) with good high-frequency characteristics should be connected to prevent a high-  
frequency current flowing through the VCC line when the power MOS FET is driven.  
To apply a soft start, connect a soft start capacitor (C3) between the DTC1 pin and GND. Using the overcurrent limitation  
function of the OC pin allows the duty to be limited on a pulse-by-pulse basis, enabling a more secure soft start.  
The time between the startup of the µPC1909 and the first output of OUT1 (t1) is expressed as follows.  
C3 · R3  
1 + R3 / R4  
t1 = −  
ln {1 (1 + R3 / R4)·(VTH(L) / VREF)}  
Although VCC drops in the t1 period, C1 is determined so that OUT1 is output while the drop voltage has not fallen to the  
operating voltage hysteresis width VH. At this time, because OUT2 is output before OUT1 (refer to 3.1 Startup), C1 must  
be set to compensate for the increase in current caused by the output of OUT2. Refer to Figure 3-1. Waveforms at Startup  
for the operating waveforms.  
I
CC + IREF + IOUT I  
C1  
>
CC(R) · t  
1
V
H
Here, IREF is the current that flows through the resistor with the maximum duty setting connected to the VREF pin, IOUT is  
the power MOS FET drive current, and ICC(R) is the current that is supplied from the startup resistor (R2).  
19  
Data Sheet G14309EJ2V0DS00  
µPC1909  
Note that when the rising of VREF is later than the rising of VCC at startup, OUT1 and OUT2 become high level  
simultaneously when VREF is in a range of about 0.45 to 0.5 V, which may result in the external power MOS FET being  
inadvertently turned on. To prevent this, speed up the rising of VREF by pulling it up to VCC with a resistor. Note, however,  
that the standby current (ICC(SB)) will increase by only the current that flows through the connected resistor.  
The pull-up resistance value (R) can be calculated from the following equation.  
V
CC(MAX.) [V] 0.5  
R [k] =  
0.1 [mA]  
Remark VCC(MAX.): The highest power supply voltage that can be applied at startup without causing malfunction.  
For the same reason, if VCC drops below the operation stopped voltage (VCC(L to H) – VH), VREF and the constant current  
circuit will be cut-off, which weakens the drive capacity of the OUT1 and OUT2 outputs when the power supply is cut-off.  
If this drive capacity is weakened, the charge that has accumulated at the power MOS FET gates may not be sufficiently  
discharged, blunting the falling section of the power MOS FET gate drive waveform. In this case, connecting a capacitor  
of at least 0.47 µF between the VREF pin and GND allows sufficient time and output block drive capacity to discharge the  
charge accumulated at the gates of the power MOS FET.  
Because the operation start and stop voltages in the µPC1909 are 9 V TYP. and 5 V TYP. respectively, VREF is output  
while operation is stopped until VCC is 5 V or lower. However, when VCC reaches about 6.5 V, VREF falls together with  
VCC, as can be seen in Figure 4-3. When VREF falls, the constant current value of the triangle wave oscillator decreases,  
causing the oscillation frequency to drop.  
Figure 4-3. VREF vs. VCC Characteristics  
6
TA = 25°C  
5
4
3
2
1
I
REF = 0 A  
I
REF = 10 mA  
V
CC(L to H)  
V
H
0
1
2
3
4
5
6
7
8
9
10  
V
CC - Supply Voltage - V  
In standard applications, VREF is resistance-divided to create the DTC1, DTC2, and FB voltages. In addition, because  
the levels of the triangle wave (CT) and internally level-shifted triangle wave (dCT) are also generated internally by  
dividing the resistance of VREF, if VREF drops, each of the above will drop in proportion to VREF. As a result, even if the  
oscillation frequency drops, standard applications are not affected. Further study will be required, however, including for  
transient states.  
20  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.3 Oscillator Settings  
The oscillator circuit is shown in Figure 4-4 below.  
Figure 4-4. µPC1909 Oscillator Circuit  
V
REF  
14  
Comparator H  
Flip-flop  
Tr  
1
S
R
Q
I
CT  
R
T
T
15  
16  
V
TH(H)  
C
Tr  
3
Tr  
2
2·ICT  
Comparator L  
TH(L)  
RT  
CT  
V
GND  
3
A timing resistor (RT) is connected between the RT pin and GND, and a timing capacitor (CT) is connected between the  
CT pin and GND. The charge/discharge current of CT is determined by RT. The oscillator operates as follows.  
<1> If ICT is taken as the current that flows through Tr1, the current the flows through Tr3 is set as 2 x ICT. Because  
the flip-flop (Q) outputs a high level at startup, Tr2 is off, and CT is charged with ICT.  
<2> When the CT voltage reaches VTH(H) = 3.5 V TYP., the output of comparator H is inverted, and Tr2 is turned on.  
Due to the discharging of the current set by 2 x ICT, the current flowing through CT is (ICT – 2 x ICT) = – ICT, so  
CT is discharged by ICT.  
<3> If the CT voltage drops to VTH(L) = 1.5 V TYP., the output of comparator L is inverted, the flip-flop is reset, and  
CT is recharged because Tr2 is off.  
<4> <2> and <3> are repeated, generating a triangle wave with an amplitude of 1.5 to 3.5 V.  
The oscillation frequency can be approximated from the following equation.  
1 × 106  
f
OSC  
[kHz]  
0.8251 × C  
T
[pF] × (R [k] + 0.8) + 320  
T
21  
Data Sheet G14309EJ2V0DS00  
µPC1909  
The results of measuring fOSC vs. RT are shown in Figure 4-5 below, with CT as the parameter.  
Figure 4-5. Relationship Between Oscillation Frequency (fOSC), Timing Capacitor (CT) and Timing Resistor (RT)  
1000  
500  
CT = 220 pF  
100  
50  
CT  
= 1000 pF  
CT = 470 pF  
10  
50  
- Timing Resistance - kΩ  
100  
RT  
4.4 Dead Time Setting  
The period in which OUT1 and OUT2 are simultaneously off is called dead time. This is an important parameter to  
realize a zero-cross switch when active-clamping. To set the dead time, it is necessary to adjust both the oscillation  
frequency and level shift parameters (for details of the oscillation frequency setting, refer to 4.3 Oscillator Settings).  
4.4.1 Level shift setting  
Whichever is higher of the DTC2 pin and FB pin voltages is compared with the triangle wave that is the internally level-  
shifted wave of the CT pin (dCT). OUT2 is high level while dCT is higher than the DTC2 and FB voltages.  
The triangle wave dCT, which controls OUT2, is generated by internally level-shifting the CT wave on the low potential  
side. The amount of shift (Vd) is determined using the resistor (RCT2) connected between the CT2 and VREF pins.  
Vd can be calculated from the following equation.  
2 × 4.2  
RCT2 [k] + 10  
Vd  
[V]  
A general diagram of the level shift circuit (OLS) is shown in Figure 4-6, and the relationship between the oscillation  
frequency (fOSC), the dead time (tqd), and resistor RCT2 is shown in Figure 4-7.  
22  
Data Sheet G14309EJ2V0DS00  
µPC1909  
Figure 4-6. µPC1909 Level Shift Circuit (OLS)  
V
REF  
14  
16  
PWM comparator 1  
To output circuit of OUT  
1
CT  
RCT2  
PWM comparator 2  
To output circuit of OUT  
C
T2  
2
3
2
GND  
Figure 4-7. Relationship Between fOSC, tqd and RCT2  
100  
10  
1
V
CC = 10 V  
FB = 2.5 V  
R
CT2 = 5 kΩ  
CT2 = 10 kΩ  
CT2 = 20 kΩ  
R
R
µ
R
CT2 = 50 kΩ  
OUT  
1
2
50%  
t
qd  
0.1  
RCT2 = 100 kΩ  
OUT  
50%  
RCT2 = 200 kΩ  
R
CT2 = 300 kΩ  
0.01  
10  
100  
1000  
f
osc - Oscillation Frequency - kHz  
23  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.4.2 Dead time adjustment  
The dead time between the fall of OUT1 and the rise of OUT2 (tqc) and the dead time between the fall of OUT2 and the  
rise of OUT1 (tqd) is determined by the oscillation frequency and the amount of level shift of the triangle wave.  
Although usually tqc = tqd, if these values differ, connect a suitable resistor between the CT pin and the VREF pin, as well  
as between the CT pin and GND, and adjust the dead time by making the oscillation waveform asymmetrical, as shown  
in Figure 4-8.  
Figure 4-8. Dead Time Adjustment  
(a) tqc < tqd  
dC  
(b) tqc > tqd  
CT  
T
dCT  
CT  
14 VREF  
14 VREF  
FB  
FB  
R1  
16 C  
T
16 C  
T
CT  
R2  
CT  
OUT  
1
2
OUT  
OUT  
1
2
3
GND  
3 GND  
RT  
RT  
OUT  
15 R  
T
15 R  
T
t
qc  
t
qd  
t
qc  
t
qd  
The charge current (ICT) of the timing capacitor (CT) is expressed as follows.  
4.2  
800 + R  
I
CT [A] =  
T
[]  
If RT is taken as 20 k, ICT will be approximately 200 µA.  
To reduce tqc, connect a resistor (R1) between the VREF and CT pins. If the value of the resistor is set so that the current  
charged in CT is about 10% more than ICT, tqc can be reduced and tqd increased by about 10% compared to when R1 is  
not connected.  
R1 here can be calculated from the following equation.  
VREF [V] VOSC [V]  
R1 [] =  
ICT [A]  
Remark VOSC : Central voltage value of triangle wave  
ICT : Value of ICT current increased (decreased) by R1 (R2)  
Note also that connecting a resistor (R2) between CT and GND makes it possible to reduce the current charged to CT.  
If a resistor is selected that allows about 10% current to flow, tqc can be increased and tqd reduced by about 10%  
compared to when R2 is not connected.  
R2 here can be calculated from the following equation.  
V
OSC [V]  
R2 [] =  
I
CT [A]  
24  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.5 Duty Settings  
4.5.1 Maximum duty setting  
In the steady operation state (DTC2 < FB < DTC1), the duty during operation at the FB voltage is determined by OUT1  
and OUT2. To set the duty as an independent FB input at times such as at startup, during low voltage input, and when the  
current is limited, the OUT1 and OUT2 outputs must be set to their maximum duty values. Set the maximum duty for OUT1  
and OUT2 via the DTC1 and DTC2 pins, respectively, as shown in Figure 4-9.  
Figure 4-9. Maximum Duty Settings in µPC1909  
14 VREF  
13 DTC  
1
5
3
DTC  
2
GND  
Note that when pulse-by-pulse current limitation is being applied using the OC pin, the maximum duty of OUT1 should be  
set to between 60 and 65%. This is because the duty conversion of OUT1 sets the reset level of the internal OC circuit to  
about 75%. For details, refer to 4.7 Overcurrent Limiter Settings.  
There is no limit to the maximum duty of OUT2.  
4.5.2 Minimum duty limit  
When OUT1 is operating at maximum duty, if OUT2 is not output, it may inadvertently be set to a duty of 0%, depending  
on the value of “OUT1 ON time + tqc + tqd”. If OUT2 has 0% duty when active clamping, the transformer will not be able to  
be reset, and a minimum duty limit will have to be set for OUT2 at the same time the maximum duty of OUT1 is  
determined. Because the DTC1 pin is also the input of PWM comparator 2 on the OUT2 side, if the FB voltage is higher  
than the DTC1 voltage, the DTC1 voltage is compared with dCT and the minimum duty of OUT2 is limited.  
4.5.3 Soft start  
This IC incorporates a transistor for discharging the soft start capacitor connected between the DCT1 pin and GND. If  
VCC falls below the operation stopped voltage (5 V TYP.) or if the ON/OFF pin becomes low level (off), the DTC1 pin  
becomes low level and the soft start capacitor is initialized.  
There is no such transistor incorporated on the DTC2 side.  
25  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.6 Remote Control  
In the µPC1909, starting up and stopping a converter can be controlled by turning on and off the output circuit using an  
external signal. When the ON/OFF pin is made low level, the low voltage malfunction protection circuit operates and  
cuts off OUT1 and OUT2, causing the timing capacitor connected between the CT pin and GND (CT) and the soft start  
capacitor connected between the DTC1 pin and GND to discharge. Because the on/off threshold voltage has 0.2-V  
hysteresis, the occurrence of chattering can be suppressed, even in slow on/off operations.  
The ON/OFF pin is internally pulled up to VREF via a 100 kresistor. When the on/off function is not used, however, be  
sure to connect the ON/OFF pin directly to the VREF pin in order to prevent the occurrence of noise.  
A configuration whereby on/off control is controlled from the primary side by a photocoupler is shown in Figure 4-10  
below. Be sure to set the pull-down resistor connected to the ON/OFF pin so that the leakage current between C and E  
when the photocoupler is off does not cause the ON/OFF pin voltage to be boosted to a level whereby the µPC1909 is  
turned on.  
Figure 4-10. ON/OFF Pin Connection  
V
REF  
14  
7
100 kΩ  
ON/OFF  
GND  
Photo-  
coupler  
2.6 V/2.4 V  
3
26  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.7 Overcurrent Limiter Settings  
The OC pin in the µPC1909 allows the realization of a pulse-by-pulse overcurrent limiter, whose configuration is shown  
in Figure 4-11 below.  
Figure 4-11. µPC1909 Overcurrent Limiter  
PWM comparator 1  
Main switch  
Output circuit of OUT  
1
1 11  
OUT  
Overcurrent detection comparator  
OC  
4
S
Q
I
B(OC)  
R
V
TH(OC)  
C
T 16  
Flip-flop  
Threshold voltage (3 V TYP.)  
GND  
3
If overcurrent is detected by the overcurrent detection comparator, OUT1 is latched to low level by the flip-flop.  
Moreover, if the triangle wave generated by the oscillator and a voltage with a threshold value that causes the output  
latch to be reset are input to the other comparator the flip-flop will be reset at each cycle.  
Because the reset threshold voltage is internally set to 3 V TYP. (about 75% VREF), if a maximum duty of 75% or over is  
set by the DTC1 pin thus activating overcurrent limitation by the OC pin, two pulses will be inadvertently output in one  
cycle. To allow for differences in ICs, do not set the maximum duty of DTC1 (60% or over) to more than 65% when  
applying overcurrent limitation using the OC pin. Alternatively, do not use OC pin overcurrent limitation if setting the  
maximum duty (60% or over) to more than 65%. In this case (overcurrent limitation current not used), connect the OC pin  
directly to GND.  
Discharge current flows through the OC pin. This discharge current is expressed as the input bias current of the  
overcurrent latch block (IB(OC)). Although a filter is attached to the OC pin to prevent the overcurrent latch circuit from  
malfunctioning due to the surge current that flows when the power MOS FET is turned on, be sure to set the resistor to  
no more than 100 to stop IB(OC) causing a shift in the overcurrent detection point.  
When overcurrent is being limited by the OC pin, OUT1 operates at the minimum pulse width limitable by the  
overcurrent latch circuit. The minimum pulse width is the sum of the µPC1909’s overcurrent detection delay time (td(OC)),  
the delay of the filter attached to the OC pin, and the turn-on time of the power MOS FET.  
During steady operation (DTC2 < FB < DTC1), OUT2 operates at the duty determined by the FB voltage. Because the  
FB voltage rises when the output of the converter drops, the duty of the OUT2 output drops in line with the converter  
output, until it reaches the minimum duty set by the DTC1 voltage.  
27  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.8 Overvoltage Protection Circuit Setting  
The overvoltage protection circuit based on the overvoltage latch in the µPC1909 is configured as shown in Figure 4-  
12 below. The threshold voltage connected to the overvoltage detection comparator (VTH(OV)) is 2.0 to 2.8 V (2.4 V  
TYP.). If the input at the OV pin exceeds VTH(OV), the flip-flop in the IC latches OUT1 and OUT2 to low level. Once the  
overvoltage latch circuit is latched, it is not released until the power supply voltage of the IC (VCC) falls below the OVL  
release voltage (2 V TYP.) (because ICC is higher than ICC(SB) when the circuit is latched, the operation status will not be  
restored in the steady input state).  
Figure 4-12. µPC1909 Overvoltage Protection Circuit  
V
CC  
Reference  
voltage  
9
Photo-  
coupler  
V
REF 14  
From converter output  
Overvoltage detection comparator  
Flip-flop  
OV  
1
To output circuit  
of OUT , OUT  
S
R
Q
I
B(OV)  
1
2
V
TH(OV)  
GND  
3
Zener diode  
Discharge current flows through the OV pin. This is the input bias current of the overvoltage latch block in the electrical  
specifications (IB(OV) = 4 µA MAX.). To prevent the detection level fluctuating due to IB(OV), and to allow for the effect of  
the leakage current between C and E in the photocoupler, be sure to set the overvoltage detection resistor connected to  
the OV pin to no more than 100 k.  
Because the OVL (overvoltage latch) detection delay time is about 750 ns, a capacitor with good frequency  
characteristics should be connected between the OV pin and GND to prevent malfunction due to noise. However, if the  
overvoltage latch circuit does malfunction due to electrostatic discharge or other such external noise, an effective  
countermeasure is to connect a capacitor with good frequency characteristics such as a film capacitor between VCC and  
GND.  
Caution If the power is reapplied immediately after being stopped (VREF drop) while there is charge remaining  
in the filter’s capacitor (such as when VCC (auxiliary coil voltage) is being monitored from VREF without  
configuring an overvoltage protection circuit such as is shown in Figure 4-12), the overvoltage latch  
threshold value will be boosted in proportion with the boosting of VREF, possibly causing the over-  
voltage latch to latch too easily.  
28  
Data Sheet G14309EJ2V0DS00  
µPC1909  
4.9 Output Circuit  
The output circuit is a totem-pole output with a peak output current rating (IC(peak)) of 1.2 A. Although a power MOS FET  
can be driven directly, be careful not to exceed the allowable loss of the µPC1909 when the input capacitance of the  
power MOS FET is large or the operating frequency is high. The switching speed of the power MOS FET is determined by  
the charge/discharge current of the gates and the charge of the power MOS FET’s gates. Be sure, however, to insert a  
series resistor at the gates of the power MOS FET to avoid exceeding the peak output current rating of the µPC1909.  
Note that the heat generated in the µPC1909 by the output current is determined by the charge at the gates of the power  
MOS FET, and is not related to the switching speed.  
Figure 4-13. 2SK1954 Gate Change Characteristics  
When the 2SK1954 is used, for example, the loss of the  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
µPC1909 (Pd) can be determined as follows,  
when the gate drive voltage VGS VOUT1 = 10 V and  
the oscillation frequency fOSC = 200 kHz,  
V
GS  
V
DD = 140 V  
90 V  
36 V  
as shown in the gate charge graph on the right (Figure 4-13):  
Pd = QG · VGS · fOSC  
=10 [nC] x 10 [V] x 200 [kHz]  
=0.02 [W]  
60  
6
40  
4
V
DS  
Moreover, when the µPC1909 and the power MOS FET are  
separated, the wiring from the OUT1 and OUT2 output pins is  
lengthened, which combined with the parasitic inductance and  
floating capacitance elements of the power MOS FET causes  
20  
2
0
I
D
= 4 A  
14  
0
2
4
6
8
10  
12  
16  
Q
G
- Gate Charge - nC  
the voltage of the OUT1 and OUT2 pins to fall below that of the GND pin (undershoot). In this case, clamp the undershoot  
by connecting a Schottky barrier diode as shown in Figure 4-14 to prevent the possibility of malfunction in the µPC1909.  
Figure 4-14. Power MOS FET Drive Circuit Block  
Schottky barrier diode  
µPC1909  
OUT  
1
(Pin No.11),  
OUT  
2
(Pin No.6)  
GND  
3
Shunt resistor  
EMI  
EMI  
1
(Pin No.10),  
(Pin No.8)  
2
Note that when active clamping, if the C-cut drive transistor is driven by OUT2, the voltage of the OUT2 pin may become  
higher than VCC. It is therefore vital to observe VOUT2 VCC + 5 V by taking action such as connecting a diode between  
OUT2 and VCC.  
29  
Data Sheet G14309EJ2V0DS00  
µPC1909  
5. PACKAGE DRAWINGS  
16-PIN PLASTIC DIP (7.62mm(300))  
16  
9
1
8
A
J
K
L
P
I
F
C
B
H
R
M
M
N
D
G
NOTES  
ITEM MILLIMETERS  
1. Each lead centerline is located within 0.25 mm of  
its true position (T.P.) at maximum material condition.  
A
B
C
D
F
G
H
I
20.32 MAX.  
1.27 MAX.  
2.54 (T.P.)  
0.50±0.10  
1.1 MIN.  
2. Item "K" to center of leads when formed parallel.  
3.5±0.3  
0.51 MIN.  
4.31 MAX.  
5.08 MAX.  
7.62 (T.P.)  
6.5  
J
K
L
+0.10  
0.25  
M
0.05  
N
P
R
0.25  
1.1 MIN.  
0
15°  
P16C-100-300B-2  
30  
Data Sheet G14309EJ2V0DS00  
µPC1909  
16-PIN PLASTIC SOP (7.62 mm (300))  
16  
9
detail of lead end  
P
1
8
A
H
I
F
G
J
S
B
L
N
S
K
C
D
M
M
E
NOTE  
ITEM MILLIMETERS  
Each lead centerline is located within 0.12 mm of  
its true position (T.P.) at maximum material condition.  
A
B
C
10.2±0.2  
0.78 MAX.  
1.27 (T.P.)  
+0.08  
0.42  
D
0.07  
E
F
G
H
I
0.1±0.1  
1.65±0.15  
1.55  
7.7±0.3  
5.6±0.2  
1.1±0.2  
J
+0.08  
0.22  
K
0.07  
L
M
N
0.6±0.2  
0.12  
0.10  
+7°  
3°  
P
3°  
P16GM-50-300B-6  
31  
Data Sheet G14309EJ2V0DS00  
µPC1909  
6. RECOMMENDED SOLDERING CONDITIONS  
When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering  
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our  
sales offices.  
For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL"(C10535E).  
Type of Through-hole Device  
µPC1909CX: 16-pin plastic DIP (7.62 mm (300))  
Soldering Method  
Wave soldering (pins only)  
Partial heating  
Soldering Conditions  
Solder bath temperature : 260°C MAX., Time : 10 seconds MAX.  
Pin temperature : 300°C MAX., Time : 3 seconds MAX. (per pin)  
Caution For through-hole device, the wave soldering process must be applied only to leads, and make  
sure that the package body does not get jet soldered.  
Type of Surface Mount Device  
µPC1909GS: 16-pin plastic SOP (7.62 mm (300))  
Recommended  
Soldering Method  
Soldering Conditions  
Condition symbol  
Infrared reflow  
Package peak temperature : 235°C, Time : 30 seconds MAX.  
(at 210°C or higher), Count : Twice or less  
IR35-00-2  
VPS  
Package peak temperature : 215°C, Time : 40 seconds MAX.  
(at 200°C or higher), Count : Twice or less  
VP15-00-2  
WS60-00-1  
Wave soldering  
Soldering bath temperature : 260°C or less, Time : 10 seconds  
MAX., Count : Once, Preheating temperature : 120°C MAX.  
(package surface temperature)  
Caution Do not use different soldering methods together.  
32  
Data Sheet G14309EJ2V0DS00  
µPC1909  
[MEMO]  
33  
Data Sheet G14309EJ2V0DS00  
µPC1909  
[MEMO]  
34  
Data Sheet G14309EJ2V0DS00  
µPC1909  
[MEMO]  
35  
Data Sheet G14309EJ2V0DS00  
µPC1909  
The information in this document is current as of November, 2000. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  

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