UPA837TF [NEC]

NPN SILICON EPITAXIAL TWIN TRANSISTOR; NPN硅外延晶体管晶体管


型号：	UPA837TF
厂家：	NEC
描述：	NPN SILICON EPITAXIAL TWIN TRANSISTOR NPN硅外延晶体管晶体管晶体晶体管
文件：	总2页 (文件大小：21K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PRELIMINARY DATA SHEET

NPN SILICON EPITAXIAL

TWIN TRANSISTOR

UPA837TF

FEATURES

OUTLINE DIMENSIONS (Units in mm)

Package Outline TS06

•

SMALL PACKAGE OUTLINE:

SOT-363 package measures just 2.0 mm x 1.25 mm

2.1 ± 0.1

1.25 ± 0.1

LOW HEIGHT PROFILE:

Just 0.60 mm high

TWO DIFFERENT DIE TYPES:

Q1 - Ideal oscillator transistor

Q2 - Ideal buffer amplifier transistor

0.65

+0.10

- 0.05

2.0 ± 0.2

0.22

(All Leads)

1.3

DESCRIPTION

TheUPA837TFcontainsoneNE686andoneNE688NPNhigh

frequency silicon bipolar chip. NEC's new low profile TF

package is ideal for all portable wireless applications where

reducing component height is a prime consideration. Each

transistorchipisindependentlymountedandeasilyconfigured

for oscillator/buffer amplifier and other applications.

0.6 ± 0.1

0.45

0.13 ± 0.05

0 ~ 0.1

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

Note: Pin 1 is the

lower left most pin as

the package lettering

is oriented and read

left to right.

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

3. Collector (Q2)

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA837TF

TS06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5 V, IE = 0

µA

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain¹at VCE = 2 V, IC = 7 mA

140

Gain Bandwidth (1) at VCE = 2 V, IC = 7 mA, f = 2 GHz

Gain Bandwidth (2) at VCE = 1 V, IC = 5 mA, f = 2 GHz

Feedback Capacitance²at VCB = 2 V, IE = 0, f = 1 MHz

Insertion Power Gain (1) at VCE = 2 V, IC =7 mA, f = 2 GHz

Insertion Power Gain (2) at VCE = 1 V, IC =5 mA, f = 2 GHz

Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz

GHz

0.4

8.5

Cre

0.6

|S21E|²

7.5

8.5

1.5

Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz

1.5

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5 V, IE = 0

µA

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

DC Current Gain¹at VCE = 1 V, IC = 3 mA

100

4.0

145

Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz

Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance²at VCB = 1 V, IE = 0, f = 1 MHz

Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz

GHz

4.5

9.0

Cre

0.75

3.5

0.85

2.5

|S21E|²

2.5

Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz

Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz

Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz

6.5

1.7

1.5

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with

emitter connected to guard pin of capacitances meter.

California Eastern Laboratories

UPA837TF

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

ORDERING INFORMATION

SYMBOLS

PARAMETERS

UNITS

RATINGS

PART NUMBER

QUANTITY

PACKAGING

UPA837TF-T1

3000

Tape & Reel

VCBO

VCEO

VEBO

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

110

100

110

Total Power Dissipation

200

150

Junction Temperature

Storage Temperature

°C

150

TSTG

-65 to +150

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

2/99

DATA SUBJECT TO CHANGE WITHOUT NOTICE