UPA839TF [NEC]
NPN SILICON EPITAXIAL TWIN TRANSISTOR; NPN硅外延晶体管晶体管型号: | UPA839TF |
厂家: | NEC |
描述: | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
文件: | 总2页 (文件大小:20K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL
TWIN TRANSISTOR
UPA839TF
FEATURES
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06
•
•
•
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
2.1 ± 0.1
1.25 ± 0.1
LOW HEIGHT PROFILE:
Just 0.60 mm high
Q1
TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
1
6
5
0.65
+0.10
- 0.05
2.0 ± 0.2
0.22
(All Leads)
2
Q2
3
1.3
DESCRIPTION
4
TheUPA839TFcontainsoneNE680andoneNE856NPNhigh
frequency silicon bipolar chip. NEC's new low profile TF
package is ideal for all portable wireless applications where
reducing component height is a prime consideration. Each
transistorchipisindependentlymountedandeasilyconfigured
for oscillator/buffer amplifier and other applications.
0.6 ± 0.1
0.45
0.13 ± 0.05
0 ~ 0.1
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
3. Collector (Q2)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA839TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
µA
MIN
TYP
MAX
1.0
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
1.0
DC Current Gain1 at VCE = 3 V, IC = 5 mA
80
120
8.0
0.3
7.5
1.9
200
fT
Gain Bandwidth at VCE = 3 V, IC = 5 mA
GHz
pF
5.5
Cre
|S21E|2
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =5 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz
0.7
dB
5.5
NF
dB
3.2
ICBO
IEBO
hFE
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
µA
1.0
1.0
DC Current Gain1 at VCE = 3 V, IC = 7 mA
100
3.0
145
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
pF
4.5
0.7
9
Cre
|S21E|2
1.5
2.5
dB
7
NF
dB
1.2
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA839TF
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
ORDERING INFORMATION
SYMBOLS
PARAMETERS
UNITS
RATINGS
PART NUMBER
QUANTITY
PACKAGING
UPA839TF-T1
3000
Tape & Reel
Q1
20
Q2
20
VCBO
VCEO
VEBO
IC
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
V
10
12
V
1.5
35
3
mA
mW
100
110
PT
Total Power Dissipation
110
200
150
TJ
Junction Temperature
Storage Temperature
°C
°C
150
TSTG
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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