UPA1454H [NEC]
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE; NPN硅功率晶体管阵列低速切换使用工业用途
| 型号： | UPA1454H |
| 厂家： | 
NEC |
| 描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1454
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSION
(in m illim eters)
The µPA1454 is NPN silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lam p and so on.
26.8 MAX.
4.0
FEATURES
•
•
Easy m ount by 0.1 inch of term inal interval.
High hFE. Low VCE(sat).
hFE = 800 to 3200 (at IC = 1 A)
VCE(sat) = 1.0 V MAX. (at IC = 3 A)
1.4
0.5 ±0.1
2.54
1.4 0.6 ±0.1
ORDERING INFORMATION
Part Num ber
Package
Quality Grade
Standard
1 2 3 4 5 6 7 8 9 10
µPA1454H
10 Pin SIP
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Sem iconductor Devices"
(Docum ent num ber IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recom m ended applications.
3
5
7
9
2
4
6
8
1
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
Collector to Em itter Voltage
Em itter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
VCBO
VCEO
VEBO
100
100
7
V
V
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
V
IC(DC)
IC(pulse)*
IB(DC)
PT1**
PT2***
Tj
5
A/unit
A/unit
A/unit
W
10
1.0
3.5
28
Total Power Dissipation
Total Power Dissipation
J unction Tem perature
Storage Tem perature
W
150
˚C
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
The inform ation in this docum ent is subject to change w ithout notice.
Document No. IC-3520
Date Published September 1994
Printed in Japan
P
1994
©
µPA1454
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Em itter Leakage Current
DC Current Gain
SYMBOL
ICBO
MIN.
TYP.
MAX.
10
UNIT
µA
µA
—
TEST CONDITIONS
VCB = 100 V, IE = 0
IEBO
10
VEB = 7 V, IC = 0
*
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
800
500
1300
1000
3200
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 30 m A
IC = 3 A, IB = 30 m A
*
*
*
DC Current Gain
—
Collector Saturation Voltage
Base Saturation Voltage
Turn On Tim e
1.0
1.2
V
V
1
3
µs
IC = 3 A
IB1 = –IB2 = 30 m A
Storage Tim e
tstg
µs
.
.
VCC = 50 V, RL = 16.7 Ω
.
.
Fall Tim e
tf
1.5
µs
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
.
R = 16.7 Ω
L
.
I
C
I
B1
VIN
Base Current
Wave Form
1
1
B1
B2
IB2
T.U.T.
.
V
CC = 50 V
.
90 %
10 %
Collector
Current
Wave Form
IC
PW
.
PW = 50 µs
.
.
V
BB = –5 V
.
Duty Cycle ≤ 2 %
t
on
t
stg
t
f
2
µPA1454
TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
SAFE OPERATING AREA
100
50
100
80
IC(pulse) MAX.
IC(DC) MAX.
10
5
µ
µ
60
1
40
0.5
20
TC = 25 ˚C
Single Pulse
0.1
0
50
100
150
1
5
10
50
100
TC - Case Temperature - ˚C
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
20
10
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
NEC
µPA1454
4
3
2
1
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ta - Ambient Temperature - ˚C
TC - Case Temperature - ˚C
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
DC CURRENT GAIN vs. COLLECTOR CURRENT
10
VCE = 5 V
Pulsed
10000
1000
100
1
0.1
0.02
10
0.001
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current -A
IC - Collector Current - A
3
µPA1454
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
TRANSIENT THERMAL RESISTANCE
6
5
4
3
2
1
100
10
1
VCE ≤ 10 V
1
IB = 0.5 mA
0.1
1
10
100
0
1
2
3
4
5
PW - Pulse Width - ms
VCE - Collector to Emitter Voltage - V
4
µPA1454
REFERENCE
Docum ent Nam e
Docum ent No.
NEC sem iconductor device reliability/quality control system .
Quality grade on NEC sem iconductor devices.
Sem iconductor device m ounting technology m anual.
Sem iconductor device package m anual.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
Guide to quality assurance for sem iconductor devices.
Sem iconductor selection guide.
5
µPA1454
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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