UPA1458H [NEC]
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE; NPN硅功率晶体管阵列低速切换使用达林顿晶体管工业用
| 型号： | UPA1458H |
| 厂家： | 
NEC |
| 描述： | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSION
(in m illim eters)
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lam p and
so on.
26.8 MAX.
4.0
FEATURES
•
•
•
Surge Absorber (C - B) built in.
Easy m ount by 0.1 inch of term inal interval.
High hFE for Darlington Transistor.
1.4
0.5 ±0.1
2.54
1.4 0.6 ±0.1
ORDERING INFORMATION
Part Num ber
Package
Quality Grade
Standard
1 2 3 4 5 6 7 8 9 10
µPA1458H
10 Pin SIP
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Sem iconductor Devices"
(Docum ent num ber IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recom m ended applications.
3
5
7
9
2
1
4
6
8
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
Collector to Em itter Voltage
Em itter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Collector Current
VCBO
VCEO
VEBO
60 ±10
60 ±10
7
V
V
(C)
V
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
ECEO(sus) 25
IC(DC) ±5
IC(pulse)* ±10
m J /unit
A/unit
A/unit
m A/unit
A/unit
W
(B)
1, 10
: Emitter (E)
.
.
ICBS(DC)
IB(DC)
PT1**
PT2***
Tj
5
R1
R2
R1 = 3.0 kΩ
.
R2 = 300 Ω
.
Base Current (DC)
0.5
3.5
28
(E)
Total Power Dissipation
Total Power Dissipation
J unction Tem perature
Storage Tem perature
W
150
˚C
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
The inform ation in this docum ent is subject to change w ithout notice.
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994
Printed in Japan
P
1994
©
µPA1458
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
CHARACTERISTIC
Collector Leakage Current
Em itter Leakage Current
SYMBOL
ICES
MIN.
TYP.
60
MAX.
10
UNIT
µA
TEST CONDITIONS
VCE = 40 V
IEBO
10
m A
V
VEB = 5 V, IC = 0
Collector to Em itter
Sustaining Voltage
VCEO(sus)
50
70
IC = 3 A, L = 1 m H
*
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Tim e
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
2000
500
7000
3000
0.9
1.6
1
20000
—
—
V
VCE = 2 V, IC = 2 A
VCE = 2 V, IC = 4 A
IC = 2 A, IB = 2 m A
IC = 2 A, IB = 2 m A
*
*
*
1.5
2
V
µs
µs
µs
IC = 2 A
IB1 = –IB2 = 2 m A
Storage Tim e
tstg
7
.
.
VCC = 40 V, RL = 20 Ω
.
.
Fall Tim e
tf
2
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
.
RL = 20 Ω
.
Base Current
Wave Form
IB1
IC
VIN
IB1
IB2
T.U.T.
.
IB2
VCC = 40 V
.
90 %
10 %
Collector
Current
Wave Form
IC
PW
.
VBB = –5 V
.
.
PW = 50
Duty Cycle ≤ 2 %
µs
.
ton
tstg tf
2
µPA1458
TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
DERATING CURVE OF SAFE
OPERATING AREA
SAFE OPERATING AREA
10
5
100
80
µ
2
60
1
0.5
40
20
0.2
0.1
Single Pulse
0
50
100
150
1
5
10
20
50
100
TC - Case Temperature - ˚C
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
20
10
4 Circuits Operation
NEC
µPA1458
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
4
3
2
1
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ta - Ambient Temperature - ˚C
TC - Case Temperature - ˚C
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs. COLLECTOR CURRENT
100000
10000
1000
10
VCE = 2.0 V
Pulse Test
IC = 1000·IB
Pulse Test
1
Ta = –25 ˚C
75 ˚C
100
10
25 ˚C
125 ˚C
0.1
0.01
0.1
1
10
0.1
1
10
IC - Collector Current - A
IC - Collector Current - A
3
µPA1458
BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
TRANSIENT THERMAL RESISTANCE
VCE ≤ 10 V
100
10
10
IC = 1000·IB
Pulse Test
1
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
0.1
0.1
0.1
1
10
100
0.1
1
10
PW - Pulse Width - ms
IC - Collector Current - A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
5
4
3
2
1
0
1
2
3
4
5
VCE - Collector to Emitter Voltage - V
4
µPA1458
REFERENCE
Docum ent Nam e
Docum ent No.
NEC sem iconductor device reliability/quality control system .
Quality grade on NEC sem iconductor devices.
Sem iconductor device m ounting technology m anual.
Sem iconductor device package m anual.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
Guide to quality assurance for sem iconductor devices.
Sem iconductor selection guide.
5
µPA1458
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
相关型号：
UPA1476
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
NEC
UPA1476H
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
NEC
UPA1478
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
NEC
UPA1478H
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
NEC
UPA1478H-AZ
Power Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
NEC
©2020 ICPDF网 联系我们和版权申明