NE38018-T1-68-A [NEC]

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4;


型号：	NE38018-T1-68-A
厂家：	NEC
描述：	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 放大器 ISM频段光电二极管晶体管
文件：	总11页 (文件大小：75K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

Hetero Junction Field Effect transistor

NE38018

L to S BAND LOW NOISE AMPLIFER

N-CHANNEL HJ-FET

FEATURES

•

Super Low noise figure & High Associated Gain

NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP³= 22 dBm (V67), OIP³= 23 dBm (V68) TYP. @ f = 2 GHz

NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz

4 pins super mini mold package

Wg = 800 µ m

•

ORDERING INFORMATION

Part Number

NE38018-T1

Package

4 pins super mini mold package

Supplying Form

• Embossed tape 8 mm wide

• Pin3 (Source), Pin4 (Drain) face to perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE38018

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10216EJ01V0DS (1st edition)

(Previous No. P13494EJ1V0DS00)

Date Published January 2003 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 1998, 2003

NE38018

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C, unless otherwise specified)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GS

I^D

Ratings

4.0

Unit

–3.0

I^DSS

µA

°C

Gate Current

I^G

100

Total Power Temperature

Channel Temperature

Storage Temperature

P^tot

150^Note

T^ch

125

T^stg

–65 to +125

Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, T^A= +85°C

RECOMMENDED OPERATING RENGE (T^A= +25°C)

Parameter

Drain to Source Voltage

Drain Current

Symbol

V^DS

I^D

MIN.

TYP.

MAX.

Unit

–

dBm

Input Power

Pⁱⁿ

ELECTRICAL CHARACTERISTICS (T^A= +25°C, unless otherwise specified)

Parameter

Symbol

I^GSO

Test Conditions

MIN.

–

TYP.

1.0

MAX.

170

–1.5

–

Unit

µA

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cut off Voltage

Transconductance

V^GS= –3 V

I^DSS

V^DS= 2 V, V^GS= 0 V

–0.1

–

V^DS= 2 V, I^DS= 100 µA

V^GS(off)

g^m

–

V^DS= 2 V, I^DS= 5 mA

V^DS= 2 V, I^DS= 5 mA,

f = 2 GHz

–

Noise Figure

0.55

1.0

–

Associated Gain

12.5

–

14.5

Power Gain

–

Output Power at 1 dB Gain

Compression Point

P^{0(1 dB)}

V^DS= 3 V, I^DS= 30 mA,

f = 2 GHz

–

17 (V67)

18 (V68)

22 (V67)

23 (V68)

–

dBm

–

Output Third-Order Distortion

Intercept Point

OIP³

V^DS= 2 V, I^DS= 5 mA,

f = 2 GHz

–

dBm

–

I^DSSCLASSIFICATIONS

Rank

I^DSS(mA)

40 to 90

70 to 170

Marking

V67

V68

Data Sheet PG10216EJ01V0DS

NE38018

TYPICAL CHARACTERISTICS (T^A= +25°C)

TOTAL POWER DISSIPATION vs.

DRAIN CURRENT vs.

AMBIENT TEMPERATURE

250

DRAIN TO SOURCE VOLTAGE

100

200

150

100

GS = 0 V

–0.2 V

–0.4 V

–0.6 V

100

150

(˚C)

200

Ambient Temperature T

Drain to Source Voltage VDS (V)

DRAIN CURRENT vs.

GATE TO SOURCE VOLTAGE

NOISE FIGURE, ASSOCIATED GAIN vs.

DRAIN CURRENT

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

100

DS = 2 V

f = 2 GHz

–2.0

–1.0

Gate to Source Voltage VGS

(mA)

(

Drain Current I

Remark The graphs indicate nominal characteristics.

Data Sheet PG10216EJ01V0DS

NE38018

S-PARAMETER

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.csd-nec.com/

Data Sheet PG10216EJ01V0DS

NE38018

AMP. PARAMETERS

V^DS= 2 V

I^D= 5 mA

I^D= 10 mA

S²¹²

S¹²²

S²¹²

S¹²²

FREQUENCY

MHz

500

600

15.22

15.04

14.94

14.84

14.62

14.48

14.32

14.14

13.95

13.76

13.60

13.41

13.24

13.04

12.52

12.34

12.12

11.93

11.76

11.54

11.41

11.16

11.00

10.78

10.59

–27.52

–26.00

–24.89

–23.88

–23.08

–22.34

–21.85

–21.30

–20.75

–20.29

–19.92

–19.56

–19.23

–18.91

–18.63

–18.81

–18.53

–18.37

–18.18

–18.01

–17.84

–17.75

–17.54

–17.51

–17.34

–17.24

.13

.14

.15

.17

.19

.20

.23

.24

.26

.28

.30

.31

.33

.35

.37

.53

.55

.58

.60

.62

.65

.66

.70

.73

.75

.78

500

600

18.60

18.45

18.21

17.99

17.74

17.47

17.16

16.93

16.62

16.32

16.05

15.78

15.51

15.26

15.00

14.41

14.16

13.88

13.63

13.40

13.15

12.92

12.65

12.41

12.17

11.94

–28.57

–27.27

–26.12

–25.11

–24.37

–23.65

–23.10

–22.55

–22.08

–21.72

–21.25

–20.81

–20.58

–20.23

–19.89

–20.05

–19.71

–19.48

–19.24

–19.05

–18.84

–18.55

–18.44

–18.36

–18.10

–17.97

.20

.23

.25

.28

.31

.33

.37

.39

.43

.45

.47

.49

.52

.54

.56

.70

.73

.75

.77

.79

.81

.82

.86

.88

.90

.92

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2400

2500

2600

2700

2800

2900

3000

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2400

2500

2600

2700

2800

2900

3000

Data Sheet PG10216EJ01V0DS

NE38018

AMP. PARAMETERS

V^DS= 3 V

I^D= 5 mA

I^D= 10 mA

S²¹²

S¹²²

S²¹²

S¹²²

FREQUENCY

MHz

500

600

15.23

15.04

14.94

14.85

14.64

14.48

14.34

14.18

13.97

13.77

13.62

13.43

13.27

13.08

12.56

12.37

12.15

11.98

11.80

11.60

11.45

11.22

11.05

10.83

10.64

–27.70

–26.26

–25.03

–23.98

–23.30

–22.55

–21.98

–21.31

–20.82

–20.39

–20.15

–19.70

–19.42

–19.08

–18.75

–18.89

–18.62

–18.50

–18.31

–18.13

–17.93

–17.80

–17.72

–17.60

–17.49

–17.39

.13

.14

.15

.17

.18

.20

.23

.26

.28

.29

.31

.33

.35

.37

.52

.54

.57

.59

.61

.64

.66

.69

.72

.75

.78

500

600

18.63

18.47

18.22

18.00

17.76

17.48

17.22

16.95

16.67

16.39

16.10

15.85

15.57

15.34

15.07

14.51

14.27

13.99

13.75

13.52

13.28

13.08

12.81

12.58

12.34

12.12

–28.83

–27.37

–26.30

–25.37

–24.41

–23.80

–23.30

–22.72

–22.17

–21.74

–21.40

–21.06

–20.69

–20.40

–20.11

–20.08

–19.92

–19.60

–19.40

–19.21

–19.00

–18.80

–18.64

–18.42

–18.31

–18.15

.18

.22

.24

.26

.29

.32

.35

.37

.40

.42

.45

.47

.50

.52

.54

.68

.71

.73

.75

.77

.80

.81

.84

.86

.89

.91

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2400

2500

2600

2700

2800

2900

3000

1000

1100

1200

1300

1400

1500

1600

1700

1800

1900

2000

2100

2200

2300

2400

2500

2600

2700

2800

2900

3000

Data Sheet PG10216EJ01V0DS

NE38018

NOISE PARAMETERS

V^DS= 2 V, I^DS= 5 mA

Frequency (GHz)

Γopt

NF^min(dB)

Ga (dB)

Rn/50

MAG.

0.65

0.63

0.55

0.48

0.46

0.38

ANG. (deg)

25.1

0.9

1.0

1.5

1.9

2.0

2.5

0.41

0.42

0.48

0.54

0.55

0.62

21.1

20.3

16.9

15.0

14.7

13.4

0.18

0.17

0.16

0.15

0.13

27.2

42.4

58.0

62.1

81.3

V^DS= 2 V, I^DS= 10 mA

Frequency (GHz)

NFmin (dB)

Ga (dB)

Rn/50

MAG.

0.59

0.50

0.38

0.39

0.38

ANG. (deg)

29.2

0.9

1.0

1.5

1.9

2.0

2.5

0.37

0.38

0.44

0.49

0.50

0.56

22.0

21.8

17.6

15.6

15.5

13.9

0.13

0.12

0.11

0.10

38.0

39.6

45.1

54.4

70.3

V^DS= 3 V, I^DS= 5 mA

Frequency (GHz)

NFmin (dB)

Ga (dB)

Rn/50

MAG.

0.67

0.65

0.54

0.47

0.45

0.38

ANG. (deg)

24.9

0.9

1.0

1.5

1.9

2.0

2.5

0.41

0.42

0.48

0.54

0.55

0.62

21.8

20.8

16.9

14.8

14.4

13.3

0.18

0.17

0.16

0.15

0.13

26.9

42.1

57.8

61.8

80.7

Data Sheet PG10216EJ01V0DS

NE38018

PACKAGE DIMENSIONS

4-PIN SUPER MINI MOLD (UNIT: mm)

2.1 0.2

1.25 0.1

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

Data Sheet PG10216EJ01V0DS

NE38018

PRECAUTION

(1) Because this device is a HJ-FET with a Schottky barrier gate structure, it is necessary that sufficient care be

taken regarding static electricity and strong electric fields.

Take measures against static electricity and make sure the body is earthed when mounting the device.

(2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply.

Directly ground both the source pins.

Fix V^GSto approximately –2 V.

Increase V^DSto a predetermined voltage level (within the recommended operation range of V^DS).

Adjust V^GSin line with a predetermined I^D.

(3) It is recommended that the bias application circuit be able to have a fixed voltage and current.

(4) Adjust the I/O matching circuit after turning the bias OFF.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method

Infrared Reflow

Soldering Conditions

Condition Symbol

IR260

Peak temperature (package surface temperature)

Time at peak temperature

: 260°C or below

: 10 seconds or less

: 60 seconds or less

: 120 30 seconds

: 3 times

Time at temperature of 220°C or higher

Preheating time at 120 to 180°C

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

Peak temperature (package surface temperature)

Time at temperature of 200°C or higher

Preheating time at 120 to 150°C

: 215°C or below

: 25 to 40 seconds

: 30 to 60 seconds

: 3 times

VPS

VP215

WS260

HS350

Maximum number of reflow processes

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

Peak temperature (molten solder temperature)

Time at peak temperature

: 260°C or below

Wave Soldering

Partial Heating

: 10 seconds or less

Preheating temperature (package surface temperature) : 120°C or below

Maximum number of flow processes

: 1 time

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

Peak temperature (pin temperature)

: 350°C or below

Soldering time (per side of device)

: 3 seconds or less

: 0.2%(Wt.) or below

Maximum chlorine content of rosin flux (% mass)

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PG10216EJ01V0DS

NE38018

•

The information in this document is current as of January, 2003. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

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and visual equipment, home electronic appliances, machine tools, personal electronic equipment

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"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

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to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

Data Sheet PG10216EJ01V0DS

NE38018

SAFETY INFORMATION ON THIS PRODUCT

The product contains gallium arsenide, GaAs.

GaAs vapor and powder are hazardous to human health if inhaled or ingested.

Caution GaAs Products

• Do not destroy or burn the product.

• Do not cut or cleave off any part of the product.

• Do not crush or chemically dissolve the product.

• Do not put the product in the mouth.

Follow related laws and ordinances for disposal. The product should be excluded from general

industrial waste or household garbage.

Business issue

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com

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TEL: +852-3107-7303

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TEL: +1-408-988-3500 FAX: +1-408-988-0279

Technical issue

NEC Compound Semiconductor Devices, Ltd.

http://www.csd-nec.com/

Sales Engineering Group, Sales Division

E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918

0209

NE38018-T1-68-A [NEC]

相关型号：

NE38018-T1-A

NE38018-T2

NE38018-T2-67

NE38018-T2-67-A

NE38018-T2-68

NE38018-T2-68-A

NE38018-T2-A

NE38018-TI-67

NE38018-TI-68

NE38018T2

NE38018T2-A

NE38018_00