NE38018-TI-68 [NEC]
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package); 砷化镓HJ - FET在提单上S波段低噪声放大器（新塑料封装）
| 型号： | NE38018-TI-68 |
| 厂家： | 
NEC |
| 描述： | GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
| 文件： | 总9页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs HJ-FET
L TO S BAND LOW NOISE AMPLIFIER
(New Plastic Package)
NE38018
NOISE FIGURE & ASSOCIATED
FEATURES
GAIN vs. FREQUENCY
VCE = 2 V, ID= 5 mA
•
•
•
LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
25
20
15
10
5
4
3
2
1
0
LOW NOISE FIGURE:
0.55 dB typical at 2 GHz
GA
HIGH ASSOCIATED GAIN:
14.5 dB typical at 2 GHz
•
•
LG = 0.6 µm, WG = 800 µm
TAPE & REEL PACKAGING
0
DESCRIPTION
NF
The NE38018 is a low cost gallium arsenide Hetero-Junction
FET housed in a miniature (SOT-343) plastic surface mount
package. The device is fabricated using ion implantation for
improved RF and DC performance, reliability, and uniformity.
Its low noise figure, high gain, small size and weight make it
an ideal low noise medium power amplifier transistor in the 1-
3 GHz frequency range. The NE38018 is suitable for GPS,
PCS, WLAN, MMDS, and other commercial applications.
0.5
1
2
3
4
5 6 7 8 910
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
18 Package
SOT-343 Style
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE38018
PACKAGE OUTLINE
18
SYMBOL
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF1
Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz
Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz
dB
dB
0.55
14.5
1.0
1
GA
12.5
P1dB
Output Power at 1 dB Gain Compression Point, f = 2 GHz
VDS = 2 V, IDS = 15 mA
dBm
dBm
12
17 (V67)
18 (V68)
VDS = 3 V, IDS = 30 mA
G1dB
Gain at P1dB, f = 2 GHz
VDS = 2 V, IDS = 10 mA
VDS = 3 V, IDS = 20 mA
dB
dB
16.0
16.5
MAG
VDS = 2 V, IDS = 5 mA, f = 2 GHz
16.5
O/P IP3
Output IP3 at f = 2 GHz, ∆f = 1 MHz, VDS = 3 V, IDS = 5 mA
dBm
dBm
22 (V67)
23 (V68)
IDSS
VP
Saturated Drain Current at VDS = 2 V, VGS = 0 V
Pinch Off Voltage at VDS = 2 V, ID = 100 µA
Transconductance at VDS = 2 V, ID = 5 mA
Gate to Source Leakage Current at VGS = -3 V
Thermal Resistance (Channel to Ambient)
mA
V
40
-0.1
50
100
-0.8
80
170
-1.5
gm
mS
µA
IGSO
1
20
RTH(CH-A)
˚C/W
833
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
NE38018
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL NOISE PARAMETERS (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
FREQ.
(GHz)
NFOPT
(dB)
GA
ΓOPT
(dB)
MAG
ANG
Rn/50
VDS
IG
Drain to Source Voltage
Gate Current
V
µA
V
4
100
VDS = 2 V, IDS = 5 mA
0.9
1.0
1.5
1.9
2.0
2.5
0.41
0.42
0.48
0.54
0.55
0.62
21.1
20.3
16.9
15.0
14.7
13.4
0.65
0.63
0.55
0.48
0.46
0.38
25.1
27.2
42.4
58.0
62.1
81.3
0.18
0.18
0.17
0.16
0.15
0.13
VGSO
IDS
Gate to Source Voltage
Drain Current
-3
mA
°C
°C
mW
IDSS
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Total Power Dissipation
125
-65 to +125
150
Note:
VDS = 2 V, IDS = 10 mA
1. Operation in excess of any one of these parameters may result
in permanent damage.
0.9
1.0
1.5
1.9
2.0
2.5
0.37
0.38
0.44
0.49
0.50
0.56
22.0
21.8
17.6
15.6
15.5
13.9
0.59
0.50
0.50
0.38
0.39
0.38
29.2
38.0
39.6
45.1
54.4
70.3
0.13
0.12
0.12
0.11
0.11
0.10
RECOMMENDED OPERATING
CONDITIONS (TA = 25°C)
SYMBOLS
PARAMETERS
Drain to Source Voltage
Drain Current
UNITS MIN TYP MAX
VDS = 3 V, IDS = 5 mA
VDS
ID
V
1
2
2
5
3
30
0
0.9
1.0
1.5
1.9
2.0
2.5
0.41
0.42
0.48
0.54
0.55
0.62
21.8
20.8
16.9
14.8
14.4
13.3
0.67
0.65
0.54
0.47
0.45
0.38
24.9
26.9
42.1
57.8
61.8
80.7
0.18
0.18
0.17
0.16
0.15
0.13
mA
dBm
Pin
Input Power
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE & ASSOCIATED GAIN
vs. DRAIN CURRENT
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
150
100
50
2.0
20
V
DS = 2V
f = 2 GHz
1.8
1.6
1.4
1.2
1.0
18
16
14
12
10
FREE AIR
Ga
0.8
0.6
8
6
0.4
0.2
4
2
NF
RTH = 833˚C/W
0
20˚C
125˚C
0
0
5
10
15
20
25
30
200
100
150
50
Drain Current, ID (mA)
Ambient Temperature, TA (˚C)
NE38018
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT AND TRANSCONDUCTANCE
vs. GATE TO SOURCE VOLTAGE
DC PERFORMANCE
V
GS = 0.00 V
100
300
240
180
120
0.06 V
100
80
80
60
40
20
0.12 V
0.18 V
0.24 V
60
120
60
40
20
0.30 V
0.36 V
0.42
V
I
G
DSS = 97 mA
= 80 mS
2 V, 5 mA
M
0.00
0.00
0.00
-800
-600
-400
-200
0.00
0.00
1.0
2.0
4.0
3.0
5.0
Drain Voltage, VDS (V)
Gate to Source Voltage, VGS (mV)
OUTPUT POWER AND
INTERMODULATION PRODUCTS
vs. INPUT POWER
OUTPUT POWER, GAIN AND POWER
ADDED EFFICIENCY vs. INPUT POWER
VDS = 3 V, IDS = 20 mA, f = 2 GHz
VDS = 3 V, IDS = 20 mA, f = 2 GHz
18
20
50
0
P
OUT @ 1 dB = 17 dBm
16
14
Gain @ 1 dB = 16.5 dB
Efficiency @ 1 dB = 38%
P
45
40
35
-10
-20
SAT @ 1 dB = 17.5 dBm
0
12
10
8
30
-30
-20
25
20
6
4
2
0
-40
-50
15
10
5
-40
-60
Output Power
IM3
IM5
Power Out
Efficiency
Gain
-60
-2
-4
0
-20
-15
-10
-5
0
5
-20
-15
-10
-5
0
5
Input Power, PIN (dBm)
Input Power, PIN (dBm)
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
60°
j100
j25
150°
30°
j10
0
10
25
50
100
S12
.10 GHz
0
180°
0°
S21
.10 GHz
12 GHz
12 GHz
S22
.10 GHz
12 GHz
12 GHz
S11
.10 GHz
-j10
-150°
-30°
-j100
-j25
-120°
-60°
-90°
-j50
VDS = 2 V, IDS = 5 mA
FREQUENCY
S11
S21
S12
S22
K
MAG1
(dB)
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.992
1.027
0.999
0.981
0.964
0.876
0.773
0.686
0.604
0.542
0.496
0.472
0.476
0.506
0.548
0.603
0.677
0.750
0.800
0.829
-2.50
-10.20
-17.98
-24.47
-29.81
-56.41
-79.57
-100.40
-120.28
-140.30
-160.84
178.65
141.84
112.81
87.17
6.847
6.717
6.698
6.640
6.518
5.830
5.119
4.506
4.005
3.590
3.239
2.941
2.464
2.109
1.833
1.600
1.382
1.184
1.011
0.873
175.44
171.01
165.35
160.28
154.91
131.52
111.75
94.58
78.97
64.57
50.93
38.00
0.009
0.017
0.025
0.033
0.041
0.073
0.096
0.114
0.127
0.138
0.147
0.155
0.169
0.183
0.199
0.212
0.223
0.229
0.231
0.232
86.79
84.51
79.74
76.53
72.59
56.83
44.71
35.02
26.80
19.51
12.72
6.47
0.642
0.626
0.632
0.632
0.623
0.561
0.493
0.430
0.370
0.314
0.263
0.219
0.167
0.154
0.161
0.207
0.307
0.422
0.511
0.571
-7.96
-11.36
-13.98
-17.71
-21.83
-40.01
-54.94
-67.65
-79.24
-90.98
-103.80
-118.63
-156.15
164.89
124.93
82.05
0.05
-0.16
0.00
0.06
0.12
0.28
0.42
0.54
0.67
0.77
0.87
0.94
1.04
1.09
1.11
1.13
1.10
1.03
0.98
0.95
28.63
25.95
24.23
22.99
22.03
19.04
17.28
16.01
15.02
14.18
13.45
12.80
10.46
8.79
7.60
6.59
6.03
6.04
6.43
5.78
13.65
-8.88
-5.34
-16.40
-28.79
-42.18
-56.42
-71.03
-85.60
-100.40
-30.86
-52.62
-74.07
-94.38
-113.63
-132.22
62.70
40.36
21.52
5.69
53.73
35.57
19.76
2.76
-9.17
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11 2 - |S22
| |
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(
K ±
MAG =
MSG =
, K =
,
|S12
|
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
60°
j100
j25
150°
30°
j10
0
10
25
50
S21
.10 GHz
100
0
S12
.10 GHz
180°
0°
S22
.10 GHz 12 GHz
12 GHz
S11
12 GHz
.10 GHz
-j10
12 GHz
-150°
-30°
-j100
-j25
-120°
-60°
-90°
-j50
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
S21
S12
S22
K
MAG1
(dB)
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.992
1.000
0.991
0.967
0.943
0.815
0.689
0.593
0.513
0.458
0.423
0.410
0.433
0.472
0.520
0.579
0.659
0.734
0.785
0.814
-3.80
-12.31
-21.04
-28.50
-34.68
-63.96
-88.19
-109.25
-129.18
-149.33
-169.94
169.75
134.29
106.93
82.83
9.822
9.639
9.541
9.383
9.134
7.764
6.502
5.522
4.772
4.188
3.722
3.343
2.765
2.350
2.035
1.769
1.529
1.317
1.139
1.000
174.93
169.20
162.65
156.82
150.85
125.49
105.45
88.71
73.87
60.34
47.65
35.63
0.008
0.015
0.022
0.029
0.035
0.063
0.083
0.100
0.115
0.129
0.143
0.155
0.179
0.200
0.219
0.232
0.241
0.244
0.243
0.242
87.39
84.00
80.28
76.20
72.64
58.52
48.85
41.27
34.71
28.25
21.92
15.50
2.21
-11.13
-25.78
-41.12
-56.67
-72.00
-87.00
-102.03
0.487
0.477
0.477
0.475
0.464
0.397
0.334
0.280
0.231
0.187
0.147
0.116
0.102
0.128
0.167
0.239
0.342
0.445
0.520
0.567
-9.73
-13.87
-17.02
-21.39
-25.94
-45.59
-60.27
-72.14
-83.06
-95.23
-110.79
-132.15
170.07
127.00
91.67
0.06
-0.14
0.05
0.12
0.19
0.40
0.58
0.71
0.82
0.90
0.96
1.00
1.05
1.07
1.08
1.09
1.07
1.03
0.99
0.98
30.8
28.1
26.4
25.1
24.1
20.9
19.0
17.4
16.2
15.1
14.2
13.0
10.6
9.1
8.0
7.0
6.4
6.3
6.7
6.2
12.86
-8.50
-29.55
-50.43
-70.98
-90.40
-109.06
-127.38
59.50
38.07
19.78
4.28
59.52
38.95
24.63
10.69
-10.33
-5.07
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11 2 - |S22
| |
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(
K ±
MAG =
MSG =
, K =
,
|S12
|
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
90°
120°
60°
j100
j25
150°
30°
j10
S12
.10 GHz
10
25
50
100
S21
.10 GHz
0
0
S11
.10 GHz
180°
0°
S22
.10 GHz
12 GHz
12 GHz
12 GHz
-j10
12 GHz
-150°
-30°
-j100
-j25
-120°
-60°
-j50
-90°
VDS = 2 V, IDS = 20 mA
FREQUENCY
S11
S21
S12
S22
K
MAG1
(dB)
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.992
1.000
0.982
0.952
0.918
0.758
0.620
0.523
0.448
0.400
0.375
0.370
0.405
0.449
0.501
0.564
0.647
0.724
0.776
0.805
-5.06
-14.26
-23.84
-32.12
-38.97
-70.06
-94.61
-115.52
-135.35
-155.49
-176.15
163.70
129.39
103.27
80.15
12.743
12.486
12.265
11.944
11.531
9.340
7.527
6.235
5.294
4.587
4.045
3.611
2.967
2.513
2.170
1.882
1.625
1.402
1.220
1.081
174.22
167.43
160.10
153.54
147.07
120.51
100.66
84.55
70.45
57.62
45.60
34.20
0.007
0.013
0.019
0.025
0.031
0.055
0.074
0.093
0.110
0.127
0.144
0.159
0.187
0.211
0.231
0.245
0.251
0.253
0.250
0.248
88.57
84.68
80.49
77.09
73.91
62.14
54.30
47.65
41.25
34.62
27.79
20.78
6.21
0.344
0.338
0.335
0.332
0.321
0.263
0.213
0.173
0.138
0.105
-11.92
-16.65
-19.97
-24.86
-29.61
-49.67
-63.22
-73.71
-83.99
-97.82
0.08
-0.11
0.10
0.19
0.27
0.53
0.71
0.83
0.91
0.96
1.00
1.02
1.04
1.05
1.05
1.06
1.05
1.02
1.00
0.99
32.62
29.75
28.00
26.70
25.68
22.29
20.04
18.27
16.81
15.57
14.50
12.66
10.77
9.40
8.29
7.33
6.73
6.49
6.65
6.39
0.075 -121.02
0.060 -159.78
12.46
-8.15
0.097
0.145
0.196
0.276
0.376
0.473
0.541
0.581
134.07
103.25
75.95
49.96
32.15
19.01
5.58
-8.47
-28.58
-48.89
-68.85
-87.73
-105.84
-123.82
-24.24
-40.53
-56.68
-72.41
-87.59
-102.80
57.58
36.64
18.68
3.43
-11.10
-9.91
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11 2 - |S22
| |
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(K ±
MAG =
MSG =
, K =
,
|S12
|
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE38018
TYPICAL SCATTERING PARAMETERS (TA = 25 °C)
j50
90°
120°
60°
j100
j25
150°
30°
j10
S12
.10 GHz
S21
.10 GHz
10
25
50
100
S22
.10 GHz
0
0
180°
0°
12 GHz
12 GHz
12 GHz
S11
.10 GHz
-j10
12 GHz
-150°
-30°
-j100
-j25
-120°
-60°
-90°
-j50
VDS = 3 V, IDS = 20 mA
FREQUENCY
(GHz)
S11
S21
S12
S22
K
MAG1
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.10
0.20
0.30
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.991
1.000
0.982
0.953
0.920
0.761
0.623
0.525
0.450
0.401
0.374
0.369
0.402
0.446
0.498
0.561
0.645
0.723
0.776
0.806
-4.94
-14.12
-23.65
-31.83
-38.63
-69.55
-93.97
-114.82
-134.56
-154.62
-175.27
164.59
130.10
103.91
80.73
12.631
12.376
12.164
11.856
11.451
9.300
7.511
6.229
5.295
4.593
4.052
3.620
2.979
2.527
2.185
1.899
1.643
1.419
1.234
1.091
174.25
167.54
160.26
153.75
147.30
120.79
100.94
84.81
70.69
57.84
45.81
34.39
0.007
0.013
0.019
0.025
0.031
0.055
0.074
0.091
0.108
0.125
0.140
0.155
0.183
0.207
0.227
0.241
0.249
0.251
0.249
0.248
87.26
83.63
80.29
77.02
73.59
61.65
53.68
47.11
40.91
34.43
27.75
20.95
6.58
0.378
0.371
0.369
0.365
0.354
0.291
0.239
0.196
0.160
0.125
-11.30
-15.83
-19.06
-23.73
-28.39
-47.62
-60.59
-70.43
-79.67
-91.32
0.07
-0.10
0.10
0.19
0.27
0.52
0.70
0.82
0.91
0.96
1.00
1.02
1.04
1.05
1.06
1.06
1.05
1.02
0.99
0.98
32.84
29.78
27.99
26.69
25.68
22.32
20.08
18.34
16.89
15.66
14.60
12.72
10.84
9.48
8.38
7.42
6.84
6.66
6.95
6.44
0.091 -109.07
0.067 -139.28
12.59
-8.08
0.082
0.126
0.174
0.253
0.355
0.455
0.526
0.569
146.70
109.81
79.83
52.19
33.99
20.78
7.29
-7.79
-28.56
-48.95
-69.05
-88.12
-106.45
-124.65
-23.38
-39.52
-55.59
-71.31
-86.55
`-101.85
58.12
37.13
19.17
3.81
-10.76
-8.23
Note:
1. Gain Calculations:
2
1 + | ∆ |2 - |S11
|
2 - |S22
S21|
|
|S21
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|S12
|
|
(
K ±
MAG =
MSG =
, K =
,
|S12
|
2 |S12
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE38018
NE38018 NONLINEAR MODEL
SCHEMATIC
CGD_PKG
0.003pF
LD_PKG
0.1nH
LD
DRAIN
0.87nH
Q1
LG_PKG
LG
GATE
0.55nH
0.7nH
CDS_PKG
0.15pF
CDX
0.04pF
LS
0.28nH
CCG_PKG
0.12pF
LS_PKG
0.05nH
CGX
0.12pF
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameter
time
Units
seconds
farads
henries
ohms
Parameters
VTO
Q1
-0.5935
0
Parameters
RG
Q1
2.5
3
capacitance
inductance
resistance
voltage
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
RD
7
RS
1.5
0
1.14
0.044
0.03
3.5
RGMET
KF
volts
0
current
amps
AF
1
TNOM
XTI
27
3
DELTA
VBI
0
MODEL RANGE
Frequency: 0.5 to 12 GHz
0.8
EG
1.43
0
IS
1e-14
1.3
VTOTC
BETATCE
FFE
Bias:
VDS = 2 V to 3 V, ID = 10 mA to 40 mA
IDSS = 97 mA @ VGS = 0 V, VDS = 2 V
VDS = 2 V, ID = 20 mA, 2 GHz
4/98
N
0
Power:
Date:
RIS
2.3
1
RID
2.3
TAU
1e-12
0.1e-12
5000
1e-11
1.2e-12
0.145e-12
0.3
CDS
RDB
CBS
CGSO
CGDO
DELTA 1
DELTA 2
FC
0.2
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
NE38018
ORDERING INFORMATION
OUTLINE DIMENSIONS (Units in mm)
PART NUMBER
QTY
IDSS RANGE MARKING
(mA)
PACKAGE OUTLINE 18
NE38018
Bulk up to 3 K
3 K/Reel
40-165
40-90
V67 or V68
V67
2.1 ± 0.2
NE38018-TI-67
NE38018-TI-68
+0.10
0.3
-0.05
(LEADS 2, 3, 4)
1.25 ± 0.1
3 K/Reel
70-170
V68
2
1
3
4
0.65
0.60
0.65
0.65
2.0 ± 0.2
1.3
Pin Connections
1. Source
2. Gate
3. Source
4. Drain
+0.10
0.4
-0.05
0.3
0.9 ± 0.1
+0.10
-0.05
0.15
0 to 0.1
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
10/11/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关型号：
NE38018T2
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET,
NEC
NE38018T2-A
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET,
NEC
©2020 ICPDF网 联系我们和版权申明