2SK4058-ZK-E2-AY [NEC]
Small Signal Field-Effect Transistor, 48A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, 3 PIN;型号: | 2SK4058-ZK-E2-AY |
厂家: | NEC |
描述: | Small Signal Field-Effect Transistor, 48A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, MP-3ZK, 3 PIN |
文件: | 总8页 (文件大小:237K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4058
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low QGD: QGD = 6.5 nC TYP.
• 4.5 V drive available
(TO-251)
ORDERING INFORMATION
PART NUMBER
PACKAGE
Note
<R>
2SK4058(1)-S27-AY
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note
2SK4058-ZK-E1-AY
Note
2SK4058-ZK-E2-AY
Note Pb-free (This product does not contain Pb in external electrode.)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
25
±20
V
V
±48
A
±144
29
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
W
W
°C
°C
A
PT2
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
22
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
48.4
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18033EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK4058
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 25 V, VGS = 0 V
MIN.
TYP.
MAX.
UNIT
μA
nA
V
10
±100
2.5
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 24 A
VGS = 4.5 V, ID = 24 A
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
7
2.0
14
Note
Forward Transfer Admittance
S
Note
Drain to Source On-state Resistance
6.3
9.8
1670
320
170
11
8.0
mΩ
mΩ
pF
pF
pF
ns
14.5
Input Capacitance
Output Capacitance
VDS = 10 V
VGS = 0 V
f = 1 MHz
Coss
Crss
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
td(on)
tr
VDD = 12 V, ID = 24 A
VGS = 10 V
7.5
39
ns
RG = 3 Ω
Turn-off Delay Time
Fall Time
td(off)
tf
ns
7.5
31
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
QG
VDD = 12 V
VGS = 12 V
ID = 48 A
nC
nC
nC
Ω
QGS
QGD
RG
5.1
6.5
2.4
0.96
31
Note
Body Diode Forward Voltage
VF(S-D)
IF = 48 A, VGS = 0 V
IF = 48 A, VGS = 0 V
di/dt = 100 A/μs
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
trr
ns
Qrr
23
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
V
DD
V
V
DS
90%
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
R
L
PG.
50 Ω
V
DD
2
Data Sheet D18033EJ2V0DS
2SK4058
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs CASE TEMPERATURE
1000
100
10
60
50
40
30
20
10
0
I
D(pulse)
P/W = 100 μs
I
D(DC)
1 ms
R
DS(on) Limited
(VGS = 10 V)
Power Dissipation Limited
10 ms
1
T
C
= 25°C
Single pulse
0.1
0
50
100
150
0.1
1
10
100
VDS - Drain to Source Voltage - V
TC –Case Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-A) = 125°C/W
R
th(ch-C) = 4.31°C/W
1
Single Pulse
100 1000
0.1
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width – s
3
Data Sheet D18033EJ2V0DS
2SK4058
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
200
150
100
50
100
10
Tch = −55°C
−25°C
25°C
VGS = 10 V
50°C
75°C
125°C
150°C
1
4.5 V
0.1
0.01
VDS = 10 V
Pulsed
Pulsed
0
0
1
2
3
4
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
100
10
1
T
ch = −55°C
−25°C
25°C
50°C
75°C
125°C
150°C
VDS = 10 V
ID = 1 mA
2.5
2
1.5
1
0.5
0
V
DS = 10 V
Pulsed
0.1
-75
-25
25
75
125
175
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
50
Pulsed
Pulsed
45
25
20
15
40
35
30
25
20
15
10
5
I
D
= 48 A
24 A
9.6 A
V
GS = 4.5 V
10
5
10 V
0
0
1
10
100
1000
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D18033EJ2V0DS
2SK4058
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
10000
1000
100
C
iss
15
V
GS = 4.5 V
C
oss
10
5
C
rss
10 V
I = 24 A
Pulsed
D
V
GS = 0 V
f = 1 MHz
0
10
-75
-25
25
75
125
175
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
25
20
15
10
5
12
10
8
t
d(off)
V
DD = 20 V
12 V
V
GS
t
d(on)
6
10
t
r
4
t
f
V
V
DD = 12 V
GS = 10 V
V
DS
2
R = 3 Ω
G
I
D
= 48 A
0
0
1
0
10
20
30
40
0.1
1
10
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1000
100
10
di/dt = 100 A/μs
V
GS = 10 V
V
GS = 0 V
4.5 V
0 V
1
0.1
0.01
Pulsed
1
0.1
1
10
100
0
0.5
1
1.5
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D18033EJ2V0DS
2SK4058
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
120
100
80
60
40
20
0
V
R
V
DD = 12 V
= 25 Ω
GS = 20 → 0 V
G
I
AS = 22 A
I
AS ≤ 22 A
E
AS = 48.4 mJ
V
V
R
DD = 12 V
GS = 20 → 0 V
= 25 Ω
Starting Tch = 25°C
G
0.01
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D18033EJ2V0DS
2SK4058
PACKAGE DRAWINGS (Unit: mm)
1) TO-251(MP-3-b)
<R>
2) TO-252 (MP-3ZK)
2.3±±.1
6.6±±.2
2.3 ±.1
6.5 ±.2
5.1 TYP.
4.3 MIN.
5.3 TYP.
±.5±±.1
±.5 ±.1
4
No Plating
4
1
2
3
1
2
3
1.14 MAX.
No Plating
±.76 ±.12
±.76±±.12
2.3 TYP.
±.5±±.1
1.14 MAX.
± to ±.25
±.5 ±.1
2.3 2.3
2.3 TYP.
1.±
1. Gate
1.Gate
2. Drain
2.Drain
3.Source
3. Source
4. Fin (Drain)
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D18033EJ2V0DS
2SK4058
•
The information in this document is current as of March, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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•
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M8E ±2. 11-1
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