2SK4059TV-B [TOSHIBA]
TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General Purpose Small Signal;
| 型号： | 2SK4059TV-B |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General Purpose Small Signal |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK4059TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TK
For ECM
Unit: mm
•
Application for compact ECM
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta=25°C)
1
2
Characteristic
Gate-Drain voltage
Symbol
Rating
Unit
3
V
-20
10
V
GDO
Gate Current
I
mA
mW
°C
G
Drain power dissipation (Ta = 25°C)
Junction Temperature
P
100
D
T
125
j
Storage temperature range
T
stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
1.Drain
2.Source
3.Gate
TESM3
JEDEC
-
-
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
JEITA
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
IDSS CLASSIFICATION
A-Rank
B-Rank
140~240µA
210~350µA
BK-Rank 210~400µA
C-Rank 320~500µA
Marking
Equivalent Circuit
D
Type Name
IDSS Classification Symbol
A :A-Rank
8
G
BK-Rank
B :B-Rank
C :C-Rank
S
1
2007-11-01
2SK4059TK
Electrical Characteristics (Ta=25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
µA
A
B
140
210
⎯
⎯
⎯
⎯
240
350
400
500
260
370
420
500
-1.0
⎯
Drain Current
I
V
V
= 2 V, V
= 0
GS
DSS
DS
DD
BK 210
C
A
B
320
125
190
⎯
⎯
Drain Current
I
= 2 V, RL= 2.2kΩ,Cg = 5pF
µA
D
BK 190
⎯
C
290
-0.1
1.35
-20
⎯
Gate-Source Cut-off Voltage
Forward transfer admittance
Gate-Drain Voltage
V
V
V
= 2 V, I = 1μA
⎯
V
GS(OFF)
DS
DS
D
|Y |
fs
= 2 V,V
= 0V
1.85
⎯
mS
V
GS
V
IG=-10μA
⎯
(BR)GDO
Input capacitance
C
V
= 2 V, V = 0, f = 1 MHz
GS
⎯
4.0
+0.9
+1.4
+1.7
+1.8
0
⎯
pF
iss
DS
A
B
-1.2
-0.2
⎯
⎯
Voltage Gain
Gv
V
= 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV
dB
dB
dB
DD
BK -0.2
⎯
C
+0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Delta Voltage Gain
Delta Voltage Gain
DGv(f)
V
V
= 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz~100Hz,vin=100mV
-1
DD
DD
A
B
-0.6
-0.8
-1.1
-1.4
33
-1.1
-1.7
-2.0
-3.2
75
= 2V~1.5V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz,
DGv(V)
vin=100mV
BK
C
A
B
38
80
Noise Voltage
VN
V
= 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter
mV
DD
BK
C
40
85
42
90
A
1.3
0.6
0.5
0.1
100
⎯
B
⎯
Total Harmonic Distortion
Time Output Stability
THD
tos
V
V
= 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz, vin=50mV
= 2V, RL= 2.2kΩ,Cg = 5pF
%
DD
DD
BK
C
⎯
⎯
200
ms
Time Output Stability Test Method
a) TEST CIRCUIT
b) TEST SIGNAL
V
DD
2V
V
DD=2.0V
50%
Vout
0V
Vout
V
DD-ID*RL
90%
0V
t
os
2
2007-11-01
2SK4059TK
I
D
– V
GS
I
D
– V
GS
600
500
600
VDS=2V
Common Source
Ta = 25 °C
VDS=2V
Common Source
500
400
300
IDSS=470μA
400
300
Ta=85℃
IDSS=250μA
Ta=25℃
200
100
0
200
100
0
Ta=-40℃
IDSS=170μA
-1.0
-0.8
-0.6
-0.4
-0.2
0
-1.0
-0.8
-0.6
-0.4
-0.2
0
Gate - Source voltage
V
(V)
GS
Gate - Source voltage
V
(V)
GS
V
– I
DSS
GS(OFF)
|Yfs| – I
DSS
-500
3
-400
2
1
-300
-200
VGS(OFF):VDS=2V
ID = 1μA
|Yfs|:VDS=2V
VGS=0V
IDSS:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
-100
0
Common Source
Common Source
Ta = 25 °C
Ta = 25 °C
0
0
100
200
300
400
500
600
100
200
300
600
400
500
Drain Current
I
(µA)
DSS
Drain Current
I
(µA)
DSS
DGv(V)– I
DSS
Gv– I
DSS
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
2.5
2.0
DGv:VDD=2V→1.5V
Gv:VDD=2V
Cg=5pF
RL= 2.2kΩ,
f=1kHz
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
vin=100mV
IDSS: VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
1.5
1.0
Common Source
Ta = 25°C
0.5
0
0
100
200
300
400
500
600
0
100
200
300
400
500
600
Drain Current
I
(µA)
Drain Current
I
(µA)
DSS
DSS
3
2007-11-01
2SK4059TK
Gv – Cg
VN – I
DSS
10
5
60
50
IDSS=470μA
IDSS=170μA
0
40
30
VN:VDD=2V
-5
Cg=10pF
RL= 1kΩ
f=1kHz
VDD=2V
-10
-15
-20
Cg=5pF
RL= 2.2kΩ,
f=1kHz
vin=100mV
Common Source
Ta = 25°C
80dB AMP
A-Curve Filter
20
10
0
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
0
2
4
6
8
10
0
100
200
300
400
500
600
Drain Current
I
(µA)
Electret Capacitance Cg (pF)
DSS
THD– I
DSS
C – V
iss DS
2.0
1.5
1.0
10
5
THD:VDD=2V
Cg=5pF
RL= 2.2kΩ
f=1kHz
vin=50mV
IDSS: VDS=2V
VGS=0V
Common Source
Ta = 25°C
0.5
0
VGS=0V
f=1kHz
Common Source
Ta = 25°C
1
1
10
5
0
100
200
300
400
500
600
Drain - Source voltage
V
(V)
DS
Drain Current
I
(µA)
DSS
4
2007-11-01
2SK4059TK
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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