2SK3577-A [NEC]
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-96, 3 PIN;
| 型号： | 2SK3577-A |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-96, 3 PIN 晶体 开关 小信号场效应晶体管 光电二极管 |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3577
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The 2SK3577 is a switching device which can be driven
directly by a 2.5 V power source.
+0.1
–0.05
0.4
+0.1
–0.06
0.16
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
3
0 to 0.1
FEATURES
• 2.5 V drive available
1
2
• Low on-state resistance
RDS(on)1 = 63 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 65 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 91 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
0.65
0.95 0.95
1.9
0.9 to 1.1
2.9 ±0.2
ORDERING INFORMATION
1
: Gate
2 : Source
3 : Drain
PART NUMBER
2SK3577
PACKAGE
SC-96 (Mini Mold Thin Type)
Marking: XL
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
EQUIVALENT CIRCUIT
VDSS
VGSS
ID(DC)
30
±12
V
V
Drain
±3.5
A
Drain Current (pulse) Note1
Body
Diode
ID(pulse)
PT1
±14
A
Gate
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
Channel Temperature
0.2
W
W
°C
°C
PT2
1.25
Gate
Protection
Diode
Tch
150
Source
Storage Temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published May 2002 NS CP(K)
Printed in Japan
D15938EJ1V0DS00 (1st edition)
2001
©
2SK3577
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 30 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
1.5
µA
µA
V
IGSS
VGS = ±12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 2.0 A
VGS = 4.5 V, ID = 2.0 A
VGS = 4.0 V, ID = 2.0 A
VGS = 2.5 V, ID = 2.0 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
0.5
1.0
1.0
4.9
50
Forward Transfer Admittance
Drain to Source On-state Resistance
S
63
65
91
mΩ
mΩ
mΩ
pF
pF
pF
ns
52
68
Input Capacitance
260
60
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V
Crss
f = 1.0 MHz
35
td(on)
VDD = 10 V, ID = 2.0 A
VGS = 4.0 V
28
tr
200
80
ns
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
ns
tf
120
3.0
0.8
1.2
0.89
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
VDD = 24 V
nC
nC
nC
V
QGS
VGS = 4.0 V
QGD
ID = 3.5 A
VF(S-D)
IF = 3.5 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
V
GS
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
50 Ω
PG.
V
DD
DS
90%
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1µs
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet D15938EJ1V0DS
2SK3577
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
1.5
1.25
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(on) Limited
(VGS = 4.5 V)
ID(pulse)
10
1
D(DC)
I
PW = 1 ms
10 ms
100 ms
5 s
0.1
0.01
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Single Pulse
Without board
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
1
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D15938EJ1V0DS
2SK3577
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
100
10
15
10
5
VDS = 10 V
Pulsed
Pulsed
GS
V
= 4.5 V
TA = 125°C
75°C
4.0 V
1
25°C
−25°C
0.1
0.01
2.5 V
0.001
0.0001
0.00001
0
0
1
2
3
0
0.2
0.4
0.6
0.8
1
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.5
100
10
DS
V
= 10 V
DS
V
I
= 10 V
Pulsed
D
= 1.0 mA
A
−
T
=
25°C
25°C
75°C
125°C
1
1
0.1
0.01
0.5
-50
0
50
100
150
0.01
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
110
100
D
I
= 2.0 A
Pulsed
GS
V
= 2.5 V
Pulsed
100
90
80
70
60
50
40
30
90
80
70
60
50
40
30
20
4.0 V
4.5 V
D
I
= 2.0 A
-50
0
50
100
150
0
2
4
6
8
10
12
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet D15938EJ1V0DS
2SK3577
DRAIN TO SOURCE ON-STATE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RESISTANCE vs. DRAIN CURRENT
GS
V = 4.0 V
110
100
90
110
100
90
GS
V
= 2.5V
Pulsed
Pulsed
A
T
= 125°C
75°C
25°C
80
80
A
T
= 125°C
70
70
75°C
25°C
60
60
−25°C
50
50
−25°C
40
40
30
30
0.01
0.1
1
10
100
0.01
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
110
100
90
GS
GS
V
= 4.5 V
V
= 0 V
Pulsed
f = 1 MHz
iss
C
80
A
T
= 125°C
75°C
70
100
60
oss
C
25°C
50
rss
C
−25°C
40
30
10
0.01
0.1
1
10
100
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
10
100
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
Pulsed
tr
10
1
tf
GS
V
= 0 V
td(off)
td(on)
0.1
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
1.4
ID - Drain Current - A
VSD - Source to Drain Voltage - V
5
Data Sheet D15938EJ1V0DS
2SK3577
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
6
5
4
3
2
1
0
D
I = 3.5 A
DD
V
= 24 V
15 V
6 V
0
1
2
3
4
QG - Gate Charge - nC
6
Data Sheet D15938EJ1V0DS
2SK3577
[MEMO]
7
Data Sheet D15938EJ1V0DS
2SK3577
•
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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•
•
•
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M8E 00. 4
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