2SK3480-Z [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3480-Z |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3480
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
2SK3480
The 2SK3480 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE
TO-220AB
TO-262
2SK3480-S
FEATURES
2SK3480-ZJ
TO-263
• Super low on-state resistance:
RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A)
• Low Ciss: Ciss = 3600 pF TYP.
• Built-in gate protection diode
2SK3480-Z
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
100
±20
V
V
A
A
±50
±100
84
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
(TO-262)
PT2
1.5
Tch
150
°C
°C
A
Storage Temperature
Tstg
–55 to +150
34
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
116
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
(TO-263, TO-220SMD)
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
Rth(ch-A)
1.48
83.3
°C/W
°C/W
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
Document No.
Date Published December 2001 NS CP(K)
Printed in Japan
D15078EJ1V0DS00 (1st edition)
©
2SK3480
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 100 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
2.5
µA
µA
V
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 25 A
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 25 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
17
2.0
34
Forward Transfer Admittance
Drain to Source On-state Resistance
S
25
31
36
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
27
Input Capacitance
3600
360
190
15
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 50 V, ID = 25 A
VGS = 10 V
11
Turn-off Delay Time
Fall Time
RG = 0 Ω
68
6.0
74
Total Gate Charge
QG
VDD = 80 V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
10
ID = 50 A
20
IF = 50 A, VGS = 0 V
IF = 50 A, VGS = 0 V
di/dt = 100 A/µs
1.0
70
ns
nC
Qrr
180
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
V
DD
V
VDS
90%
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D15078EJ1V0DS
2SK3480
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
120
100
80
60
60
40
40
20
20
0
20
40 60
80 100 120 140 160
0
20 40
60
80 100 120 140 160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
I
D(pulse)
I
D(DC)
1
T
C
= 25˚C
Single Pulse
0.1
0.1
1
10
100
1000
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
Rth(ch-A) = 83.3˚C/W
10
1
Rth(ch-C) = 1.48˚C/W
0.1
0.01
T
C
= 25˚C
Single Pulse
µ
10
1 m
10 m
100 m
1
10
100 1000
100
µ
PW - Pulse Width - s
3
Data Sheet D15078EJ1V0DS
2SK3480
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
Pulsed
1000
100
100
80
V
GS =10 V
4.5 V
60
40
T
A
= −40˚C
25˚C
10
1
75˚C
150˚C
20
0
V
DS = 10 V
Pulsed
0.1
1
2
3
4
5
0
1
2
3
4
5
V
GS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
50
100
10
V
DS = 10 V
Pulsed
Pulsed
40
30
20
10
0
T
A
= 150˚C
75˚C
I
D
= 50 A
25 A
25˚C
−40˚C
1
0.1
0.01
5
10
15
20
0.01
0.1
1
10
100
VGS - Gate to Source Voltage - V
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
0
100
80
60
40
20
0
V
DS = 10 V
Pulsed
I
D = 1 mA
V
GS = 4.5 V
10 V
0.1
1
10
100
−50
0
50
100
150
I
D
- Drain Current - A
Tch - Channel Temperature - ˚C
4
Data Sheet D15078EJ1V0DS
2SK3480
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
70
60
1000
100
10
Pulsed
Pulsed
50
40
30
20
V
GS = 10 V
V
GS = 4.5 V
0 V
10 V
1
10
0
I
D
= 25 A
150
0.1
0
1.5
1.0
- Source to Drain Voltage - V
100
ch - Channel Temperature - ˚C
0.5
0
50
−50
V
SD
T
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
10000
1000
C
iss
t
d(off)
100
10
1
C
oss
t
d(on)
C
rss
100
10
t
r
t
f
V
DD = 50 V
GS = 10 V
V
GS = 0 V
V
f = 1 MHz
R
G
= 0 Ω
0.1
1
10
100
0.01
0.1
1
10
100
I
D
- Drain Current - A
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
1000
100
di/dt = 100 A/ns
GS = 0 V
V
80
60
40
20
0
8
V
DD = 80 V
50 V
V
GS
20 V
6
4
10
1
2
V
DS
I
60
- Gate Charge - nC
D
= 83 A
0
0
20
40
80
0.1
1
10
100
Q
G
I
F
- Drain Current - A
5
Data Sheet D15078EJ1V0DS
2SK3480
SINGLE AVALANCHE ENERGY
DERATING FACTOR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
160
140
120
100
80
1000
100
V
R
V
I
DD = 50 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 34 A
G
I
AS = 34A
60
10
1
40
V
= 50V
VDD = 20→0 V
RGS
= 25 Ω
Starting Tch = 25˚C
20
G
0
25
50
75
100
125
150
0.01 0.1
1
10
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - mH
6
Data Sheet D15078EJ1V0DS
2SK3480
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
1.3±0.2
φ
10 TYP.
3.6±0.2
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
1.Gate
2.Drain
3.Source
2.54 TYP.
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD(MP-25Z)Note
4.8 MAX.
4.8 MAX.
10 TYP.
10 TYP.
4
1.3±0.2
1.3±0.2
4
1
2
3
1
2
3
1.4±0.2
1.4±0.2
0.7±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
0.5±0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
1.Gate
1.Gate
2.Drain
3.Source
2.Drain
3.Source
4.Fin (Drain)
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
7
Data Sheet D15078EJ1V0DS
2SK3480
•
The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest p ublications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
2SK3480-ZJ-AZ
Power Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN
NEC
2SK3480-ZJ-AZ
50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN
RENESAS
2SK3481-AZ
Power Field-Effect Transistor, 30A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
NEC
©2020 ICPDF网 联系我们和版权申明