2SK3481 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SK3481 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SK3481
TO-263
Unit: mm
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Features
Super low on-state resistance:
RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 15A)
RDS(on)2 = 58 m MAX. (VGS = 4.5 V, ID = 15 A)
Low Ciss: Ciss = 2300 pF TYP.
+0.1
-0.1
0.1max
1.27
+0.1
0.81
-0.1
Built-in gate protection diode
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
100
20
Gate to source voltage
V
A
30
Drain current
Idp *
A
60
56
Power dissipation
TC=25
TA=25
PD
W
1.5
150
Channel temperature
Storage temperature
Tch
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
10
Unit
A
VDS=100V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=15A
VGS=10V,ID=15A
VGS=4.5V,ID=15A
10
A
1.5
9
2.0
18
2.5
V
Forward transfer admittance
S
RDS(on)1
RDS(on)2
Ciss
40
50
58
m
Drain to source on-state resistance
44
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
2300
230
120
13
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Coss
Crss
ton
tr
10
ID=15A,VGS(on)=10V,RG=0 ,VDD=50V
Turn-off delay time
Fall time
toff
53
tf
5.0
48
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
ID =30A, VDD =80V, VGS = 10 V
QGS
QGD
7.0
12
1
www.kexin.com.cn
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