2SK2090-A [NEC]
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| 型号： | 2SK2090-A |
| 厂家： | 
NEC |
| 描述： | 暂无描述 晶体 开关 小信号场效应晶体管 光电二极管 输入元件 |
| 文件： | 总6页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2090
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The2SK2090isanN-channelverticalMOSFET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuatorfor low-currentportablesystemssuchasheadphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
2.1 ±0.1
1.25 ±0.1
G
S
FEATURES
D
•
•
Gate can be driven by 2.5 V
Because of its high input impedance, there’s no need to
consider drive current
Marking
Marking: G22
EQUIVALENT CURCUIT
Drain (D)
Internal
diode
Gate (G)
Gate
protection
diode
PIN
CONNECTIONS
S: Source
D: Drain
G: Gate
Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
TEST CONDITIONS
RATING
UNIT
V
VGS = 0
VDS = 0
50
±7.0
V
±100
mA
mA
mW
˚C
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
PW ≤ 10 ms, duty cycle ≤ 50 %
±200
150
Tch
150
Tstg
–55 to +150
˚C
Document No. D11228EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
©
2SK2090
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Drain Cut-Off Current
Gate Leakage Current
Gate Cut-Off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
SYMBOL
TEST CONDITIONS
VDS = 50 V, VGS = 0
MIN.
TYP.
1.0
MAX.
1.0
UNIT
µA
µA
V
IDSS
IGSS
VGS = ±7.0 V, VDS = 0
±5.0
1.5
VGS(off)
|yfs|
VDS = 3.0 V, ID = 1.0 µA
VDS = 3 V, ID = 10 mA
0.7
20
mS
Ω
RDS(on)1
RDS(on)2
Ciss
VGS = 2.5 V, ID = 10 mA
VGS = 4.0 V, ID = 10 mA
VDS = 3 V, VGS = 0, f = 1.0 MHz
20
15
6
40
20
Ω
pF
pF
pF
ns
ns
ns
ns
Output Capacitance
Coss
8
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Crss
1.2
9
td(on)
tr
VDD = 3 V, ID = 20 mA, VGS(on) = 3 V,
RG = 10 Ω, RL = 120 Ω
50
20
40
Turn-OFF Delay Time
Fall Time
td(off)
tf
2
2SK2090
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
60
40
20
80
60
40
20
3.0 V
4.0 V
3.5 V
2.5 V
V
GS = 2.0 V
0
30
60
90
120
150
0
1
2
3
4
5
T
A
- Ambient Temperature - ˚C
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TRANSFER CHARACTERISTICS
100
10
1
100
50
V
DS = 3 V
VDS = 3 V
T
A
= –25˚ C
25˚ C
T
A
= 75˚C
25˚C
125 ˚C
–25˚C
0.1
20
10
0.01
0.001
0
1
2
3
1
2
5
10
20
50
100
V
GS - Gate to Source Voltage - V
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
100
50
100
50
VGS = 2.5 V
VGS = 4 V
T
A
= 75 ˚C
25 ˚C
T
A
= 75 ˚C
25 ˚C
20
10
5
20
10
5
–25 ˚C
–25 ˚C
2
1
2
1
1
2
5
10
20
50
100
1
2
5
10
20
50
100
I
D
- Drain Current - mA
I
D
- Drain Current - mA
3
2SK2090
DRAIN TO SOURCE ON-STAGE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
30
20
10
10
5
ID = 10 mA
C
iss
I
D
= 1 mA
10 mA
50 mA
Coss
2
1
0.5
Crss
0.2
0.1
V
GS = 0
f = 1 MHz
1
2
3
4
5
6
7
1
2
5
10
20
50
100
V
GS - Gate to Source Voltage - V
V
DS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
100
100
50
t
r
t
f
20
10
5
t
d(off)
10
t
d(on)
V
V
R
DD = 3 V
GS(on) = 3 V
2
1
G
= 10
Ω
1
0
0.2
0.4
0.6
0.8
1.0
20
50
100 200
500 1000
10
I
D
- Drain Current - mA
VSD - Source to Drain Voltage - V
4
2SK2090
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
2SK2090
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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