2SK2094 [KEXIN]
Silicon N-Channel MOSFET; 硅N沟道MOSFET
| 型号： | 2SK2094 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon N-Channel MOSFET |
| 文件： | 总1页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
Silicon N-Channel MOSFET
2SK2094
Features
TO-252
Unit: mm
Low on-resistance
Fast switching speed
Low-voltage drive
+0.15
-0.15
+0.1
2.30
-0.1
6.50
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Easily designed drive circuits
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
60
Gate to source voltage
V
20
2
A
Drain current
Idp
8
20
A
Power dissipation
PD
W
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
IGSS
VGS(th) VDS=10V,ID=1mA
Testconditons
Min
Typ
Max
100
100
2.5
Unit
A
VDS=60V,VGS=0
Gate leakage current
Gate threshold voltage
Forward transfer admittance
nA
V
VGS= 20V,VDS=0
1.0
1.0
VDS=10V,ID=1A
VGS=10V,ID=1A
VGS=4V,ID=1A
S
Yfs
0.3
0.4
400
150
50
0.35
0.5
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
10
20
ID=1A,VGS(on)=10V,RL=30 ,RG=10
Turn-off delay time
Fall time
td(off)
tf
100
40
1
www.kexin.com.cn
相关型号：
2SK2094F5TL
Power Field-Effect Transistor, 2A I(D), 60V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
ROHM
2SK2094TL
Power Field-Effect Transistor, 2A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN
ROHM
2SK2095C7
Power Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明