2SK2053 [NEC]
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING; N沟道MOS FET，用于高速开关
| 型号： | 2SK2053 |
| 厂家： | 
NEC |
| 描述： | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The2SK2053isanN-channelverticalMOSFET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuatorfor low-currentportablesystemssuchasheadphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
FEATURES
•
New package intermediate between small signal and
power types
S
D
G
0.85
±0.1
•
•
Gate can be driven by 1.5 V
0.5 ±0.1
0.5 ±0.1
0.4 ±0.05
Marking: NA1
2.1
Low ON resistance
4.2
RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A
RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A
EQUIVALENT CURCUIT
Drain (D)
PIN
CONNECTIONS
S: Source
D: Drain
Gate (G)
Internal
diode
G: Gate
Gate
protection
diode
Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
TEST CONDITIONS
RATING
UNIT
V
VGS = 0
VDS = 0
16
±7.0
±5.0
±10.0
2.0
V
A
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
PW ≤ 10 ms, duty cycle ≤ 50 %
A
2
7.5 cm × 0.7 mm ceramic substrate used
W
˚C
˚C
˚C
Tch
150
Topt
–20 to +60
Tstg
–55 to +150
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996
©
2SK2053
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Drain Cut-Off Current
Gate Leakage Current
Gate Cut-Off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
SYMBOL
TEST CONDITIONS
VDS = 16 V, VGS = 0
MIN.
TYP.
0.8
MAX.
1.0
UNIT
µA
µA
V
IDSS
IGSS
VGS = ±7.0 V, VDS = 0
VDS = 3 V, ID = 1 mA
±3.0
1.1
VGS(off)
|yfs|
0.5
4
VDS = 3 V, ID = 2.5 A
S
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
VGS = 1.5 V, ID = 0.5 A
VGS = 2.5 V, ID = 2.5 A
VGS = 4.0 V, ID = 2.5 A
VDS = 3 V, VGS = 0, f = 1.0 MHz
0.19
0.08
0.06
730
640
230
85
0.40
0.15
0.12
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Crss
td(on)
VDD = 3 V, ID = 2.5 A, VGS(on) = 3 V,
RG = 10 Ω, RL = 1.2 Ω
Rise Time
tr
450
280
310
Turn-OFF Delay Time
Fall Time
td(off)
tf
2
2SK2053
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
FORWARD BIAS SAFE OPERATING AREA
10
5
80
60
40
20
2
1
0.5
0.2
0.1
Single
pulse
0
30
60
90
120
150
1.0
1
1
2
5
10
20
50
100
T
A
- Ambient Temperature - ˚C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
5
4
3
2
1
10
1
V
DS = 3 V
TA = 75 ˚C
0.1
25 ˚C
–25˚C
0.01
0.001
0
0.2
0.4
0.6
0.8
0
0.5
1
1.5
2
2.5
V
DS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS = 1.5 V
VDS = 3 V
3
1
TA = –25 ˚C
25 ˚C
75 ˚C
0.3
0.1
T
A
= 75 ˚C
25 ˚C
0.03
0.01
–25 ˚C
0.001 0.003
0.01 0.03
0.1
0.3
0.01 0.03
0.1
0.3
1
3
10
I
D
- Drain Current - A
I
D
- Drain Current - A
3
2SK2053
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS = 2.5 V
VGS = 4.0 V
TA = 75 ˚C
25 ˚C
TA = 75 ˚C
25 ˚C
–25 ˚C
–25 ˚C
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.5
0.4
0.3
0.2
0.1
10
1
ID = 1 A, 2.5 A
5 A
0.1
0.01
0.001
0
2
4
6
0.2
0.4
0.6
0.8
1.0
1.2
VGS - Gate to Source Voltage - V
VSD - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1 000
500
1 000
500
Ciss
tr
tf
Coss
td(off)
200
100
50
200
100
Crss
td(on)
50
20
10
20
10
VDD = 3 V
VGS(on) = 3 V
VGS = 0
f = 1 MHz
1
2
5
10
20
50
100
0.1
0.2
0.5
1
2
5
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
4
2SK2053
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
2SK2053
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
相关型号：
2SK2053-AZ
Power Field-Effect Transistor, 5A I(D), 16V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NEC
2SK2054-AZ
Power Field-Effect Transistor, 3A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NEC
2SK2056
TRANSISTOR 4 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明